JP2006121060A5 - - Google Patents

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Publication number
JP2006121060A5
JP2006121060A5 JP2005275070A JP2005275070A JP2006121060A5 JP 2006121060 A5 JP2006121060 A5 JP 2006121060A5 JP 2005275070 A JP2005275070 A JP 2005275070A JP 2005275070 A JP2005275070 A JP 2005275070A JP 2006121060 A5 JP2006121060 A5 JP 2006121060A5
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JP
Japan
Prior art keywords
layer
substrate
thin film
conductive layer
film transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2005275070A
Other languages
English (en)
Japanese (ja)
Other versions
JP5072208B2 (ja
JP2006121060A (ja
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Publication date
Application filed filed Critical
Priority to JP2005275070A priority Critical patent/JP5072208B2/ja
Priority claimed from JP2005275070A external-priority patent/JP5072208B2/ja
Publication of JP2006121060A publication Critical patent/JP2006121060A/ja
Publication of JP2006121060A5 publication Critical patent/JP2006121060A5/ja
Application granted granted Critical
Publication of JP5072208B2 publication Critical patent/JP5072208B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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JP2005275070A 2004-09-24 2005-09-22 半導体装置の作製方法 Expired - Fee Related JP5072208B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2005275070A JP5072208B2 (ja) 2004-09-24 2005-09-22 半導体装置の作製方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2004278548 2004-09-24
JP2004278548 2004-09-24
JP2005275070A JP5072208B2 (ja) 2004-09-24 2005-09-22 半導体装置の作製方法

Publications (3)

Publication Number Publication Date
JP2006121060A JP2006121060A (ja) 2006-05-11
JP2006121060A5 true JP2006121060A5 (enExample) 2008-11-06
JP5072208B2 JP5072208B2 (ja) 2012-11-14

Family

ID=36538601

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2005275070A Expired - Fee Related JP5072208B2 (ja) 2004-09-24 2005-09-22 半導体装置の作製方法

Country Status (1)

Country Link
JP (1) JP5072208B2 (enExample)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101385039B (zh) * 2006-03-15 2012-03-21 株式会社半导体能源研究所 半导体器件
JP5052079B2 (ja) * 2006-09-08 2012-10-17 株式会社半導体エネルギー研究所 センサ装置及びそれを有する容器類
JP5210613B2 (ja) 2006-12-27 2013-06-12 株式会社半導体エネルギー研究所 半導体装置
JP5179858B2 (ja) 2007-01-06 2013-04-10 株式会社半導体エネルギー研究所 半導体装置
JP2008217776A (ja) * 2007-02-09 2008-09-18 Semiconductor Energy Lab Co Ltd 半導体装置
US8816484B2 (en) * 2007-02-09 2014-08-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
EP1970951A3 (en) * 2007-03-13 2009-05-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
TWI476927B (zh) * 2007-05-18 2015-03-11 Semiconductor Energy Lab 半導體裝置的製造方法
EP2001047A1 (en) * 2007-06-07 2008-12-10 Semiconductor Energy Laboratory Co, Ltd. Semiconductor device
JP5072709B2 (ja) * 2008-05-20 2012-11-14 京セラドキュメントソリューションズ株式会社 画像形成装置及び消耗品ユニット
JP5586920B2 (ja) * 2008-11-20 2014-09-10 株式会社半導体エネルギー研究所 フレキシブル半導体装置の作製方法
JP6580863B2 (ja) 2014-05-22 2019-09-25 株式会社半導体エネルギー研究所 半導体装置、健康管理システム

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4748859B2 (ja) * 2000-01-17 2011-08-17 株式会社半導体エネルギー研究所 発光装置の作製方法
JP2002353235A (ja) * 2001-05-23 2002-12-06 Matsushita Electric Ind Co Ltd アクティブマトリクス基板とそれを用いた表示装置およびその製造方法
JP4244120B2 (ja) * 2001-06-20 2009-03-25 株式会社半導体エネルギー研究所 発光装置及びその作製方法
JP3972825B2 (ja) * 2003-01-28 2007-09-05 セイコーエプソン株式会社 アクティブマトリクス型表示装置の製造方法

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