JP5301108B2 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
- Publication number
- JP5301108B2 JP5301108B2 JP2007112336A JP2007112336A JP5301108B2 JP 5301108 B2 JP5301108 B2 JP 5301108B2 JP 2007112336 A JP2007112336 A JP 2007112336A JP 2007112336 A JP2007112336 A JP 2007112336A JP 5301108 B2 JP5301108 B2 JP 5301108B2
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- Prior art keywords
- semiconductor substrate
- semiconductor
- capacitor
- insulating film
- electrode
- Prior art date
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- 239000004065 semiconductor Substances 0.000 title claims description 172
- 239000000758 substrate Substances 0.000 claims description 89
- 239000003990 capacitor Substances 0.000 claims description 60
- 230000000149 penetrating effect Effects 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 52
- 238000000034 method Methods 0.000 description 25
- 238000004519 manufacturing process Methods 0.000 description 16
- 229910052751 metal Inorganic materials 0.000 description 13
- 239000002184 metal Substances 0.000 description 13
- 238000005530 etching Methods 0.000 description 8
- 230000008569 process Effects 0.000 description 8
- 229910052782 aluminium Inorganic materials 0.000 description 7
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 7
- 230000004888 barrier function Effects 0.000 description 6
- 239000010949 copper Substances 0.000 description 6
- 230000000694 effects Effects 0.000 description 6
- 239000011241 protective layer Substances 0.000 description 6
- 238000000227 grinding Methods 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- 229910052802 copper Inorganic materials 0.000 description 4
- 229910000679 solder Inorganic materials 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
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- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 2
- 230000009471 action Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 2
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- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 239000012467 final product Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
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- 238000007650 screen-printing Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- MAKDTFFYCIMFQP-UHFFFAOYSA-N titanium tungsten Chemical compound [Ti].[W] MAKDTFFYCIMFQP-UHFFFAOYSA-N 0.000 description 1
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/14—Integrated circuits
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/1901—Structure
- H01L2924/1904—Component type
- H01L2924/19041—Component type being a capacitor
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/1901—Structure
- H01L2924/1904—Component type
- H01L2924/19043—Component type being a resistor
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/30105—Capacitance
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/30107—Inductance
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/3011—Impedance
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/35—Mechanical effects
- H01L2924/351—Thermal stress
- H01L2924/3511—Warping
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/35—Mechanical effects
- H01L2924/351—Thermal stress
- H01L2924/3512—Cracking
Description
5 パッシベーション膜 6 接着層 7 支持体 8 開口部
9 容量電極 10 第2の絶縁膜 11 配線層 12 保護膜
13a,13b,13c 導電端子 15 半導体装置 16 容量
17 導電端子 20 容量電極 21 容量 30 ビアホール
31 バリアメタル層 32 容量 40 配線層 41 第3の絶縁膜
42 配線層 43 開口部 44 容量 DL ダイシングライン
Claims (4)
- 半導体基板と、
前記半導体基板の表面に形成された半導体集積回路と、
前記半導体集積回路と接続されたパッド電極と、
前記半導体基板の裏面に形成された容量電極と、
前記半導体基板の側面上及び前記容量電極上に形成された絶縁膜と、
前記容量電極と重畳して前記絶縁膜上に形成され、且つ前記パッド電極と接続された配線層とを備え、
前記容量電極,前記絶縁膜,前記配線層で容量が形成されており、
前記容量電極は、前記半導体基板の裏面上から前記半導体基板の側面上に延在し、
前記絶縁膜は、前記半導体基板の側面上の前記容量電極上に形成され、
前記配線層は、前記半導体基板の側面上の前記絶縁膜上に形成されていることを特徴とする半導体装置。 - 前記半導体基板は、前記半導体基板を貫通するビアホールを有し、
前記半導体基板の側面は、前記ビアホールの内壁面を含むことを特徴とする請求項1に記載の半導体装置。 - 前記半導体基板の裏面上に、前記パッド電極と前記配線層を介して電気的に接続された第1の導電端子と、前記容量電極と接触した第2の導電端子とを備えることを特徴とする請求項1又は2に記載の半導体装置。
- 前記半導体基板上に支持体が貼り合わされていることを特徴とする請求項1乃至請求項3のいずれかに記載の半導体装置。
Priority Applications (4)
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JP2007112336A JP5301108B2 (ja) | 2007-04-20 | 2007-04-20 | 半導体装置 |
TW097111232A TWI396275B (zh) | 2007-04-20 | 2008-03-28 | 半導體裝置 |
US12/103,857 US8410577B2 (en) | 2007-04-20 | 2008-04-16 | Semiconductor device |
CN2008100926279A CN101290934B (zh) | 2007-04-20 | 2008-04-16 | 半导体装置 |
Applications Claiming Priority (1)
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JP2007112336A JP5301108B2 (ja) | 2007-04-20 | 2007-04-20 | 半導体装置 |
Publications (2)
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JP2008270573A JP2008270573A (ja) | 2008-11-06 |
JP5301108B2 true JP5301108B2 (ja) | 2013-09-25 |
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Country Status (4)
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US (1) | US8410577B2 (ja) |
JP (1) | JP5301108B2 (ja) |
CN (1) | CN101290934B (ja) |
TW (1) | TWI396275B (ja) |
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TW200843086A (en) | 2008-11-01 |
US8410577B2 (en) | 2013-04-02 |
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TWI396275B (zh) | 2013-05-11 |
JP2008270573A (ja) | 2008-11-06 |
US20080258258A1 (en) | 2008-10-23 |
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