JP2006121060A5 - - Google Patents

Claims (7)

Selectively forming a release layer on the first substrate;
Forming a first insulating layer in contact with the first substrate and the release layer;
Forming a first thin film transistor and a second thin film transistor on the first insulating layer;
Forming a second insulating layer on the first thin film transistor and the second thin film transistor;
Forming a first opening reaching the first substrate in the first insulating layer and the second insulating layer;
Forming a second opening reaching the first thin film transistor and a third opening reaching the second thin film transistor in the second insulating layer;
Forming a first conductive layer in the first opening and the second opening;
Forming a second conductive layer in the third opening;
Forming a fourth opening reaching the release layer in the first insulating layer and the second insulating layer;
Introducing an etchant into the fourth opening to remove the release layer;
The first substrate and the second substrate are bonded together so that the second conductive layer and the third conductive layer provided on the second substrate are electrically connected.
Peeling off the first substrate and transferring the first thin film transistor and the second thin film transistor to the second substrate;
The second substrate and the third substrate are bonded to each other so that the first conductive layer and a fourth conductive layer provided on the third substrate are electrically connected to each other. A method for manufacturing a semiconductor device. Oite to claim 1,
A method for manufacturing a semiconductor device, wherein a layer containing tungsten or molybdenum is formed as the separation layer. In claim 1 or claim 2,
The method for manufacturing a semiconductor device, wherein the etchant is a gas or a liquid containing halogen fluoride. A thin film integrated circuit, a first substrate having a first antenna or sensor, a second substrate having a second antenna,
Wherein the thin film integrated circuit, a semiconductor device characterized by being sandwiched between the front Symbol first substrate and the front Stories second substrate. In claim 4 ,
The thin film integrated circuit, said first antenna or said sensor, and a semiconductor device, wherein said second antenna, that are electrically connected by the conductive particles. A first conductive layer provided on the first substrate; a first insulating layer covering the first conductive layer; a first thin film transistor provided on the first insulating layer; A thin film transistor; a second insulating layer covering the first thin film transistor and the second thin film transistor; a second conductive layer and a third conductive layer provided on the second insulating layer; A fourth conductive layer provided on the substrate;
The second conductive layer, said second electrically connected to said first thin film transistor motor via a first opening provided in the insulating layer, and the first insulating layer and the first Electrically connected to the first conductive layer through a second opening provided in the two insulating layers ;
Said third conductive layer, the third is the opening electrically connected to the second thin film transistor motor via, and electrically to said fourth conductive layer provided on the second insulating layer wherein a that it is connected to. In claim 6,
A first resin layer is provided between the first substrate and the first insulating layer, and the first conductive layer and the second layer are formed by conductive particles contained in the first resin layer. The conductive layer is electrically connected,
A second resin layer is provided between the second substrate and the second insulating layer, and the third conductive layer and the fourth conductive layer are formed by conductive particles contained in the second resin layer. A semiconductor device, wherein the conductive layer is electrically connected.