JP2011040449A5

JP2011040449A5 -

Info

Publication number: JP2011040449A5
Application number: JP2009184114A
Authority: JP
Filing date: 2009-08-07
Publication date: 2012-09-20

Description

さらに、本発明では、上述したダイシングテープを使用した半導体装置の製造方法も提供できる。
すなわち、本発明によれば、ウェハの裏面に、ダイシングテープを貼り付ける工程と、
前記ダイシングテープが貼り付けられたウェハに対し、前記ダイシングテープ側からレーザ光を照射し、ダイシングテープを介してレーザ光を前記ウェハまで到達させ、前記ウェハをダイシングする工程と、
を含み、
前記ダイシングテープは、粘着層と、
前記粘着層が積層される基材と、
を備え、
前記基材は、カリウムアイオノマーを含む層を備えることを特徴とする半導体装置の製造方法も提供できる。

Furthermore, the present invention can also provide a method for manufacturing a semiconductor device using the above-described dicing tape.
That is, according to the present invention, a step of attaching a dicing tape to the back surface of the wafer;
Irradiating a laser beam from the dicing tape side with respect to the wafer to which the dicing tape is attached, allowing the laser beam to reach the wafer through the dicing tape, and dicing the wafer ;
Including
The dicing tape includes an adhesive layer,
A substrate on which the adhesive layer is laminated;
With
The base material may include a layer containing a potassium ionomer, and a semiconductor device manufacturing method may be provided.

Claims

A substrate for dicing tape that is used for laser dicing, in which a dicing tape is attached to the back surface of a wafer, laser light is transmitted through the dicing tape, and laser light is allowed to reach the inside of the wafer to dice the wafer. And
A substrate for dicing tape comprising a layer containing potassium ionomer.

In the base material for dicing tapes according to claim 1,
The surface resistivity of the substrate for dicing tape is 1.0 × 10 ^８8 Ω / cm ^２2 1.0 × 10 or more ^１０10 Ω / cm ^２2 The substrate for dicing tape which is the following.

In the base material for dicing tapes according to claim 1 or 2 ,
A substrate for dicing tape having a light transmittance of 90% or more for visible light.

In the base material for dicing tapes in any one of Claims 1 thru | or 3 ,
A substrate for dicing tape having a surface roughness Ra on the front surface side and the back surface side of 1.0 μm or less.

In the base material for dicing tapes in any one of Claims 1 thru | or 4 ,
The layer containing potassium ionomer is a substrate for dicing tape containing potassium ionomer and polypropylene resin.

In the base material for dicing tapes in any one of Claims 1 thru | or 5 ,
The substrate for dicing tape, wherein the potassium ionomer is an ionomer in which at least a part of the ethylene-unsaturated carboxylic acid copolymer is neutralized with potassium.

In the base material for dicing tapes in any one of Claims 1 thru | or 6 ,
A substrate for dicing tape, wherein the substrate for dicing tape comprises a layer containing potassium ionomer.

In the base material for dicing tapes in any one of Claims 1 thru | or 6 ,
A substrate for dicing tape having a structure in which a layer containing the potassium ionomer is sandwiched between a pair of layers containing a polypropylene resin.

An adhesive layer;
A substrate on which the adhesive layer is laminated,
The said base material is a dicing tape which is a base material for dicing tapes in any one of Claims 1 thru | or 8 .

A process of attaching a dicing tape to the back surface of the wafer;
Irradiating a laser beam from the dicing tape side with respect to the wafer to which the dicing tape is attached, allowing the laser beam to reach the wafer through the dicing tape, and dicing the wafer ;
Including
The dicing tape includes an adhesive layer,
A substrate on which the adhesive layer is laminated;
With
The method for manufacturing a semiconductor device, wherein the base material includes a layer containing potassium ionomer .

The surface resistivity of the substrate is 1.0 × 10 ^８8 Ω / cm ^２2 1.0 × 10 or more ^１０10 Ω / cm ^２2 The method for manufacturing a semiconductor device according to claim 10, wherein: