JP2007157787A5 - - Google Patents
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- JP2007157787A5 JP2007157787A5 JP2005347120A JP2005347120A JP2007157787A5 JP 2007157787 A5 JP2007157787 A5 JP 2007157787A5 JP 2005347120 A JP2005347120 A JP 2005347120A JP 2005347120 A JP2005347120 A JP 2005347120A JP 2007157787 A5 JP2007157787 A5 JP 2007157787A5
- Authority
- JP
- Japan
- Prior art keywords
- layer
- adhesive member
- flexible substrate
- element forming
- layers
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000000853 adhesive Substances 0.000 claims 30
- 230000001070 adhesive Effects 0.000 claims 30
- 239000000758 substrate Substances 0.000 claims 27
- 230000015572 biosynthetic process Effects 0.000 claims 13
- 238000005755 formation reaction Methods 0.000 claims 13
- 238000004519 manufacturing process Methods 0.000 claims 10
- 239000004065 semiconductor Substances 0.000 claims 10
- 239000010409 thin film Substances 0.000 claims 1
Claims (10)
前記剥離層上に素子形成層を形成し、
前記素子形成層の一方の面に粘着部材を貼り付け、
前記基板と前記粘着部材が貼り付けられた前記素子形成層とを分離し、
前記素子形成層及び前記粘着部材を複数に分断し、
前記複数の素子形成層を前記粘着部材を用いてシートに貼り付け、
前記複数の素子形成層の他方の面に第１の可撓性基板を接着し、
前記複数の素子形成層から前記粘着部材を剥離し、
前記複数の素子形成層の一方の面に第２の可撓性基板を接着することを特徴とする半導体装置の作製方法。 Forming a release layer on the substrate,
The element formation layer is formed on the release layer,
Adhering an adhesive member to one surface of the element forming layer,
Separating the substrate and the element forming layer to which the adhesive member is attached;
Dividing the element forming layer and the adhesive member into a plurality of parts ,
The plurality of element forming layers are attached to a sheet using the adhesive member,
Bonding a first flexible substrate to the other surface of the plurality of element formation layers ;
Peeling off the adhesive member from the plurality of element forming layers ,
A method for manufacturing a semiconductor device , wherein a second flexible substrate is bonded to one surface of the plurality of element formation layers .
前記剥離層上に素子形成層を形成し、
前記素子形成層の一方の面に粘着部材を貼り付け、
前記基板と前記粘着部材が貼り付けられた前記素子形成層とを分離し、
前記素子形成層及び前記粘着部材を複数に分断し、
前記複数の素子形成層を前記粘着部材を用いてシートに貼り付け、
前記複数の素子形成層の他方の面に、前記粘着部材より粘着力の高い第１の粘着層を用いて第１の可撓性基板を接着し、
前記複数の素子形成層から前記粘着部材を剥離し、
前記複数の素子形成層の一方の面及び前記第１の可撓性基板に、第２の粘着層を用いて第２の可撓性基板を接着することを特徴とする半導体装置の作製方法。 Forming a release layer on the substrate,
The element formation layer is formed on the release layer,
Adhering an adhesive member to one surface of the element forming layer,
Separating the substrate and the element forming layer to which the adhesive member is attached;
Dividing the element forming layer and the adhesive member into a plurality of parts ,
The plurality of element forming layers are attached to a sheet using the adhesive member,
Adhering the first flexible substrate to the other surface of the plurality of element forming layers using a first adhesive layer having higher adhesive force than the adhesive member,
Peeling off the adhesive member from the plurality of element forming layers ,
A method for manufacturing a semiconductor device , comprising: bonding a second flexible substrate to one surface of the plurality of element formation layers and the first flexible substrate using a second adhesive layer.
前記剥離層上に素子形成層を形成し、
前記素子形成層の一方の面に粘着部材を貼り付け、
前記基板と前記粘着部材が貼り付けられた前記素子形成層とを分離し、
前記素子形成層及び前記粘着部材を複数に分断し、
前記複数の素子形成層を前記粘着部材を用いてシートに貼り付け、
前記複数の素子形成層の他方の面に第１の可撓性基板を接着し、
前記複数の素子形成層から前記粘着部材を剥離し、
前記複数の素子形成層の一方の面に第２の可撓性基板を接着し、
前記第１の可撓性基板及び前記第２の可撓性基板が接着する領域において分断することを特徴とする半導体装置の作製方法。 Forming a release layer on the substrate,
The element formation layer is formed on the release layer,
Adhering an adhesive member to one surface of the element forming layer,
Separating the substrate and the element forming layer to which the adhesive member is attached;
Dividing the element forming layer and the adhesive member into a plurality of parts ,
The plurality of element forming layers are attached to a sheet using the adhesive member,
Bonding a first flexible substrate to the other surface of the plurality of element formation layers ;
Peeling off the adhesive member from the plurality of element forming layers ,
Bonding a second flexible substrate to one surface of the plurality of element formation layers ;
A method for manufacturing a semiconductor device, wherein the first flexible substrate and the second flexible substrate are divided at a region where the first flexible substrate and the second flexible substrate are bonded to each other.
前記剥離層上に素子形成層を形成し、
前記素子形成層の一方の面に粘着部材を貼り付け、
前記基板と前記粘着部材が貼り付けられた前記素子形成層とを分離し、
前記素子形成層及び前記粘着部材を複数に分断し、
前記複数の素子形成層を前記粘着部材を用いてシートに貼り付け、
前記複数の素子形成層の他方の面に、前記粘着部材より粘着力の高い第１の粘着層を用いて第１の可撓性基板を接着し、
前記複数の素子形成層から前記粘着部材を剥離し、
前記複数の素子形成層の一方の面及び前記第１の可撓性基板に、第２の粘着層を用いて第２の可撓性基板を接着し、
前記第１の可撓性基板、前記第１の接着層、前記第２の接着層、及び前記第２の可撓性基板が接着する領域において分断することを特徴とする半導体装置の作製方法。 Forming a release layer on the substrate,
The element formation layer is formed on the release layer,
Adhering an adhesive member to one surface of the element forming layer,
Separating the substrate and the element forming layer to which the adhesive member is attached;
Dividing the element forming layer and the adhesive member into a plurality of parts ,
The plurality of element forming layers are attached to a sheet using the adhesive member,
Adhering the first flexible substrate to the other surface of the plurality of element forming layers using a first adhesive layer having higher adhesive force than the adhesive member,
Peeling off the adhesive member from the plurality of element forming layers ,
Adhering the second flexible substrate to one surface of the plurality of element formation layers and the first flexible substrate using a second adhesive layer,
A method for manufacturing a semiconductor device, wherein the first flexible substrate, the first adhesive layer , the second adhesive layer , and the second flexible substrate are divided at a region to which the first flexible substrate is bonded.
一対の第１のローラーを用いて前記複数の素子形成層の他方の面に第１の可撓性基板を接着することを特徴とする半導体装置の作製方法。 In any one of Claims 1 thru | or 4 ,
A method for manufacturing a semiconductor device, wherein a first flexible substrate is bonded to the other surface of the plurality of element formation layers using a pair of first rollers.
前記一対の第１のローラーの一方には、ヒータが設けられていることを特徴とする半導体装置の作製方法。 In claim 5 ,
A method for manufacturing a semiconductor device , wherein a heater is provided on one of the pair of first rollers.
一対の第２のローラーを用いて前記粘着部材を剥離することを特徴とする半導体装置の作製方法。 Any one to Oite of claims 1 to 6,
The method for manufacturing a semiconductor device characterized by peeling the front Kineba Chakubuzai using a pair of second rollers.
一対の第３のローラーを用いて前記複数の素子形成層の一方の面に第２の可撓性基板を接着することを特徴とする半導体装置の作製方法。 Any one to Oite of claims 1 to 7,
A method for manufacturing a semiconductor device , wherein a second flexible substrate is bonded to one surface of the plurality of element formation layers using a pair of third rollers.
前記一対の第３のローラーの一方には、ヒータが設けられていることを特徴とする半導体装置の作製方法。 In claim 8 ,
A method for manufacturing a semiconductor device , wherein a heater is provided on one of the pair of third rollers.
前記複数の素子形成層は、薄膜集積回路を有することを特徴とする半導体装置の作製方法。The method for manufacturing a semiconductor device, wherein the plurality of element formation layers include a thin film integrated circuit.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2005347120A JP5008299B2 (en) | 2005-11-30 | 2005-11-30 | Method for manufacturing semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2005347120A JP5008299B2 (en) | 2005-11-30 | 2005-11-30 | Method for manufacturing semiconductor device |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2007157787A JP2007157787A (en) | 2007-06-21 |
| JP2007157787A5 true JP2007157787A5 (en) | 2008-12-18 |
| JP5008299B2 JP5008299B2 (en) | 2012-08-22 |
Family
ID=38241811
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2005347120A Expired - Fee Related JP5008299B2 (en) | 2005-11-30 | 2005-11-30 | Method for manufacturing semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP5008299B2 (en) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8094027B2 (en) * | 2007-12-19 | 2012-01-10 | Abbott Laboratories | Method for molding an object containing a radio frequency identification tag |
| WO2010035627A1 (en) * | 2008-09-25 | 2010-04-01 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| KR101357143B1 (en) * | 2012-04-26 | 2014-02-04 | 하나 마이크론(주) | Apparatus and Method for transferring integrated circuit device |
| KR102309244B1 (en) | 2013-02-20 | 2021-10-05 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | Semiconductor device |
| KR101449250B1 (en) * | 2013-03-04 | 2014-10-10 | 한국과학기술원 | Method for manufacturing flexible VLSI using rollers and flexible VLSI manufactured by the same |
| US10586817B2 (en) * | 2016-03-24 | 2020-03-10 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, manufacturing method thereof, and separation apparatus |
| TWI669177B (en) * | 2018-02-22 | 2019-08-21 | 東捷科技股份有限公司 | Wheel-to-wheel rolling welding equipment |
| WO2020026878A1 (en) * | 2018-07-31 | 2020-02-06 | 株式会社ハリーズ | Electronic component mounting device and method for manufacturing electronic component mounted body |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002236896A (en) * | 2001-02-07 | 2002-08-23 | Toppan Printing Co Ltd | Ic tag having heat seal performance |
| JP3956697B2 (en) * | 2001-12-28 | 2007-08-08 | セイコーエプソン株式会社 | Manufacturing method of semiconductor integrated circuit |
| JP4215998B2 (en) * | 2002-04-30 | 2009-01-28 | リンテック株式会社 | Semiconductor wafer processing method and semiconductor wafer transfer apparatus therefor |
| JP4310685B2 (en) * | 2003-09-03 | 2009-08-12 | セイコーエプソン株式会社 | Transfer device |
| JP5030388B2 (en) * | 2004-03-22 | 2012-09-19 | 株式会社半導体エネルギー研究所 | Method for manufacturing thin film integrated circuit |
-
2005
- 2005-11-30 JP JP2005347120A patent/JP5008299B2/en not_active Expired - Fee Related
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