JP2004282050A5 - - Google Patents
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- Publication number
- JP2004282050A5 JP2004282050A5 JP2004048421A JP2004048421A JP2004282050A5 JP 2004282050 A5 JP2004282050 A5 JP 2004282050A5 JP 2004048421 A JP2004048421 A JP 2004048421A JP 2004048421 A JP2004048421 A JP 2004048421A JP 2004282050 A5 JP2004282050 A5 JP 2004282050A5
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- film
- integrated circuit
- circuit device
- silicon nitride
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000010408 film Substances 0.000 claims 82
- 239000010409 thin film Substances 0.000 claims 54
- 229910052581 Si3N4 Inorganic materials 0.000 claims 26
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims 26
- 239000004065 semiconductor Substances 0.000 claims 23
- 239000000758 substrate Substances 0.000 claims 22
- 229910052751 metal Inorganic materials 0.000 claims 20
- 239000002184 metal Substances 0.000 claims 20
- 229910044991 metal oxide Inorganic materials 0.000 claims 15
- 150000004706 metal oxides Chemical class 0.000 claims 15
- 238000000034 method Methods 0.000 claims 15
- 239000000853 adhesive Substances 0.000 claims 14
- 230000001070 adhesive effect Effects 0.000 claims 14
- 238000004519 manufacturing process Methods 0.000 claims 14
- 230000015572 biosynthetic process Effects 0.000 claims 13
- 239000012535 impurity Substances 0.000 claims 8
- 229910052750 molybdenum Inorganic materials 0.000 claims 4
- 229910052719 titanium Inorganic materials 0.000 claims 4
- 239000010936 titanium Substances 0.000 claims 4
- 229910052721 tungsten Inorganic materials 0.000 claims 4
- 229910052715 tantalum Inorganic materials 0.000 claims 3
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims 2
- 229910052779 Neodymium Inorganic materials 0.000 claims 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims 2
- 229910052782 aluminium Inorganic materials 0.000 claims 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims 2
- 239000003822 epoxy resin Substances 0.000 claims 2
- 229910052741 iridium Inorganic materials 0.000 claims 2
- 239000011733 molybdenum Substances 0.000 claims 2
- 229910052759 nickel Inorganic materials 0.000 claims 2
- 229910052762 osmium Inorganic materials 0.000 claims 2
- 229910052763 palladium Inorganic materials 0.000 claims 2
- 229920000647 polyepoxide Polymers 0.000 claims 2
- 229910052703 rhodium Inorganic materials 0.000 claims 2
- 229910052707 ruthenium Inorganic materials 0.000 claims 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims 2
- 239000010937 tungsten Substances 0.000 claims 2
- 229910052725 zinc Inorganic materials 0.000 claims 2
- 229910052726 zirconium Inorganic materials 0.000 claims 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 1
- 229910052802 copper Inorganic materials 0.000 claims 1
- 239000010949 copper Substances 0.000 claims 1
- 238000010438 heat treatment Methods 0.000 claims 1
- 230000001590 oxidative effect Effects 0.000 claims 1
- 229910052710 silicon Inorganic materials 0.000 claims 1
- 239000010703 silicon Substances 0.000 claims 1
- 238000004544 sputter deposition Methods 0.000 claims 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2004048421A JP4566578B2 (ja) | 2003-02-24 | 2004-02-24 | 薄膜集積回路の作製方法 |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2003046456 | 2003-02-24 | ||
| JP2004048421A JP4566578B2 (ja) | 2003-02-24 | 2004-02-24 | 薄膜集積回路の作製方法 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2006025256A Division JP4823705B2 (ja) | 2003-02-24 | 2006-02-02 | 薄膜集積回路の作製方法及びｉｃラベルの作製方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2004282050A JP2004282050A (ja) | 2004-10-07 |
| JP2004282050A5 true JP2004282050A5 (enExample) | 2007-03-22 |
| JP4566578B2 JP4566578B2 (ja) | 2010-10-20 |
Family
ID=33301691
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2004048421A Expired - Fee Related JP4566578B2 (ja) | 2003-02-24 | 2004-02-24 | 薄膜集積回路の作製方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4566578B2 (enExample) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8324018B2 (en) | 2005-01-28 | 2012-12-04 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, electronic device, and method of manufacturing semiconductor device |
| US8575618B2 (en) | 2005-02-03 | 2013-11-05 | Semiconductor Energy Laboratory Co., Ltd. | Electronic device, semiconductor device and manufacturing method thereof |
Families Citing this family (62)
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|---|---|---|---|---|
| EP1494167A1 (en) * | 2003-07-04 | 2005-01-05 | Koninklijke Philips Electronics N.V. | Flexible semiconductor device and identification label |
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| KR101219749B1 (ko) | 2004-10-22 | 2013-01-21 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체장치 |
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| JP5089037B2 (ja) * | 2004-12-03 | 2012-12-05 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| WO2006062143A1 (en) | 2004-12-07 | 2006-06-15 | Semiconductor Energy Laboratory Co., Ltd. | Memory device and semiconductor device |
| JP4954540B2 (ja) * | 2004-12-07 | 2012-06-20 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| WO2006068286A1 (en) | 2004-12-24 | 2006-06-29 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| JP4942998B2 (ja) * | 2004-12-24 | 2012-05-30 | 株式会社半導体エネルギー研究所 | 半導体装置及び半導体装置の作製方法 |
| WO2006078065A1 (en) | 2005-01-21 | 2006-07-27 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| US7579224B2 (en) * | 2005-01-21 | 2009-08-25 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing a thin film semiconductor device |
| CN101111938B (zh) | 2005-01-28 | 2010-08-11 | 株式会社半导体能源研究所 | 半导体器件和制造它的方法 |
| JP5100012B2 (ja) * | 2005-01-28 | 2012-12-19 | 株式会社半導体エネルギー研究所 | 半導体装置及びその作製方法 |
| TWI569441B (zh) | 2005-01-28 | 2017-02-01 | 半導體能源研究所股份有限公司 | 半導體裝置，電子裝置，和半導體裝置的製造方法 |
| JP4777203B2 (ja) * | 2005-01-28 | 2011-09-21 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| JP4817853B2 (ja) * | 2005-01-31 | 2011-11-16 | 株式会社半導体エネルギー研究所 | 半導体装置の作成方法 |
| US8232555B2 (en) | 2005-01-31 | 2012-07-31 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, and method for manufacturing thereof |
| WO2006085600A1 (en) * | 2005-02-10 | 2006-08-17 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| JP5046529B2 (ja) * | 2005-02-25 | 2012-10-10 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| US7566633B2 (en) * | 2005-02-25 | 2009-07-28 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
| EP1696368B1 (en) | 2005-02-28 | 2011-11-16 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and driving method thereof |
| JP4974541B2 (ja) * | 2005-03-08 | 2012-07-11 | 株式会社半導体エネルギー研究所 | 無線チップの作製方法 |
| US20060202269A1 (en) | 2005-03-08 | 2006-09-14 | Semiconductor Energy Laboratory Co., Ltd. | Wireless chip and electronic appliance having the same |
| US8010045B2 (en) | 2005-03-25 | 2011-08-30 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| JP5008323B2 (ja) * | 2005-03-28 | 2012-08-22 | 株式会社半導体エネルギー研究所 | メモリ装置 |
| US8030643B2 (en) * | 2005-03-28 | 2011-10-04 | Semiconductor Energy Laboratory Co., Ltd. | Memory device and manufacturing method the same |
| JP5052033B2 (ja) * | 2005-04-28 | 2012-10-17 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| KR100966301B1 (ko) * | 2005-05-11 | 2010-06-28 | 서울시립대학교 산학협력단 | 강유전체 메모리장치의 제조방법 |
| JP5089082B2 (ja) * | 2005-05-20 | 2012-12-05 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| JP2007005782A (ja) * | 2005-05-27 | 2007-01-11 | Semiconductor Energy Lab Co Ltd | 半導体装置及び半導体装置の作製方法 |
| JP5127161B2 (ja) * | 2005-05-30 | 2013-01-23 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| CN101228630B (zh) | 2005-05-30 | 2011-10-05 | 株式会社半导体能源研究所 | 半导体器件 |
| JP4704959B2 (ja) * | 2005-05-31 | 2011-06-22 | 株式会社半導体エネルギー研究所 | 商品の管理方法および危険物の管理方法 |
| KR101245539B1 (ko) * | 2005-05-31 | 2013-03-21 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
| US7456104B2 (en) | 2005-05-31 | 2008-11-25 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
| JP5057703B2 (ja) * | 2005-05-31 | 2012-10-24 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| JP5030470B2 (ja) * | 2005-05-31 | 2012-09-19 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| US7651932B2 (en) | 2005-05-31 | 2010-01-26 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing antenna and method for manufacturing semiconductor device |
| US7605056B2 (en) | 2005-05-31 | 2009-10-20 | Semiconductor Energy Laboratory Co., Ltd. | Method of manufacturing a semiconductor device including separation by physical force |
| KR101272097B1 (ko) | 2005-06-03 | 2013-06-07 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 집적회로 장치 및 그의 제조방법 |
| US7820495B2 (en) | 2005-06-30 | 2010-10-26 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
| US7727859B2 (en) | 2005-06-30 | 2010-06-01 | Semiconductor Energy Laboratory Co., Ltd | Semiconductor device and manufacturing method thereof |
| JP4908936B2 (ja) * | 2005-06-30 | 2012-04-04 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| US7510950B2 (en) | 2005-06-30 | 2009-03-31 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
| JP5127167B2 (ja) * | 2005-06-30 | 2013-01-23 | 株式会社半導体エネルギー研究所 | 半導体装置及びその作製方法 |
| US7719103B2 (en) | 2005-06-30 | 2010-05-18 | Semiconductor Energy Laboratory Co., Ltd | Semiconductor device |
| US7465596B2 (en) | 2005-06-30 | 2008-12-16 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing method of semiconductor device |
| JPWO2007004296A1 (ja) * | 2005-07-06 | 2009-01-22 | 富士通株式会社 | 誘電体多層膜を含んだ光学素子およびその製造方法 |
| CN101233531B (zh) | 2005-07-29 | 2012-05-30 | 株式会社半导体能源研究所 | 半导体装置的制造方法 |
| EP1920459A4 (en) | 2005-08-12 | 2012-07-25 | Semiconductor Energy Lab | METHOD OF MANUFACTURING A SEMICONDUCTOR ARRANGEMENT |
| JP5089033B2 (ja) * | 2005-11-04 | 2012-12-05 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| KR101319468B1 (ko) * | 2005-12-02 | 2013-10-30 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체장치의 제조방법 |
| JP5127183B2 (ja) | 2006-08-23 | 2013-01-23 | キヤノン株式会社 | アモルファス酸化物半導体膜を用いた薄膜トランジスタの製造方法 |
| US8047442B2 (en) * | 2007-12-03 | 2011-11-01 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| JP5407424B2 (ja) * | 2009-02-27 | 2014-02-05 | 大日本印刷株式会社 | 電子装置製造方法及び電子装置及び電子デバイス |
| KR101845480B1 (ko) | 2010-06-25 | 2018-04-04 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치의 제작 방법 |
| US9202822B2 (en) | 2010-12-17 | 2015-12-01 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
| BR112013018842B1 (pt) * | 2011-01-28 | 2021-07-27 | Société des Produits Nestlé S.A. | Aparelho de teste de deglutição |
| US11302717B2 (en) * | 2016-04-08 | 2022-04-12 | Semiconductor Energy Laboratory Co., Ltd. | Transistor and method for manufacturing the same |
| CN108906103B (zh) * | 2018-06-20 | 2021-06-29 | 中山大学 | 一种超薄纳米片状石墨相氮化碳的制备方法和应用 |
Family Cites Families (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61206304A (ja) * | 1985-03-11 | 1986-09-12 | Hitachi Ltd | トランジスタ集積回路 |
| JPH09270515A (ja) * | 1996-04-01 | 1997-10-14 | Matsushita Electric Ind Co Ltd | 半導体装置 |
| JP3809681B2 (ja) * | 1996-08-27 | 2006-08-16 | セイコーエプソン株式会社 | 剥離方法 |
| JPH11243209A (ja) * | 1998-02-25 | 1999-09-07 | Seiko Epson Corp | 薄膜デバイスの転写方法、薄膜デバイス、薄膜集積回路装置、アクティブマトリクス基板、液晶表示装置および電子機器 |
| JP3447619B2 (ja) * | 1999-06-25 | 2003-09-16 | 株式会社東芝 | アクティブマトリクス基板の製造方法、中間転写基板 |
| JP2001166301A (ja) * | 1999-12-06 | 2001-06-22 | Seiko Epson Corp | バックライト内蔵型液晶表示装置及びその製造方法 |
| JP3319455B2 (ja) * | 1999-12-15 | 2002-09-03 | 日本電気株式会社 | 半導体装置の製造方法 |
| JP4884592B2 (ja) * | 2000-03-15 | 2012-02-29 | 株式会社半導体エネルギー研究所 | 発光装置の作製方法及び表示装置の作製方法 |
| JP2002133385A (ja) * | 2000-10-20 | 2002-05-10 | Dainippon Printing Co Ltd | 非接触、接触両用型ｉｃモジュール及びｉｃカード |
| JP2002164512A (ja) * | 2000-11-28 | 2002-06-07 | Fujitsu Ltd | 半導体装置及びその製造方法 |
| JP2002230141A (ja) * | 2001-01-30 | 2002-08-16 | Optrom Inc | 商品管理方法とそのシステム |
| JP2002353235A (ja) * | 2001-05-23 | 2002-12-06 | Matsushita Electric Ind Co Ltd | アクティブマトリクス基板とそれを用いた表示装置およびその製造方法 |
| EP1455394B1 (en) * | 2001-07-24 | 2018-04-11 | Samsung Electronics Co., Ltd. | Transfer method |
| JP2003044808A (ja) * | 2001-07-30 | 2003-02-14 | Kyodo Printing Co Ltd | 表示付き非接触ｉｃカードの製造方法、および表示付き非接触ｉｃカード |
| JP5057619B2 (ja) * | 2001-08-01 | 2012-10-24 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
-
2004
- 2004-02-24 JP JP2004048421A patent/JP4566578B2/ja not_active Expired - Fee Related
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8324018B2 (en) | 2005-01-28 | 2012-12-04 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, electronic device, and method of manufacturing semiconductor device |
| US8575618B2 (en) | 2005-02-03 | 2013-11-05 | Semiconductor Energy Laboratory Co., Ltd. | Electronic device, semiconductor device and manufacturing method thereof |
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