JP2006135305A5 - - Google Patents
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- Publication number
- JP2006135305A5 JP2006135305A5 JP2005282204A JP2005282204A JP2006135305A5 JP 2006135305 A5 JP2006135305 A5 JP 2006135305A5 JP 2005282204 A JP2005282204 A JP 2005282204A JP 2005282204 A JP2005282204 A JP 2005282204A JP 2006135305 A5 JP2006135305 A5 JP 2006135305A5
- Authority
- JP
- Japan
- Prior art keywords
- film
- forming
- release layer
- semiconductor
- semiconductor device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 claims 20
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims 16
- 238000000034 method Methods 0.000 claims 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 8
- 229910052757 nitrogen Inorganic materials 0.000 claims 8
- 229910052814 silicon oxide Inorganic materials 0.000 claims 8
- 239000000758 substrate Substances 0.000 claims 8
- 238000004519 manufacturing process Methods 0.000 claims 5
- 238000010438 heat treatment Methods 0.000 claims 4
- 238000007689 inspection Methods 0.000 claims 3
- 229910052779 Neodymium Inorganic materials 0.000 claims 2
- 239000000956 alloy Substances 0.000 claims 2
- 150000001875 compounds Chemical class 0.000 claims 2
- 239000012535 impurity Substances 0.000 claims 2
- 229910052741 iridium Inorganic materials 0.000 claims 2
- 239000000463 material Substances 0.000 claims 2
- 229910052750 molybdenum Inorganic materials 0.000 claims 2
- 229910052759 nickel Inorganic materials 0.000 claims 2
- 229910052762 osmium Inorganic materials 0.000 claims 2
- 229910052763 palladium Inorganic materials 0.000 claims 2
- 229910052703 rhodium Inorganic materials 0.000 claims 2
- 229910052707 ruthenium Inorganic materials 0.000 claims 2
- 239000000523 sample Substances 0.000 claims 2
- 238000000926 separation method Methods 0.000 claims 2
- 229910052715 tantalum Inorganic materials 0.000 claims 2
- 229910052719 titanium Inorganic materials 0.000 claims 2
- 229910052721 tungsten Inorganic materials 0.000 claims 2
- 229910052725 zinc Inorganic materials 0.000 claims 2
- 229910052726 zirconium Inorganic materials 0.000 claims 2
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2005282204A JP5072210B2 (ja) | 2004-10-05 | 2005-09-28 | 半導体装置の作製方法 |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2004292546 | 2004-10-05 | ||
| JP2004292546 | 2004-10-05 | ||
| JP2005282204A JP5072210B2 (ja) | 2004-10-05 | 2005-09-28 | 半導体装置の作製方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2006135305A JP2006135305A (ja) | 2006-05-25 |
| JP2006135305A5 true JP2006135305A5 (enExample) | 2008-08-14 |
| JP5072210B2 JP5072210B2 (ja) | 2012-11-14 |
Family
ID=36728531
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2005282204A Expired - Fee Related JP5072210B2 (ja) | 2004-10-05 | 2005-09-28 | 半導体装置の作製方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP5072210B2 (enExample) |
Families Citing this family (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101479747B (zh) | 2006-06-26 | 2011-05-18 | 株式会社半导体能源研究所 | 包括半导体器件的纸及其制造方法 |
| JP5094232B2 (ja) * | 2006-06-26 | 2012-12-12 | 株式会社半導体エネルギー研究所 | 半導体装置を内包する用紙およびその作製方法 |
| JP5204959B2 (ja) | 2006-06-26 | 2013-06-05 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| FR2906078B1 (fr) * | 2006-09-19 | 2009-02-13 | Commissariat Energie Atomique | Procede de fabrication d'une structure micro-technologique mixte et une structure ainsi obtenue |
| US8137417B2 (en) | 2006-09-29 | 2012-03-20 | Semiconductor Energy Laboratory Co., Ltd. | Peeling apparatus and manufacturing apparatus of semiconductor device |
| TWI433306B (zh) | 2006-09-29 | 2014-04-01 | Semiconductor Energy Lab | 半導體裝置的製造方法 |
| EP1970951A3 (en) * | 2007-03-13 | 2009-05-06 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
| JP5160119B2 (ja) * | 2007-03-29 | 2013-03-13 | 株式会社フジクラ | 半導体装置の製造方法 |
| WO2009044922A1 (ja) * | 2007-10-02 | 2009-04-09 | Nec Corporation | 機能性基体、薄膜素子構造の製造方法、薄膜素子構造の他の基板への転写方法 |
| US8047442B2 (en) * | 2007-12-03 | 2011-11-01 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| JP5216716B2 (ja) * | 2008-08-20 | 2013-06-19 | 株式会社半導体エネルギー研究所 | 発光装置及びその作製方法 |
| JP5581106B2 (ja) * | 2009-04-27 | 2014-08-27 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| TWI695525B (zh) | 2014-07-25 | 2020-06-01 | 日商半導體能源研究所股份有限公司 | 剝離方法、發光裝置、模組以及電子裝置 |
| JP2018006412A (ja) * | 2016-06-28 | 2018-01-11 | 学校法人東北学院 | 半導体装置 |
| JP7719090B2 (ja) | 2020-10-05 | 2025-08-05 | 富士フイルム株式会社 | 情報処理装置、情報処理装置の作動方法、情報処理装置の作動プログラム、及び情報管理システム |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62219954A (ja) * | 1986-03-20 | 1987-09-28 | Fujitsu Ltd | 三次元ｉｃの製造方法 |
| JP2866730B2 (ja) * | 1990-11-14 | 1999-03-08 | 日本電信電話株式会社 | 半導体回路の形成方法 |
| JP3809710B2 (ja) * | 1997-07-03 | 2006-08-16 | セイコーエプソン株式会社 | 薄膜素子の転写方法 |
| JP4042182B2 (ja) * | 1997-07-03 | 2008-02-06 | セイコーエプソン株式会社 | Ｉｃカードの製造方法及び薄膜集積回路装置の製造方法 |
| JP2001015721A (ja) * | 1999-04-30 | 2001-01-19 | Canon Inc | 複合部材の分離方法及び薄膜の製造方法 |
| JP4244120B2 (ja) * | 2001-06-20 | 2009-03-25 | 株式会社半導体エネルギー研究所 | 発光装置及びその作製方法 |
| JP4027740B2 (ja) * | 2001-07-16 | 2007-12-26 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| JP4373085B2 (ja) * | 2002-12-27 | 2009-11-25 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法、剥離方法及び転写方法 |
-
2005
- 2005-09-28 JP JP2005282204A patent/JP5072210B2/ja not_active Expired - Fee Related
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