JP4244120B2 - Light emitting device and manufacturing method thereof - Google Patents

Description

【０２６０】
(M.A.Baldo, D.F.O'Brien, Y.You, A.Shoustikov, S.Sibley, M.E.Thompson, S.R.Forrest, Nature 395 (1998) p.151.)
【０２６１】
上記の論文により報告された有機発光材料（Ｐｔ錯体）の分子式を以下に示す。
【０２６２】
【化２】

【０２６３】
(M.A.Baldo, S.Lamansky, P.E.Burrrows, M.E.Thompson, S.R.Forrest, Appl.Phys.Lett.,75 (1999) p.4.) (T.Tsutsui, M.-J.Yang, M.Yahiro, K.Nakamura, T.Watanabe, T.tsuji, Y.Fukuda, T.Wakimoto, S.Mayaguchi, Jpn.Appl.Phys., 38 (12B) (1999) L1502.)
【０２６４】
上記の論文により報告された有機発光材料（Ｉｒ錯体）の分子式を以下に示す。
【０２６５】
【化３】

【０２６６】
以上のように三重項励起子からの燐光発光を利用できれば原理的には一重項励起子からの蛍光発光を用いる場合より３〜４倍の高い外部発光量子効率の実現が可能となる。
【０２６７】
なお、本実施例の構成は、実施例１〜実施例５のいずれの構成とも自由に組み合わせて実施することが可能である。
【０２６８】
（実施例７）
有機発光材料は、一般的にインクジェット法、スピンコート法、蒸着法を用いて成膜されている。本実施例では、上記方法以外の、有機発光層の成膜方法について説明する。
【０２６９】
本実施例では、有機発光材料を構成している分子の集合体を分散させたコロイド溶液（ゾルとも呼ぶ）を用いたスプレー噴射により、不活性ガス雰囲気下で基板上に有機発光材料の分子の集合体を含む膜を形成する。なお、有機発光材料は、液体中に数個の分子が集合した粒子として存在している。
【０２７０】
図１５に、有機発光材料であるイリジウム錯体、トリス（２−フェニルピリジン）イリジウム（Ｉｒ（ｐｐｙ）₃）と、ホストとなる有機発光材料（以下、ホスト材料という）であるバソキュプロイン（ＢＣＰ）とをトルエンに分散させた組成物を、不活性ガス（本実施例では窒素ガス）でノズル（図示しない）から噴射させて、有機発光層６５０を成膜している様子を示す。
【０２７１】
なお、図１５では、マスク６５１を用いて選択的に有機発光層６５０を２５〜４０ｎｍの膜厚で成膜する。イリジウム錯体はトルエンに不溶であり、またＢＣＰもトルエンに不溶である。
【０２７２】
実際には、有機発光層は単層で用いる場合と、複数の層を積層して用いる場合とがある。複数の層を積層して用いる場合、有機発光層６５０を成膜した後に、別の有機発光層を同様に成膜して積層する。この場合、積層された全ての有機発光層をまとめて有機発光層と総称する。
【０２７３】
本実施例の成膜方法では、液体中の有機発光材料がどのような状態であろうとも成膜可能な手段であり、特に溶解しにくい有機発光材料を用いて良質な有機発光層を形成することができる。そして、キャリアガスを用いて有機発光材料を含む液体を噴射（スプレー）させて成膜を行うため、短時間で成膜が可能である。また、噴射させる有機発光材料を含む液体の作製方法は、非常に単純なものとすることができる。また、本実施例は、所望のパターンの膜を形成する場合には、マスクを用い、マスクの開口部を通過させて成膜を行う。また、高価な有機発光材料を効率よく使用するため、マスクに付着した有機発光材料を収集し、再度利用することも可能である。
【０２７４】
インクジェット法及びスピンコート法では、溶媒に対する溶解度が高い有機発光材料は用いることができないという制約があった。また蒸着法では、蒸着させる前に有機発光材料自体が分解してしまう有機発光材料は、用いることができないという制約があった。しかし本実施例の成膜方法は、上述した制約にしばられない。
【０２７５】
本実施例の成膜方法に適している有機発光材料として、キナクリドン、トリス（２−フェニルピリジン）イリジウム、バソキュプロイン、ポリ（１，４−フェニレンビニレン）、ポリ（１，４−ナフタレンビニレン）、ポリ（２−フェニル−１，４−フェニレンビニレン）、ポリチオフェン、ポリ（３−フェニルチオフェン）、ポリ（１，４−フェニレン）、ポリ（２，７−フルオレン）等が挙げられる。
【０２７６】
なお、本実施例の構成は、実施例１〜実施例６のいずれの構成とも自由に組み合わせて実施することが可能である。
【０２７７】
（実施例８）
本実施例では、本発明の発光装置の、画素部の詳細な上面構造を図１６（Ａ）に、回路図を図１６（Ｂ）に示す。図１６（Ａ）及び図１６（Ｂ）では共通の符号を用いるので互いに参照すれば良い。
【０２７８】
スイッチング用ＴＦＴ８０２のソース領域とドレイン領域は、一方ははソース配線８１５に電気的に接続され、他方はドレイン配線８０５に電気的に接続される。また、ドレイン配線８０５は電流制御用ＴＦＴ８０６のゲート電極８０７に電気的に接続される。また、電流制御用ＴＦＴ８０６のソース領域とドレイン領域は、一方は電流供給線８１６に電気的に接続され、他方はドレイン配線８１７に電気的に接続される。また、ドレイン配線８１７は点線で示される画素電極８１８に電気的に接続される。
【０２７９】
このとき、８１９で示される領域には保持容量が形成される。保持容量８１９は、電流供給線８１６と電気的に接続された半導体膜８２０、ゲート絶縁膜と同一層の絶縁膜（図示せず）及びゲート電極８０７との間で形成される。また、ゲート電極８０７、第１層間絶縁膜と同一の層（図示せず）及び電流供給線８１６で形成される容量も保持容量として用いることが可能である。
【０２８０】
本実施例は、実施例１〜７と組み合わせることが可能である。
【０２８１】
（実施例９）
本実施例では本発明の発光装置の回路構成例を図１７に示す。なお、本実施例ではデジタル駆動を行うための回路構成を示す。本実施例では、ソース側駆動回路９０１、画素部９０６及びゲート側駆動回路９０７を有している。
【０２８２】
ソース側駆動回路９０１は、シフトレジスタ９０２、ラッチ（Ａ）９０３、ラッチ（Ｂ）９０４、バッファ９０５を設けている。なお、アナログ駆動の場合はラッチ（Ａ）、（Ｂ）の代わりにサンプリング回路（トランスファゲート）を設ければ良い。また、ゲート側駆動回路９０７は、シフトレジスタ９０８、バッファ９０９を設けている。バッファ９０９は必ずしも設ける必要はない。
【０２８３】
また、本実施例において、画素部９０６は複数の画素を含み、その複数の画素にＯＬＥＤが設けられている。このとき、ＯＬＥＤの陰極は電流制御ＴＦＴのドレインに電気的に接続されていることが好ましい。
【０２８４】
これらソース側駆動回路９０１およびゲート側駆動回路９０７は実施例２〜４で得られるｎチャネル型ＴＦＴまたはｐチャネル型ＴＦＴで形成されている。
【０２８５】
なお、図示していないが、画素部９０６を挟んでゲート側駆動回路９０７の反対側にさらにゲート側駆動回路を設けても良い。この場合、双方は同じ構造でゲート配線を共有しており、片方が壊れても残った方からゲート信号を送って画素部を正常に動作させるような構成とする。
【０２８６】
本実施例は、実施例１〜８と組み合わせることが可能である。
【０２８７】
（実施例１０）
本実施例は、可撓性を有するプラスチック基板上に、ロールツーロール方式で封止膜を成膜する方法について説明する。
【０２８８】
図１９に、本実施例の成膜装置の構成を簡単に示す。図１９に示した本発明の成膜装置は、スパッタによりバリア膜を成膜する２つのチャンバー８０４、８０９と、チャンバー８０４、８０９内の気圧を制御するためのチャンバー８０５、８０６、８０７、８０８と、樹脂を塗布する機構８２０と、塗布した樹脂を硬化させる機構８１３を有している。
【０２８９】
スパッタによりバリア膜を成膜するチャンバー８０４には、基板８０２の巻き出しのためのロール８０１と、ターゲットを有する印加電極８１０と、電極も兼ねているヒーター８１１とが備えられている。スパッタによりバリア膜を成膜するチャンバー８０９には、基板８０２の巻き取りのためのロール８０３と、ターゲットを有する印加電極８１４と、電極も兼ねているヒーター８１５とが備えられている。
【０２９０】
巻き出し用ロール８０１から巻き取り用ロール８０３へと基板８０２が搬送される。
【０２９１】
本実施例ではチャンバー８０４において窒化珪素を成膜した。具体的には、チャンバー８０４内の気圧をターボ分子ポンプ等により０．４Ｐａに保ち、アルゴン１０ＳＣＣＭ、窒素３５ＳＣＣＭ、水素５ＳＣＣＭの流量で流した。
【０２９２】
チャンバー８０４において窒化珪素膜が成膜された基板８０２は、チャンバー８０５、８０６を順に通過した後に、大気圧下におかれ、樹脂を塗布する機構８２０により樹脂８１２が塗布される。なお、チャンバー８０５、８０６は共にターボ分子ポンプ等により真空排気されており、チャンバー８０４内の気圧を大気圧の影響を受けずに、所望の高さに保つようにするために設けている。なお本実施例では、２つのチャンバー８０５、８０６を用いて大気圧の影響を防いでいるが、このようなチャンバーは場合によっては１つでも良く、また必要に応じて３つ以上設けても良い。
【０２９３】
樹脂８１２は、本実施例では熱重合するタイプのポリエチレンを用いる。樹脂８１２を塗布した後、ハロゲンランプ８１３により基板８０２を加熱し、塗布した樹脂８１２を硬化させる。
【０２９４】
なお、本実施例では、塗布した樹脂を硬化させる機構８１３として、具体的には基板を加熱するためのハロゲンランプが備えられている。なお、加熱により樹脂を硬化する場合、ハロゲンランプに限定されず、赤外ランプ、メタルハライドランプ、キセノンアークランプ、カーボンアークランプ、高圧ナトリウムランプまたは高圧水銀ランプを用いることが可能である。また、ランプに限らず、ヒーター等を用いて加熱するようにしても良い。そして樹脂が熱硬化樹脂ではなく紫外線硬化樹脂の場合、紫外光の照射により樹脂を硬化するようにしてもよい。
【０２９５】
そして樹脂が成膜された基板８０２がチャンバー８０７、８０８に送られ、最終的にチャンバー８０９に到達する。なおチャンバー８０７、８０８は共にターボ分子ポンプ等により真空排気されており、チャンバー８０９内の気圧を大気圧の影響を受けずに、所望の高さに保つようにするために設けている。なお本実施例では、２つのチャンバー８０７、８０８を用いて大気圧の影響を防いでいるが、このようなチャンバーは場合によっては１つでも良く、また必要に応じて３つ以上設けても良い。
【０２９６】
チャンバー８０９において窒化酸化珪素を成膜した。具体的には、チャンバー８０９内の気圧をターボ分子ポンプ等により０．４Ｐａに保ち、アルゴン１０ＳＣＣＭ、窒素３１ＳＣＣＭ、水素５ＳＣＣＭ、Ｎ₂Ｏ４ＳＣＣＭの流量で流した。
【０２９７】
窒化酸化珪素が成膜された基板８０２は、巻き取り用ロール８０３によって巻き取られる。
【０２９８】
上記構成により、２層のバリア膜の間に１層の応力緩和膜が設けられた封止膜を有する可撓性のプラスチック基板の大量生産を容易に行うことができる。
【０２９９】
なお本実施例では、窒化珪素膜と、ポリエチレンからなる膜と、窒化酸化珪素膜とを積層した封止膜を形成する成膜装置について説明したが、バリア膜はこの材料に限定されない。また応力緩和膜は、バリア膜よりも応力の小さい樹脂であれば良く、ポリエチレンに限定されない。
【０３００】
また、本実施例ではバリア膜を２層成膜する場合について説明したが、バリア膜は３層以上成膜しても良く、その都度スパッタ用のチャンバーと、大気圧の影響を防ぐためのチャンバーと、樹脂を塗布する機構と、塗布した樹脂を硬化させる機構とを適宜設ければ良い。
【０３０１】
また、巻き取り用ロール８０３によって基板８０２を巻き取った後、巻き取られた基板を、巻き出し用ロール８０１で再び巻き取り、再度同じ工程を繰り返すことでバリア膜と応力緩和膜の多層膜からなる封止膜を成膜するようにしてもよい。
【０３０２】
本実施例は、実施例１〜９と組み合わせることが可能である。
【０３０３】
（実施例１１）
発光装置は自発光型であるため、液晶ディスプレイに比べ、明るい場所での視認性に優れ、視野角が広い。従って、様々な電子機器の表示部に用いることができる。
【０３０４】
本発明の発光装置を用いた電子機器として、ビデオカメラ、デジタルカメラ、ゴーグル型ディスプレイ（ヘッドマウントディスプレイ）、ナビゲーションシステム、音響再生装置（カーオーディオ、オーディオコンポ等）、ノート型パーソナルコンピュータ、ゲーム機器、携帯情報端末（モバイルコンピュータ、携帯電話、携帯型ゲーム機または電子書籍等）、記録媒体を備えた画像再生装置（具体的にはＤＶＤ（ｄｉｇｉｔａｌ ｖｅｒｓａｔｉｌｅ ｄｉｓｃ）等の記録媒体を再生し、その画像を表示しうるディスプレイを備えた装置）などが挙げられる。特に、斜め方向から画面を見る機会が多い携帯情報端末は、視野角の広さが重要視されるため、発光装置を用いることが望ましい。それら電子機器の具体例を図１８に示す。
【０３０５】
図１８（Ａ）はデジタルスチルカメラであり、本体２１０１、表示部２１０２、受像部２１０３、操作キー２１０４、外部接続ポート２１０５、シャッター２１０６等を含む。本発明の発光装置は表示部２１０２に用いることができる。
【０３０６】
図１８（Ｂ）はモバイルコンピュータであり、本体２３０１、表示部２３０２、スイッチ２３０３、操作キー２３０４、赤外線ポート２３０５等を含む。本発明の発光装置は表示部２３０２に用いることができる。
【０３０７】
図１８（Ｃ）はゴーグル型ディスプレイ（ヘッドマウントディスプレイ）であり、本体２５０１、表示部２５０２、アーム部２５０３を含む。本発明の発光装置は表示部２５０２に用いることができる。
【０３０８】
ここで図１８（Ｄ）は携帯電話であり、本体２７０１、筐体２７０２、表示部２７０３、音声入力部２７０４、音声出力部２７０５、操作キー２７０６、外部接続ポート２７０７、アンテナ２７０８等を含む。本発明の発光装置は表示部２７０３に用いることができる。なお、表示部２７０３は黒色の背景に白色の文字を表示することで携帯電話の消費電力を抑えることができる。
【０３０９】
なお、将来的に有機発光材料の発光輝度が高くなれば、出力した画像情報を含む光をレンズ等で拡大投影してフロント型若しくはリア型のプロジェクターに用いることも可能となる。
【０３１０】
また、上記電子機器はインターネットやＣＡＴＶ（ケーブルテレビ）などの電子通信回線を通じて配信された情報を表示することが多くなり、特に動画情報を表示する機会が増してきている。有機発光材料の応答速度は非常に高いため、発光装置は動画表示に好ましい。
【０３１１】
また、発光装置は発光している部分が電力を消費するため、発光部分が極力少なくなるように情報を表示することが望ましい。従って、携帯情報端末、特に携帯電話や音響再生装置のような文字情報を主とする表示部に発光装置を用いる場合には、非発光部分を背景として文字情報を発光部分で形成するように駆動することが望ましい。
【０３１２】
以上の様に、本発明の適用範囲は極めて広く、あらゆる分野の電子機器に用いることが可能である。また、本実施例の電子機器は実施例１〜１０に示したいずれの構成の発光装置を用いても良い。
【０３１３】
【発明の効果】
本発明では、複数のバリア膜を積層することで、バリア膜にクラックが生じても、他のバリア膜で水分や酸素の有機発光層への混入を効果的に防ぐことができる。さらに、成膜温度が低いためにバリア膜の膜質が低下するようなことがあっても、複数のバリア膜を積層することで、水分や酸素の有機発光層への混入を効果的に防ぐことができる。
【０３１４】
また、バリア膜に比べて応力が小さい応力緩和膜を、バリア膜の間に挟むことで、絶縁膜全体の応力を緩和することができる。よって、トータルのバリア膜の厚さは同じであっても、１層のみのバリア膜に比べて、応力緩和膜を間に挟んだバリア膜は、応力によるクラックが入りにくい。
【０３１５】
したがって、１層のみのバリア膜に比べて、トータルのバリア膜の膜厚は同じであっても、水分や酸素の有機発光層への混入を効果的に防ぐことができ、さらに、応力によるクラックが入りにくい。
【図面の簡単な説明】
【図１】 本発明の発光装置の作製方法を示す図。
【図２】 本発明の発光装置の作製方法を示す図。
【図３】 本発明の発光装置の作製方法を示す図。
【図４】 本発明の発光装置の作製方法を示す図。
【図５】 本発明の発光装置の外観図と、ＦＰＣとの接続部分の拡大図と断面図。
【図６】 本発明の発光装置を撓めた様子を示す図と、その断面図。
【図７】 本発明の発光装置のＦＰＣとの接続部分の断面図。
【図８】 本発明の発光装置の作製方法を示す図。
【図９】 本発明の発光装置の作製方法を示す図。
【図１０】 本発明の発光装置のＴＦＴ及びＯＬＥＤの作製工程を示す図。
【図１１】 本発明の発光装置のＴＦＴ及びＯＬＥＤの作製工程を示す図。
【図１２】 本発明の発光装置のＴＦＴ及びＯＬＥＤの作製工程を示す図。
【図１３】 本発明の発光装置の断面図。
【図１４】 ウォータージェット法で接着層を除去している様子を示す図。
【図１５】 スプレー噴射により有機発光層を成膜している様子を示す図。
【図１６】 画素の上面図及び画素の回路図。
【図１７】 発光装置の回路構成を示す図。
【図１８】 本発明の発光装置を用いた電子機器の図。
【図１９】 ロールツーロール方式の封止膜成膜装置の図。[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a method for manufacturing a semiconductor device, and particularly relates to a light emitting device having a light emitting element formed on a plastic substrate, for example, an organic light emitting diode (OLED). The present invention also relates to an OLED module in which an IC including a controller is mounted on the OLED panel. In this specification, the OLED panel and the OLED module are collectively referred to as a light emitting device. The present invention further relates to an electronic apparatus using the light emitting device.
[0002]
[Prior art]
In recent years, technology for forming TFTs (Thin Film Transistors) on a substrate has greatly advanced, and application development to active matrix display devices has been promoted. In particular, a TFT using a polysilicon film has a higher field effect mobility (also referred to as mobility) than a TFT using a conventional amorphous silicon film, and thus can operate at high speed. For this reason, it is possible to control a pixel, which has been conventionally performed by a drive circuit outside the substrate, with a drive circuit formed on the same substrate as the pixel.
[0003]
Such an active matrix display device has various advantages such as a reduction in manufacturing cost, a reduction in size of the display device, an increase in yield, and an increase in throughput by forming various circuits and elements on the same substrate. .
[0004]
In addition, active matrix light-emitting devices (hereinafter simply referred to as light-emitting devices) having OLEDs as self-luminous elements are being actively researched. The light emitting device is also called an organic light emitting diode (OELD) or an organic light emitting diode (OLED).
[0005]
The OLED emits light by itself and has high visibility, is not required for a backlight necessary for a liquid crystal display device (LCD), is optimal for thinning, and has no restriction on the viewing angle. Therefore, in recent years, light emitting devices using OLEDs have attracted attention as display devices that replace CRTs and LCDs.
[0006]
The OLED has a layer (hereinafter, referred to as an organic light emitting layer) containing an organic compound (organic light emitting material) capable of obtaining luminescence generated by applying an electric field, an anode layer, and a cathode layer. . Luminescence in organic compounds includes light emission (fluorescence) when returning from the singlet excited state to the ground state and light emission (phosphorescence) when returning from the triplet excited state to the ground state. Any one of the above-described light emission may be used, or both light emission may be used.
[0007]
In this specification, all layers formed between the anode and the cathode of the OLED are defined as organic light emitting layers. Specifically, the organic light emitting layer includes a light emitting layer, a hole injection layer, an electron injection layer, a hole transport layer, an electron transport layer, and the like. Basically, the OLED has a structure in which an anode / light emitting layer / cathode is laminated in this order. In addition to this structure, the anode / hole injection layer / light emitting layer / cathode and the anode / hole injection layer / The light emitting layer / electron transport layer / cathode may be stacked in this order. Moreover, the inorganic compound may be contained in these layers.
[0008]
[Problems to be solved by the invention]
Various applications using such a light-emitting device are expected, but in particular, the use of the light-emitting device in a portable device is attracting attention because the thickness of the light-emitting device is thin, and thus the weight can be reduced. Therefore, it has been attempted to form an OLED on a flexible plastic film.
[0009]
A light emitting device in which an OLED is formed on a flexible substrate such as a plastic film can be used for a display having a curved surface, a show window, etc. in addition to being thin and lightweight. . Therefore, the application is not limited to portable devices, and the application range is very wide.
[0010]
However, a substrate made of plastic is generally easy to transmit moisture and oxygen, and the organic light emitting layer is easily deteriorated by these materials, so that the life of the light emitting device is likely to be shortened. Therefore, conventionally, an insulating film such as silicon nitride or silicon nitride oxide is provided between the plastic substrate and the OLED to prevent moisture and oxygen from being mixed into the organic light emitting layer.
[0011]
However, a substrate such as a plastic film is generally vulnerable to heat, and if the film formation temperature of an insulating film such as silicon nitride or silicon nitride oxide is too high, the substrate is likely to be deformed. However, if the film forming temperature is too low, the film quality is deteriorated and it becomes difficult to sufficiently prevent the permeation of moisture and oxygen.
[0012]
Further, when the thickness of an insulating film such as silicon nitride or silicon nitride oxide is increased in order to prevent moisture and oxygen from permeating, stress increases and cracks are likely to occur. Further, when the film thickness is increased, the film is likely to crack when the substrate is bent.
[0013]
In view of the above problems, an object of the present invention is to provide a light emitting device having an OLED formed on a plastic substrate capable of suppressing deterioration due to permeation of moisture and oxygen.
[0014]
[Means for Solving the Problems]
The present invention provides a plurality of films (hereinafter referred to as barrier films) that prevent oxygen and moisture from entering an organic light emitting layer of an OLED on a plastic substrate, and a layer having a smaller stress than the barrier films between the barrier films. (Stress relaxation film) is provided. In this specification, a film in which a barrier film and a stress relaxation film are stacked is referred to as a sealing film.
[0015]
Specifically, two or more barrier films made of an inorganic material (hereinafter referred to as a barrier film) are provided, and a stress relaxation film (hereinafter referred to as a stress relaxation film) having a resin between the two barrier films. Is provided. Then, an OLED is formed and sealed on the three or more insulating films to form a light emitting device.
[0016]
In the present invention, by laminating a plurality of barrier films, even if a crack occurs in the barrier film, it is possible to effectively prevent moisture and oxygen from entering the organic light emitting layer in other barrier films. Furthermore, even if the film quality of the barrier film may deteriorate due to the low film formation temperature, it is possible to effectively prevent moisture and oxygen from being mixed into the organic light emitting layer by stacking a plurality of barrier films. Can do.
[0017]
Moreover, the stress of the whole sealing film can be relieved by sandwiching a stress relaxation film having a smaller stress than that of the barrier film between the barrier films. Therefore, even if the total thickness of the barrier film is the same, the barrier film with the stress relaxation film interposed therebetween is less prone to cracking due to stress, compared to a single barrier film.
[0018]
Therefore, even if the total thickness of the barrier film is the same as that of a single barrier film, it is possible to effectively prevent moisture and oxygen from being mixed into the organic light emitting layer, and further, cracks due to stress can be prevented. Is difficult to enter.
[0019]
Further, the lamination of the barrier film and the stress relaxation film makes it more flexible and can prevent cracks when bent.
[0020]
Furthermore, in the present invention, even in a film for sealing the OLED formed on the substrate (hereinafter referred to as a sealing film), it is possible to effectively prevent moisture and oxygen from being mixed into the organic light emitting layer by adopting the above configuration. In addition, cracks when the substrate is bent can be prevented, and a more flexible light-emitting device can be realized.
[0021]
DETAILED DESCRIPTION OF THE INVENTION
Embodiments of the present invention will be described below. 1 to 4 are cross-sectional views illustrating manufacturing steps in the pixel portion and the driver circuit.
[0022]
(Embodiment 1)
In FIG. 1A, a first adhesive layer 102 made of an amorphous silicon film is formed with a thickness of 100 to 500 nm (300 nm in this embodiment) over a first substrate 101. Although a glass substrate is used as the first substrate 101 in this embodiment mode, a quartz substrate, a silicon substrate, a metal substrate, or a ceramic substrate may be used. The first substrate 101 may be a material that can withstand a processing temperature in a later manufacturing process.
[0023]
Further, the first adhesive layer 102 may be formed by using a low pressure thermal CVD method, a plasma CVD method, a sputtering method, or an evaporation method. An insulating film 103 made of a silicon oxide film is formed on the first adhesive layer 102 to a thickness of 200 nm. The insulating film 103 may be formed by a low pressure thermal CVD method, a plasma CVD method, a sputtering method, or an evaporation method. The insulating film 103 has an effect of protecting an element formed on the first substrate 101 when the first adhesive layer 102 is removed and the first substrate 101 is peeled off.
[0024]
Next, an element is formed over the insulating film 103 (FIG. 1B). Here, the element refers to a semiconductor element (typically a TFT) or an MIM element, an OLED, or the like used as a switching element of a pixel in the case of an active matrix light emitting device. A passive light-emitting device refers to an OLED. In FIG. 1B, the TFT 104a of the driver circuit 106, the TFTs 104b and 104c of the pixel portion, and the OLED 105 are shown as typical elements.
[0025]
Then, an insulating film 108 is formed so as to cover these elements. The insulating film 108 preferably has a flatter surface after film formation. Note that the insulating film 108 is not necessarily provided.
[0026]
Next, as illustrated in FIG. 1C, the second substrate 110 is bonded to the second adhesive layer 109. In this embodiment, a plastic substrate is used as the second substrate 110. Specifically, a resin substrate having a thickness of 10 μm or more, for example, PES (polyether sulfone), PC (polycarbonate), PET (polyethylene terephthalate), or PEN (polyethylene naphthalate) can be used as the second substrate.
[0027]
Further, as the second adhesive layer 109, it is necessary to use a material that can have a selection ratio when the first adhesive layer 102 is removed later. Typically, an insulating film made of a resin can be used, and polyimide is used in this embodiment mode, but acrylic, polyamide, or epoxy resin may be used. In addition, when it is located on the observer side (the user side of the light emitting device) when viewed from the OLED, it is necessary to be a material that transmits light.
[0028]
Further, in this embodiment, two or more barrier films are provided over the second substrate 110, and a stress relaxation film is further provided between the two barrier films. As a result, a sealing film in which the barrier film and the stress relaxation film are stacked is formed between the second substrate 110 and the second adhesive layer 109.
[0029]
For example, in this embodiment, as the barrier film 111a, a film made of silicon nitride is formed by sputtering on the second substrate 110, and a stress relaxation film 111b having polyimide is formed on the barrier film 111a. A film made of silicon nitride is formed as a barrier film 111c on the relaxing film 111b by sputtering. A film in which the barrier film 111a, the stress relaxation film 111b, and the barrier film 111c are stacked is collectively referred to as a sealing film 111. Then, the second substrate 110 on which the sealing film 111 is formed is attached to an element formed on the first substrate using the second adhesive layer 109.
[0030]
Note that two or more barrier films may be provided. As the barrier film, silicon nitride, silicon nitride oxide, aluminum oxide, aluminum nitride, aluminum nitride oxide, or aluminum nitride oxide silicide (AlSiON) can be used.
[0031]
Since aluminum nitride oxide silicide has a relatively high thermal conductivity, the heat generated in the element can be efficiently dissipated by using it for the barrier film.
[0032]
For the stress relaxation film, a light-transmitting resin can be used. Typically, polyimide, acrylic, polyamide, polyimide amide, benzocyclobutene, epoxy resin, or the like can be used. Resins other than those described above can also be used. Here, it is formed by applying a thermal polymerization type polyimide and baking it.
[0033]
Silicon nitride is formed by introducing argon, maintaining the substrate temperature at 150 ° C., and a sputtering pressure of about 0.4 Pa. Then, silicon was used as a target, and film formation was performed by introducing nitrogen and hydrogen in addition to argon. In the case of silicon nitride oxide, argon is introduced, the substrate temperature is kept at 150 ° C., and film formation is performed at a sputtering pressure of about 0.4 Pa. Then, silicon was used as a target, and a film was formed by introducing nitrogen, nitric oxide and hydrogen in addition to argon. Note that silicon oxide may be used as a target.
[0034]
The film thickness of the barrier film is desirably in the range of 50 nm to 3 μm. In this embodiment mode, silicon nitride is formed to a thickness of 1 μm.
[0035]
Note that the method for forming the barrier film is not limited to sputtering, but can be set as appropriate by the practitioner. For example, the film may be formed using an LPCVD method, a plasma CVD method, or the like.
[0036]
The thickness of the stress relaxation film is desirably in the range of 200 nm to 2 μm. In this embodiment mode, a polyimide film having a thickness of 1 μm is formed.
[0037]
Note that the barrier film 111a, the stress relaxation film 111b, and the barrier film 111c need to be made of a material having a selection ratio when the first adhesive layer 102 is removed later.
[0038]
By performing the process of FIG. 1A, the OLED can be completely shielded from the atmosphere. Thereby, deterioration of the organic light emitting material due to oxidation can be suppressed almost completely, and the reliability of the OLED can be greatly improved.
[0039]
Next, as shown in FIG. 2A, the first substrate 101, the second substrate 110, and all elements and the entire film formed between the first substrate 101 and the second substrate 110 are made of halogen fluoride. The first adhesive layer 102 is removed by exposure to a gas that contains it. In this embodiment, chlorine trifluoride (ClF) is used as halogen fluoride. _Three ) And nitrogen as the diluent gas. Argon, helium, or neon may be used as the dilution gas. Both flow rates were 500 sccm (8.35 × 10 ^-6 m ^Three / S), and the reaction pressure is 1 to 10 Torr (1.3 × 10 6). ² ~ 1.3 × 10 ^Three Pa). The processing temperature may be room temperature (typically 20 to 27 ° C.).
[0040]
In this case, the silicon film is etched, but the plastic film, glass substrate, polyimide film, and silicon oxide film are not etched. That is, the first adhesive layer 102 is selectively etched by being exposed to chlorine trifluoride gas, and finally removed completely. Note that the active layer of the TFT, which is also formed of a silicon film, is not exposed on the surface, so that it is not exposed to chlorine trifluoride gas and is not etched.
[0041]
In the case of the present embodiment, the first adhesive layer 102 is gradually etched from the exposed end portion, and when the first adhesive layer 102 is completely removed, the first substrate 101 and the insulating film 103 are separated. At this time, the TFT and the OLED are formed by laminating thin films, but remain in a form transferred to the second substrate 110.
[0042]
Here, the first adhesive layer 102 is etched from the end portion. However, when the first substrate 101 becomes large, it takes a long time until it is completely removed, which is not preferable. Therefore, it is desirable to implement this embodiment when the first substrate 101 is 3 inches diagonal or less (preferably 1 inch diagonal or less).
[0043]
When the first substrate 101 is peeled in this way, as shown in FIG. 2B, a third adhesive layer 113 is formed, and the third substrate 112 is attached. In this embodiment, a plastic substrate is used as the third substrate 110. Specifically, a resin substrate having a thickness of 10 μm or more, for example, PES (polyether sulfone), PC (polycarbonate), PET (polyethylene terephthalate), or PEN (polyethylene naphthalate) can be used as the third substrate.
[0044]
As the third adhesive layer 113, an insulating film made of resin (typically polyimide, acrylic, polyamide, or epoxy resin) can be used. In addition, when it is located on the observer side as viewed from the OLED, it is necessary to be a material that transmits light.
[0045]
Note that in this embodiment mode, two or more barrier films are provided over the third substrate 112, and a stress relaxation film is provided between the two barrier films. As a result, a sealing film in which the barrier film and the stress relaxation film are stacked is formed between the second substrate 112 and the third adhesive layer 113.
[0046]
For example, in the present embodiment, a film made of silicon nitride is formed as a barrier film 114a on the third substrate 110 by sputtering, and a stress relaxation film 114b including polyimide is formed on the barrier film 114a, and stress is applied. A film made of silicon nitride is formed as a barrier film 114c on the relaxing film 114b by sputtering. A film in which the barrier film 114a, the stress relaxation film 114b, and the barrier film 114c are stacked is collectively referred to as a sealing film 114. Then, the third substrate 112 on which the sealing film 114 is formed is bonded to an element fixed on the second substrate 110 using the third adhesive layer 113.
[0047]
Note that two or more barrier films may be provided. As the barrier film, silicon nitride, silicon nitride oxide, aluminum oxide, aluminum nitride, aluminum nitride oxide, or aluminum nitride oxide silicide (AlSiON) can be used.
[0048]
Since aluminum nitride oxide silicide has a relatively high thermal conductivity, the heat generated in the element can be efficiently dissipated by using it for the barrier film.
[0049]
For the stress relaxation film, a light-transmitting resin can be used. Typically, polyimide, acrylic, polyamide, polyimide amide, benzocyclobutene, epoxy resin, or the like can be used. Here, it is formed by applying a thermal polymerization type polyimide and baking it.
[0050]
Silicon nitride is formed by introducing argon, maintaining the substrate temperature at 150 ° C., and a sputtering pressure of about 0.4 Pa. Then, silicon was used as a target, and film formation was performed by introducing nitrogen and hydrogen in addition to argon. In the case of silicon nitride oxide, argon is introduced, the substrate temperature is kept at 150 ° C., and film formation is performed at a sputtering pressure of about 0.4 Pa. Then, silicon was used as a target, and a film was formed by introducing nitrogen, nitric oxide and hydrogen in addition to argon. Note that silicon oxide may be used as a target.
[0051]
The film thickness of the barrier film is desirably in the range of 50 nm to 3 μm. In this embodiment mode, silicon nitride is formed to a thickness of 1 μm.
[0052]
Note that the method for forming the barrier film is not limited to sputtering, but can be set as appropriate by the practitioner. For example, the film may be formed using an LPCVD method, a plasma CVD method, or the like.
[0053]
The thickness of the stress relaxation film is desirably in the range of 200 nm to 2 μm. In this embodiment mode, a polyimide film having a thickness of 1 μm is formed.
[0054]
Thus, a flexible light-emitting device sandwiched between two flexible substrates 110 and 112 can be obtained. Note that, when the second substrate 110 and the third substrate 112 are made of the same material, the thermal expansion coefficients are equal, and therefore, the second substrate 110 and the third substrate 112 can be made less susceptible to the effects of stress strain due to temperature changes.
[0055]
The light-emitting device manufactured in accordance with this embodiment mode has extremely high performance because an element (for example, TFT) using a semiconductor can be formed without being limited by the heat resistance of the plastic substrate. Can do.
[0056]
Note that in this embodiment mode, amorphous silicon is used as the first adhesive layer 102 and the first adhesive layer 102 is removed with a gas containing halogen fluoride; however, the present invention is not limited to this structure. The practitioner can set the material of the first adhesive layer and how to remove it. The first adhesive layer is arranged so that the substrate, the element, and the film that are not intended to be removed other than the first adhesive layer are removed together with the first adhesive layer so that the operation of the light emitting device is not hindered. It is important to set the material and how to remove it. In addition, it is important that the material of the first adhesive layer is a material that is not removed in processes other than the step of removing the first adhesive layer.
[0057]
For example, as the first adhesive layer, an organic material that is vaporized in whole or in part by the laser beam to be irradiated may be used. In addition, when the first adhesive layer has a characteristic of absorbing laser light, for example, when using the second harmonic of a YAG laser, in order to efficiently absorb the laser light only in the first adhesive layer, colored or black It is desirable to use a material (for example, a resin material containing a black colorant). However, the first adhesive layer is a layer that is not vaporized by heat treatment in the element formation step.
[0058]
The first, second, or third adhesive layer may be a single layer or a laminated layer, and an amorphous silicon film or a DLC film may be provided between the adhesive layer and the substrate.
[0059]
Alternatively, the first adhesive layer may be formed of an amorphous silicon film, and the first substrate may be peeled off by irradiating the first adhesive layer with laser light in a later step. In this case, in order to easily peel off the first substrate, it is preferable to use an amorphous silicon film containing a large amount of hydrogen. Since the hydrogen contained in the amorphous silicon film is vaporized by irradiating the laser beam, the first substrate is easily peeled off.
[0060]
Laser light includes pulse oscillation type or continuous emission type excimer laser, YAG laser, YVO _Four A laser can be used. Laser light is applied to the first adhesive layer through the first substrate to vaporize only the first adhesive layer, and the first substrate is peeled off. Therefore, a substrate through which at least the laser beam to be irradiated passes, typically a light-transmitting substrate, such as a glass substrate or a quartz substrate, is used as the first substrate, and the thickness is larger than those of the second and third substrates. Thick ones are preferred.
[0061]
In the present invention, since the laser light passes through the first substrate, it is necessary to appropriately select the type of the laser light and the first substrate. For example, if a quartz substrate is used as the first substrate, a YAG laser (fundamental wave (1064 nm), second harmonic (532 nm), third harmonic (355 nm), fourth harmonic (266 nm) or excimer laser ( In this case, the excimer laser does not pass through the glass substrate, so if the glass substrate is used as the first substrate, the basics of the YAG laser can be obtained. A linear beam may be formed using a wave, a second harmonic, or a third harmonic, preferably using a second harmonic (wavelength 532 nm), and allowed to pass through the glass substrate.
[0062]
Further, for example, a method (typically, a water jet method) for separating the first substrate by spraying a fluid (a liquid or a gas under pressure) onto the first adhesive layer may be used.
[0063]
Moreover, when the first adhesive layer is formed of an amorphous silicon film, the first adhesive layer may be removed using hydrazine.
[0064]
Further, for example, a method of separating the first substrate by etching described in JP-A-8-288522 may be used. Specifically, a coated silicon oxide film (SOG) may be used for the first adhesive layer and removed using hydrogen fluoride. In this case, it is important that the silicon oxide film that is not intended to be removed is a dense film using sputtering or a CVD method so that the selectivity when removing the first adhesive layer with hydrogen fluoride can be obtained. It is.
[0065]
By adopting such a configuration, the second and third substrates are very thin, specifically, even if a substrate having a thickness of 50 μm to 300 μm, preferably 150 μm to 200 μm is used, the reliability is high. A light emitting device can be obtained. In addition, it was difficult to form elements on such a thin substrate using a known manufacturing apparatus, but the present invention performs element formation by bonding to the first substrate. A manufacturing apparatus using a thin substrate can be used without modifying the apparatus.
[0066]
In addition, by using a sealing film formed of a multilayer insulating film, deterioration due to permeation of moisture and oxygen can be more effectively suppressed. In addition, it is possible to realize a more flexible light-emitting device by preventing cracks when the substrate is bent.
[0067]
(Embodiment 2)
Next, an embodiment of the present invention that is different from the first embodiment of the present invention will be described.
[0068]
In FIG. 3A, a first adhesive layer 202 made of an amorphous silicon film is formed with a thickness of 100 to 500 nm (300 nm in this embodiment) over a first substrate 201. Although a glass substrate is used as the first substrate 201 in this embodiment mode, a quartz substrate, a silicon substrate, a metal substrate, or a ceramic substrate may be used. The first substrate 201 may be a material that can withstand a processing temperature in a later manufacturing process.
[0069]
The first adhesive layer 202 may be formed by using a low pressure thermal CVD method, a plasma CVD method, a sputtering method, or an evaporation method. An insulating film 203 made of a silicon oxide film is formed on the first adhesive layer 202 to a thickness of 200 nm. The insulating film 203 may be formed by a low pressure thermal CVD method, a plasma CVD method, a sputtering method, or an evaporation method. The insulating film 203 has an effect of protecting the element formed on the first substrate 201 when the first adhesive layer 202 is removed and the first substrate 201 is peeled off.
[0070]
Next, an element is formed over the insulating film 203 (FIG. 3B). Here, the element refers to a semiconductor element (typically a TFT) or an MIM element, an OLED, or the like used as a switching element of a pixel in the case of an active matrix light emitting device. A passive light-emitting device refers to an OLED. In FIG. 3B, the TFT 204a of the driver circuit 206, the TFTs 204b and 204c of the pixel portion, and the OLED 205 are shown as typical elements.
[0071]
Then, an insulating film 208 is formed so as to cover these elements. The insulating film 208 preferably has a flatter surface after film formation. Note that the insulating film 208 is not necessarily provided.
[0072]
Next, as illustrated in FIG. 3C, the second substrate 210 is bonded to the second adhesive layer 209. Although a glass substrate is used as the second substrate 210 in this embodiment mode, a quartz substrate, a silicon substrate, a metal substrate, or a ceramic substrate may be used. The second substrate 210 may be a material that can withstand a processing temperature in a later manufacturing process.
[0073]
As the second adhesive layer 209, it is necessary to use a material that can have a selection ratio when the first adhesive layer 202 is removed later. Further, it is necessary that the third adhesive layer for bonding the third substrate is a material that is removed together with the second adhesive layer and does not peel off the third substrate. In this embodiment, a polyamic acid solution which is a polyimide resin precursor described in JP-A-5-315630 is used. Specifically, after forming a polyamic acid solution, which is an uncured resin, as a second adhesive layer 209 with a thickness of 10 to 15 μm, the second substrate 210 and the interlayer insulating film 208 are bonded together by thermocompression bonding. And temporary hardening is performed by heating.
[0074]
In the present embodiment, the material of the second adhesive layer is not limited to the polyamic acid solution. A material that can be selected at the time of removing the first adhesive layer 202 later, and the third adhesive layer for bonding the third substrate is removed together with the second adhesive layer, and the third substrate is peeled off. Any material that does not have to be used. Moreover, it is important that the material is not removed in steps other than the step of removing the second adhesive layer.
[0075]
Next, as illustrated in FIG. 3D, the first substrate 201, the second substrate 210, and all elements and films formed between the first substrate 201 and the second substrate 210 are made of halogen fluoride. The first adhesive layer 202 is removed by exposing it to a gas containing it. In this embodiment, chlorine trifluoride (ClF) is used as halogen fluoride. _Three ) And nitrogen as the diluent gas. Argon, helium, or neon may be used as the dilution gas. Both flow rates were 500 sccm (8.35 × 10 ^-6 m ^Three / S), and the reaction pressure is 1 to 10 Torr (1.3 × 10 6). ² ~ 1.3 × 10 ^Three Pa). The processing temperature may be room temperature (typically 20 to 27 ° C.).
[0076]
In this case, the silicon film is etched, but the plastic film, glass substrate, polyimide film, and silicon oxide film are not etched. That is, the first adhesive layer 202 is selectively etched by being exposed to chlorine trifluoride gas and finally completely removed. Note that the active layer of the TFT, which is also formed of a silicon film, is not exposed on the surface, so that it is not exposed to chlorine trifluoride gas and is not etched.
[0077]
In the case of the present embodiment, the first adhesive layer 202 is gradually etched from the exposed end portion, and the first substrate 201 and the insulating film 203 are separated when completely removed. At this time, the TFT and the OLED are formed by laminating thin films, but remain in a form transferred to the second substrate 210.
[0078]
Here, the first adhesive layer 202 is etched from the end portion. However, when the first substrate 201 is large, it takes a long time to be completely removed, which is not preferable. Therefore, it is desirable to implement this embodiment when the first substrate 201 has a diagonal of 3 inches or less (preferably a diagonal of 1 inch or less).
[0079]
After the first substrate 201 is peeled in this way, as shown in FIG. 4A, a third adhesive layer 213 is formed and the third substrate 212 is attached. In this embodiment, a plastic substrate is used as the third substrate 210. Specifically, a resin substrate having a thickness of 10 μm or more, for example, PES (polyether sulfone), PC (polycarbonate), PET (polyethylene terephthalate), or PEN (polyethylene naphthalate) can be used as the third substrate.
[0080]
As the third adhesive layer 213, an insulating film made of resin (typically polyimide, acrylic, polyamide, or epoxy resin) can be used. In addition, when it is located on the observer side as viewed from the OLED, it is necessary to be a material that transmits light.
[0081]
Note that in this embodiment mode, two or more barrier films are provided over the third substrate 212, and a stress relaxation film is further provided between the two barrier films. As a result, a sealing film in which the barrier film and the stress relaxation film are stacked is formed between the third substrate 212 and the third adhesive layer 213.
[0082]
For example, in this embodiment, as the barrier film 214a, a film made of silicon nitride is formed by sputtering on the third substrate 212, and a stress relaxation film 214b having polyimide is formed on the barrier film 214a. A film made of silicon nitride is formed as a barrier film 214c on the relaxing film 214b by sputtering. A film in which the barrier film 214a, the stress relaxation film 214b, and the barrier film 214c are stacked is collectively referred to as a sealing film 214. Then, the third substrate 212 on which the sealing film 214 is formed is bonded to an element fixed on the second substrate 210 by using the third adhesive layer 213.
[0083]
Note that two or more barrier films may be provided. As the barrier film, silicon nitride, silicon nitride oxide, aluminum oxide, aluminum nitride, aluminum nitride oxide, or aluminum nitride oxide silicide (AlSiON) can be used.
[0084]
Since aluminum nitride oxide silicide has a relatively high thermal conductivity, the heat generated in the element can be efficiently dissipated by using it for the barrier film.
[0085]
For the stress relaxation film, a light-transmitting resin can be used. Typically, polyimide, acrylic, polyamide, polyimide amide, benzocyclobutene, epoxy resin, or the like can be used. Here, it is formed by baking after applying acrylic.
[0086]
Silicon nitride is formed by introducing argon, maintaining the substrate temperature at 150 ° C., and a sputtering pressure of about 0.4 Pa. Then, silicon was used as a target, and film formation was performed by introducing nitrogen and hydrogen in addition to argon. In the case of silicon nitride oxide, argon is introduced, the substrate temperature is kept at 150 ° C., and film formation is performed at a sputtering pressure of about 0.4 Pa. Then, silicon was used as a target, and a film was formed by introducing nitrogen, nitric oxide and hydrogen in addition to argon. Note that silicon oxide may be used as a target.
[0087]
The film thickness of the barrier film is desirably in the range of 50 nm to 3 μm. In this embodiment mode, silicon nitride is formed to a thickness of 1 μm.
[0088]
Note that the method for forming the barrier film is not limited to sputtering, but can be set as appropriate by the practitioner. For example, the film may be formed using an LPCVD method, a plasma CVD method, or the like.
[0089]
The thickness of the stress relaxation film is desirably in the range of 200 nm to 2 μm. In this embodiment mode, an acrylic film with a thickness of 1 μm is formed.
[0090]
Next, as shown in FIG. 4B, the second substrate 210 is peeled off by removing the second adhesive layer 209. Specifically, the second adhesive layer 209 is removed by immersing in water for about 1 hour, and the second substrate 210 can be peeled off.
[0091]
It is important that the second adhesive layer 209 is peeled off depending on the material of the second adhesive layer, the material of the element or film, the material of the substrate, and the like.
[0092]
Next, as shown in FIG. 4C, two or more barrier films are provided on the side where the second substrate 210 is peeled, in other words, on the side opposite to the third substrate with the OLED in between. Further, a stress relaxation film is provided between the two barrier films.
[0093]
For example, in this embodiment, a film made of silicon nitride is formed as a barrier film 215a on the opposite side of the insulating film 208 from the second substrate 210 by sputtering, and stress having polyimide on the barrier film 215a is formed. A relaxation film 215b is formed, and a film made of silicon nitride is formed as a barrier film 215c on the stress relaxation film 215b by sputtering. A film in which the barrier film 215a, the stress relaxation film 215b, and the barrier film 215c are stacked is collectively referred to as a sealing film 215.
[0094]
Note that two or more barrier films may be provided. As the barrier film, silicon nitride, silicon nitride oxide, aluminum oxide, aluminum nitride, aluminum nitride oxide, or aluminum nitride oxide silicide (AlSiON) can be used.
[0095]
Since aluminum nitride oxide silicide has a relatively high thermal conductivity, the heat generated in the element can be efficiently dissipated by using it for the barrier film.
[0096]
For the stress relaxation film, a light-transmitting resin can be used. Typically, polyimide, acrylic, polyamide, polyimide amide, benzocyclobutene, epoxy resin, or the like can be used. Here, it is formed by baking after applying acrylic.
[0097]
Silicon nitride is formed by introducing argon, maintaining the substrate temperature at 150 ° C., and a sputtering pressure of about 0.4 Pa. Then, silicon was used as a target, and film formation was performed by introducing nitrogen and hydrogen in addition to argon. In the case of silicon nitride oxide, argon is introduced, the substrate temperature is kept at 150 ° C., and film formation is performed at a sputtering pressure of about 0.4 Pa. Then, silicon was used as a target, and a film was formed by introducing nitrogen, nitric oxide and hydrogen in addition to argon. Note that silicon oxide may be used as a target.
[0098]
The film thickness of the barrier film is desirably in the range of 50 nm to 3 μm. In this embodiment mode, silicon nitride is formed to a thickness of 1 μm.
[0099]
Note that the method for forming the barrier film is not limited to sputtering, but can be set as appropriate by the practitioner. For example, the film may be formed using an LPCVD method, a plasma CVD method, or the like.
[0100]
The thickness of the stress relaxation film is desirably in the range of 200 nm to 2 μm. In this embodiment mode, an acrylic film with a thickness of 1 μm is formed.
[0101]
Thus, a flexible light-emitting device using a single plastic substrate 212 can be obtained.
[0102]
The light-emitting device manufactured in accordance with this embodiment mode has extremely high performance because an element (for example, TFT) using a semiconductor can be formed without being limited by the heat resistance of the plastic substrate. Can do.
[0103]
Note that in this embodiment mode, amorphous silicon is used as the first adhesive layer 202 and the first adhesive layer 202 is removed with a gas containing halogen fluoride; however, the present invention is not limited to this structure. The practitioner can set the material of the first adhesive layer and how to remove it. Other than the first adhesive layer, the substrate that is not intended to be removed, other adhesive layers, elements, and films are removed together with the first adhesive layer so that the operation of the light emitting device is not hindered. It is important to set the material of the first adhesive layer and how to remove it. In addition, it is important that the material of the first adhesive layer is a material that is not removed in processes other than the step of removing the first adhesive layer.
[0104]
In this embodiment, a polyamic acid solution that is a polyimide resin precursor is used as the second adhesive layer 209, and the second adhesive layer 209 is removed with water. However, the present invention is not limited to this configuration. . The practitioner can set the material of the second adhesive layer and how to remove it. Other than the second adhesive layer, the substrate that is not intended to be removed, other adhesive layers, elements, and films are removed together with the second adhesive layer so that the operation of the light emitting device is not hindered. It is important to set the material of the second adhesive layer and how to remove it. In addition, it is important that the material of the second adhesive layer is a material that is not removed in processes other than the step of removing the second adhesive layer.
[0105]
For example, as the first or second adhesive layer, an organic material that is vaporized in whole or in part by the irradiated laser light may be used. In addition, when the first or second adhesive layer has a characteristic of absorbing laser light, for example, when using the second harmonic of a YAG laser, the laser light is efficiently absorbed only by the first or second adhesive layer. In addition, it is desirable to use a colored or black (for example, a resin material containing a black colorant). However, the first or second adhesive layer is a layer that is not vaporized by heat treatment in the element formation step.
[0106]
The first, second, or third adhesive layer may be a single layer or a laminated layer, and an amorphous silicon film or a DLC film may be provided between the adhesive layer and the substrate.
[0107]
Alternatively, the first or second adhesive layer may be formed of an amorphous silicon film, and the substrate may be peeled off by irradiating the first or second adhesive layer with laser light in a later step. In this case, in order to easily peel off the substrate, it is preferable to use an amorphous silicon film containing a large amount of hydrogen. Irradiation with laser light vaporizes hydrogen contained in the amorphous silicon film, so that the substrate is easily peeled off.
[0108]
Laser light includes pulse oscillation type or continuous emission type excimer laser, YAG laser, YVO _Four A laser can be used. When peeling the first substrate, laser light is passed through the first substrate to irradiate the first adhesive layer to vaporize only the first adhesive layer and peel the first substrate. When peeling off the second substrate, the second substrate is peeled off by irradiating the second adhesive layer with laser light passing through the second substrate to vaporize only the second adhesive layer. Therefore, as the first or second substrate, a substrate through which at least the laser beam to be irradiated passes, typically a light-transmitting substrate, such as a glass substrate or a quartz substrate, is used, and the thickness is larger than that of the third substrate. A thicker one is preferred.
[0109]
In the present invention, since the laser beam passes through the first or second substrate, it is necessary to appropriately select the type of the laser beam and the type of the substrate. For example, if a quartz substrate is used, a YAG laser (fundamental wave (1064 nm), second harmonic (532 nm), third harmonic (355 nm), fourth harmonic (266 nm) or excimer laser (wavelength 308 nm) is used. The excimer laser does not pass through the glass substrate, so if a glass substrate is used, the fundamental wave, the second harmonic, or the YAG laser may be used. A linear beam may be formed using the third harmonic, preferably using the second harmonic (wavelength 532 nm), and allowed to pass through the glass substrate.
[0110]
Further, for example, a method (typically, a water jet method) for separating the substrate by spraying a fluid (a liquid or a gas under pressure) onto the adhesive layer may be used.
[0111]
Further, when the adhesive layer is formed of an amorphous silicon film, the adhesive layer may be removed using hydrazine.
[0112]
Further, for example, a method of separating the first substrate by etching described in JP-A-8-288522 may be used. Specifically, a coated silicon oxide film (SOG) may be used for the first or second adhesive layer and removed using hydrogen fluoride. In this case, the silicon oxide film that is not intended to be removed is made a dense film by sputtering or CVD so that the selectivity when removing the first or second adhesive layer with hydrogen fluoride can be obtained. It is important.
[0113]
With such a structure, a highly reliable light-emitting device can be obtained even when a third substrate is very thin, specifically, a substrate having a thickness of 50 μm to 300 μm, preferably 150 μm to 200 μm. Obtainable. In addition, although it has been difficult to form elements on such a thin substrate using a known manufacturing apparatus, the present invention forms elements by bonding them to the first substrate and the second substrate. Therefore, a manufacturing apparatus using a thin substrate can be used without modifying the apparatus.
[0114]
In addition, by using a sealing film formed of a multilayer insulating film, deterioration due to permeation of moisture and oxygen can be more effectively suppressed. In addition, it is possible to realize a more flexible light-emitting device by preventing cracks when the substrate is bent.
[0115]
Note that in Embodiments 1 and 2, the anode of the OLED may be used as the pixel electrode, or the cathode may be used as the pixel electrode.
[0116]
【Example】
Examples of the present invention will be described below.
[0117]
Example 1
In this embodiment, an appearance of a light emitting device of the present invention and connection with an FPC will be described.
[0118]
FIG. 5A illustrates an example of an external view of the light-emitting device of the present invention described in Embodiment Mode 1. 301 is a second substrate and 302 is a third substrate, both of which are flexible plastic substrates. A pixel portion 303 and a driver circuit (a source side driver circuit 304 and a gate side driver circuit 305) are provided between the second substrate 301 and the third substrate 302.
[0119]
Note that FIG. 5A illustrates an example in which the source side driver circuit 304 and the gate side driver circuit 305 are formed over the same substrate as the pixel portion 303; however, the source side driver circuit 304 and the gate side driver circuit 305 are illustrated. A driver circuit typified by the above may be formed on a different substrate from the pixel portion and connected via an FPC or the like.
[0120]
The number and arrangement of the source side driver circuits 304 and the gate side driver circuits 305 are not limited to the structure illustrated in FIG.
[0121]
Reference numeral 306 denotes an FPC, and a signal and a power supply voltage from an IC including a controller are supplied to the pixel portion 303, the source side driver circuit 304, and the gate side driver circuit 305 via the FPC 306.
[0122]
An enlarged view of a portion surrounded by a dotted line where the FPC 306 and the second substrate 301 are connected as shown in FIG. 5A is shown in FIG. FIG. 5C is a cross-sectional view taken along a line AA ′ in FIG.
[0123]
Between the second substrate 301 and the third substrate 302, a wiring 310 led to supply a signal and a power supply voltage to the pixel portion 303, the source side driver circuit 304, and the gate side driver circuit 305 is provided. It has been. The FPC 306 is provided with a terminal 311.
[0124]
A contact hole 313 is formed by removing a part of the second substrate 301 and various films such as a sealing film and an insulating film provided between the second substrate 301 and the lead wiring 310 by a laser or the like. It has been. Therefore, the plurality of lead wires 310 are exposed in the contact holes 313 and are electrically connected to the terminals 311 by the conductive resin 312 having anisotropy, respectively.
[0125]
In addition, although FIG. 5 demonstrated the example which exposes a part of wiring extended from the 2nd board | substrate side, this invention is not limited to this. A part of the wiring routed from the third substrate side may be exposed.
[0126]
FIG. 6A illustrates a state in which the light-emitting device illustrated in FIG. 5A is bent. In the light-emitting device described in Embodiment 1, since the second substrate and the third substrate are both flexible, as shown in FIG. 6A, the light-emitting device can be bent to some extent. . Therefore, it can be used for a display having a curved surface, a show window, and the like, and its application range is very wide. Note that the light-emitting device described in Embodiment 2 is not limited to the light-emitting device described in Embodiment 1 and can be bent in the same manner.
[0127]
FIG. 6B is a cross-sectional view of the light-emitting device illustrated in FIG. A plurality of elements are formed between the second substrate 301 and the third substrate 302. Here, the TFTs 303a, 303b, and 303c and the OLED 304 are typically shown. A broken line 309 is a center line between the second substrate 301 and the third substrate 302.
[0128]
A barrier film 306a, a stress relaxation film 306b, and a barrier film 306c (collectively referred to as a sealing film 306) are provided between the second substrate 301 and the plurality of elements. In addition, a barrier film 307a, a stress relaxation film 307b, and a barrier film 307c (also collectively referred to as a sealing film 307) are provided between the third substrate 302 and the plurality of elements.
[0129]
Further, a second adhesive layer 305 is provided between the sealing film 306 and the plurality of elements. A third adhesive layer 308 is provided between the sealing film 307 and the plurality of elements.
[0130]
Next, connection of the light-emitting device described in Embodiment 2 to the FPC will be described. FIG. 7 is a cross-sectional view of a portion where the light-emitting device described in Embodiment 2 and the FPC are connected.
[0131]
On the third substrate 401, a wiring 403 for drawing is provided. A sealing film 402 is formed so as to cover the wiring 403 for drawing and a plurality of elements provided on the third substrate 401. In FIG. 7, the sealing film 402 is illustrated as a single layer film, but actually includes a plurality of barrier films and a stress relaxation film provided between the barrier films.
[0132]
Various films such as a sealing film 402 and other insulating films provided between the third substrate 401 and the lead-out wiring 410 are partially removed by a laser or the like, so that a contact hole is provided. . The lead wiring 403 is exposed in the contact hole, and is electrically connected to the terminal 405 included in the FPC 404 by the conductive resin 406 having anisotropy.
[0133]
Note that although FIG. 7 illustrates an example in which part of the wiring extended from the sealing film 402 side is exposed, the present invention is not limited to this. A part of the wiring routed from the third substrate side may be exposed.
[0134]
(Example 2)
In this example, an example of Embodiment 1 of the present invention will be described.
[0135]
In FIG. 8A, a first adhesive layer 502 made of a coated silicon oxide film (SOG) is formed on the first substrate 501 to a thickness of 100 to 500 nm (300 nm in this embodiment). In this embodiment mode, a glass substrate is used as the first substrate 501, but a quartz substrate, a silicon substrate, a metal substrate, or a ceramic substrate may be used. The first substrate 501 may be a material that can withstand a processing temperature in a later manufacturing process.
[0136]
In addition, an iodine liquid is added to the SOG solution by spin coating, and the coated silicon oxide film is dried to release iodine. Thereafter, heat treatment at about 400 ° C. is performed to form a film. In this embodiment, SOG having a thickness of 100 nm is formed. Note that the method of creating the SOG as the first adhesive layer 502 is not limited to the above method. The SOG may be an organic SOG or an inorganic SOG. Any SOG that can be removed by hydrogen fluoride in a later step may be used. It is important that the silicon oxide film that is not intended to be removed be a dense film using sputtering or a CVD method so that the selectivity when removing the first adhesive layer with hydrogen fluoride can be obtained. is there.
[0137]
Next, a protective film made of Al is formed on the first adhesive layer 502 by using a low pressure thermal CVD method, a plasma CVD method, a sputtering method, or an evaporation method. In this embodiment, a protective film 503 made of Al is formed to a thickness of 200 nm on the first adhesive layer 502 by using a sputtering method.
[0138]
In this embodiment, Al is used as the material of the protective film 503, but the present invention is not limited to this. It is important that the protective film 503 is a material that is not removed together when the first adhesive layer 502 is removed, and is a material that is not removed in a process other than the step of removing the protective film 503. is there. Furthermore, it is important that the material is such that no other film or substrate is removed in the step of removing the protective film 503. The protective film 503 has an effect of protecting the element formed on the first substrate 501 when the first adhesive layer 502 is removed and the first substrate 501 is peeled off.
[0139]
Next, an element is formed over the protective film 503 (FIG. 8B). In FIG. 8B, the TFTs 504a and 504b of the driver circuit are typically shown.
[0140]
In this embodiment, 504a is an n-channel TFT, and 504b is a p-channel TFT. The TFTs 504a and 504b form a CMOS.
[0141]
The TFT 504a includes a first electrode 550 formed on the protective film 503, an insulating film 551 formed to cover the first electrode 550, and a semiconductor film formed in contact with the insulating film 551. 552, an insulating film 553 formed in contact with the semiconductor film 552, and a second electrode 554 in contact with the insulating film 553.
[0142]
The TFT 504 b is in contact with the first electrode 560, the insulating film 551 formed so as to cover the first electrode 560, the semiconductor film 562 formed in contact with the insulating film 551, and the semiconductor film 562. And an insulating film 553 formed and a second electrode 564 in contact with the insulating film 553.
[0143]
Note that a terminal 570 which is formed at the same time as the first electrodes 550 and 560 is provided over the protective film 503.
[0144]
Further, an insulating film 565 is formed to cover the TFT 504a and the TFT 504b. Through the contact holes formed in the insulating film 565 and the insulating films 551 and 553, the wiring 571 in contact with the semiconductor film 552 and the terminal 570, the wiring 572 in contact with the semiconductor film 552 and the semiconductor film 562, and the semiconductor film A wiring 573 in contact with 562 is formed.
[0145]
An insulating film 574 is formed to cover the wiring 571, the wiring 572, the wiring 573, and the insulating film 565. An OLED (not shown) is formed on the insulating film 574.
[0146]
Then, an insulating film 508 is formed so as to cover these elements. The insulating film 508 preferably has a flatter surface after film formation. Note that the insulating film 508 is not necessarily provided.
[0147]
Next, as illustrated in FIG. 8C, the second substrate 510 is bonded to the second adhesive layer 509. In this embodiment, a plastic substrate is used as the second substrate 510. Specifically, a resin substrate having a thickness of 10 μm or more, for example, PES (polyether sulfone), PC (polycarbonate), PET (polyethylene terephthalate), or PEN (polyethylene naphthalate) can be used as the second substrate.
[0148]
Further, as the second adhesive layer 509, it is necessary to use a material having a selection ratio when the first adhesive layer 502 is removed later. Typically, an insulating film made of a resin can be used, and polyimide is used in this embodiment mode, but acrylic, polyamide, or epoxy resin may be used. In addition, when it is located on the observer side (the user side of the light emitting device) when viewed from the OLED, it is necessary to be a material that transmits light.
[0149]
Further, in this embodiment, two or more barrier films are provided over the second substrate 510, and a stress relaxation film is further provided between the two barrier films. As a result, a sealing film 511 in which the barrier film and the stress relaxation film are stacked is formed between the second substrate 510 and the second adhesive layer 509.
[0150]
For example, in this embodiment, as the barrier film 511a, a film made of silicon nitride is formed by sputtering on the second substrate 510, and a stress relaxation film 511b having polyimide is formed on the barrier film 511a. A film made of silicon nitride is formed as a barrier film 511c on the relaxing film 511b by sputtering. A film in which the barrier film 511a, the stress relaxation film 511b, and the barrier film 511c are stacked is collectively referred to as a sealing film 511. Then, the second substrate 510 over which the sealing film 511 is formed is bonded to an element formed over the first substrate using the second adhesive layer 509.
[0151]
Note that two or more barrier films may be provided. As the barrier film, silicon nitride, silicon nitride oxide, aluminum oxide, aluminum nitride, aluminum nitride oxide, or aluminum nitride oxide silicide (AlSiON) can be used.
[0152]
For the stress relaxation film, a light-transmitting resin can be used. Typically, polyimide, acrylic, polyamide, polyimide amide, benzocyclobutene, epoxy resin, or the like can be used. Here, it is formed by applying a thermal polymerization type polyimide and baking it.
[0153]
Silicon nitride is formed by introducing argon, maintaining the substrate temperature at 150 ° C., and a sputtering pressure of about 0.4 Pa. Then, silicon was used as a target, and film formation was performed by introducing nitrogen and hydrogen in addition to argon. In the case of silicon nitride oxide, argon is introduced, the substrate temperature is kept at 150 ° C., and film formation is performed at a sputtering pressure of about 0.4 Pa. Then, silicon was used as a target, and a film was formed by introducing nitrogen, nitric oxide and hydrogen in addition to argon. Note that silicon oxide may be used as a target.
[0154]
The film thickness of the barrier film is desirably in the range of 50 nm to 3 μm. In this embodiment mode, silicon nitride is formed to a thickness of 1 μm.
[0155]
Note that the method for forming the barrier film is not limited to sputtering, but can be set as appropriate by the practitioner. For example, the film may be formed using an LPCVD method, a plasma CVD method, or the like.
[0156]
The thickness of the stress relaxation film is desirably in the range of 200 nm to 2 μm. In this embodiment mode, a polyimide film having a thickness of 1 μm is formed.
[0157]
Note that the barrier film 511a, the stress relaxation film 511b, and the barrier film 511c need to use materials that can be selected when the first adhesive layer 502 is removed later.
[0158]
By performing the process of FIG. 8C, the OLED can be completely shielded from the atmosphere. Thereby, deterioration of the organic light emitting material due to oxidation can be suppressed almost completely, and the reliability of the OLED can be greatly improved.
[0159]
Next, as shown in FIG. 8D, the first adhesive layer 502 is removed using hydrogen fluoride. In this embodiment, the first substrate 501, the second substrate 510, and all elements and the entire film formed between the first substrate 501 and the second substrate 510 are buffered hydrofluoric acid (HF / NH _Four The first adhesive layer 502 is removed by dipping in F = 0.01 to 0.2, for example, 0.1).
[0160]
At this time, since the silicon oxide film not intended to be removed is formed by a dense film using sputtering or CVD, only the first adhesive layer is removed with hydrogen fluoride.
[0161]
In the present embodiment, the first adhesive layer 502 is gradually etched from the exposed end, and the first substrate 501 and the protective film 503 are separated when completely removed. At this time, the TFT and the OLED are formed by laminating thin films, but remain in a form transferred to the second substrate 510.
[0162]
Here, the first adhesive layer 502 is etched from the end. However, when the first substrate 501 is enlarged, it takes a long time to be completely removed, which is not preferable. Therefore, it is desirable to implement this embodiment when the first substrate 501 has a diagonal of 3 inches or less (preferably, a diagonal of 1 inch or less).
[0163]
Next, as shown in FIG. 9A, the protective film 503 is removed. In this embodiment, the protective film 503 made of Al is removed by wet etching using a phosphoric acid-based etching solution, and the terminals 570 and the first electrodes 550 and 560 are exposed.
[0164]
Then, as shown in FIG. 9B, a third adhesive layer 513 made of an anisotropic conductive resin is formed, and the terminal 570 and the first electrodes 550 and 560 are exposed from the third substrate 512. Paste it on the side where it is.
[0165]
In this embodiment, a plastic substrate is used as the third substrate 512. Specifically, a resin substrate having a thickness of 10 μm or more, for example, PES (polyether sulfone), PC (polycarbonate), PET (polyethylene terephthalate), or PEN (polyethylene naphthalate) can be used as the third substrate.
[0166]
As the third adhesive layer 513, an insulating film made of resin (typically polyimide, acrylic, polyamide, or epoxy resin) can be used. In addition, when it is located on the observer side as viewed from the OLED, it is necessary to be a material that transmits light.
[0167]
Note that in this embodiment mode, two or more barrier films are provided over the third substrate 512, and a stress relaxation film is further provided between the two barrier films. As a result, a sealing film in which the barrier film and the stress relaxation film are stacked is formed between the second substrate 512 and the third adhesive layer 513.
[0168]
For example, in this embodiment, a film made of silicon nitride is formed as a barrier film 514a on the third substrate 512 by sputtering, and a stress relaxation film 514b including polyimide is formed on the barrier film 514a, thereby A film made of silicon nitride is formed as a barrier film 514c on the relaxing film 514b by sputtering. A film in which the barrier film 514a, the stress relaxation film 514b, and the barrier film 514c are stacked is collectively referred to as a sealing film 514. Then, the third substrate 512 over which the sealing film 514 is formed is bonded to an element fixed on the second substrate 510 by using a third adhesive layer 513.
[0169]
Note that two or more barrier films may be provided. As the barrier film, silicon nitride, silicon nitride oxide, aluminum oxide, aluminum nitride, aluminum nitride oxide, or aluminum nitride oxide silicide (AlSiON) can be used.
[0170]
For the stress relaxation film, a light-transmitting resin can be used. Typically, polyimide, acrylic, polyamide, polyimide amide, benzocyclobutene, epoxy resin, or the like can be used. Here, it is formed by applying a thermal polymerization type polyimide and baking it.
[0171]
Silicon nitride is formed by introducing argon, maintaining the substrate temperature at 150 ° C., and a sputtering pressure of about 0.4 Pa. Then, silicon was used as a target, and film formation was performed by introducing nitrogen and hydrogen in addition to argon. In the case of silicon nitride oxide, argon is introduced, the substrate temperature is kept at 150 ° C., and film formation is performed at a sputtering pressure of about 0.4 Pa. Then, silicon was used as a target, and a film was formed by introducing nitrogen, nitric oxide and hydrogen in addition to argon. Note that silicon oxide may be used as a target.
[0172]
The film thickness of the barrier film is desirably in the range of 50 nm to 3 μm. In this embodiment mode, silicon nitride is formed to a thickness of 1 μm.
[0173]
Note that the method for forming the barrier film is not limited to sputtering, but can be set as appropriate by the practitioner. For example, the film may be formed using an LPCVD method, a plasma CVD method, or the like.
[0174]
The thickness of the stress relaxation film is desirably in the range of 200 nm to 2 μm. In this embodiment mode, a polyimide film having a thickness of 1 μm is formed.
[0175]
Then, a contact hole is formed in the third substrate 512 and the sealing film 514 with a laser or the like, and Al is vapor-deposited on a portion of the third substrate 512 where the contact hole is formed and in the periphery thereof. Terminals 580 and 581 that are electrically connected to both surfaces of 512 are formed, respectively. Note that the method of forming the terminals 580 and 581 is not limited to the above structure.
[0176]
The terminal 580 formed on the third substrate 512 is electrically connected to the terminal 570 formed at the same time as the first electrodes 550 and 560 through the third adhesive layer 513.
[0177]
Thus, a flexible light-emitting device sandwiched between the two plastic substrates 510 and 512 can be obtained. Note that, when the second substrate 510 and the third substrate 512 are made of the same material, the thermal expansion coefficients are equal to each other, so that the second substrate 510 and the third substrate 512 can be hardly affected by stress strain due to temperature change.
[0178]
9C, the terminal 581 which is not in contact with the third adhesive layer 513 and is in contact with the third substrate 512 and the terminal 591 included in the FPC 590 are made anisotropic. Connection is made through a fourth adhesive layer 592 made of conductive resin.
[0179]
The light-emitting device manufactured in accordance with this embodiment mode has extremely high performance because an element (for example, TFT) using a semiconductor can be formed without being limited by the heat resistance of the plastic substrate. Can do.
[0180]
Note that in this embodiment mode, SOG is used as the first adhesive layer 502 and the first adhesive layer 502 is removed using hydrogen fluoride; however, the present invention is not limited to this structure. The practitioner can set the material of the first adhesive layer and how to remove it. The first adhesive layer is arranged so that the substrate, the element, and the film that are not intended to be removed other than the first adhesive layer are removed together with the first adhesive layer so that the operation of the light emitting device is not hindered. It is important to set the material and how to remove it. In addition, it is important that the material of the first adhesive layer is a material that is not removed in processes other than the step of removing the first adhesive layer.
[0181]
For example, as the first adhesive layer, an organic material that is vaporized in whole or in part by the laser beam to be irradiated may be used. In addition, when the first adhesive layer has a characteristic of absorbing laser light, for example, when using the second harmonic of a YAG laser, in order to efficiently absorb the laser light only in the first adhesive layer, colored or black It is desirable to use a material (for example, a resin material containing a black colorant). However, the first adhesive layer is a layer that is not vaporized by heat treatment in the element formation step.
[0182]
The first, second, or third adhesive layer may be a single layer or a laminated layer, and an amorphous silicon film or a DLC film may be provided between the adhesive layer and the substrate.
[0183]
Alternatively, the first adhesive layer may be formed of an amorphous silicon film, and the first substrate may be peeled off by irradiating the first adhesive layer with laser light in a later step. In this case, in order to easily peel off the first substrate, it is preferable to use an amorphous silicon film containing a large amount of hydrogen. Since the hydrogen contained in the amorphous silicon film is vaporized by irradiating the laser beam, the first substrate is easily peeled off.
[0184]
Laser light includes pulse oscillation type or continuous emission type excimer laser, YAG laser, YVO _Four A laser can be used. Laser light is applied to the first adhesive layer through the first substrate to vaporize only the first adhesive layer, and the first substrate is peeled off. Therefore, a substrate through which at least the laser beam to be irradiated passes, typically a light-transmitting substrate, such as a glass substrate or a quartz substrate, is used as the first substrate, and the thickness is larger than those of the second and third substrates. Thick ones are preferred.
[0185]
In the present invention, since the laser light passes through the first substrate, it is necessary to appropriately select the type of the laser light and the first substrate. For example, if a quartz substrate is used as the first substrate, a YAG laser (fundamental wave (1064 nm), second harmonic (532 nm), third harmonic (355 nm), fourth harmonic (266 nm) or excimer laser ( In this case, the excimer laser does not pass through the glass substrate, so if the glass substrate is used as the first substrate, the basics of the YAG laser can be obtained. A linear beam may be formed using a wave, a second harmonic, or a third harmonic, preferably using a second harmonic (wavelength 532 nm), and allowed to pass through the glass substrate.
[0186]
Alternatively, a method (typically a water jet method) for separating the first substrate by spraying a fluid (a liquid or a gas under pressure) onto the first adhesive layer may be used. You may use it in combination.
[0187]
Moreover, when the first adhesive layer is formed of an amorphous silicon film, the first adhesive layer may be removed using hydrazine.
[0188]
Further, for example, a method of separating the first substrate by etching described in JP-A-8-288522 may be used. Specifically, a coated silicon oxide film (SOG) may be used for the first adhesive layer and removed using hydrogen fluoride. In this case, it is important that the silicon oxide film that is not intended to be removed is a dense film using sputtering or a CVD method so that the selectivity when removing the first adhesive layer with hydrogen fluoride can be obtained. It is.
[0189]
By adopting such a configuration, the second and third substrates are very thin, specifically, even if a substrate having a thickness of 50 μm to 300 μm, preferably 150 μm to 200 μm is used, the reliability is high. A light emitting device can be obtained. In addition, it was difficult to form elements on such a thin substrate using a known manufacturing apparatus, but the present invention performs element formation by bonding to the first substrate. A manufacturing apparatus using a thick substrate can be used without modifying the apparatus.
[0190]
In addition, by using a sealing film formed of a multilayer insulating film, deterioration due to permeation of moisture and oxygen can be more effectively suppressed. In addition, it is possible to realize a more flexible light-emitting device by preventing cracks when the substrate is bent.
[0191]
(Example 3)
In this embodiment, a method for simultaneously manufacturing TFTs of a pixel portion of a light-emitting device of the present invention and a driver circuit portion (a source signal line side driver circuit and a gate signal line side driver circuit) provided around the pixel portion will be described. However, in order to simplify the description, a CMOS circuit which is a basic unit is illustrated in the drive circuit portion.
[0192]
First, as shown in FIG. 10A, on a first substrate 5000 made of glass such as barium borosilicate glass represented by Corning # 7059 glass or # 1737 glass or aluminoborosilicate glass, A first adhesive layer 5001 made of a crystalline silicon film is formed to a thickness of 100 to 500 nm (300 nm in this embodiment). The first adhesive layer 102 may be formed by using a low pressure thermal CVD method, a plasma CVD method, a sputtering method, or an evaporation method. In this embodiment, the film was formed by using the sputtering method.
[0193]
Next, a base film 5002 made of an insulating film such as a silicon oxide film, a silicon nitride film, or a silicon oxynitride film is formed over the first adhesive layer 5001. The base film 5002 has an effect of protecting the element formed on the substrate 5000 when the first adhesive layer 5001 is removed and the substrate 5000 is peeled off. For example, SiH by plasma CVD method _Four , NH _Three , N ₂ A silicon oxynitride film made of O is formed to 10 to 200 [nm] (preferably 50 to 100 [nm]), and similarly SiH _Four , N ₂ A silicon oxynitride silicon oxynitride film formed from O is stacked to a thickness of 50 to 200 [nm] (preferably 100 to 150 [nm]). Although the base film 5002 is shown as a two-layer structure in this embodiment, it may be formed as a single-layer film of the insulating film or a structure in which two or more layers are stacked.
[0194]
The island-shaped semiconductor layers 5003 to 5006 are formed using a crystalline semiconductor film in which a semiconductor film having an amorphous structure is formed using a laser crystallization method or a known thermal crystallization method. The island-like semiconductor layers 5003 to 5006 are formed with a thickness of 25 to 80 [nm] (preferably 30 to 60 [nm]). There is no limitation on the material of the crystalline semiconductor film, but the crystalline semiconductor film is preferably formed of silicon or a silicon germanium (SiGe) alloy.
[0195]
In order to fabricate a crystalline semiconductor film by laser crystallization, a pulse oscillation type or continuous emission type excimer laser, YAG laser, YVO _Four Use a laser. When these lasers are used, it is preferable to use a method in which laser light emitted from a laser oscillator is linearly collected by an optical system and irradiated onto a semiconductor film. Crystallization conditions are appropriately selected by the practitioner. When an excimer laser is used, the pulse oscillation frequency is 300 [Hz] and the laser energy density is 100 to 400 [mJ / cm. ² ] (Typically 200-300 [mJ / cm ² ]). When using a YAG laser, the second harmonic is used and the pulse oscillation frequency is set to 30 to 300 [kHz], and the laser energy density is set to 300 to 600 [mJ / cm. ² ] (Typically 350-500 [mJ / cm ² ]) Then, a laser beam focused in a linear shape with a width of 100 to 1000 [μm], for example, 400 [μm] is irradiated over the entire surface of the substrate, and the overlay rate of the linear laser beam at this time is 50. Perform as ~ 90 [%].
[0196]
Next, a gate insulating film 5007 is formed to cover the island-shaped semiconductor layers 5003 to 5006. The gate insulating film 5007 is formed of an insulating film containing silicon with a thickness of 40 to 150 [nm] by using a plasma CVD method or a sputtering method. In this embodiment, a silicon oxynitride film is formed with a thickness of 120 [nm]. Needless to say, the gate insulating film is not limited to such a silicon oxynitride film, and another insulating film containing silicon may be used as a single layer or a stacked structure. For example, when a silicon oxide film is used, TEOS (Tetraethyl Orthosilicate) and O ₂ And a reaction pressure of 40 [Pa], a substrate temperature of 300 to 400 [° C.], a high frequency (13.56 [MHz]), and a power density of 0.5 to 0.8 [W / cm]. ² ] Can be formed by discharging. The silicon oxide film thus produced can obtain good characteristics as a gate insulating film by subsequent thermal annealing at 400 to 500 [° C.].
[0197]
Then, a first conductive film 5008 and a second conductive film 5009 for forming a gate electrode are formed over the gate insulating film 5007. In this embodiment, the first conductive film 5008 is formed with Ta to a thickness of 50 to 100 [nm], and the second conductive film 5009 is formed with W to a thickness of 100 to 300 [nm].
[0198]
The Ta film is formed by sputtering, and a Ta target is sputtered with Ar. In this case, when an appropriate amount of Xe or Kr is added to Ar, the internal stress of the Ta film can be relieved and peeling of the film can be prevented. The resistivity of the α-phase Ta film is about 20 [μΩcm] and can be used for the gate electrode, but the resistivity of the β-phase Ta film is about 180 [μΩcm] and is used as the gate electrode. It is unsuitable. In order to form an α-phase Ta film, tantalum nitride having a crystal structure close to Ta's α-phase is formed on a Ta base with a thickness of about 10 to 50 nm. It can be easily obtained.
[0199]
When forming a W film, it is formed by sputtering using W as a target. In addition, tungsten hexafluoride (WF ₆ It can also be formed by a thermal CVD method using In any case, in order to use as a gate electrode, it is necessary to reduce the resistance, and it is desirable that the resistivity of the W film be 20 [μΩcm] or less. Although the resistivity of the W film can be reduced by increasing the crystal grains, if the impurity element such as oxygen is large in W, the crystallization is hindered and the resistance is increased. From this, when sputtering is used, a W target having a purity of 99.9999 or 99.99 [%] is used, and a W film is formed with sufficient consideration so that impurities are not mixed in the gas phase during film formation. By forming, a resistivity of 9 to 20 [μΩcm] can be realized.
[0200]
Note that in this embodiment, the first conductive film 5008 is Ta and the second conductive film 5009 is W, but there is no particular limitation, and any of them is selected from Ta, W, Ti, Mo, Al, Cu, and the like. Or an alloy material or a compound material containing the element as a main component. Alternatively, a semiconductor film typified by a polycrystalline silicon film doped with an impurity element such as phosphorus may be used. As another example of a combination other than the present embodiment, a combination in which the first conductive film 5008 is formed of tantalum nitride (TaN) and the second conductive film 5009 is W is used. Is made of tantalum nitride (TaN), the second conductive film 5009 is made of Al, the first conductive film 5008 is made of tantalum nitride (TaN), and the second conductive film 5009 is made of Cu. Can be mentioned.
[0201]
Next, a resist mask 5010 is formed, and a first etching process is performed to form electrodes and wirings. In this embodiment, an ICP (Inductively Coupled Plasma) etching method is used, and CF is used as an etching gas. _Four And Cl ₂ Then, 500 [W] RF (13.56 [MHz]) power is applied to the coil-type electrode at a pressure of 1 [Pa] to generate plasma. 100 [W] RF (13.56 [MHz]) power is also applied to the substrate side (sample stage), and a substantially negative self-bias voltage is applied. CF _Four And Cl ₂ When W is mixed, the W film and the Ta film are etched to the same extent.
[0202]
Under the above etching conditions, by making the shape of the resist mask suitable, the end portions of the first conductive layer and the second conductive layer are tapered due to the effect of the bias voltage applied to the substrate side. The angle of the tapered portion is 15 to 45 °. In order to perform etching without leaving a residue on the gate insulating film, it is preferable to increase the etching time at a rate of about 10 to 20%. Since the selection ratio of the silicon oxynitride film to the W film is 2 to 4 (typically 3), the surface where the silicon oxynitride film is exposed is etched by about 20 to 50 [nm] by the overetching process. become. Thus, the first shape conductive layers 5011 to 5016 (the first conductive layers 5011a to 5016a and the second conductive layers 5011b to 5016b) formed of the first conductive layer and the second conductive layer by the first etching treatment. Form. At this time, in the gate insulating film 5007, a region which is not covered with the first shape conductive layers 5011 to 5016 is etched and thinned by about 20 to 50 [nm]. (Fig. 10 (B))
[0203]
Then, an impurity element imparting N-type is added by performing a first doping process. As a doping method, an ion doping method or an ion implantation method may be used. The condition of the ion doping method is a dose of 1 × 10 ¹³ ~ 5x10 ¹⁴ [atoms / cm ² The acceleration voltage is set to 60 to 100 [keV]. As an impurity element imparting N-type, an element belonging to Group 15, typically phosphorus (P) or arsenic (As) is used. Here, phosphorus (P) is used. In this case, the conductive layers 5011 to 5015 serve as a mask for the impurity element imparting N-type, and the first impurity regions 5017 to 5025 are formed in a self-aligning manner. The first impurity regions 5017 to 5025 have 1 × 10 ²⁰ ~ 1x10 ^{twenty one} [atoms / cm ^Three An impurity element imparting N-type is added in a concentration range of (Fig. 10 (B))
[0204]
Next, as shown in FIG. 10C, a second etching process is performed without removing the resist mask. CF as etching gas _Four And Cl ₂ And O ₂ Then, the W film is selectively etched. At this time, second shape conductive layers 5026 to 5031 (first conductive layers 5026a to 5031a and second conductive layers 5026b to 5031b) are formed by the second etching process. At this time, in the gate insulating film 5007, a region that is not covered with the second shape conductive layers 5026 to 5031 is further etched and thinned by about 20 to 50 [nm].
[0205]
CF of W film and Ta film _Four And Cl ₂ The etching reaction by the mixed gas can be estimated from the generated radical or ion species and the vapor pressure of the reaction product. Comparing the vapor pressure of fluoride and chloride of W and Ta, WF, which is fluoride of W ₆ Is extremely high, other WCl _Five , TaF _Five , TaCl _Five Are comparable. Therefore, CF _Four And Cl ₂ With this mixed gas, both the W film and the Ta film are etched. However, an appropriate amount of O is added to this mixed gas. ₂ When CF is added _Four And O ₂ Reacts to CO and F, and a large amount of F radicals or F ions are generated. As a result, the etching rate of the W film having a high fluoride vapor pressure is increased. On the other hand, the increase in etching rate of Ta is relatively small even when F increases. Further, since Ta is more easily oxidized than W, O ₂ When Ta is added, the surface of Ta is oxidized. Since the Ta oxide does not react with fluorine or chlorine, the etching rate of the Ta film further decreases. Therefore, it is possible to make a difference in the etching rate between the W film and the Ta film, and the etching rate of the W film can be made larger than that of the Ta film.
[0206]
Then, a second doping process is performed as shown in FIG. In this case, the impurity amount imparting N-type is doped as a condition of a high acceleration voltage by lowering the dose than the first doping treatment. For example, the acceleration voltage is set to 70 to 120 [keV] and 1 × 10 ¹³ [atoms / cm ² A new impurity region is formed inside the first impurity region formed in the island-shaped semiconductor layer in FIG. 10B. Doping is performed using the second shape conductive layers 5026 to 5030 as masks against the impurity elements so that the impurity elements are also added to the lower regions of the first conductive layers 5026a to 5030a. Thus, third impurity regions 5032 to 5036 are formed. The concentration of phosphorus (P) added to the third impurity regions 5032 to 5036 has a gradual concentration gradient according to the film thickness of the tapered portions of the first conductive layers 5026a to 5030a. Note that, in the semiconductor layer overlapping the tapered portions of the first conductive layers 5026a to 5030a, although the impurity concentration slightly decreases inward from the end portions of the tapered portions of the first conductive layers 5026a to 5030a, The concentration is similar.
[0207]
A third etching process is performed as shown in FIG. CHF as etching gas ₆ And using a reactive ion etching method (RIE method). By the third etching treatment, the tapered portions of the first conductive layers 5026a to 5031a are partially etched, and a region where the first conductive layer overlaps with the semiconductor layer is reduced. Through the third etching treatment, third-shaped conductive layers 5037 to 5042 (first conductive layers 5037a to 5042a and second conductive layers 5037b to 5042b) are formed. At this time, in the gate insulating film 5007, regions that are not covered with the third shape conductive layers 5037 to 5042 are further etched by about 20 to 50 [nm] to form thin regions.
[0208]
By the third etching process, in the third impurity regions 5032 to 5036, the third impurity regions 5032a to 5036a overlapping with the first conductive layers 5037a to 5041a, the first impurity region, the third impurity region, Second impurity regions 5032b to 5036b are formed.
[0209]
Then, as shown in FIG. 11C, fourth impurity regions 5043 to 5054 having a conductivity type opposite to the first conductivity type are formed in the island-like semiconductor layers 5004 and 5006 forming the P-channel TFT. . Using the third shape conductive layers 5038b and 5041b as masks against the impurity element, impurity regions are formed in a self-aligning manner. At this time, the island-shaped semiconductor layers 5003 and 5005 and the wiring portion 5042 forming the N-channel TFT are covered with the resist mask 5200 in advance. Phosphorus is added to the impurity regions 5043 to 5054 at different concentrations, but diborane (B ₂ H ₆ ), And the impurity concentration in each region is 2 × 10 ²⁰ ~ 2x10 ^{twenty one} [atoms / cm ^Three ] To be.
[0210]
Through the above steps, impurity regions are formed in each island-like semiconductor layer. The third shape conductive layers 5037 to 5041 overlapping with the island-shaped semiconductor layers function as gate electrodes. Reference numeral 5042 functions as an island-shaped source signal line.
[0211]
After removing the resist mask 5200, a process of activating the impurity element added to each island-like semiconductor layer is performed for the purpose of controlling the conductivity type. This step is performed by a thermal annealing method using a furnace annealing furnace. In addition, a laser annealing method or a rapid thermal annealing method (RTA method) can be applied. In the thermal annealing method, oxygen concentration is 1 [ppm] or less, preferably 0.1 [ppm] or less in a nitrogen atmosphere at 400 to 700 [° C.], typically 500 to 600 [° C.], In this embodiment, heat treatment is performed at 500 [° C.] for 4 hours. However, when the wiring material used for the third shape conductive layers 5037 to 5042 is weak against heat, activation is performed after an interlayer insulating film (mainly composed of silicon) is formed to protect the wiring and the like. Preferably it is done.
[0212]
Further, a heat treatment is performed at 300 to 450 [° C.] for 1 to 12 hours in an atmosphere containing 3 to 100 [%] hydrogen to perform a step of hydrogenating the island-shaped semiconductor layer. This step is a step of terminating dangling bonds in the semiconductor layer with thermally excited hydrogen. As another means of hydrogenation, plasma hydrogenation (using hydrogen excited by plasma) may be performed.
[0213]
Next, as shown in FIG. 12A, a first interlayer insulating film 5055 is formed from a silicon oxynitride film to a thickness of 100 to 200 [nm]. A second interlayer insulating film 5056 made of an organic insulating material is formed thereon, and then contact holes are formed in the first interlayer insulating film 5055, the second interlayer insulating film 5056, and the gate insulating film 5007. After each wiring (including connection wiring and signal lines) 5057 to 5062 and 5064 is formed by patterning, a pixel electrode 5063 in contact with the connection wiring 5062 is formed by patterning.
[0214]
As the second interlayer insulating film 5056, a film made of a resin is used. As the resin, polyimide, polyamide, acrylic, BCB (benzocyclobutene), or the like can be used. In particular, since the second interlayer insulating film 5056 has a strong meaning of flattening, acrylic having excellent flatness is preferable. In this embodiment, the acrylic film is formed with a film thickness that can sufficiently flatten the step formed by the TFT. Preferably it may be 1-5 [μm] (more preferably 2-4 [μm]).
[0215]
The contact hole is formed by dry etching or wet etching. The contact hole reaches the N-type impurity regions 5017, 5018, 5021, and 5023 or the P-type impurity regions 5043 to 5054, the contact hole reaches the wiring 5042, and the power supply line. A contact hole reaching the gate electrode (not shown) and a contact hole reaching the gate electrode (not shown) are formed.
[0216]
Further, as wirings (including connection wirings and signal lines) 5057 to 5062 and 5064, a Ti film is 100 nm, an aluminum film containing Ti is 300 nm, and a Ti film 150 nm is continuously formed by sputtering. A film obtained by patterning the laminated film having the three-layer structure into a desired shape is used. Of course, other conductive films may be used.
[0217]
In this embodiment, an ITO film having a thickness of 110 [nm] is formed as the pixel electrode 5063 and patterned. A contact is made by arranging the pixel electrode 5063 so as to be in contact with and overlapping with the connection wiring 5062. Alternatively, a transparent conductive film in which 2 to 20% zinc oxide (ZnO) is mixed with indium oxide may be used. This pixel electrode 5063 becomes the anode of the OLED. (Fig. 12 (A))
[0218]
Next, as shown in FIG. 12B, an insulating film containing silicon (silicon oxide film in this embodiment) is formed to a thickness of 500 [nm], and an opening is formed at a position corresponding to the pixel electrode 5063. Then, a third interlayer insulating film 5065 functioning as a bank is formed. When the opening is formed, a tapered sidewall can be easily formed by using a wet etching method. If the side wall of the opening is not sufficiently gentle, the deterioration of the organic light emitting layer due to the step becomes a significant problem, so care must be taken.
[0219]
Next, the organic light emitting layer 5066 and the cathode (MgAg electrode) 5067 are continuously formed by using a vacuum evaporation method without releasing to the atmosphere. The thickness of the organic light emitting layer 5066 is 80 to 200 [nm] (typically 100 to 120 [nm]), and the thickness of the cathode 5067 is 180 to 300 [nm] (typically 200 to 250 [nm]. nm]).
[0220]
In this step, an organic light emitting layer and a cathode are sequentially formed for a pixel corresponding to red, a pixel corresponding to green, and a pixel corresponding to blue. However, since the organic light emitting layer has poor resistance to a solution, it must be formed for each color individually without using a photolithography technique. Therefore, it is preferable to use a metal mask to hide other than the desired pixels and to selectively form the organic light emitting layer and the cathode only at necessary portions.
[0221]
That is, first, a mask that hides all pixels other than those corresponding to red is set, and an organic light emitting layer that emits red light is selectively formed using the mask. Next, a mask that hides all but the pixels corresponding to green is set, and an organic light emitting layer that emits green light is selectively formed using the mask. Next, similarly, a mask for hiding all but the pixels corresponding to blue is set, and a blue light emitting organic light emitting layer is selectively formed using the mask. Note that although all the different masks are described here, the same mask may be used.
[0222]
Here, a method of forming three types of OLEDs corresponding to RGB is used, but a method of combining a white light emitting OLED and a color filter, a blue or blue green light emitting OLED and a phosphor (fluorescent color conversion layer: CCM). ), A method of superimposing OLEDs corresponding to RGB using a transparent electrode as a cathode (counter electrode), or the like may be used.
[0223]
A known material can be used for the organic light emitting layer 5066. As the known material, it is preferable to use an organic material in consideration of the driving voltage. For example, a four-layer structure including a hole injection layer, a hole transport layer, a light emitting layer, and an electron injection layer may be used as the organic light emitting layer.
[0224]
Next, a cathode 5067 is formed using a metal mask on a pixel (a pixel on the same line) having a switching TFT in which a gate electrode is connected to the same gate signal line. In this embodiment, MgAg is used as the cathode 5067, but the present invention is not limited to this. Other known materials may be used for the cathode 5067.
[0225]
Finally, a planarizing film 5068 made of resin is formed to a thickness of 300 [nm]. By forming the planarization film 5068, the organic light emitting layer 5066 can be protected from moisture and the like, and the reliability of the OLED can be further improved.
[0226]
Thus, the state as shown in FIG. Then, although not illustrated, if the manufacturing method described in Embodiment Mode 1 is followed, the second substrate provided with the sealing film is bonded to the planarization film 5068 using the second adhesive layer. The following steps may be performed according to the method shown in the first embodiment. Further, in accordance with the manufacturing method described in Embodiment Mode 2, the second substrate is bonded to the planarization film 5068 using the second adhesive layer. The following steps may be performed in accordance with the method shown in the second embodiment.
[0227]
In the light emitting device manufacturing process in this embodiment, the source signal line is formed by Ta and W, which are materials forming the gate electrode, and the source and drain electrodes are formed due to the circuit configuration and the process. Although the gate signal line is formed of Al which is the wiring material being used, a different material may be used.
[0228]
By the way, the light emitting device of this embodiment can exhibit extremely high reliability and improve operating characteristics by arranging TFTs having an optimum structure not only in the pixel portion but also in the drive circuit portion. In addition, it is possible to increase the crystallinity by adding a metal catalyst such as Ni in the crystallization step. Thereby, the driving frequency of the source signal line driving circuit can be increased to 10 [MHz] or more.
[0229]
First, a TFT having a structure that reduces hot carrier injection so as not to decrease the operating speed as much as possible is used as an N-channel TFT of a CMOS circuit that forms a drive circuit portion. Note that the driving circuit here includes a shift register, a buffer, a level shifter, a latch in line sequential driving, a transmission gate in dot sequential driving, and the like.
[0230]
In this embodiment, the active layer of the N-channel TFT has an overlapping LDD region (L that overlaps the gate electrode with the source region, drain region, and gate insulating film interposed therebetween. _OV Region), an offset LDD region (L _OFF Region) and a channel formation region.
[0231]
In addition, since the P-channel TFT of the CMOS circuit is hardly concerned about deterioration due to hot carrier injection, it is not particularly necessary to provide an LDD region. Of course, it is also possible to provide an LDD region as in the case of the N-channel TFT and take measures against hot carriers.
[0232]
In addition, when the driving circuit uses a CMOS circuit in which a current flows bidirectionally in the channel formation region, that is, a CMOS circuit in which the roles of the source region and the drain region are switched, an N-channel TFT that forms the CMOS circuit In this case, it is preferable to form the LDD region in such a manner that the channel formation region is sandwiched between both sides of the channel formation region. An example of this is a transmission gate used for dot sequential driving. When a CMOS circuit that needs to keep off current as low as possible is used in the driver circuit, an N-channel TFT that forms the CMOS circuit is L _OV It is preferable to have a region. As such an example, there is a transmission gate used for dot sequential driving.
[0233]
In addition, when the light emitting device is actually completed according to the method of Embodiment 1 or Embodiment 2, the protective film (laminate film, ultraviolet curable resin film, etc.) having high hermeticity and low degassing so as not to be exposed to the outside air. ) Or a translucent sealing material. At that time, if the inside of the sealing material is made an inert atmosphere or a hygroscopic material (for example, barium oxide) is arranged inside, the reliability of the OLED is improved.
[0234]
In addition, when the airtightness is improved by processing such as packaging, a connector (flexible printed circuit: FPC) for connecting the terminal drawn from the element or circuit formed on the substrate and the external signal terminal is attached. Completed as a product. In this specification, such a state that can be shipped is referred to as a light emitting device.
[0235]
Further, according to the steps shown in this embodiment, the number of photomasks necessary for manufacturing a light-emitting device can be suppressed. As a result, the process can be shortened, and the manufacturing cost can be reduced and the yield can be improved.
[0236]
This embodiment can be implemented in combination with Embodiment 1 or 2.
[0237]
(Example 4)
In this embodiment, a structure of a light-emitting device of the present invention using an inverted staggered TFT will be described.
[0238]
FIG. 13 shows a cross-sectional view of the light-emitting device of the present invention. A sealing film 601 is formed over a flexible third substrate 603. The sealing film 601 includes a barrier film 601a, a stress relaxation film 601b, and a barrier film 601c.
[0239]
A sealing film 608 is formed over the flexible second substrate 606. The sealing film 608 includes a barrier film 608a, a stress relaxation film 608b, and a barrier film 608c.
[0240]
Between the sealing film 601 and the sealing film 608, TFTs, OLEDs, and other elements are formed. In this embodiment, a TFT 604a included in the driver circuit 610 and TFTs 604b and 604c included in the pixel portion 611 are shown as representative examples.
[0241]
The OLED 605 includes a pixel electrode 640, an organic light emitting layer 641, and a cathode 642.
[0242]
The TFT 604a includes gate electrodes 613 and 614, an insulating film 612 formed in contact with the gate electrodes 613 and 614, and a semiconductor film 615 formed in contact with the insulating film 612. The TFT 604 b includes gate electrodes 620 and 621, an insulating film 612 formed in contact with the gate electrodes 620 and 621, and a semiconductor film 622 formed in contact with the insulating film 612. The TFT 604 c includes a gate electrode 630, an insulating film 612 formed in contact with the gate electrode 630, and a semiconductor film 631 formed in contact with the insulating film 612.
[0243]
Note that although an example in which an inverted staggered TFT is used for the light-emitting device manufactured according to Embodiment Mode 1 is described in this example, this example is not limited to this structure. An inverted staggered TFT may be used for the light-emitting device manufactured according to Embodiment Mode 2.
[0244]
This embodiment can be implemented by freely combining with the first embodiment.
[0245]
(Example 5)
In this embodiment, an example in which the adhesive layer is removed by spraying a fluid will be described.
[0246]
As a method of spraying the fluid, a method of spraying and blowing a high-pressure water stream from a nozzle (referred to as a water jet method) or a method of spraying and spraying a high-pressure gas stream can be used. At this time, an organic solvent, an acidic solution or an alkaline solution may be used instead of water. As the gas, air, nitrogen gas, carbon dioxide gas or rare gas may be used, or these gases may be converted into plasma. However, an appropriate fluid may be selected depending on the material of the adhesive layer and the material of the film and substrate that are not intended to be removed so that the film and substrate that are not intended to be removed are not removed together. It is essential.
[0247]
As the adhesive layer, a porous silicon layer or a silicon layer to which hydrogen, oxygen, nitrogen, or a rare gas is added is used. In the case of using a porous silicon film, an amorphous silicon film or a polycrystalline silicon film may be made porous by anodizing treatment.
[0248]
FIG. 14 shows how the adhesive layer is removed using the water jet method. An OLED 604 is provided between the substrate 603 and the substrate 606. The OLED 604 is covered with an insulating film 603, and a sealing film 609 made of a plurality of insulating films is provided between the insulating film 603 and the substrate 606.
[0249]
In addition, an insulating film 605 and an adhesive layer 606 are provided between the substrate 603 and the OLED 604. The adhesive layer is in contact with the substrate 603. Note that only the OLED is shown here as a typical example, but usually TFTs and other elements are also provided between the insulating film 605 and the insulating film 603.
[0250]
Note that the thickness of the adhesive layer 102 may be 0.1 to 900 μm (preferably 0.5 to 10 μm). In this embodiment, SOG having a thickness of 1 μm is used as the adhesive layer 606.
[0251]
Then, a fluid 607 is sprayed from the nozzle 608 to the adhesive layer 606. Note that in order to efficiently spray the fluid 607 to all exposed portions of the adhesive layer 606, the fluid may be sprayed while rotating the adhesive layer 606 as indicated by an arrow about a center line perpendicular to the substrate.
[0252]
1 × 10 from nozzle 608 ⁷ ~ 1x10 ⁹ Pa (preferably 3 × 10 ⁷ ~ 5x10 ⁸ A fluid 607 to which a pressure of Pa) is applied is sprayed and sprayed onto the exposed portion of the adhesive layer 606. Since the sample rotates, the fluid 607 is sprayed along the exposed surface of the adhesive layer 606.
[0253]
When the fluid sprayed from the nozzle 608 is sprayed onto the adhesive layer 606, the adhesive layer is collapsed and removed by brittleness or is chemically removed by the impact. Thereby, the adhesive layer 606 is collapsed or removed, and the substrate 603 and the insulating film 605 are separated. When separated by the collapse of the adhesive layer, the remaining adhesive layer may be removed again by etching.
[0254]
Note that the fluid 607 may be a liquid such as water, an organic solvent, an acidic solution, or an alkaline solution, or may be a gas such as air, nitrogen gas, carbon dioxide gas, or a rare gas. Further, these gases may be converted into plasma.
[0255]
This embodiment can be implemented in combination with the first to fourth embodiments.
[0256]
(Example 6)
In the present invention, by using an organic light emitting material that can use phosphorescence from triplet excitons for light emission, the external light emission quantum efficiency can be dramatically improved. Thereby, low power consumption, long life, and light weight of the OLED can be achieved.
[0257]
Here, a report of using triplet excitons to improve the external emission quantum efficiency is shown. (T. Tsutsui, C. Adachi, S. Saito, Photochemical Processes in Organized Molecular Systems, ed. K. Honda, (Elsevier Sci. Pub., Tokyo, 1991) p.437.)
[0258]
The molecular formula of the organic light-emitting material (coumarin dye) reported by the above paper is shown below.
[0259]
[Chemical 1]

[0260]
(MABaldo, DFO'Brien, Y.You, A.Shoustikov, S.Sibley, METhompson, SRForrest, Nature 395 (1998) p.151.)
[0261]
The molecular formula of the organic light-emitting material (Pt complex) reported by the above paper is shown below.
[0262]
[Chemical formula 2]

[0263]
(MABaldo, S. Lamansky, PEBurrrows, METhompson, SRForrest, Appl.Phys.Lett., 75 (1999) p.4.) (T.Tsutsui, M.-J.Yang, M.Yahiro, K.Nakamura, T Watanabe, T.tsuji, Y.Fukuda, T.Wakimoto, S.Mayaguchi, Jpn.Appl.Phys., 38 (12B) (1999) L1502.)
[0264]
The molecular formula of the organic light-emitting material (Ir complex) reported by the above paper is shown below.
[0265]
[Chemical 3]

[0266]
As described above, if phosphorescence emission from triplet excitons can be used, in principle, it is possible to realize an external emission quantum efficiency that is 3 to 4 times higher than that in the case of using fluorescence emission from singlet excitons.
[0267]
In addition, the structure of a present Example can be implemented in combination with any structure of Example 1- Example 5 freely.
[0268]
(Example 7)
The organic light emitting material is generally formed using an ink jet method, a spin coat method, or a vapor deposition method. In this example, a method for forming an organic light emitting layer other than the above method will be described.
[0269]
In this embodiment, the spraying of a colloidal solution (also called a sol) in which an assembly of molecules constituting the organic light emitting material is dispersed, sprays the molecules of the organic light emitting material onto the substrate in an inert gas atmosphere. A film including the aggregate is formed. The organic light emitting material exists as particles in which several molecules are aggregated in a liquid.
[0270]
FIG. 15 shows an iridium complex, which is an organic light emitting material, tris (2-phenylpyridine) iridium (Ir (ppy) _Three ) And bathocuproin (BCP) which is an organic light-emitting material (hereinafter referred to as host material) serving as a host in a toluene, a nozzle (not shown) with an inert gas (nitrogen gas in this embodiment) A state in which the organic light emitting layer 650 is formed by being sprayed from is shown.
[0271]
In FIG. 15, the organic light emitting layer 650 is selectively formed with a thickness of 25 to 40 nm using the mask 651. The iridium complex is insoluble in toluene, and BCP is also insoluble in toluene.
[0272]
Actually, the organic light emitting layer may be used as a single layer or may be used by laminating a plurality of layers. In the case where a plurality of layers are stacked and used, after the organic light emitting layer 650 is formed, another organic light emitting layer is similarly formed and stacked. In this case, all the stacked organic light emitting layers are collectively referred to as an organic light emitting layer.
[0273]
The film forming method of this embodiment is a means capable of forming a film regardless of the state of the organic light emitting material in the liquid. In particular, a high-quality organic light emitting layer is formed using an organic light emitting material that is difficult to dissolve. be able to. Then, since the film is formed by spraying a liquid containing an organic light emitting material using a carrier gas, the film can be formed in a short time. In addition, a method for manufacturing a liquid containing an organic light-emitting material to be ejected can be very simple. In this embodiment, when a film having a desired pattern is formed, the film is formed by using a mask and passing through the opening of the mask. In addition, in order to efficiently use an expensive organic light emitting material, it is possible to collect the organic light emitting material attached to the mask and reuse it.
[0274]
In the ink jet method and the spin coating method, there is a restriction that an organic light emitting material having high solubility in a solvent cannot be used. In addition, the vapor deposition method has a limitation that an organic light emitting material that decomposes itself before vapor deposition cannot be used. However, the film forming method of this embodiment is not limited to the above-described restrictions.
[0275]
As organic light emitting materials suitable for the film forming method of this embodiment, quinacridone, tris (2-phenylpyridine) iridium, bathocuproine, poly (1,4-phenylene vinylene), poly (1,4-naphthalene vinylene), poly (2-phenyl-1,4-phenylene vinylene), polythiophene, poly (3-phenylthiophene), poly (1,4-phenylene), poly (2,7-fluorene) and the like.
[0276]
In addition, the structure of a present Example can be implemented in combination freely with any structure of Example 1- Example 6. FIG.
[0277]
(Example 8)
In this example, FIG. 16A shows a detailed top structure of a pixel portion of the light-emitting device of the present invention, and FIG. 16B shows a circuit diagram thereof. In FIG. 16A and FIG. 16B, common reference numerals are used so that they may be referred to each other.
[0278]
One of a source region and a drain region of the switching TFT 802 is electrically connected to the source wiring 815 and the other is electrically connected to the drain wiring 805. The drain wiring 805 is electrically connected to the gate electrode 807 of the current control TFT 806. One of a source region and a drain region of the current control TFT 806 is electrically connected to the current supply line 816, and the other is electrically connected to the drain wiring 817. Further, the drain wiring 817 is electrically connected to the pixel electrode 818 indicated by a dotted line.
[0279]
At this time, a storage capacitor is formed in the region indicated by 819. The storage capacitor 819 is formed between the semiconductor film 820 electrically connected to the current supply line 816, the insulating film (not shown) in the same layer as the gate insulating film, and the gate electrode 807. A capacitor formed by the gate electrode 807, the same layer (not shown) as the first interlayer insulating film, and the current supply line 816 can also be used as the storage capacitor.
[0280]
This embodiment can be combined with Embodiments 1-7.
[0281]
Example 9
In this embodiment, a circuit configuration example of the light emitting device of the present invention is shown in FIG. In this embodiment, a circuit configuration for performing digital driving is shown. In this embodiment, a source side driver circuit 901, a pixel portion 906, and a gate side driver circuit 907 are provided.
[0282]
The source side driver circuit 901 includes a shift register 902, a latch (A) 903, a latch (B) 904, and a buffer 905. In the case of analog driving, a sampling circuit (transfer gate) may be provided instead of the latches (A) and (B). The gate side driver circuit 907 includes a shift register 908 and a buffer 909. The buffer 909 is not necessarily provided.
[0283]
In this embodiment, the pixel portion 906 includes a plurality of pixels, and the plurality of pixels are provided with OLEDs. At this time, the cathode of the OLED is preferably electrically connected to the drain of the current control TFT.
[0284]
The source side driver circuit 901 and the gate side driver circuit 907 are formed of n-channel TFTs or p-channel TFTs obtained in Embodiments 2 to 4.
[0285]
Although not illustrated, a gate side driver circuit may be further provided on the opposite side of the gate side driver circuit 907 with the pixel portion 906 interposed therebetween. In this case, both have the same structure and share the gate wiring, and even if one of them breaks, the gate signal is sent from the remaining one so that the pixel portion operates normally.
[0286]
This embodiment can be combined with Embodiments 1-8.
[0287]
(Example 10)
In this embodiment, a method for forming a sealing film on a flexible plastic substrate by a roll-to-roll method will be described.
[0288]
FIG. 19 simply shows the configuration of the film forming apparatus of this embodiment. The film forming apparatus of the present invention shown in FIG. 19 includes two chambers 804 and 809 for forming a barrier film by sputtering, and chambers 805, 806, 807 and 808 for controlling the atmospheric pressure in the chambers 804 and 809, , A mechanism 820 for applying the resin, and a mechanism 813 for curing the applied resin.
[0289]
A chamber 804 in which a barrier film is formed by sputtering is provided with a roll 801 for unwinding the substrate 802, an application electrode 810 having a target, and a heater 811 that also serves as an electrode. A chamber 809 in which a barrier film is formed by sputtering is provided with a roll 803 for winding the substrate 802, an application electrode 814 having a target, and a heater 815 that also serves as an electrode.
[0290]
The substrate 802 is conveyed from the unwinding roll 801 to the winding roll 803.
[0291]
In this embodiment, silicon nitride is deposited in the chamber 804. Specifically, the atmospheric pressure in the chamber 804 was kept at 0.4 Pa by a turbo molecular pump or the like, and flowed at a flow rate of argon 10 SCCM, nitrogen 35 SCCM, and hydrogen 5 SCCM.
[0292]
The substrate 802 on which the silicon nitride film is formed in the chamber 804 passes through the chambers 805 and 806 in this order, and then is placed under atmospheric pressure, and a resin 812 is applied by a resin application mechanism 820. The chambers 805 and 806 are both evacuated by a turbo molecular pump or the like, and are provided in order to keep the pressure in the chamber 804 at a desired height without being affected by atmospheric pressure. In this embodiment, two chambers 805 and 806 are used to prevent the influence of atmospheric pressure. However, one chamber may be provided depending on circumstances, and three or more chambers may be provided as necessary. .
[0293]
In this embodiment, the resin 812 is a heat-polymerizable polyethylene. After applying the resin 812, the substrate 802 is heated by the halogen lamp 813, and the applied resin 812 is cured.
[0294]
In this embodiment, as the mechanism 813 for curing the applied resin, specifically, a halogen lamp for heating the substrate is provided. When the resin is cured by heating, it is not limited to a halogen lamp, but an infrared lamp, a metal halide lamp, a xenon arc lamp, a carbon arc lamp, a high pressure sodium lamp, or a high pressure mercury lamp can be used. Moreover, you may make it heat not only using a lamp but using a heater etc. When the resin is not a thermosetting resin but an ultraviolet curable resin, the resin may be cured by irradiation with ultraviolet light.
[0295]
Then, the substrate 802 on which the resin is formed is sent to the chambers 807 and 808 and finally reaches the chamber 809. The chambers 807 and 808 are both evacuated by a turbo molecular pump or the like, and are provided in order to keep the atmospheric pressure in the chamber 809 at a desired height without being affected by atmospheric pressure. In this embodiment, two chambers 807 and 808 are used to prevent the influence of atmospheric pressure. However, there may be one such chamber in some cases, and three or more chambers may be provided as necessary. .
[0296]
A silicon nitride oxide film was formed in the chamber 809. Specifically, the atmospheric pressure in the chamber 809 is kept at 0.4 Pa by a turbo molecular pump or the like, argon 10 SCCM, nitrogen 31 SCCM, hydrogen 5 SCCM, N ₂ The flow rate was O4 SCCM.
[0297]
The substrate 802 on which the silicon nitride oxide film is formed is wound up by a winding roll 803.
[0298]
With the above structure, mass production of a flexible plastic substrate having a sealing film in which one layer of a stress relaxation film is provided between two layers of barrier films can be easily performed.
[0299]
Note that in this embodiment, the film formation apparatus for forming the sealing film in which the silicon nitride film, the film made of polyethylene, and the silicon nitride oxide film are stacked is described; however, the barrier film is not limited to this material. The stress relaxation film may be a resin having a stress smaller than that of the barrier film, and is not limited to polyethylene.
[0300]
In this embodiment, a case where two layers of barrier films are formed has been described. However, three or more barrier films may be formed, each time a sputtering chamber and a chamber for preventing the influence of atmospheric pressure. And a mechanism for applying the resin and a mechanism for curing the applied resin may be provided as appropriate.
[0301]
In addition, after winding the substrate 802 with the winding roll 803, the wound substrate is wound again with the unwinding roll 801, and the same process is repeated again, so that the barrier film and the stress relaxation film are removed from the multilayer film. A sealing film to be formed may be formed.
[0302]
This embodiment can be combined with Embodiments 1-9.
[0303]
(Example 11)
Since the light-emitting device is a self-luminous type, it has excellent visibility in a bright place and a wide viewing angle compared to a liquid crystal display. Therefore, it can be used for display portions of various electronic devices.
[0304]
As an electronic device using the light emitting device of the present invention, a video camera, a digital camera, a goggle type display (head mounted display), a navigation system, a sound reproduction device (car audio, audio component, etc.), a notebook type personal computer, a game device, Play back a recording medium such as a portable information terminal (mobile computer, mobile phone, portable game machine or electronic book), an image playback device (specifically a DVD (digital versatile disc)) equipped with a recording medium, A device having a display capable of displaying). In particular, it is desirable to use a light-emitting device for a portable information terminal that often has an opportunity to see a screen from an oblique direction because the wide viewing angle is important. Specific examples of these electronic devices are shown in FIGS.
[0305]
FIG. 18A shows a digital still camera, which includes a main body 2101, a display portion 2102, an image receiving portion 2103, operation keys 2104, an external connection port 2105, a shutter 2106, and the like. The light emitting device of the present invention can be used for the display portion 2102.
[0306]
FIG. 18B shows a mobile computer, which includes a main body 2301, a display portion 2302, a switch 2303, operation keys 2304, an infrared port 2305, and the like. The light emitting device of the present invention can be used for the display portion 2302.
[0307]
FIG. 18C shows a goggle type display (head mounted display), which includes a main body 2501, a display portion 2502, and an arm portion 2503. The light emitting device of the present invention can be used for the display portion 2502.
[0308]
Here, FIG. 18D shows a mobile phone, which includes a main body 2701, a housing 2702, a display portion 2703, an audio input portion 2704, an audio output portion 2705, operation keys 2706, an external connection port 2707, an antenna 2708, and the like. The light emitting device of the present invention can be used for the display portion 2703. Note that the display portion 2703 can reduce power consumption of the mobile phone by displaying white characters on a black background.
[0309]
If the light emission luminance of the organic light emitting material is increased in the future, the light including the output image information can be enlarged and projected by a lens or the like and used in a front type or rear type projector.
[0310]
In addition, the electronic devices often display information distributed through electronic communication lines such as the Internet and CATV (cable television), and in particular, opportunities to display moving image information are increasing. Since the organic light emitting material has a very high response speed, the light emitting device is preferable for displaying moving images.
[0311]
In addition, since the light emitting device consumes power in the light emitting portion, it is desirable to display information so that the light emitting portion is minimized. Therefore, when a light emitting device is used for a display unit mainly including character information, such as a portable information terminal, particularly a mobile phone or a sound reproduction device, it is driven so that character information is formed by the light emitting part with the non-light emitting part as the background. It is desirable to do.
[0312]
As described above, the applicable range of the present invention is so wide that it can be used for electronic devices in various fields. In addition, the electronic device of this embodiment may use the light emitting device having any configuration shown in Embodiments 1 to 10.
[0313]
【The invention's effect】
In the present invention, by laminating a plurality of barrier films, even if a crack occurs in the barrier film, it is possible to effectively prevent moisture and oxygen from being mixed into the organic light-emitting layer in other barrier films. Furthermore, even if the film quality of the barrier film may deteriorate due to the low film formation temperature, it is possible to effectively prevent moisture and oxygen from being mixed into the organic light emitting layer by stacking a plurality of barrier films. Can do.
[0314]
Moreover, the stress of the whole insulating film can be relieved by sandwiching a stress relaxation film having a smaller stress than that of the barrier film between the barrier films. Therefore, even if the total thickness of the barrier film is the same, the barrier film with the stress relaxation film interposed therebetween is less prone to cracking due to stress, compared to a single barrier film.
[0315]
Therefore, even if the total thickness of the barrier film is the same as that of a single barrier film, it is possible to effectively prevent moisture and oxygen from being mixed into the organic light emitting layer, and further, cracks due to stress can be prevented. Is difficult to enter.
[Brief description of the drawings]
FIGS. 1A to 1C illustrate a method for manufacturing a light-emitting device of the present invention. FIGS.
2A and 2B illustrate a method for manufacturing a light-emitting device of the present invention.
3A and 3B illustrate a method for manufacturing a light-emitting device of the present invention.
4A and 4B illustrate a method for manufacturing a light-emitting device of the present invention.
FIGS. 5A and 5B are an external view of a light-emitting device of the present invention, an enlarged view of a connection portion with an FPC, and a cross-sectional view.
FIGS. 6A and 6B are a diagram illustrating a state in which the light-emitting device of the present invention is bent, and a cross-sectional view thereof.
7 is a cross-sectional view of a connection portion between the light emitting device of the present invention and an FPC. FIG.
8A and 8B illustrate a method for manufacturing a light-emitting device of the present invention.
9A and 9B illustrate a method for manufacturing a light-emitting device of the present invention.
FIGS. 10A and 10B are diagrams showing manufacturing steps of a TFT and an OLED of a light emitting device of the present invention. FIGS.
FIGS. 11A and 11B are diagrams showing manufacturing steps of a TFT and an OLED of a light emitting device of the present invention. FIGS.
FIGS. 12A to 12C are diagrams showing manufacturing steps of a TFT and an OLED of a light emitting device of the present invention. FIGS.
FIG. 13 is a cross-sectional view of a light-emitting device of the present invention.
FIG. 14 is a view showing a state where an adhesive layer is removed by a water jet method.
FIG. 15 is a diagram showing a state in which an organic light emitting layer is formed by spraying.
FIG. 16 is a top view of a pixel and a circuit diagram of the pixel.
FIG 17 illustrates a circuit configuration of a light-emitting device.
FIG. 18 is a diagram of an electronic device using the light-emitting device of the present invention.
FIG. 19 is a diagram of a roll-to-roll sealing film forming apparatus.

Claims (34)

A first substrate;
A second substrate;
A light emitting device formed between the first substrate and the second substrate;
A plurality of first insulating films formed between the first substrate and the light emitting element;
One or more second insulating films formed between each of the plurality of first insulating films;
A plurality of third insulating films formed between the second substrate and the light emitting element;
One or more fourth insulating films formed between each of the plurality of third insulating films;
A light emitting device comprising:
The first substrate and the second substrate are made of plastic;
The second insulating film has a lower stress than each of the plurality of first insulating films,
The fourth insulating film is minor stress than the plurality of the third insulating film,
The light emitting device, wherein the plurality of first insulating films or the plurality of third insulating films are made of aluminum nitride oxide silicide . A first substrate;
A second substrate;
A light emitting device and a thin film transistor formed between the first substrate and the second substrate;
A plurality of first insulating films formed between the first substrate and the light emitting device and the thin film transistor;
One or more second insulating films formed between each of the plurality of first insulating films;
A plurality of third insulating films formed between the second substrate and the light emitting device and the thin film transistor;
One or more fourth insulating films formed between each of the plurality of third insulating films;
A light emitting device comprising:
The first substrate and the second substrate are made of plastic;
The second insulating film has a lower stress than each of the plurality of first insulating films,
The fourth insulating film is minor stress than the plurality of the third insulating film,
The light emitting device, wherein the plurality of first insulating films or the plurality of third insulating films are made of aluminum nitride oxide silicide .   3. The light-emitting device according to claim 1, wherein the first substrate or the second substrate has flexibility. A substrate,
A light emitting element;
A plurality of first insulating films formed between the substrate and the light emitting element;
One or more second insulating films formed between each of the plurality of first insulating films;
A plurality of third insulating films;
One or more fourth insulating films formed between each of the plurality of third insulating films;
A light emitting device comprising:
The light emitting element is formed between the plurality of third insulating films and the substrate,
The substrate is formed of plastic;
The second insulating film has a lower stress than each of the plurality of first insulating films,
The fourth insulating film is minor stress than the plurality of the third insulating film,
The light emitting device, wherein the plurality of first insulating films or the plurality of third insulating films are made of aluminum nitride oxide silicide . A substrate,
A light emitting element and a thin film transistor;
A plurality of first insulating films formed between the substrate and the light emitting element and the thin film transistor;
One or more second insulating films formed between each of the plurality of first insulating films;
A plurality of third insulating films;
One or more fourth insulating films formed between each of the plurality of third insulating films;
A light emitting device comprising:
The light emitting element and the thin film transistor are formed between the plurality of third insulating films and the substrate,
The substrate is formed of plastic;
The second insulating film has a lower stress than each of the plurality of first insulating films,
The fourth insulating film is minor stress than the plurality of the third insulating film,
The light emitting device, wherein the plurality of first insulating films or the plurality of third insulating films are made of aluminum nitride oxide silicide . According to claim 4 or claim 5, wherein the substrate is a light-emitting device, characterized in that the flexible.   7. The light-emitting device according to claim 1, wherein the plastic includes polyethersulfone, polycarbonate, polyethylene terephthalate, or polyethylene naphthalate. In any one of claims 1 to 7, wherein the second insulating layer or said fourth insulating film, polyimide, luminescence, comprising acrylic, polyamide, polyimide amide, benzocyclobutene or epoxy resin apparatus. An electronic device characterized by using the light-emitting device according to any one of claims 1 to 8. 10. The electronic device according to claim 9, wherein the electronic device is a video camera, a digital camera, a goggle type display, a car navigation, a personal computer, or a portable information terminal. Forming a first adhesive layer on the first substrate;
Forming a protective film made of Al on the first adhesive layer;
Forming a first insulating film on the protective film;
Forming a light emitting element and a thin film transistor on the first insulating film;
Forming a second insulating film covering the light emitting element and the thin film transistor;
A second group plate, bonding a plurality of fourth insulating films one or more third insulation film is formed between, and said second insulating film in the second adhesive layer,
After removing the first substrate by removing the first adhesive layer to expose the first insulating film by removing the protective film,
A third group plate, bonding a plurality of sixth insulating film one or more fifth insulation film is formed between, and said first insulating film in the third adhesive layer,
The second substrate and the third substrate are made of plastic,
The third insulating film has a lower stress than each of the plurality of fourth insulating films,
The fifth insulating film is minor stress than the plurality of the sixth insulating film,
The method for manufacturing a light-emitting device, wherein the plurality of fourth insulating films or the plurality of sixth insulating films are made of aluminum nitride oxide silicide . Forming a first adhesive layer on the first substrate;
Forming a protective film made of Al on the first adhesive layer;
Forming a first insulating film on the protective film;
Forming a light emitting element, a thin film transistor and a wiring on the first insulating film;
Forming a second insulating film covering the light emitting element, the thin film transistor and the wiring;
A second group plate, bonding a plurality of fourth insulating films one or more third insulation film is formed between, and said second insulating film in the second adhesive layer,
After removing the first substrate by removing the first adhesive layer to expose the first insulating film by removing the protective film,
A third group plate, bonding a plurality of sixth insulating film one or more fifth insulation film is formed between, and said first insulating film in the third adhesive layer,
A part of the wiring is exposed by removing a part of the second substrate, the second insulating film, the one or more third insulating films, the plurality of fourth insulating films, and the second adhesive layer. And electrically connecting a part of the wiring and a terminal of the FPC using a conductive resin having anisotropy,
The second substrate and the third substrate are made of plastic,
The third insulating film has a lower stress than each of the plurality of fourth insulating films,
The fifth insulating film is minor stress than the plurality of the sixth insulating film,
The method for manufacturing a light-emitting device, wherein the plurality of fourth insulating films or the plurality of sixth insulating films are made of aluminum nitride oxide silicide . Forming a first adhesive layer on the first substrate;
Forming a protective film made of Al on the first adhesive layer;
Forming a first insulating film on the protective film;
Forming a light emitting element, a thin film transistor and a wiring on the first insulating film;
Forming a second insulating film covering the light emitting element, the thin film transistor and the wiring;
A second group plate, bonding a plurality of fourth insulating films one or more third insulation film is formed between, and said second insulating film in the second adhesive layer,
After removing the first substrate by removing the first adhesive layer to expose the first insulating film by removing the protective film,
A third group plate, bonding a plurality of sixth insulating film one or more fifth insulation film is formed between, and said first insulating film in the third adhesive layer,
A part of the wiring is exposed by removing a part of the third substrate, the first insulating film, the one or more fifth insulating films, the plurality of sixth insulating films, and the third adhesive layer. And electrically connecting a part of the wiring and a terminal of the FPC using an anisotropic conductive resin,
The second substrate and the third substrate are made of plastic,
The third insulating film has a lower stress than each of the plurality of fourth insulating films,
The fifth insulating film is minor stress than the plurality of the sixth insulating film,
The method for manufacturing a light-emitting device, wherein the plurality of fourth insulating films or the plurality of sixth insulating films are made of aluminum nitride oxide silicide . In any one of claims 11 to 13, by injecting a fluid to the first adhesive layer, a method for manufacturing a light emitting device characterized by removing the first adhesive layer. In any one of claims 11 to 13, wherein the first adhesive layer, a method for manufacturing a light-emitting device characterized by having a silicon. 16. The method for manufacturing a light-emitting device according to claim 15 , wherein the first adhesive layer is removed using halogen fluoride. In any one of claims 11 to 13, wherein the first adhesive layer, a method for manufacturing a light-emitting device characterized by having an SOG. The method for manufacturing a light-emitting device according to claim 17 , wherein the first adhesive layer is removed using hydrogen fluoride. In any one of claims 11 to 13, a method for manufacturing a light emitting device and removing with a laser beam the first adhesive layer. The method for manufacturing a light-emitting device according to claim 19 , wherein the laser beam is a pulse oscillation type or a continuous emission type excimer laser, a YAG laser, or a YVO ₄ laser. 20. The method for manufacturing a light-emitting device according to claim 19 , wherein the laser beam is a fundamental wave, a second harmonic, or a third harmonic of a YAG laser. Forming a first adhesive layer on the first substrate;
Forming a protective film made of Al on the first adhesive layer;
Forming a first insulating film on the protective film;
Forming a light emitting element and a thin film transistor on the first insulating film;
Forming a second insulating film covering the light emitting element and the thin film transistor;
And said second group plate second insulating film laminated on the second adhesive layer,
After removing the first substrate by removing the first adhesive layer to expose the first insulating film by removing the protective film,
A third group plate, bonding a plurality of fourth insulating films one or more third insulation film is formed between, and said first insulating film in the third adhesive layer,
By removing the second adhesive layer, the second insulating film is exposed by removing the second substrate,
Contact with the second insulating film, forming one or more of the plurality of fifth insulation film is formed between the sixth insulating film,
The third base plate is formed of plastic,
The third insulating film has a lower stress than each of the plurality of fourth insulating films,
The fifth insulating film is minor stress than the plurality of the sixth insulating film,
The method for manufacturing a light-emitting device, wherein the plurality of fourth insulating films or the plurality of sixth insulating films are made of aluminum nitride oxide silicide . Forming a first adhesive layer on the first substrate;
Forming a protective film made of Al on the first adhesive layer;
Forming a first insulating film on the protective film;
Forming a light emitting element, a thin film transistor and a wiring on the first insulating film;
Forming a second insulating film covering the light emitting element, the thin film transistor and the wiring;
And said second group plate second insulating film laminated on the second adhesive layer,
After removing the first substrate by removing the first adhesive layer to expose the first insulating film by removing the protective film,
A third group plate, bonding a plurality of fourth insulating films one or more third insulation film is formed between, and said first insulating film in the third adhesive layer,
By removing the second adhesive layer, the second insulating film is exposed by removing the second substrate,
Contact with the second insulating film, forming one or more of the plurality of fifth insulation film is formed between the sixth insulating film,
Said second insulating film, the exposed portions of the wiring by removing one or some of the plurality of fifth insulation film and the plurality of sixth insulating film, a conductive anisotropic Electrically connecting a part of the wiring and a terminal of the FPC using a resin;
The third substrate is made of plastic;
The third insulating film has a lower stress than each of the plurality of fourth insulating films,
The fifth insulating film is minor stress than the plurality of the sixth insulating film,
The method for manufacturing a light-emitting device, wherein the plurality of fourth insulating films or the plurality of sixth insulating films are made of aluminum nitride oxide silicide . Forming a first adhesive layer on the first substrate;
Forming a protective film made of Al on the first adhesive layer;
Forming a first insulating film on the protective film;
Forming a light emitting element, a thin film transistor and a wiring on the first insulating film;
Forming a second insulating film covering the light emitting element, the thin film transistor and the wiring;
And said second group plate second insulating film laminated on the second adhesive layer,
After removing the first substrate by removing the first adhesive layer to expose the first insulating film by removing the protective film,
A third group plate, bonding a plurality of fourth insulating films one or more third insulation film is formed between, and said first insulating film in the third adhesive layer,
By removing the second adhesive layer, the second insulating film is exposed by removing the second substrate,
Contact with the second insulating film, forming one or more of the plurality of fifth insulation film is formed between the sixth insulating film,
The third substrate, the first insulating film, wherein the one or more third insulation Enmaku, a portion of the wiring by removing a portion of the plurality of fourth insulating film and the third adhesive layer Electrically connecting a part of the wiring and a terminal of the FPC using an exposed conductive resin having anisotropy;
The third substrate is made of plastic;
The third insulating film has a lower stress than each of the plurality of fourth insulating films,
The fifth insulating film is minor stress than the plurality of the sixth insulating film,
The method for manufacturing a light-emitting device, wherein the plurality of fourth insulating films or the plurality of sixth insulating films are made of aluminum nitride oxide silicide . 25. The method for manufacturing a light-emitting device according to any one of claims 22 to 24 , wherein one of the first adhesive layer and the second adhesive layer is removed by ejecting a fluid. . 25. The method for manufacturing a light-emitting device according to any one of claims 22 to 24 , wherein the first adhesive layer includes silicon. 27. The method for manufacturing a light-emitting device according to claim 26 , wherein the first adhesive layer is removed using halogen fluoride. 25. The method for manufacturing a light-emitting device according to any one of claims 22 to 24 , wherein the first adhesive layer includes SOG. 29. The method for manufacturing a light-emitting device according to claim 28 , wherein the first adhesive layer is removed using hydrogen fluoride. 25. The method for manufacturing a light-emitting device according to any one of claims 22 to 24 , wherein either one of the first adhesive layer and the second adhesive layer is removed using a laser beam. According to claim 30, wherein the laser beam is pulsed and oscillation type or an excimer laser of continuous emission type, or a YAG laser, a method for manufacturing a light emitting device which is a YVO ₄ laser. 31. The method for manufacturing a light-emitting device according to claim 30 , wherein the laser light is a fundamental wave, a second harmonic, or a third harmonic of a YAG laser. In any one of claims 11 to 32, wherein the third insulating film or the fifth insulating film, polyimide, luminescence, comprising acrylic, polyamide, polyimide amide, benzocyclobutene or epoxy resin Device fabrication method. In any one of claims 11 to 33, wherein the plastic is a method for manufacturing a light-emitting device comprising polyethersulfone, polycarbonate, it has a polyethylene terephthalate or polyethylene naphthalate.

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