JP6114487B2 - メモリ素子およびクロスポイントスイッチと不揮発性ナノチューブブロックとを使用したそのアレイ - Google Patents
メモリ素子およびクロスポイントスイッチと不揮発性ナノチューブブロックとを使用したそのアレイ Download PDFInfo
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- JP6114487B2 JP6114487B2 JP2009523984A JP2009523984A JP6114487B2 JP 6114487 B2 JP6114487 B2 JP 6114487B2 JP 2009523984 A JP2009523984 A JP 2009523984A JP 2009523984 A JP2009523984 A JP 2009523984A JP 6114487 B2 JP6114487 B2 JP 6114487B2
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- 229910052782 aluminium Inorganic materials 0.000 claims description 20
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- -1 polypropylene carbonate Polymers 0.000 claims description 15
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims description 14
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 13
- 239000011810 insulating material Substances 0.000 claims description 13
- 229910004541 SiN Inorganic materials 0.000 claims description 12
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- 229910008484 TiSi Inorganic materials 0.000 claims description 11
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- 229910052737 gold Inorganic materials 0.000 claims description 11
- 229910052738 indium Inorganic materials 0.000 claims description 11
- 229910052741 iridium Inorganic materials 0.000 claims description 11
- 229910052745 lead Inorganic materials 0.000 claims description 11
- 229910052750 molybdenum Inorganic materials 0.000 claims description 11
- 229910052759 nickel Inorganic materials 0.000 claims description 11
- 229910052763 palladium Inorganic materials 0.000 claims description 11
- 229910052709 silver Inorganic materials 0.000 claims description 11
- 229910001258 titanium gold Inorganic materials 0.000 claims description 11
- 229910052721 tungsten Inorganic materials 0.000 claims description 11
- 229910052697 platinum Inorganic materials 0.000 claims description 10
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- 229920000379 polypropylene carbonate Polymers 0.000 claims description 8
- 229910052715 tantalum Inorganic materials 0.000 claims description 8
- 239000002059 nanofabric Substances 0.000 claims description 7
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 6
- 239000002041 carbon nanotube Substances 0.000 claims description 5
- 229910021393 carbon nanotube Inorganic materials 0.000 claims description 5
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- 125000006850 spacer group Chemical group 0.000 description 11
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 10
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- 229910052710 silicon Inorganic materials 0.000 description 10
- 239000010703 silicon Substances 0.000 description 10
- 230000008569 process Effects 0.000 description 9
- 229910019899 RuO Inorganic materials 0.000 description 8
- 229910004166 TaN Inorganic materials 0.000 description 8
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- 150000004767 nitrides Chemical class 0.000 description 7
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- 229910001092 metal group alloy Inorganic materials 0.000 description 5
- 150000002739 metals Chemical class 0.000 description 5
- 229910021332 silicide Inorganic materials 0.000 description 5
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 5
- 239000002238 carbon nanotube film Substances 0.000 description 4
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- 238000007740 vapor deposition Methods 0.000 description 3
- 238000000231 atomic layer deposition Methods 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 230000002457 bidirectional effect Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- JHIVVAPYMSGYDF-UHFFFAOYSA-N cyclohexanone Chemical compound O=C1CCCCC1 JHIVVAPYMSGYDF-UHFFFAOYSA-N 0.000 description 2
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- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 229910052707 ruthenium Inorganic materials 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 229930091051 Arenine Natural products 0.000 description 1
- 102100029203 F-box only protein 8 Human genes 0.000 description 1
- 101100334493 Homo sapiens FBXO8 gene Proteins 0.000 description 1
- 229910001128 Sn alloy Inorganic materials 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
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- 230000004888 barrier function Effects 0.000 description 1
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- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
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- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
-
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- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
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- G11C13/0064—Verifying circuits or methods
-
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- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
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- G11C13/02—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using elements whose operation depends upon chemical change
- G11C13/025—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using elements whose operation depends upon chemical change using fullerenes, e.g. C60, or nanotubes, e.g. carbon or silicon nanotubes
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- G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
- G11C17/14—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM
- G11C17/16—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM using electrically-fusible links
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- G—PHYSICS
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- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/70—Masking faults in memories by using spares or by reconfiguring
- G11C29/86—Masking faults in memories by using spares or by reconfiguring in serial access memories, e.g. shift registers, CCDs, bubble memories
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
- H01L27/101—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including resistors or capacitors only
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
- H01L29/0665—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body the shape of the body defining a nanostructure
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
- H01L29/0665—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body the shape of the body defining a nanostructure
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- H01L29/0673—Nanowires or nanotubes oriented parallel to a substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
- H01L29/0665—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body the shape of the body defining a nanostructure
- H01L29/0669—Nanowires or nanotubes
- H01L29/0676—Nanowires or nanotubes oriented perpendicular or at an angle to a substrate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/20—Organic diodes
- H10K10/29—Diodes comprising organic-inorganic heterojunctions
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0021—Auxiliary circuits
- G11C13/0069—Writing or programming circuits or methods
- G11C2013/0076—Write operation performed depending on read result
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
- G11C2213/10—Resistive cells; Technology aspects
- G11C2213/19—Memory cell comprising at least a nanowire and only two terminals
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
- G11C2213/70—Resistive array aspects
- G11C2213/71—Three dimensional array
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
- G11C2213/70—Resistive array aspects
- G11C2213/72—Array wherein the access device being a diode
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
- H01L27/102—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including bipolar components
- H01L27/1021—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including bipolar components including diodes only
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/20—Carbon compounds, e.g. carbon nanotubes or fullerenes
- H10K85/221—Carbon nanotubes
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S977/00—Nanotechnology
- Y10S977/70—Nanostructure
- Y10S977/762—Nanowire or quantum wire, i.e. axially elongated structure having two dimensions of 100 nm or less
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- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
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- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Crystallography & Structural Chemistry (AREA)
- Ceramic Engineering (AREA)
- Materials Engineering (AREA)
- Mathematical Physics (AREA)
- Theoretical Computer Science (AREA)
- Inorganic Chemistry (AREA)
- Semiconductor Memories (AREA)
- Semiconductor Integrated Circuits (AREA)
- Design And Manufacture Of Integrated Circuits (AREA)
Description
2007年3月6日に出願された「Memory Elements and Cross Point Switches and Arrays of Same Using Nonvolatile Nanotube Blocks」と題する米国仮特許出願第60/918,388号明細書
2006年10月27日に出願された「Nonvolatile Nanotube Blocks」と題する米国仮特許出願第60/855,109号明細書
2006年8月28日に出願された「Nonvolatile Nanotube Diode」と題する米国仮特許出願第60/840,586号明細書
2006年8月8日に出願された「Nonvolatile Nanotube Diode」と題する米国仮特許出願第60/836,437号明細書
2006年8月8日に出願された「Scalable Nonvolatile Nanotube Switches as Electronic Fuse Replacement Elements」と題する米国仮特許出願第60/836,343号明細書
2005年11月15日に出願された「Two−Terminal Nanotube Devices And Systems And Methods Of Making Same」と題する米国特許出願第11/280,786号明細書
2005年11月15日に出願された「Memory Arrays Using Nanotube Articles With Reprogrammable Resistance」と題する米国特許出願第11/274,967号明細書
2005年11月15日に出願された「Non− Volatile Shadow Latch Using A Nanotube Switch」と題する米国特許出願第11/280,599号明細書
「Nonvolatile Resistive Memories Having Scalable Two−Terminal Nanotube Switches」と題する米国特許出願第(未定)号明細書
「Latch Circuits and Operation Circuits Having Scalable Nonvolatile Nanotube Switches as Electronic Fuse Replacement Elements」と題する米国特許出願第(未定)号明細書
「Nonvolatile Nanotube Diodes and Nonvolatile Nanotube Blocks and Systems Using Same and Methods of Making Same」と題する米国特許出願第(未定)号明細書
「Nonvolatile Nanotube Diodes and Nonvolatile Nanotube Blocks and Systems Using Same and Methods of Making Same」と題する米国特許出願第(未定)号明細書
「Nonvolatile Nanotube Diodes and Nonvolatile Nanotube Blocks and Systems Using Same and Methods of Making Same」と題する米国特許出願第(未定)号明細書
「Nonvolatile Nanotube Diodes and Nonvolatile Nanotube Blocks and Systems Using Same and Methods of Making Same」と題する米国特許出願第(未定)号明細書
「Nonvolatile Nanotube Diodes and Nonvolatile Nanotube Blocks and Systems Using Same and Methods of Making Same」と題する米国特許出願第(未定)号明細書
「Nonvolatile Nanotube Diodes and Nonvolatile Nanotube Blocks and Systems Using Same and Methods of Making Same」と題する米国特許出願第(未定)号明細書
[組み入れられた特許文献]
Claims (21)
- ナノチューブスイッチであって、
(a)複数のカーボンナノチューブのみからなるナノファブリックで形成され、上面、下面、および複数の側面を有するナノチューブ素子と、
(b)前記ナノチューブ素子と接触する第1および第2の導電端子であって、前記第1の導電端子は前記ナノチューブ素子の上面全体に配置されてこれを実質的に覆い、前記第2の導電端子は前記ナノチューブ素子の前記下面の少なくとも一部分と接触する、第1および第2の導電端子と、
(c)前記第1および第2の導電端子と電気的に連通してこれに電気的刺激を印加することができる制御回路と、を備え、
前記ナノチューブ素子は前記制御回路によって前記第1および第2の導電端子に印加される、対応する複数の電気的刺激に応じて複数の抵抗状態を切り替えることができ、
前記複数の抵抗状態のそれぞれ異なる抵抗状態のために、前記ナノチューブ素子は前記第1および第2の導電端子間に対応する、異なる抵抗の電気経路を提供することを特徴とするナノチューブスイッチ。 - 前記第1の導電端子は前記複数の側面の少なくとも1つの側面にさらに配置されてこれを実質的に覆う、請求項1に記載のナノチューブスイッチ。
- 前記第1の導電端子は前記複数の側面にさらに配置されてこれを実質的に覆う、請求項1に記載のナノチューブスイッチ。
- 前記ナノチューブ素子の前記下面と接触する絶縁体層をさらに備え、前記絶縁体層および前記第2の導電端子はともに前記ナノチューブ素子の前記下面全体を実質的に覆う、請求項3に記載のナノチューブスイッチ。
- 前記ナノチューブ素子の前記下面と前記ナノチューブ素子の前記側面の1つとに接触する絶縁体層をさらに備える、請求項1に記載のナノチューブスイッチ。
- 前記絶縁体層はSiO2、SiN、Al2O3の1つを備える、請求項5に記載のナノチューブスイッチ。
- 少なくとも前記第1の導電端子を覆う不動態化層をさらに備え、前記不動態化層は前記第1および第2の導電端子と前記ナノチューブ素子とを環境に対して実質的に密封する、請求項1に記載のナノチューブスイッチ。
- 前記不動態化層はSiO2、SiN、Al2O3、ポリイミド、リンケイ酸ガラス、ポリフッ化ビニリデン、ポリプロピレンカーボネート、およびポリエチレンカーボネートの1つを備える、請求項7に記載のナノチューブスイッチ。
- 前記第2の導電端子は前記ナノチューブ素子の前記下面全体に実質的に接触する、請求項1に記載のナノチューブスイッチ。
- 前記第1および第2の導電端子は、各々、Ru、Ti、Cr、Al、Al(Cu)、Au、Pd、Pt、Ni、Ta、W、Cu、Mo、Ag、In、Ir、Pb、Sn、TiAu、TiCu、TiPd、PbIn、TiW、RuN、RuO、TiN、TaN、CoSix、およびTiSixからなる群から独立に選択される導電材料を備える、請求項1に記載のナノチューブスイッチ。
- ナノチューブスイッチであって、
(a)複数のカーボンナノチューブのみからなるナノファブリックで形成され、上面と下面を有するナノチューブ素子と、
(b)前記ナノチューブ素子と接触して互いに対して隔離した第1および第2の導電端子と、
(c)前記ナノチューブ素子の前記上面と接触する第1の絶縁体層と、
(d)前記ナノチューブ素子の前記下面と接触する第2の絶縁体層であって、前記第1および第2の導電端子と前記第1および第2の絶縁体層は一緒に前記ナノチューブ素子を実質的に包囲する、第2の絶縁体層と、
(e)前記第1および第2の導電端子と電気的に連通してこれに電気的刺激を印加することができる制御回路と、を備え、
前記ナノチューブ素子は前記制御回路によって前記第1および第2の導電端子に印加される、対応する複数の電気的刺激に応じて複数の抵抗状態を切り替えることができ、
前記複数の抵抗状態のそれぞれ異なる抵抗状態のために、前記ナノチューブ素子は前記第1および第2の導電端子間に対応する、異なる抵抗の電気経路を提供することを特徴とするナノチューブスイッチ。 - 前記第1の絶縁体層の少なくとも一部分はギャップによって前記ナノチューブ素子の前記上面から分離される、請求項11に記載のナノチューブスイッチ。
- 前記第2の絶縁体層の少なくとも一部分はギャップによって前記ナノチューブ素子の前記下面から分離される、請求項12に記載のナノチューブスイッチ。
- 前記第1および第2の導電端子は前記ナノチューブ素子の前記下面に接触し、前記第1の絶縁体層は前記ナノチューブ素子の上面全体に接触する、請求項11に記載のナノチューブスイッチ。
- 前記第1および第2の導電端子は前記ナノチューブ素子の上面に接触する、請求項11に記載のナノチューブスイッチ。
- 前記第1の導電端子は前記ナノチューブ素子の前記下面に接触し、前記第2の導電端子は前記ナノチューブ素子の前記上面に接触する、請求項11に記載のナノチューブスイッチ。
- 前記第1および第2の絶縁体層は、各々、SiO2、SiN、およびAl2O3からなる群から独立に選択される絶縁材料を備える、請求項11に記載のナノチューブスイッチ。
- 前記第1および第2の導電端子は、各々、Ru、Ti、Cr、Al、Al(Cu)、Au、Pd、Pt、Ni、Ta、W、Cu、Mo、Ag、In、Ir、Pb、Sn、TiAu、TiCu、TiPd、PbIn、TiW、RuN、RuO、TiN、TaN、CoSix、およびTiSixからなる群から独立に選択される導電材料を備える、請求項11に記載のナノチューブスイッチ。
- ナノチューブスイッチであって、
(a)複数のカーボンナノチューブのみからなるナノファブリックで形成され、上面と下面を有するナノチューブ素子と、
(b)前記ナノチューブ素子と接触して互いに対して隔離した第1および第2の導電端子と、
(c)前記ナノチューブ素子の前記上面の上に配置され前記上面に対して隔離した第1の絶縁体層と、
(d)前記ナノチューブ素子の前記下面の下に配置されてこの下面に対して隔離した第2の絶縁体層であって、前記第1および第2の導電端子と前記第1および第2の絶縁体層は一緒に前記ナノチューブ素子を実質的に包囲する、第2の絶縁体層と、
(e)前記第1および第2の導電端子と電気的に連通してこれに電気的刺激を印加することができる制御回路と、を備え、
前記ナノチューブ素子は前記第1および第2の導電端子に前記制御回路によって印加される、対応する複数の電気的刺激に応じて複数の抵抗状態に切り替わることができ、
前記複数の抵抗状態のそれぞれ異なる抵抗状態のために、前記ナノチューブ素子は前記第1および第2の導電端子間に対応する、異なる抵抗の電気経路を提供することを特徴とするナノチューブスイッチ。 - 前記第1および第2の絶縁体層は、各々、SiO2、SiN、およびAl2O3からなる群から独立に選択される絶縁材料を備える、請求項19に記載のナノチューブスイッチ。
- 前記第1および第2の導電端子は、各々、Ru、Ti、Cr、Al、Al(Cu)、Au、Pd、Pt、Ni、Ta、W、Cu、Mo、Ag、In、Ir、Pb、Sn、TiAu、TiCu、TiPd、PbIn、TiW、RuN、RuO、TiN、TaN、CoSix、およびTiSixからなる群から独立に選択される導電材料を備える、請求項19に記載のナノチューブスイッチ。
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