JP2005252242A5

JP2005252242A5 -

Info

Publication number: JP2005252242A5
Application number: JP2005024322A
Authority: JP
Filing date: 2005-01-31
Publication date: 2008-01-17
Anticipated expiration: 2025-01-31

Claims

Forming a release layer on an insulating substrate;
Forming a plurality of thin film integrated circuits on the release layer;
Forming a groove at a boundary between the plurality of thin film integrated circuits to expose the release layer;
Laminating an antenna substrate having an opening and an antenna formed on the plurality of thin film integrated circuits,
A gas or liquid containing a halide is introduced into the opening, and the peeling layer is removed to peel off the insulating substrate, and the plurality of thin film integrated circuits are integrated by the antenna substrate. A method for manufacturing a thin film integrated circuit.

Forming a release layer on an insulating substrate;
Forming a plurality of thin film integrated circuits on the release layer;
Forming a groove at a boundary between the plurality of thin film integrated circuits to expose the release layer;
Laminating an antenna substrate having an opening and an antenna formed on the plurality of thin film integrated circuits,
A gas or liquid containing a halide is introduced into the opening, the insulating substrate is peeled by removing the peeling layer, and the plurality of thin film integrated circuits are integrated by the antenna substrate, A method for manufacturing a thin film integrated circuit, wherein the plurality of integrated thin film integrated circuits are bonded to a flexible substrate.

Forming a release layer on an insulating substrate;
Forming a plurality of thin film integrated circuits on the release layer;
By selectively forming a groove at a boundary between the plurality of thin film integrated circuits, exposing a part of the peeling layer and forming a connection region including a part of the thin film integrated circuit;
The insulating substrate is peeled by introducing a gas or liquid containing a halide into the groove, and the peeling layer is removed, and the plurality of thin film integrated circuits are integrated by the connection region. A method for manufacturing a thin film integrated circuit.

Forming a release layer on an insulating substrate;
Forming a plurality of thin film integrated circuits on the release layer;
By selectively forming a groove at a boundary between the plurality of thin film integrated circuits, exposing a part of the peeling layer and forming a connection region including a part of the thin film integrated circuit;
A gas or liquid containing a halide is introduced into the groove, and the insulating layer is peeled off by removing the peeling layer, and the plurality of thin film integrated circuits are integrated by the connection region. A method for manufacturing a thin film integrated circuit, wherein an antenna is attached to the thin film integrated circuit.

Forming a release layer on an insulating substrate;
Forming a plurality of thin film integrated circuits on the release layer;
By selectively forming a groove at a boundary between the plurality of thin film integrated circuits, exposing a part of the peeling layer and forming a connection region including a part of the thin film integrated circuit;
A gas or liquid containing a halide is introduced into the groove, and the insulating layer is peeled off by removing the peeling layer, and the plurality of thin film integrated circuits are integrated by the connection region. A method for manufacturing a thin film integrated circuit, comprising: bonding the plurality of thin film integrated circuits to a flexible substrate, and attaching an antenna on the integrated thin film integrated circuit.

Forming a release layer on an insulating substrate;
Forming a plurality of thin film integrated circuits on the release layer;
By selectively forming a groove at a boundary between the plurality of thin film integrated circuits, exposing a part of the peeling layer and forming a connection region including a part of the thin film integrated circuit;
The insulating substrate is formed by laminating an antenna substrate having an opening and an antenna formed on the plurality of thin film integrated circuits, introducing a gas or liquid containing a halide into the groove and the opening, and removing the release layer. A method for manufacturing a thin film integrated circuit, wherein the substrate is peeled off and the plurality of thin film integrated circuits are integrated by the antenna substrate.

In any one of Claims 1 thru | or 6 ,
A method for manufacturing a thin film integrated circuit, wherein ClF ₃ is used as the halide.

In any one of Claims 1, 2, 4 thru | or 7 ,
Anisotropic conductor, or a method for manufacturing a thin film integrated circuit, characterized in that laminating the antenna to the thin film integrated circuit by using an ultraviolet curable resin.

In any one of claims 1, 2, 4 to 8 ,
The antenna, a droplet discharge method, printing method, off O preparative lithography and any of an evaporation method using a metal mask, or a method for manufacturing a thin film integrated circuit and forming a combined method thereof .

In any one of Claims 1 thru | or 9 ,
The method for manufacturing a thin film integrated circuit, wherein the peeling layer includes any one of an amorphous semiconductor containing silicon, a semi-amorphous semiconductor, a microcrystalline semiconductor, and a crystalline semiconductor.

In any one of Claims 1 thru | or 10 ,
Wherein the plurality of thin film integrated circuits are source regions, respectively, the drain region, and has a semiconductor film to have a channel forming region,
The method for manufacturing a thin film integrated circuit, wherein the source region, the drain region, and the channel formation region are formed so as to be perpendicular to a direction in which the mounting article is bent.

In any one of Claims 1 thru | or 11 ,
Scan Kuraibingu or by a laser cutting method, cutting the plurality of thin film integrated circuit, a method for manufacturing a thin film integrated circuit, characterized in that forming each thin film integrated circuit.

An insulating substrate on which a plurality of thin film integrated circuits are formed via a release layer; and an antenna substrate provided to face the insulating substrate;
The element substrate for a thin film integrated circuit , wherein the antenna substrate has an antenna and an opening, and a groove is provided between the thin film integrated circuits so as to coincide with the opening.

An insulating substrate on which a plurality of thin film integrated circuits are formed via a release layer, and the plurality of thin film integrated circuits are integrated by a connection region, and an antenna substrate provided opposite to the insulating substrate. Have
The antenna substrate has an antenna and an opening, a groove is provided between the thin film integrated circuits so as to coincide with the opening, and an opening is provided in the thin film integrated circuit. An element substrate for a thin film integrated circuit .