JP4190825B2 - Method for manufacturing light emitting device - Google Patents

Description

【０２５５】
(M.A.Baldo, D.F.O'Brien, Y.You, A.Shoustikov, S.Sibley, M.E.Thompson, S.R.Forrest, Nature 395 (1998) p.151.)
【０２５６】
上記の論文により報告された有機発光材料（Ｐｔ錯体）の分子式を以下に示す。
【０２５７】
【化２】

【０２５８】
(M.A.Baldo, S.Lamansky, P.E.Burrrows, M.E.Thompson, S.R.Forrest, Appl.Phys.Lett.,75 (1999) p.4.) (T.Tsutsui, M.-J.Yang, M.Yahiro, K.Nakamura, T.Watanabe, T.tsuji, Y.Fukuda, T.Wakimoto, S.Mayaguchi, Jpn.Appl.Phys., 38 (12B) (1999) L1502.)
【０２５９】
上記の論文により報告された有機発光材料（Ｉｒ錯体）の分子式を以下に示す。
【０２６０】
【化３】

【０２６１】
以上のように三重項励起子からの燐光発光を利用できれば原理的には一重項励起子からの蛍光発光を用いる場合より３〜４倍の高い外部発光量子効率の実現が可能となる。
【０２６２】
なお、本実施例の構成は、実施例１〜実施例９のいずれの構成とも自由に組み合わせて実施することが可能である。
【０２６３】
（実施例１１）
有機発光材料は、一般的にインクジェット法、スピンコート法、蒸着法を用いて成膜されている。本実施例では、上記方法以外の、有機発光層の成膜方法について説明する。
【０２６４】
本実施例では、有機発光材料を構成している分子の集合体を分散させたコロイド溶液（ゾルとも呼ぶ）を用いたスプレー噴射により、不活性ガス雰囲気下で基板上に有機発光材料の分子の集合体を含む膜を形成する。なお、有機発光材料は、液体中に数個の分子が集合した粒子として存在している。
【０２６５】
図１８に、有機発光材料であるイリジウム錯体、トリス（２−フェニルピリジン）イリジウム（Ｉｒ（ｐｐｙ）₃）と、ホストとなる有機発光材料（以下、ホスト材料という）であるバソキュプロイン（ＢＣＰ）とをトルエンに分散させた組成物を、不活性ガス（本実施例では窒素ガス）でノズル（図示しない）から噴射させて、有機発光層６５０を成膜している様子を示す。
【０２６６】
なお、図１８では、マスク６５１を用いて選択的に有機発光層６５０を２５〜４０ｎｍの膜厚で成膜する。イリジウム錯体はトルエンに不溶であり、またＢＣＰもトルエンに不溶である。
【０２６７】
実際には、有機発光層は単層で用いる場合と、複数の層を積層して用いる場合とがある。複数の層を積層して用いる場合、有機発光層６５０を成膜した後に、別の有機発光層を同様に成膜して積層する。この場合、積層された全ての有機発光層をまとめて有機発光層と総称する。
【０２６８】
本実施例の成膜方法では、液体中の有機発光材料がどのような状態であろうとも成膜可能な手段であり、特に溶解しにくい有機発光材料を用いて良質な有機発光層を形成するのに有効な方法である。そして、キャリアガスを用いて有機発光材料を含む液体を噴射（スプレー）させて成膜を行うため、短時間で成膜が可能である。また、噴射させる有機発光材料を含む液体の作製方法は、非常に単純なものとすることができる。また、本実施例は、所望のパターンの膜を形成する場合には、マスクを用い、マスクの開口部を通過させて成膜を行う。また、高価な有機発光材料を効率よく使用するため、マスクに付着した有機発光材料を収集し、再度利用することも可能である。
【０２６９】
インクジェット法及びスピンコート法では、溶媒に対する溶解度が高い有機発光材料は用いることができないという制約があった。また蒸着法では、蒸着させる前に有機発光材料自体が分解してしまう有機発光材料は、用いることができないという制約があった。しかし本実施例の成膜方法は、上述した制約にしばられない。
【０２７０】
本実施例の成膜方法に適している有機発光材料として、キナクリドン、トリス（２−フェニルピリジン）イリジウム、バソキュプロイン、ポリ（１，４−フェニレンビニレン）、ポリ（１，４−ナフタレンビニレン）、ポリ（２−フェニル−１，４−フェニレンビニレン）、ポリチオフェン、ポリ（３−フェニルチオフェン）、ポリ（１，４−フェニレン）、ポリ（２，７−フルオレン）等が挙げられる。
【０２７１】
なお、本実施例の構成は、実施例１〜実施例１０のいずれの構成とも自由に組み合わせて実施することが可能である。
【０２７２】
（実施例１２）
本実施例では、本発明の発光装置の、画素部の詳細な上面構造を図１９（Ａ）に、回路図を図１９（Ｂ）に示す。図１９（Ａ）及び図１９（Ｂ）では共通の符号を用いるので互いに参照すれば良い。
【０２７３】
スイッチング用ＴＦＴ８０２のソース領域とドレイン領域は、一方ははソース配線８１５に電気的に接続され、他方はドレイン配線８０５に電気的に接続される。また、ドレイン配線８０５は電流制御用ＴＦＴ８０６のゲート電極８０７に電気的に接続される。また、電流制御用ＴＦＴ８０６のソース領域とドレイン領域は、一方は電流供給線８１６に電気的に接続され、他方はドレイン配線８１７に電気的に接続される。また、ドレイン配線８１７は点線で示される画素電極８１８に電気的に接続される。
【０２７４】
このとき、８１９で示される領域には保持容量が形成される。保持容量８１９は、電流供給線８１６と電気的に接続された半導体膜８２０、ゲート絶縁膜と同一層の絶縁膜（図示せず）及びゲート電極８０７との間で形成される。また、ゲート電極８０７、第１層間絶縁膜と同一の層（図示せず）及び電流供給線８１６で形成される容量も保持容量として用いることが可能である。
【０２７５】
本実施例は、実施例１〜１１と組み合わせることが可能である。
【０２７６】
（実施例１３）
本実施例では本発明の発光装置の回路構成例を図２０に示す。なお、本実施例ではデジタル駆動を行うための回路構成を示す。本実施例では、ソース側駆動回路９０１、画素部９０６及びゲート側駆動回路９０７を有している。
【０２７７】
ソース側駆動回路９０１は、シフトレジスタ９０２、ラッチ（Ａ）９０３、ラッチ（Ｂ）９０４、バッファ９０５を設けている。なお、アナログ駆動の場合はラッチ（Ａ）、（Ｂ）の代わりにサンプリング回路（トランスファゲート）を設ければ良い。また、ゲート側駆動回路９０７は、シフトレジスタ９０８、バッファ９０９を設けている。バッファ９０９は必ずしも設ける必要はない。
【０２７８】
また、本実施例において、画素部９０６は複数の画素を含み、その複数の画素にＯＬＥＤが設けられている。このとき、ＯＬＥＤの陰極は電流制御ＴＦＴのドレインに電気的に接続されていることが好ましい。
【０２７９】
これらソース側駆動回路９０１およびゲート側駆動回路９０７は実施例２〜４で得られるｎチャネル型ＴＦＴまたはｐチャネル型ＴＦＴで形成されている。
【０２８０】
なお、図示していないが、画素部９０６を挟んでゲート側駆動回路９０７の反対側にさらにゲート側駆動回路を設けても良い。この場合、双方は同じ構造でゲート配線を共有しており、片方が壊れても残った方からゲート信号を送って画素部を正常に動作させるような構成とする。
【０２８１】
本実施例は、実施例１〜１２と組み合わせることが可能である。
【０２８２】
（実施例１４）
発光装置は自発光型であるため、液晶ディスプレイに比べ、明るい場所での視認性に優れ、視野角が広い。従って、様々な電子機器の表示部に用いることができる。
【０２８３】
本発明の発光装置を用いた電子機器として、ビデオカメラ、デジタルカメラ、ゴーグル型ディスプレイ（ヘッドマウントディスプレイ）、ナビゲーションシステム、音響再生装置（カーオーディをディオコンポ等）、ノート型パーソナルコンピュータ、ゲーム機器、携帯情報端末（モバイルコンピュータ、携帯電話、携帯型ゲーム機または電子書籍等）、記録媒体を備えた画像再生装置（具体的にはＤＶＤ（ｄｉｇｉｔａｌ ｖｅｒｓａｔｉｌｅ ｄｉｓｃ）等の記録媒体を再生し、その画像を表示しうるディスプレイを備えた装置）などが挙げられる。特に、斜め方向から画面を見る機会が多い携帯情報端末は、視野角の広さが重要視されるため、発光装置を用いることが望ましい。それら電子機器の具体例を図２１に示す。
【０２８４】
図２１（Ａ）はデジタルスチルカメラであり、本体２１０１、表示部２１０２、受像部２１０３、操作キー２１０４、外部接続ポート２１０５、シャッター２１０６等を含む。本発明の発光装置は表示部２１０２に用いることができる。
【０２８５】
図２１（Ｂ）はモバイルコンピュータであり、本体２３０１、表示部２３０２、スイッチ２３０３、操作キー２３０４、赤外線ポート２３０５等を含む。本発明の発光装置は表示部２３０２に用いることができる。
【０２８６】
図２１（Ｃ）はゴーグル型ディスプレイ（ヘッドマウントディスプレイ）であり、本体２５０１、表示部２５０２、アーム部２５０３を含む。本発明の発光装置は表示部２５０２に用いることができる。
【０２８７】
ここで図２１（Ｄ）は携帯電話であり、本体２７０１、筐体２７０２、表示部２７０３、音声入力部２７０４、音声出力部２７０５、操作キー２７０６、外部接続ポート２７０７、アンテナ２７０８等を含む。本発明の発光装置は表示部２７０３に用いることができる。なお、表示部２７０３は黒色の背景に白色の文字を表示することで携帯電話の消費電力を抑えることができる。
【０２８８】
なお、将来的に有機発光材料の発光輝度が高くなれば、出力した画像情報を含む光をレンズ等で拡大投影してフロント型若しくはリア型のプロジェクターに用いることも可能となる。
【０２８９】
また、上記電子機器はインターネットやＣＡＴＶ（ケーブルテレビ）などの電子通信回線を通じて配信された情報を表示することが多くなり、特に動画情報を表示する機会が増してきている。有機発光材料の応答速度は非常に高いため、発光装置は動画表示に好ましい。
【０２９０】
また、発光装置は発光している部分が電力を消費するため、発光部分が極力少なくなるように情報を表示することが望ましい。従って、携帯情報端末、特に携帯電話や音響再生装置のような文字情報を主とする表示部に発光装置を用いる場合には、非発光部分を背景として文字情報を発光部分で形成するように駆動することが望ましい。
【０２９１】
以上の様に、本発明の適用範囲は極めて広く、あらゆる分野の電子機器に用いることが可能である。また、本実施例の電子機器は実施例１〜１３に示したいずれの構成の発光装置を用いても良い。
【０２９２】
（実施例１５）
ＯＬＥＤに用いられる有機発光材料は低分子系と高分子系に大別される。本発明の発光装置は、低分子系の有機発光材料でも高分子系の有機発光材料でも用いることができる。
【０２９３】
低分子系の有機発光材料は、蒸着法により成膜される。したがって積層構造をとりやすく、ホール輸送層、電子輸送層などの機能が異なる膜を積層することで高効率化しやすい。
【０２９４】
低分子系の有機発光材料としては、キノリノールを配位子としたアルミニウム錯体Ａｌｑ₃、トリフェニルアミン誘導体（ＴＰＤ）等が挙げられる。
【０２９５】
一方、高分子系の有機発光材料は低分子系に比べて物理的強度が高く、素子の耐久性が高い。また塗布により成膜することが可能であるので、素子の作製が比較的容易である。
【０２９６】
高分子系の有機発光材料を用いた発光素子の構造は、低分子系の有機発光材料を用いたときと基本的には同じであり、陰極／有機発光層／陽極となる。しかし、高分子系の有機発光材料を用いた有機発光層を形成する際には、低分子系の有機発光材料を用いたときのような積層構造を形成させることは難しく、知られている中では２層の積層構造が有名である。具体的には、陰極（Ａｌ合金／発光層／正孔輸送層／陽極（ＩＴＯ）という構造である。なお、高分子系の有機発光材料を用いた発光素子の場合には、陰極材料としてＣａを用いることも可能である。
【０２９７】
なお、素子の発光色は、発光層を形成する材料で決まるため、これらを選択することで所望の発光を示す発光素子を形成することができる。発光層の形成に用いることができる高分子系の有機発光材料は、ポリパラフェニレンビニレン系、ポリパラフェニレン系、ポリチオフェン系、ポリフルオレン系が挙げられる。
【０２９８】
ポリパラフェニレンビニレン系には、ポリ（パラフェニレンビニレン） [ＰＰＶ] の誘導体、ポリ（２，５−ジアルコキシ−１，４−フェニレンビニレン） [ＲＯ−ＰＰＶ]、ポリ（２−（２'−エチル−ヘキソキシ）−５−メトキシ−１，４−フェニレンビニレン）[ＭＥＨ−ＰＰＶ]、ポリ（２−（ジアルコキシフェニル）−１,４−フェニレンビニレン）[ＲＯＰｈ−ＰＰＶ]等が挙げられる。
【０２９９】
ポリパラフェニレン系には、ポリパラフェニレン［ＰＰＰ］の誘導体、ポリ（２，５−ジアルコキシ−１，４−フェニレン）[ＲＯ−ＰＰＰ]、ポリ（２，５−ジヘキソキシ−１，４−フェニレン）等が挙げられる。
【０３００】
ポリチオフェン系には、ポリチオフェン［ＰＴ］の誘導体、ポリ（３−アルキルチオフェン）［ＰＡＴ］、ポリ（３−ヘキシルチオフェン）［ＰＨＴ］、ポリ（３−シクロヘキシルチオフェン）［ＰＣＨＴ］、ポリ（３−シクロヘキシル−４−メチルチオフェン）［ＰＣＨＭＴ］、ポリ（３，４−ジシクロヘキシルチオフェン）［ＰＤＣＨＴ］、ポリ［３−（４−オクチルフェニル）−チオフェン］［ＰＯＰＴ］、ポリ［３−（４−オクチルフェニル）−２，２ビチオフェン］［ＰＴＯＰＴ］等が挙げられる。
【０３０１】
ポリフルオレン系には、ポリフルオレン［ＰＦ］の誘導体、ポリ（９，９−ジアルキルフルオレン）［ＰＤＡＦ］、ポリ（９，９−ジオクチルフルオレン）［ＰＤＯＦ］等が挙げられる。
【０３０２】
なお、正孔輸送性の高分子系の有機発光材料を、陽極と発光性の高分子系有機発光材料の間に挟んで形成すると、陽極からの正孔注入性を向上させることができる。一般にアクセプター材料と共に水に溶解させたものをスピンコート法などで塗布する。また、有機溶媒には不溶であるため、上述した発光性の有機発光材料との積層が可能である。
【０３０３】
正孔輸送性の高分子系の有機発光材料としては、ＰＥＤＯＴとアクセプター材料としてのショウノウスルホン酸（ＣＳＡ）の混合物、ポリアニリン［ＰＡＮＩ］とアクセプター材料としてのポリスチレンスルホン酸［ＰＳＳ］の混合物等が挙げられる。
【０３０４】
なお、本実施例の構成は、実施例１〜実施例１４のいずれの構成とも自由に組み合わせて実施することが可能である。
【０３０５】
【発明の効果】
本発明では、封止膜を有するプラスチックフィルムでＯＬＥＤが設けられている基板全体を真空封止することによって、水分や酸素によるＯＬＥＤの劣化を防ぐ効果が増し、ＯＬＥＤの安定性を高めることができる。従って、信頼性の高い発光装置を得ることができる。
【０３０６】
本発明では、複数の無機絶縁膜を積層することで、無機絶縁膜にクラックが生じても、他の無機絶縁膜で水分や酸素の有機発光層への混入を効果的に防ぐことができる。さらに、成膜温度が低いために無機絶縁膜の膜質が低下するようなことがあっても、複数の無機絶縁膜を積層することで、水分や酸素の有機発光層への混入を効果的に防ぐことができる。
【０３０７】
また、無機絶縁膜に比べて内部応力が小さい有機絶縁膜を、有機絶縁膜の間に挟むことで、絶縁膜全体の内部応力を緩和することができる。よって、トータルの無機絶縁膜の厚さは同じであっても、１層のみの無機絶縁膜に比べて、有機絶縁膜を間に挟んだ無機絶縁膜は、内部応力によるクラックが入りにくい。
【０３０８】
したがって、１層のみの無機絶縁膜に比べて、トータルの無機絶縁膜の膜厚は同じであっても、水分や酸素の有機発光層への混入を効果的に防ぐことができ、さらに、内部応力によるクラックが入りにくい。
【図面の簡単な説明】
【図１】 本発明の発光装置の上面図及び断面図を示す図。
【図２】 封止膜の成膜装置の図。
【図３】 本発明の発光装置の封止の仕方を示す図。
【図４】 本発明の発光装置の作製方法を示す図。
【図５】 本発明の発光装置の作製方法を示す図。
【図６】 本発明の発光装置の作製方法を示す図。
【図７】 本発明の発光装置の作製方法を示す図。
【図８】 本発明の封止前の発光装置の外観図と、ＦＰＣとの接続部分の拡大図と断面図。
【図９】 本発明の発光装置を撓めた様子を示す図と、その断面図。
【図１０】 本発明の封止前の発光装置のＦＰＣとの接続部分の断面図。
【図１１】 本発明の発光装置の作製方法を示す図。
【図１２】 本発明の発光装置の作製方法を示す図。
【図１３】 本発明の発光装置のＴＦＴ及びＯＬＥＤの作製工程を示す図。
【図１４】 本発明の発光装置のＴＦＴ及びＯＬＥＤの作製工程を示す図。
【図１５】 本発明の発光装置のＴＦＴ及びＯＬＥＤの作製工程を示す図。
【図１６】 本発明の発光装置の断面図。
【図１７】 ウォータージェット法で接着層を除去している様子を示す図。
【図１８】 スプレー噴射により有機発光層を成膜している様子を示す図。
【図１９】 画素の上面図及び画素の回路図。
【図２０】 発光装置の回路構成を示す図。
【図２１】 本発明の発光装置を用いた電子機器の図。[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a method for manufacturing a semiconductor device, and more particularly, to a light emitting device having a light emitting element formed on a plastic substrate, for example, an organic light emitting device (OLED). The present invention also relates to an OLED module in which an IC including a controller is mounted on the OLED panel. In this specification, the OLED panel and the OLED module are collectively referred to as a light emitting device. The present invention further relates to an electronic apparatus using the light emitting device.
[0002]
[Prior art]
In recent years, technology for forming TFTs (Thin Film Transistors) on a substrate has greatly advanced, and application development to active matrix display devices has been promoted. In particular, a TFT using a polysilicon film has a higher field effect mobility (also referred to as mobility) than a TFT using a conventional amorphous silicon film, and thus can operate at high speed. For this reason, it is possible to control a pixel, which has been conventionally performed by a drive circuit outside the substrate, with a drive circuit formed on the same substrate as the pixel.
[0003]
Such an active matrix display device has various advantages such as a reduction in manufacturing cost, a reduction in size of the display device, an increase in yield, and a reduction in throughput by forming various circuits and elements on the same substrate. .
[0004]
In addition, active matrix light-emitting devices (hereinafter simply referred to as light-emitting devices) having OLEDs as self-luminous elements are being actively researched. The light emitting device is also called an organic light emitting diode (OELD) or an organic light emitting diode (OLED).
[0005]
The OLED emits light by itself and has high visibility, is not required for a backlight necessary for a liquid crystal display device (LCD), is optimal for thinning, and has no restriction on the viewing angle. Therefore, in recent years, light emitting devices using OLEDs have attracted attention as display devices that replace CRTs and LCDs.
[0006]
The OLED has a layer (hereinafter, referred to as an organic light emitting layer) containing an organic compound (organic light emitting material) capable of obtaining luminescence generated by applying an electric field, an anode layer, and a cathode layer. . Luminescence in organic compounds includes light emission (fluorescence) when returning from the singlet excited state to the ground state and light emission (phosphorescence) when returning from the triplet excited state to the ground state. Any one of the above-described light emission may be used, or both light emission may be used.
[0007]
In this specification, all layers formed between the anode and the cathode of the OLED are defined as organic light emitting layers. Specifically, the organic light emitting layer includes a light emitting layer, a hole injection layer, an electron injection layer, a hole transport layer, an electron transport layer, and the like. Basically, the OLED has a structure in which an anode / light emitting layer / cathode is laminated in this order. In addition to this structure, the anode / hole injection layer / light emitting layer / cathode and the anode / hole injection layer / The light emitting layer / electron transport layer / cathode may be stacked in this order.
[0008]
[Problems to be solved by the invention]
Various applications using such a light-emitting device are expected, but in particular, the use of the light-emitting device in a portable device is attracting attention because the thickness of the light-emitting device is thin, and thus the weight can be reduced. Therefore, it has been attempted to form an OLED on a flexible plastic film.
[0009]
A light emitting device in which an OLED is formed on a flexible substrate such as a plastic film can be used for a display having a curved surface, a show window, etc. in addition to being thin and lightweight. . Therefore, the application is not limited to portable devices, and the application range is very wide.
[0010]
However, a substrate made of plastic is generally easy to transmit moisture and oxygen, and the organic light emitting layer is easily deteriorated by these materials, so that the life of the light emitting device is likely to be shortened. Therefore, conventionally, an insulating film such as silicon nitride or silicon nitride oxide is provided between the plastic substrate and the OLED to prevent moisture and oxygen from being mixed into the organic light emitting layer.
[0011]
However, a substrate such as a plastic film is generally vulnerable to heat, and if the film formation temperature of an insulating film such as silicon nitride or silicon nitride oxide is too high, the substrate is likely to be deformed. However, if the film forming temperature is too low, the film quality is deteriorated and it becomes difficult to sufficiently prevent the permeation of moisture and oxygen.
[0012]
Further, when the thickness of an insulating film such as silicon nitride or silicon nitride oxide is increased in order to prevent moisture and oxygen from permeating, internal stress increases and cracks are likely to occur. Further, when the film thickness is increased, the film is likely to crack when the substrate is bent.
[0013]
In view of the above problems, an object of the present invention is to provide a light emitting device having an OLED formed on a plastic substrate capable of suppressing deterioration due to permeation of moisture and oxygen.
[0014]
[Means for Solving the Problems]
The present invention relates to a technique for sealing an OLED provided on a substrate having an insulating surface. The present invention comprises an insulating film made of an inorganic material (hereinafter referred to as an inorganic insulating film) capable of preventing at least oxygen and moisture from permeating when sealing an OLED, and an organic material having an internal stress smaller than that of the inorganic insulating film. Vacuum sealing is performed using a plastic film in which an insulating film (hereinafter referred to as an organic insulating film) is laminated.
[0015]
Specifically, two or more inorganic insulating films are provided, and an organic insulating film having a resin is further provided between the two inorganic insulating films. Then, a substrate provided with an OLED is placed in a bag-shaped plastic film in which the three or more insulating films are laminated on the inside, and sealed to form a light emitting device.
[0016]
Note that in order to increase the flexibility of the plastic film on which the inorganic insulating film is formed, a rare gas element may be added to the reaction gas when the inorganic insulating film is formed to reduce the internal stress of the film.
[0017]
In the present invention, by laminating a plurality of inorganic insulating films, even if cracks occur in the inorganic insulating film, moisture and oxygen can be effectively prevented from entering the organic light emitting layer in the other inorganic insulating films. Furthermore, even if the film quality of the inorganic insulating film may deteriorate due to the low temperature of the inorganic insulating film, moisture and oxygen can be mixed into the organic light-emitting layer by stacking multiple inorganic insulating films. Can be effectively prevented.
[0018]
In addition, the internal stress can be reduced by sandwiching an organic insulating film having a smaller internal stress than the inorganic insulating film between the organic insulating films. Therefore, even if the total thickness of the inorganic insulating film is the same, the inorganic insulating film with the organic insulating film interposed therebetween is less susceptible to cracks due to internal stress than the single-layered inorganic insulating film.
[0019]
Further, the lamination of the inorganic insulating film and the organic insulating film makes it more flexible and can prevent cracks when bent.
[0020]
A film in which the inorganic insulating film and the organic insulating film are stacked (hereinafter referred to as a sealing film) is provided in close contact with the substrate on which the OLED is formed by vacuum pressure bonding. Therefore, the sealing film has a certain degree of flexibility and is a film that is transparent or translucent to visible light.
[0021]
Further, in this specification, transparent to visible light means that the visible light transmittance is 80 to 100%, and translucent to visible light is a visible light transmittance of 50 to 80%. It means that.
[0022]
Moreover, in the said structure, in order to suppress deterioration of the said OLED, it is preferable to provide a desiccant between the board | substrate with which OLED was formed, and the plastic film sealed with the vacuum. The desiccant is preferably barium oxide or silica gel. What is necessary is just to install a desiccant before and after sticking a flexible printed circuit board. Moreover, you may affix a flexible printed circuit board after installing a desiccant in the flexible film of a flexible printed circuit board. Moreover, it is preferable to install in the vicinity of the location to vacuum-press with a plastic film.
[0023]
In this specification, an OLED panel is completed only after being sealed with a plastic film. However, a panel in a state before being sealed with a plastic film may be referred to as an OLED panel.
[0024]
DETAILED DESCRIPTION OF THE INVENTION
First, an FPC 103 for supplying power supply voltage and various signals is mounted on an OLED panel 101 formed using a plastic substrate. In addition, a desiccant 104 is provided to prevent the OLED from being deteriorated by oxygen, moisture, or the like. As the desiccant 104, a hygroscopic substance (preferably barium oxide) or a substance that can adsorb oxygen is used. Here, a desiccant 104 is provided at a position in contact with the FPC 103 and the end face of the substrate 101 so that the sealing film and the plastic film are not destroyed in the subsequent vacuum pressing process, and the sealing film and the plastic film are locally stretched. Do not be.
[0025]
Next, the OLED panel 101 and the desiccant 104 are placed in a bag-shaped plastic film 105 in which a sealing film 109 having gas barrier properties is formed. At this time, a portion where the FPC 103 and the OLED panel 101 are connected is disposed in the plastic film 105 (FIG. 1A).
[0026]
The sealing film 109 includes two or more layers of an inorganic insulating film and an organic insulating film provided between the inorganic insulating films. The inorganic insulating film is an insulating film having an inorganic material capable of preventing permeation of oxygen and moisture, and the organic insulating film is an insulating film having an organic material whose internal stress is smaller than that of the inorganic insulating film.
[0027]
For example, in this embodiment mode, the inorganic insulating film 106 in contact with the plastic film 105, the organic insulating film 107 in contact with the inorganic insulating film 106, and the inorganic insulating film 108 in contact with the organic insulating film 107 are used as the sealing film 109.
[0028]
Note that two or more inorganic insulating films may be provided. As the inorganic insulating film, for example, silicon nitride, silicon nitride oxide, aluminum oxide, aluminum nitride, aluminum nitride oxide, or aluminum nitride oxide silicide (AlSiON) can be used. Since aluminum nitride oxide silicide has a relatively high thermal conductivity, the heat generated in the element can be efficiently dissipated by using it for the inorganic insulating film.
[0029]
The thickness of the inorganic insulating film is desirably in the range of 50 nm to 3 μm. Note that the method for forming the inorganic insulating film is not limited to the plasma CVD method, and can be set as appropriate by the practitioner. For example, the film may be formed using an LPCVD method, a sputtering method, or the like.
[0030]
For the organic insulating film, a material which can form an organic insulating film which has a light-transmitting property, has an internal stress smaller than that of the inorganic insulating film, and can withstand heat treatment in a later process can be used. For example, typically, polyimide, acrylic, polyamide, polyimide amide, benzocyclobutene, epoxy resin, or the like can be used. Resins other than those described above can also be used.
[0031]
The thickness of the organic insulating film is desirably in the range of 200 nm to 2 μm.
[0032]
Then, the bag-shaped plastic film 105 is evacuated and the bag entrance is sealed with the adhesive 102 so that the OLED panel 101 is surrounded by the sealing film 109 inside the plastic film 105. Sealed. A part of the FPC 103 is left outside the plastic film 105 in order to supply a power supply voltage and various signals.
[0033]
FIG. 1B is a cross-sectional view of the light-emitting device after vacuum pressure bonding, and FIG. 1C is a top view. FIG. 1B corresponds to a cross-sectional view taken along a line AA ′ in FIG. It is important that the plastic film 105 and the sealing film 109 are transparent or translucent with respect to visible light. Further, the plastic film 105 may be any material that can be vacuum-bonded.
[0034]
In this embodiment, the plastic film is sealed with an adhesive. However, an area in which the plastic film is partially not covered with the sealing film is provided, and the plastic film is thermocompression bonded in the area. May be. Further, the sealing may be further strengthened with an adhesive after the thermocompression bonding. It is preferable that the film material be bonded to the FPC flexible tape at the time of thermocompression bonding.
[0035]
Plastic film materials include thermoplastic resin materials (polyester, polypropylene, polyvinyl chloride, polyvinyl fluoride, polystyrene, polyacrylonitrile, polyethylene terephthalate, nylon, etc.), typically PVF (polyvinyl fluoride). A film, mylar film, or acrylic resin film may be used.
[0036]
Here, a plastic film having a bag shape or an empty box shape is used, but two sheets may be overlapped and sealed on all four sides with an adhesive or may be sealed by thermocompression bonding. .
[0037]
In addition, after the OLED is formed on the substrate, it is desirable to perform the above process so that the OLED is not exposed to the outside air as much as possible.
[0038]
Thus, according to the present invention, it is possible to provide a light-emitting device using a highly reliable OLED in which deterioration due to moisture, oxygen, or the like is reduced.
[0039]
【Example】
Examples of the present invention will be described below.
[0040]
(Example 1)
In this embodiment, a method for forming a sealing film inside a bag-like plastic film will be described.
[0041]
FIG. 2 shows a configuration of a sealing film forming apparatus using plasma CVD. An electrode 203 connected to the RF power source 202 and a grounded electrode 204 are provided in the chamber 201.
[0042]
The electrode 203 is disposed so as to cover the outside of the bag-shaped plastic film 205, and the electrode 204 is disposed inside the bag-shaped plastic film 205. It is important to set the distance between the electrode 203 and the plastic film 205 and the distance between the electrode 204 and the plastic film 205 so that the sealing film is positively formed inside the plastic film 205 rather than the outside. is there. Specifically, the electrode 203 and the plastic film 205 are arranged so that the distance between them is longer than the distance between the electrode 204 and the plastic film 205. Furthermore, it is desirable that the distance between the electrode 203 and the plastic film 205 be 3 mm or more, further 10 mm or more.
[0043]
The position of the plastic film 205 is fixed by a holder 206. The holder 206 is configured so as not to seal the entrance of the bag-like plastic film 205.
[0044]
When forming the sealing film, the holder 206 is brought into close contact with a part of the inside of the plastic film 205 so that the plastic film is exposed without forming the sealing film inside the plastic film 205. It is possible to create an area that has And when sealing an OLED panel by thermocompression, you may make it heat-press in the area | region where the plastic film is exposed.
[0045]
In this embodiment, an example in which a sealing film 208 including two or more layers of an inorganic insulating film and an organic insulating film provided between the inorganic insulating films is formed inside the plastic film 205 will be described.
[0046]
The inorganic insulating film is an insulating film having an inorganic material capable of preventing permeation of oxygen and moisture, and the organic insulating film is an insulating film having an organic material whose internal stress is smaller than that of the inorganic insulating film. Specifically, in this embodiment, an inorganic insulating film 209 made of silicon nitride oxide is formed so as to be in contact with the plastic film 205 made of PET, and an organic insulating film 210 made of polyethylene is formed so as to be in contact with the inorganic insulating film 209. An inorganic insulating film 211 made of silicon nitride oxide is formed so as to be in contact with the organic insulating film 210.
[0047]
Note that the material of the plastic film and the inorganic insulating film is not limited to this. As materials for the plastic film and the inorganic insulating film, any of the materials described in the embodiment modes can be freely selected and used. However, in this embodiment, since the sealing film is formed using the plasma CVD method, the material of the inorganic insulating film needs to be a material that can be formed by plasma CVD.
[0048]
In addition, the material of the organic insulating film is not limited to polyethylene, and is a material that has a light-transmitting property, has an internal stress smaller than that of the inorganic insulating film, and can withstand heat treatment in later steps. If it is good. However, in this embodiment, since the sealing film is formed using the plasma CVD method, it is important that the organic insulating film is a material that can be formed by the plasma CVD method. For example, polyethylene, polytetrafluoroethylene, polystyrene, benzocyclobutene, poly (p-phenylene vinylene), polyvinyl chloride, polyparaxylylene resin, and the like can be used.
[0049]
First, the inside of the chamber 201 is evacuated and then SiH is used as a reaction gas. _Four , NH _Three And N ₂ O is introduced into the chamber 201, and an inorganic insulating film 209 made of silicon nitride oxide is formed using a plasma CVD method.
[0050]
Next, after evacuating the chamber 201 again, ethylene as a reaction gas is introduced into the chamber 201, and an organic insulating film 210 made of polyethylene is formed using a plasma CVD method.
[0051]
Next, after evacuating the chamber 201 again, SiH was used as a reaction gas. _Four , NH _Three And N ₂ O is introduced into the chamber 201, and an inorganic insulating film 211 made of silicon nitride oxide is formed by plasma CVD.
[0052]
Note that by providing the protective insulating film 207 on the inner wall in advance, it is possible to prevent the raw material of the sealing film from being formed on the inner wall of the chamber 201, and the sealing film 208 is positively formed on the plastic film 205. You can make it.
[0053]
In this embodiment, the sealing film 208 is formed using a plasma CVD method, but the method for forming the sealing film is not limited to this. For example, the film may be formed using a thermal CVD method, a vapor deposition method, a sputtering method, a low pressure thermal CVD method, or the like.
[0054]
(Example 2)
In this embodiment, a method for sealing an OLED panel using a plastic film will be described.
[0055]
In FIG. 3, the structure of the apparatus (sealing apparatus) which seals an OLED panel inside a bag-shaped plastic film is shown. The sealing device has two chambers A302 and B303 partitioned by a partition film 301. The partition film 301 has elasticity, and has a property of generating a force to restore the strain even when the partition membrane 301 is strained (deformed) by an external force.
[0056]
Chamber A302 and chamber B303 each have an exhaust system. The chamber B303 includes a heater 304 and a cooler 305.
[0057]
First, as shown in FIG. 3A, an OLED panel 307 is placed inside a bag-shaped plastic film 306 and placed in a chamber B303. At this time, the FPC 310 is mounted on the OLED panel 307, and an adhesive 308 is disposed near the entrance of the bag-like plastic film 306.
[0058]
Next, the inside of the chamber A302 and the chamber B303 is evacuated, then an inert gas (Ar in this embodiment) is flowed into the chamber B303, and the evacuation is performed again to remove oxygen and moisture in the chamber B303.
[0059]
Next, the adhesive 308 is dissolved using the heater 304. In this embodiment, a hot melt adhesive that is bonded by heating and melting is used as the adhesive 308. Typically, an adhesive mainly composed of ethylene-vinyl acetate copolymer, polyamide, polyester, or the like can be used.
[0060]
Next, with the adhesive 308 heated and melted, as shown in FIG. 3B, the pressure in the chamber A302 is increased by releasing the atmosphere so that the chamber B303 is pushed against the chamber A302. As a result, the plastic film 306 is pressed by the partition film 301 having elasticity. Since the melted adhesive 308 is also pressed, as a result, the OLED panel 307 is vacuum-sealed inside the plastic film 306.
[0061]
In this state, the adhesive 308 is cooled using the cooler 305, and the adhesive 308 is solidified in a state where the OLED panel 307 is vacuum-sealed inside the plastic film 306.
[0062]
Next, as shown in FIG. 3C, the pressure in the chamber B303 is increased to separate the partition film 301 from the sealed OLED panel 307.
[0063]
By the method described above, the OLED panel 307 can be vacuum-sealed in a bag-shaped plastic film.
[0064]
The method of sealing the OLED panel is not limited to the method shown in this embodiment.
[0065]
This embodiment can be implemented by freely combining with the first embodiment.
[0066]
(Example 3)
In this example, a method for manufacturing an OLED panel of the present invention having an OLED on a plastic substrate will be described. 4 and 5 are cross-sectional views illustrating manufacturing steps in the pixel portion and the driver circuit.
[0067]
4A, a first adhesive layer 1102 made of an amorphous silicon film is formed on a first substrate 1101 with a thickness of 100 to 500 nm (300 nm in this embodiment). Although a glass substrate is used as the first substrate 1101 in this embodiment, a quartz substrate, a silicon substrate, a metal substrate, or a ceramic substrate may be used. The first substrate 1101 may be a material that can withstand a processing temperature in a later manufacturing process.
[0068]
In addition, the first adhesive layer 1102 may be formed by using a low pressure thermal CVD method, a plasma CVD method, a sputtering method, or an evaporation method. An insulating film 1103 made of a silicon oxide film is formed on the first adhesive layer 1102 to a thickness of 200 nm. The insulating film 1103 can be formed by a low pressure thermal CVD method, a plasma CVD method, a sputtering method, or an evaporation method. The insulating film 1103 has an effect of protecting elements formed on the first substrate 1101 when the first adhesive layer 1102 is removed and the first substrate 1101 is peeled off.
[0069]
Next, an element is formed over the insulating film 1103 (FIG. 4B). Here, the element refers to a semiconductor element (typically a TFT) or an MIM element, an OLED, or the like used as a switching element of a pixel in the case of an active matrix light emitting device. A passive light-emitting device refers to an OLED. In FIG. 4B, the TFT 1104a of the driver circuit 1106, the TFTs 1104b and 1104c of the pixel portion, and the OLED 1105 are shown as typical elements.
[0070]
Then, an insulating film 1108 is formed so as to cover these elements. The insulating film 1108 preferably has a flatter surface after film formation. Note that the insulating film 1108 is not necessarily provided.
[0071]
Next, as illustrated in FIG. 4C, the second substrate 1110 is bonded to the second adhesive layer 1109. In this embodiment, a plastic substrate is used as the second substrate 1110. Specifically, a resin substrate having a thickness of 10 μm or more, for example, PES (polyether sulfone), PC (polycarbonate), PET (polyethylene terephthalate), or PEN (polyethylene naphthalate) can be used as the second substrate.
[0072]
Further, as the second adhesive layer 1109, it is necessary to use a material having a selection ratio when the first adhesive layer 1102 is removed later. Typically, an insulating film made of a resin can be used. In this embodiment, polyimide is used, but acrylic, polyamide, or epoxy resin may be used. In addition, when it is located on the observer side (the user side of the light emitting device) when viewed from the OLED, it is necessary to be a material that transmits light.
[0073]
Next, as shown in FIG. 5A, the first substrate 1101, the second substrate 1110, and all the elements and the entire film formed between the first substrate 1101 and the second substrate 1110 are made of halogen fluoride. The first adhesive layer 1102 is removed by exposure to a gas containing it. In this embodiment, chlorine trifluoride (ClF) is used as halogen fluoride. _Three ) And nitrogen as the diluent gas. Argon, helium, or neon may be used as the dilution gas. Both flow rates were 500 sccm (8.35 × 10 ^-6 m ^Three / S), and the reaction pressure is 1 to 10 Torr (1.3 × 10 6). ² ~ 1.3 × 10 ^Three Pa). The processing temperature may be room temperature (typically 20 to 27 ° C.).
[0074]
In this case, the silicon film is etched, but the plastic film, glass substrate, polyimide film, and silicon oxide film are not etched. That is, the first adhesive layer 1102 is selectively etched by being exposed to chlorine trifluoride gas, and finally removed completely. Note that the active layer of the TFT, which is also formed of a silicon film, is not exposed on the surface, so that it is not exposed to chlorine trifluoride gas and is not etched.
[0075]
In the case of this embodiment, the first adhesive layer 1102 is gradually etched from the exposed end portion, and the first substrate 1101 and the insulating film 1103 are separated when completely removed. At this time, the TFT and the OLED are formed by laminating thin films, but remain in a form transferred to the second substrate 1110.
[0076]
Here, the first adhesive layer 1102 is etched from the end portion. However, when the first substrate 1101 is large, it takes a long time to be completely removed, which is not preferable. Therefore, it is desirable to implement this embodiment when the first substrate 1101 is 3 inches diagonal or less (preferably 1 inch diagonal or less).
[0077]
After the first substrate 1101 is peeled in this way, as shown in FIG. 5B, a third adhesive layer 1113 is formed and the third substrate 1112 is attached. In this embodiment, a plastic substrate is used as the third substrate 1112. Specifically, a resin substrate having a thickness of 10 μm or more, for example, PES (polyether sulfone), PC (polycarbonate), PET (polyethylene terephthalate), or PEN (polyethylene naphthalate) can be used as the third substrate.
[0078]
As the third adhesive layer 1113, an insulating film made of resin (typically, polyimide, acrylic, polyamide, or epoxy resin) can be used. In addition, when it is located on the observer side as viewed from the OLED, it is necessary to be a material that transmits light.
[0079]
In this manner, a flexible OLED panel (light emitting device) sandwiched between two flexible substrates 1110 and 1112 can be obtained. Note that if the second substrate 1110 and the third substrate 1112 are made of the same material, the thermal expansion coefficients are equal, and therefore, the second substrate 1110 and the third substrate 1112 can be hardly affected by internal stress distortion due to temperature change.
[0080]
Next, as shown in FIG. 5C, the OLED panel is sealed with a plastic film 1118 on which a sealing film 1119 is formed. Note that the sealing film 1119 is disposed between the plastic film 1118 and the OLED 1105 at the time of sealing.
[0081]
In this embodiment, as the sealing film 1119, an inorganic insulating film 1119a, an organic insulating film 1119b, and an inorganic insulating film 1119c are formed from the side close to the plastic film 1118.
[0082]
The light-emitting device manufactured based on this embodiment can form an element (for example, TFT) using a semiconductor without being limited by the heat resistance of the plastic substrate, and thus has extremely high performance. be able to.
[0083]
In this embodiment, amorphous silicon is used as the first adhesive layer 1102 and the first adhesive layer 1102 is removed with a gas containing halogen fluoride. However, the present invention is not limited to this structure. The practitioner can set the material of the first adhesive layer and how to remove it. The first adhesive layer is arranged so that the substrate, the element, and the film that are not intended to be removed other than the first adhesive layer are removed together with the first adhesive layer so that the operation of the light emitting device is not hindered. It is important to set the material and how to remove it. In addition, it is important that the material of the first adhesive layer is a material that is not removed in processes other than the step of removing the first adhesive layer.
[0084]
For example, as the first adhesive layer, an organic material that is vaporized in whole or in part by the laser beam to be irradiated may be used. In addition, when the first adhesive layer has a characteristic of absorbing laser light, for example, when using the second harmonic of a YAG laser, in order to efficiently absorb the laser light only in the first adhesive layer, colored or black It is desirable to use a material (for example, a resin material containing a black colorant). However, the first adhesive layer is a layer that is not vaporized by heat treatment in the element formation step.
[0085]
The first, second, or third adhesive layer may be a single layer or a laminated layer, and an amorphous silicon film or a DLC film may be provided between the adhesive layer and the substrate.
[0086]
Alternatively, the first adhesive layer may be formed of an amorphous silicon film, and the first substrate may be peeled off by irradiating the first adhesive layer with laser light in a later step. In this case, in order to easily peel off the first substrate, it is preferable to use an amorphous silicon film containing a large amount of hydrogen. Since the hydrogen contained in the amorphous silicon film is vaporized by irradiating the laser beam, the first substrate is easily peeled off.
[0087]
Laser light includes pulse oscillation type or continuous emission type excimer laser, YAG laser, YVO _Four A laser can be used. Laser light is applied to the first adhesive layer through the first substrate to vaporize only the first adhesive layer, and the first substrate is peeled off. Therefore, a substrate through which at least the laser beam to be irradiated passes, typically a light-transmitting substrate, such as a glass substrate or a quartz substrate, is used as the first substrate, and the thickness is larger than those of the second and third substrates. Thick ones are preferred.
[0088]
In the present invention, since the laser light passes through the first substrate, it is necessary to appropriately select the type of the laser light and the first substrate. For example, if a quartz substrate is used as the first substrate, a YAG laser (fundamental wave (1064 nm), second harmonic (532 nm), third harmonic (355 nm), fourth harmonic (266 nm) or excimer laser ( In this case, the excimer laser does not pass through the glass substrate, so if the glass substrate is used as the first substrate, the basics of the YAG laser can be obtained. A linear beam may be formed using a wave, a second harmonic, or a third harmonic, preferably using a second harmonic (wavelength 532 nm), and allowed to pass through the glass substrate.
[0089]
Further, for example, a method (typically, a water jet method) for separating the first substrate by spraying a fluid (a liquid or a gas under pressure) onto the first adhesive layer may be used.
[0090]
Moreover, when the first adhesive layer is formed of an amorphous silicon film, the first adhesive layer may be removed using hydrazine.
[0091]
Further, for example, a method of separating the first substrate by etching described in JP-A-8-288522 may be used. Specifically, a coated silicon oxide film (SOG) may be used for the first adhesive layer and removed using hydrogen fluoride. In this case, it is important that the silicon oxide film that is not intended to be removed is a dense film using sputtering or a CVD method so that the selectivity when removing the first adhesive layer with hydrogen fluoride can be obtained. It is.
[0092]
By adopting such a configuration, the second and third substrates are very thin, specifically, even if a substrate having a thickness of 50 μm to 300 μm, preferably 150 μm to 200 μm is used, the reliability is high. A light emitting device can be obtained. In addition, it was difficult to form elements on such a thin substrate using a known manufacturing apparatus, but the present invention performs element formation by bonding to the first substrate. A manufacturing apparatus using a thick substrate can be used without modifying the apparatus.
[0093]
In addition, by using a sealing film formed of a multilayer insulating film, deterioration due to permeation of moisture and oxygen can be more effectively suppressed. In addition, it is possible to realize a more flexible light-emitting device by preventing cracks when the substrate is bent.
[0094]
This embodiment can be implemented by being freely combined with Embodiment 1 or Embodiment 2.
[0095]
Example 4
In this example, a manufacturing method different from Example 3 of the OLED panel of the present invention having an OLED on a plastic substrate will be described. 6 and 7 are cross-sectional views illustrating manufacturing steps in the pixel portion and the driver circuit.
[0096]
In FIG. 6A, a first adhesive layer 1202 made of an amorphous silicon film is formed on a first substrate 1201 to a thickness of 100 to 500 nm (in this embodiment, 300 nm). Although a glass substrate is used as the first substrate 1201 in this embodiment, a quartz substrate, a silicon substrate, a metal substrate, or a ceramic substrate may be used. The first substrate 1201 may be a material that can withstand a processing temperature in a later manufacturing process.
[0097]
In addition, the first adhesive layer 1202 may be formed by a low pressure thermal CVD method, a plasma CVD method, a sputtering method, or an evaporation method. An insulating film 1203 made of a silicon oxide film is formed on the first adhesive layer 1202 to a thickness of 200 nm. The insulating film 1203 can be formed by a low pressure thermal CVD method, a plasma CVD method, a sputtering method, or an evaporation method. The insulating film 1203 has an effect of protecting the element formed on the first substrate 1201 when the first adhesive layer 1202 is removed and the first substrate 1201 is peeled off.
[0098]
Next, an element is formed over the insulating film 1203 (FIG. 6B). Here, the element refers to a semiconductor element (typically a TFT) or an MIM element, an OLED, or the like used as a switching element of a pixel in the case of an active matrix light emitting device. A passive light-emitting device refers to an OLED. In FIG. 6B, the TFT 1204a of the driver circuit 1206, the TFTs 1204b and 1204c of the pixel portion, and the OLED 1205 are shown as typical elements.
[0099]
Then, an insulating film 1208 is formed so as to cover these elements. The insulating film 1208 preferably has a flatter surface after film formation. Note that the insulating film 1208 is not necessarily provided.
[0100]
Next, as illustrated in FIG. 6C, the second substrate 1210 is bonded to the second adhesive layer 1209. Although a glass substrate is used as the second substrate 1210 in this embodiment, a quartz substrate, a silicon substrate, a metal substrate, or a ceramic substrate may be used. The second substrate 1210 may be a material that can withstand a processing temperature in a later manufacturing process.
[0101]
As the second adhesive layer 1209, it is necessary to use a material that can be selected when the first adhesive layer 1202 is removed later. Further, it is necessary that the third adhesive layer for bonding the third substrate is a material that is removed together with the second adhesive layer and does not peel off the third substrate. In this example, a polyamic acid solution which is a precursor of a polyimide resin described in JP-A-5-315630 is used. Specifically, after forming a polyamic acid solution, which is an uncured resin, as a second adhesive layer 1209 with a thickness of 10 to 15 μm, the second substrate 1210 and the interlayer insulating film 1208 are bonded together by thermocompression bonding. And temporary hardening is performed by heating.
[0102]
In the present embodiment, the material of the second adhesive layer is not limited to the polyamic acid solution. It is a material that can be selected when the first adhesive layer 1202 is removed later, and the third adhesive layer for bonding the third substrate is removed together with the second adhesive layer, and the third substrate is peeled off. Any material that does not have to be used. Moreover, it is important that the material is not removed in steps other than the step of removing the second adhesive layer.
[0103]
Next, as shown in FIG. 6D, the first substrate 1201, the second substrate 1210, and all the elements and the entire film formed between the first substrate 1201 and the second substrate 1210 are made of halogen fluoride. The first adhesive layer 1202 is removed by exposure to a gas that contains the first adhesive layer 1202. In this embodiment, chlorine trifluoride (ClF) is used as halogen fluoride. _Three ) And nitrogen as the diluent gas. Argon, helium, or neon may be used as the dilution gas. Both flow rates were 500 sccm (8.35 × 10 ^-6 m ^Three / S), and the reaction pressure is 1 to 10 Torr (1.3 × 10 6). ² ~ 1.3 × 10 ^Three Pa). The processing temperature may be room temperature (typically 20 to 27 ° C.).
[0104]
In this case, the silicon film is etched, but the plastic film, glass substrate, polyimide film, and silicon oxide film are not etched. That is, the first adhesive layer 1202 is selectively etched by being exposed to chlorine trifluoride gas and finally completely removed. Note that the active layer of the TFT, which is also formed of a silicon film, is not exposed on the surface, so that it is not exposed to chlorine trifluoride gas and is not etched.
[0105]
In the case of this embodiment, the first adhesive layer 1202 is gradually etched from the exposed end portion, and when completely removed, the first substrate 1201 and the insulating film 1203 are separated. At this time, the TFT and the OLED are formed by laminating thin films, but remain in a form transferred to the second substrate 1210.
[0106]
Note that the first adhesive layer 1202 is etched from the end portion here, but when the first substrate 1201 becomes large, it takes a long time to be completely removed, which is not preferable. Therefore, it is desirable to implement this embodiment when the first substrate 1201 is 3 inches diagonal or less (preferably 1 inch diagonal or less).
[0107]
After the first substrate 1201 is peeled in this way, as shown in FIG. 7A, a third adhesive layer 1213 is formed and the third substrate 1212 is attached. In this embodiment, a plastic substrate is used as the third substrate 1210. Specifically, a resin substrate having a thickness of 10 μm or more, for example, PES (polyether sulfone), PC (polycarbonate), PET (polyethylene terephthalate), or PEN (polyethylene naphthalate) can be used as the third substrate.
[0108]
As the third adhesive layer 1213, an insulating film made of resin (typically polyimide, acrylic, polyamide, or epoxy resin) can be used. In addition, when it is located on the observer side as viewed from the OLED, it is necessary to be a material that transmits light.
[0109]
Next, as shown in FIG. 7B, the second substrate 1210 is peeled by removing the second adhesive layer 1209. Specifically, the second adhesive layer 1209 is removed by immersing in water for about 1 hour, and the second substrate 1210 can be peeled off.
[0110]
It is important that the second adhesive layer 1209 is peeled off depending on the material of the second adhesive layer, the material of the element or film, the material of the substrate, and the like.
[0111]
Thus, a flexible OLED panel (light-emitting device) using a single plastic substrate 1212 can be obtained.
[0112]
Next, as shown in FIG. 7C, the OLED panel is sealed with a plastic film 1218 on which a sealing film 1219 is formed. Note that the sealing film 1219 is disposed between the plastic film 1218 and the OLED 1205 at the time of sealing.
[0113]
In this embodiment, as the sealing film 1219, an inorganic insulating film 1219a, an organic insulating film 1219b, and an inorganic insulating film 1219c are formed from the side close to the plastic film 1218.
[0114]
The light-emitting device manufactured in this embodiment can be formed with a very high performance because an element using a semiconductor (for example, TFT) can be formed without being limited by the heat resistance of the plastic substrate. it can.
[0115]
In this embodiment, amorphous silicon is used as the first adhesive layer 1202 and the first adhesive layer 1202 is removed with a gas containing halogen fluoride. However, the present invention is not limited to this structure. The practitioner can set the material of the first adhesive layer and how to remove it. Other than the first adhesive layer, the substrate that is not intended to be removed, other adhesive layers, elements, and films are removed together with the first adhesive layer so that the operation of the light emitting device is not hindered. It is important to set the material of the first adhesive layer and how to remove it. In addition, it is important that the material of the first adhesive layer is a material that is not removed in processes other than the step of removing the first adhesive layer.
[0116]
In this embodiment, a polyamic acid solution that is a polyimide resin precursor is used as the second adhesive layer 1209, and the second adhesive layer 1209 is removed with water. However, the present invention is not limited to this configuration. The practitioner can set the material of the second adhesive layer and how to remove it. Other than the second adhesive layer, the substrate that is not intended to be removed, other adhesive layers, elements, and films are removed together with the second adhesive layer so that the operation of the light emitting device is not hindered. It is important to set the material of the second adhesive layer and how to remove it. In addition, it is important that the material of the second adhesive layer is a material that is not removed in processes other than the step of removing the second adhesive layer.
[0117]
For example, as the first or second adhesive layer, an organic material that is vaporized in whole or in part by the irradiated laser light may be used. In addition, when the first or second adhesive layer has a characteristic of absorbing laser light, for example, when using the second harmonic of a YAG laser, the laser light is efficiently absorbed only by the first or second adhesive layer. In addition, it is desirable to use a colored or black (for example, a resin material containing a black colorant). However, the first or second adhesive layer is a layer that is not vaporized by heat treatment in the element formation step.
[0118]
The first, second, or third adhesive layer may be a single layer or a laminated layer, and an amorphous silicon film or a DLC film may be provided between the adhesive layer and the substrate.
[0119]
Alternatively, the first or second adhesive layer may be formed of an amorphous silicon film, and the substrate may be peeled off by irradiating the first or second adhesive layer with laser light in a later step. In this case, in order to easily peel off the substrate, it is preferable to use an amorphous silicon film containing a large amount of hydrogen. Irradiation with laser light vaporizes hydrogen contained in the amorphous silicon film, so that the substrate is easily peeled off.
[0120]
Laser light includes pulse oscillation type or continuous emission type excimer laser, YAG laser, YVO _Four A laser can be used. When peeling the first substrate, laser light is passed through the first substrate to irradiate the first adhesive layer to vaporize only the first adhesive layer and peel the first substrate. When peeling off the second substrate, the second substrate is peeled off by irradiating the second adhesive layer with laser light passing through the second substrate to vaporize only the second adhesive layer. Therefore, as the first or second substrate, a substrate through which at least the laser beam to be irradiated passes, typically a light-transmitting substrate, such as a glass substrate or a quartz substrate, is used, and the thickness is larger than that of the third substrate. A thicker one is preferred.
[0121]
In the present invention, since the laser beam passes through the first or second substrate, it is necessary to appropriately select the type of the laser beam and the type of the substrate. For example, if a quartz substrate is used, a YAG laser (fundamental wave (1064 nm), second harmonic (532 nm), third harmonic (355 nm), fourth harmonic (266 nm) or excimer laser (wavelength 308 nm) is used. The excimer laser does not pass through the glass substrate, so if a glass substrate is used, the fundamental wave, the second harmonic, or the YAG laser may be used. A linear beam may be formed using the third harmonic, preferably using the second harmonic (wavelength 532 nm), and allowed to pass through the glass substrate.
[0122]
Further, for example, a method (typically, a water jet method) for separating the substrate by spraying a fluid (a liquid or a gas under pressure) onto the adhesive layer may be used.
[0123]
Further, when the adhesive layer is formed of an amorphous silicon film, the adhesive layer may be removed using hydrazine.
[0124]
Further, for example, a method of separating the first substrate by etching described in JP-A-8-288522 may be used. Specifically, a coated silicon oxide film (SOG) may be used for the first or second adhesive layer and removed using hydrogen fluoride. In this case, the silicon oxide film that is not intended to be removed is made a dense film by sputtering or CVD so that the selectivity when removing the first or second adhesive layer with hydrogen fluoride can be obtained. It is important.
[0125]
With such a structure, a highly reliable light-emitting device can be obtained even when a third substrate is very thin, specifically, a substrate having a thickness of 50 μm to 300 μm, preferably 150 μm to 200 μm. Obtainable. In addition, although it has been difficult to form elements on such a thin substrate using a known manufacturing apparatus, the present invention forms elements by bonding them to the first substrate and the second substrate. Therefore, a manufacturing apparatus using a thick substrate can be used without modifying the apparatus.
[0126]
In addition, by using a sealing film formed of a multilayer insulating film, deterioration due to permeation of moisture and oxygen can be more effectively suppressed. In addition, it is possible to realize a more flexible light-emitting device by preventing cracks when the substrate is bent.
[0127]
In Example 1 and Example 2, the anode of the OLED may be used as the pixel electrode, or the cathode may be used as the pixel electrode.
[0128]
This embodiment can be implemented by being freely combined with Embodiment 1 or Embodiment 2.
[0129]
(Example 5)
In this embodiment, an appearance of a light emitting device before sealing according to the present invention and connection with an FPC will be described.
[0130]
FIG. 8A shows an example of an external view of the light-emitting device before sealing shown in Example 3. Reference numeral 1301 denotes a second substrate, and 1302 denotes a third substrate, both of which are plastic substrates having flexibility. A pixel portion 1303 and a driver circuit (a source side driver circuit 1304 and a gate side driver circuit 1305) are provided between the second substrate 1301 and the third substrate 1302.
[0131]
8A illustrates an example in which the source side driver circuit 1304 and the gate side driver circuit 1305 are formed over the same substrate as the pixel portion 1303; however, the source side driver circuit 1304 and the gate side driver circuit 1305 are illustrated. A driver circuit typified by the above may be formed on a different substrate from the pixel portion and connected via an FPC or the like.
[0132]
The number and arrangement of the source side driver circuits 1304 and the gate side driver circuits 1305 are not limited to the structure illustrated in FIG.
[0133]
Reference numeral 1306 denotes an FPC, and a signal and a power supply voltage from an IC including a controller are supplied to the pixel portion 1303, the source side driver circuit 1304, and the gate side driver circuit 1305 through the FPC 1306.
[0134]
An enlarged view of a portion surrounded by a dotted line where the FPC 1306 and the second substrate 1301 are connected as shown in FIG. 8A is shown in FIG. FIG. 8C is a cross-sectional view taken along line AA ′ of FIG.
[0135]
A wiring 1310 is provided between the second substrate 1301 and the third substrate 1302 so as to supply a signal and a power supply voltage to the pixel portion 1303, the source side driver circuit 1304, and the gate side driver circuit 1305. It has been. Further, the FPC 1306 is provided with a terminal 1311.
[0136]
Reference numeral 1314 denotes a desiccant, which has an effect of preventing substances that promote deterioration, such as oxygen and moisture, from entering an OLED (not shown).
[0137]
Various films such as an insulating film provided between the second substrate 1301 and the second substrate 1301 and the lead wiring 1310 are partially removed by a laser or the like, so that a contact hole 1313 is provided. Therefore, the plurality of lead wires 1310 are exposed in the contact holes 1313 and are electrically connected to the terminals 1311 by the conductive resin 1312 having anisotropy, respectively.
[0138]
Note that although FIG. 8 illustrates an example in which part of the wiring extended from the second substrate 1301 side is exposed, the present invention is not limited to this. You may make it expose a part of wiring extended from the 3rd board | substrate 1302 side.
[0139]
FIG. 9A illustrates a state in which the light-emitting device illustrated in FIG. 8A is bent. In the light-emitting device shown in Example 3, since both the second substrate and the third substrate have flexibility, as shown in FIG. 9A, the light-emitting device can be bent to some extent. Therefore, it can be used for a display having a curved surface, a show window, and the like, and its application range is very wide. Note that the light-emitting device shown in Embodiment 4 is not limited to the light-emitting device shown in Embodiment 3 and can be bent in the same manner.
[0140]
FIG. 9B is a cross-sectional view of the light-emitting device illustrated in FIG. A plurality of elements are formed between the second substrate 1301 and the third substrate 1302. Here, the TFTs 1320a, 1320b, and 1320c and the OLED 1322 are representatively illustrated. A broken line 1323 is a center line between the second substrate 1301 and the third substrate 1302.
[0141]
The second substrate 1301 is covered with a plastic film 1324 with a sealing film 1321 interposed therebetween. The third substrate 1302 is also covered with the plastic film 1324 with the sealing film 1321 interposed therebetween.
[0142]
The sealing film 1321 includes an inorganic insulating film 1321a in contact with the plastic film 1324, an organic insulating film 1321b in contact with the inorganic insulating film 1321a, and an inorganic insulating film 1321c in contact with the organic insulating film 1321b. Yes.
[0143]
Next, the connection of the light emitting device before sealing shown in Example 4 with the FPC will be described. FIG. 10 is a cross-sectional view of a portion where the light emitting device before sealing shown in Example 4 and the FPC are connected.
[0144]
On the third substrate 1401, wiring 1403 for drawing is provided.
[0145]
Various films such as an insulating film provided between the third substrate 1401 and the lead-out wiring 1403 are partially removed by a laser or the like, so that a contact hole is provided. The lead wiring 1403 is exposed in the contact hole, and is electrically connected to a terminal 1405 included in the FPC 1404 by an anisotropic conductive resin 1406.
[0146]
Although FIG. 10 illustrates an example in which a part of the insulating film on the lead-out wiring 1403 is removed and a part of the lead-out wiring 1403 is exposed, the present invention is not limited to this. A part of the wiring 1403 routed from the third substrate 1401 side may be exposed.
[0147]
This embodiment can be implemented by being freely combined with Embodiment 1 or Embodiment 2.
[0148]
(Example 6)
In this example, an example of a method for manufacturing a light-emitting device of the present invention will be described.
[0149]
In FIG. 11A, a first adhesive layer 502 made of a coated silicon oxide film (SOG) is formed on the first substrate 501 to a thickness of 100 to 500 nm (300 nm in this embodiment). In this embodiment, a glass substrate is used as the first substrate 501, but a quartz substrate, a silicon substrate, a metal substrate, or a ceramic substrate may be used. The first substrate 501 may be a material that can withstand a processing temperature in a later manufacturing process.
[0150]
In addition, an iodine liquid is added to the SOG solution by spin coating, and the coated silicon oxide film is dried to release iodine. Thereafter, heat treatment at about 400 ° C. is performed to form a film. In this embodiment, SOG having a thickness of 100 nm is formed. Note that a method for manufacturing the SOG as the first adhesive layer 502 is not limited to the above method. The SOG may be an organic SOG or an inorganic SOG. Any SOG that can be removed by hydrogen fluoride in a later step may be used. It is important that the silicon oxide film that is not intended to be removed be a dense film using sputtering or a CVD method so that the selectivity when removing the first adhesive layer with hydrogen fluoride can be obtained. is there.
[0151]
Next, a protective film made of Al is formed on the first adhesive layer 502 by using a low pressure thermal CVD method, a plasma CVD method, a sputtering method, or an evaporation method. In this embodiment, a protective film 503 made of Al is formed to a thickness of 200 nm on the first adhesive layer 502 by using a sputtering method.
[0152]
In this embodiment, Al is used as the material of the protective film 503, but the present invention is not limited to this. It is important that the protective film 503 is a material that is not removed together when the first adhesive layer 502 is removed, and is a material that is not removed in a process other than the step of removing the protective film 503. is there. Furthermore, it is important that the material is such that no other film or substrate is removed in the step of removing the protective film 503. The protective film 503 has an effect of protecting the element formed on the first substrate 501 when the first adhesive layer 502 is removed and the first substrate 501 is peeled off.
[0153]
Next, an element is formed over the protective film 503 (FIG. 11B). In FIG. 11B, the TFTs 504a and 504b of the driver circuit are typically shown.
[0154]
In this embodiment, 504a is an n-channel TFT, and 504b is a p-channel TFT. The TFTs 504a and 504b form a CMOS.
[0155]
The TFT 504a includes a first electrode 550 formed on the protective film 503, an insulating film 551 formed to cover the first electrode 550, and a semiconductor film formed in contact with the insulating film 551. 552, an insulating film 553 formed in contact with the semiconductor film 552, and a second electrode 554 in contact with the insulating film 553.
[0156]
The TFT 504b includes a first electrode 560 formed on the protective film 503, an insulating film 551 formed so as to cover the first electrode 560, and a semiconductor film formed in contact with the insulating film 551. 562, an insulating film 553 formed in contact with the semiconductor film 562, and a second electrode 564 in contact with the insulating film 553.
[0157]
Note that a terminal 570 which is formed at the same time as the first electrodes 550 and 560 is provided over the protective film 503.
[0158]
Further, an insulating film 565 is formed to cover the TFT 504a and the TFT 504b. Through the contact holes formed in the insulating film 565, the insulating film 551, and the insulating film 553, the wiring 571 in contact with the semiconductor film 552 and the terminal 570, and the wiring 572 in contact with the semiconductor film 552 and the semiconductor film 562 Then, a wiring 573 in contact with the semiconductor film 562 is formed.
[0159]
Further, although not shown, an OLED is formed on the insulating film 565. An insulating film 574 is formed to cover the wiring 571, the wiring 572, the wiring 573, the insulating film 565, and the OLED. The insulating film 574 preferably has a flatter surface after film formation. Note that the insulating film 574 is not necessarily provided.
[0160]
Next, as illustrated in FIG. 11C, the second substrate 510 is bonded to the second adhesive layer 509. In this embodiment, a plastic substrate is used as the second substrate 510. Specifically, a resin substrate having a thickness of 10 μm or more, for example, PES (polyether sulfone), PC (polycarbonate), PET (polyethylene terephthalate), or PEN (polyethylene naphthalate) can be used as the second substrate.
[0161]
Further, as the second adhesive layer 509, it is necessary to use a material having a selection ratio when the first adhesive layer 502 is removed later. Typically, an insulating film made of a resin can be used. In this embodiment, polyimide is used, but acrylic, polyamide, or epoxy resin may be used. In addition, when it is located on the observer side (the user side of the light emitting device) when viewed from the OLED, it is necessary to be a material that transmits light.
[0162]
Next, as shown in FIG. 11D, the first adhesive layer 502 is removed using hydrogen fluoride. In this embodiment, the first substrate 501, the second substrate 510, and all elements and the entire film formed between the first substrate 501 and the second substrate 510 are buffered hydrofluoric acid (HF / NH _Four The first adhesive layer 502 is removed by dipping in F = 0.01 to 0.2, for example, 0.1).
[0163]
At this time, since the silicon oxide film not intended to be removed is formed by a dense film using sputtering or CVD, only the first adhesive layer is removed with hydrogen fluoride.
[0164]
In this embodiment, the first adhesive layer 502 is gradually etched from the exposed end, and the first substrate 501 and the protective film 503 are separated when they are completely removed. At this time, the TFT and the OLED are formed by laminating thin films, but remain in a form transferred to the second substrate 510.
[0165]
Here, the first adhesive layer 502 is etched from the end. However, when the first substrate 501 is enlarged, it takes a long time to be completely removed, which is not preferable. Therefore, it is desirable to implement this embodiment when the first substrate 501 has a diagonal of 3 inches or less (preferably a diagonal of 1 inch or less).
[0166]
Next, as shown in FIG. 12A, the protective film 503 is removed. In this embodiment, the protective film 503 made of Al is removed by wet etching using a phosphoric acid-based etching solution, and the terminals 570 and the first electrodes 550 and 560 are exposed.
[0167]
Then, as shown in FIG. 12B, a third adhesive layer 513 made of an anisotropic conductive resin is formed, and the terminal 570 and the first electrodes 550 and 560 are exposed from the third substrate 512. Paste it on the side where it is.
[0168]
In this embodiment, a plastic substrate is used as the third substrate 512. Specifically, a resin substrate having a thickness of 10 μm or more, for example, PES (polyether sulfone), PC (polycarbonate), PET (polyethylene terephthalate), or PEN (polyethylene naphthalate) can be used as the third substrate.
[0169]
As the third adhesive layer 513, an insulating film made of resin (typically polyimide, acrylic, polyamide, or epoxy resin) can be used. In addition, when it is located on the observer side as viewed from the OLED, it is necessary to be a material that transmits light.
[0170]
Before adhering the third substrate 512, a contact hole is formed in the third substrate 512 with a laser or the like, and Al is deposited on the portion of the third substrate 512 where the contact hole is formed and the periphery thereof. Thus, terminals 580 and 581 that are electrically connected to both surfaces of the third substrate 512 are formed. Note that the method of forming the terminals 580 and 581 is not limited to the above structure.
[0171]
The terminal 580 formed on the third substrate 512 is electrically connected to the terminal 570 formed at the same time as the first electrodes 550 and 560 through the third adhesive layer 513.
[0172]
Thus, a flexible light-emitting device sandwiched between the two plastic substrates 510 and 512 can be obtained. Note that, if the second substrate 510 and the third substrate 512 are made of the same material, the thermal expansion coefficients are equal to each other, so that the second substrate 510 and the third substrate 512 can be hardly affected by internal stress distortion due to a temperature change.
[0173]
12C, the terminal 581 which is not in contact with the third adhesive layer 513 and is in contact with the third substrate 512 and the terminal 591 which the FPC 590 has are made anisotropic. Connection is made through a fourth adhesive layer 592 made of conductive resin.
[0174]
Next, as shown in FIG. 12C, the OLED panel is sealed with a plastic film 521 on which a sealing film 520 is formed. During sealing, the sealing film 520 is disposed between the plastic film 521 and the OLED (not shown).
[0175]
In this embodiment, as the sealing film 520, an inorganic insulating film 520a, an organic insulating film 520b, and an inorganic insulating film 520c are formed from the side close to the plastic film 521.
[0176]
The light-emitting device manufactured in this embodiment can be formed with a very high performance because an element using a semiconductor (for example, TFT) can be formed without being limited by the heat resistance of the plastic substrate. it can.
[0177]
In this embodiment, SOG is used as the first adhesive layer 502, and the first adhesive layer 502 is removed using hydrogen fluoride. However, the present invention is not limited to this configuration. The practitioner can set the material of the first adhesive layer and how to remove it. The first adhesive layer is arranged so that the substrate, the element, and the film that are not intended to be removed other than the first adhesive layer are removed together with the first adhesive layer so that the operation of the light emitting device is not hindered. It is important to set the material and how to remove it. In addition, it is important that the material of the first adhesive layer is a material that is not removed in processes other than the step of removing the first adhesive layer.
[0178]
For example, as the first adhesive layer, an organic material that is vaporized in whole or in part by the laser beam to be irradiated may be used. In addition, when the first adhesive layer has a characteristic of absorbing laser light, for example, when using the second harmonic of a YAG laser, in order to efficiently absorb the laser light only in the first adhesive layer, colored or black It is desirable to use a material (for example, a resin material containing a black colorant). However, the first adhesive layer is a layer that is not vaporized by heat treatment in the element formation step.
[0179]
The first, second, or third adhesive layer may be a single layer or a laminated layer, and an amorphous silicon film or a DLC film may be provided between the adhesive layer and the substrate.
[0180]
Alternatively, the first adhesive layer may be formed of an amorphous silicon film, and the first substrate may be peeled off by irradiating the first adhesive layer with laser light in a later step. In this case, in order to easily peel off the first substrate, it is preferable to use an amorphous silicon film containing a large amount of hydrogen. Since the hydrogen contained in the amorphous silicon film is vaporized by irradiating the laser beam, the first substrate is easily peeled off.
[0181]
Laser light includes pulse oscillation type or continuous emission type excimer laser, YAG laser, YVO _Four A laser can be used. Laser light is applied to the first adhesive layer through the first substrate to vaporize only the first adhesive layer, and the first substrate is peeled off. Therefore, a substrate through which at least the laser beam to be irradiated passes, typically a light-transmitting substrate, such as a glass substrate or a quartz substrate, is used as the first substrate, and the thickness is larger than those of the second and third substrates. Thick ones are preferred.
[0182]
In the present invention, since the laser light passes through the first substrate, it is necessary to appropriately select the type of the laser light and the first substrate. For example, if a quartz substrate is used as the first substrate, a YAG laser (fundamental wave (1064 nm), second harmonic (532 nm), third harmonic (355 nm), fourth harmonic (266 nm) or excimer laser ( In this case, the excimer laser does not pass through the glass substrate, so if the glass substrate is used as the first substrate, the basics of the YAG laser can be obtained. A linear beam may be formed using a wave, a second harmonic, or a third harmonic, preferably using a second harmonic (wavelength 532 nm), and allowed to pass through the glass substrate.
[0183]
Alternatively, a method (typically a water jet method) for separating the first substrate by spraying a fluid (a liquid or a gas under pressure) onto the first adhesive layer may be used. You may use it in combination.
[0184]
Moreover, when the first adhesive layer is formed of an amorphous silicon film, the first adhesive layer may be removed using hydrazine.
[0185]
Further, for example, a method of separating the first substrate by etching described in JP-A-8-288522 may be used. Specifically, a coated silicon oxide film (SOG) may be used for the first adhesive layer and removed using hydrogen fluoride. In this case, it is important that the silicon oxide film that is not intended to be removed is a dense film using sputtering or a CVD method so that the selectivity when removing the first adhesive layer with hydrogen fluoride can be obtained. It is.
[0186]
By adopting such a configuration, the second and third substrates are very thin, specifically, even if a substrate having a thickness of 50 μm to 300 μm, preferably 150 μm to 200 μm is used, the reliability is high. A light emitting device can be obtained. In addition, it was difficult to form elements on such a thin substrate using a known manufacturing apparatus, but the present invention performs element formation by bonding to the first substrate. A manufacturing apparatus using a thick substrate can be used without modifying the apparatus.
[0187]
In addition, by using a sealing film formed of a multilayer insulating film, deterioration due to permeation of moisture and oxygen can be more effectively suppressed. In addition, it is possible to realize a more flexible light-emitting device by preventing cracks when the substrate is bent.
[0188]
This embodiment can be implemented by being freely combined with Embodiment 1 or Embodiment 2.
[0189]
(Example 7)
In this embodiment, a method for simultaneously manufacturing TFTs of a pixel portion of a light-emitting device of the present invention and a driver circuit portion (a source signal line side driver circuit and a gate signal line side driver circuit) provided around the pixel portion is described. However, in order to simplify the description, a CMOS circuit which is a basic unit is illustrated in the drive circuit portion.
[0190]
First, as shown in FIG. 13A, on a first substrate 5000 made of glass such as barium borosilicate glass represented by Corning # 7059 glass or # 1737 glass or aluminoborosilicate glass, A first adhesive layer 5001 made of a crystalline silicon film is formed to a thickness of 100 to 500 nm (300 nm in this embodiment). The first adhesive layer 5001 may be formed by using a low pressure thermal CVD method, a plasma CVD method, a sputtering method, or an evaporation method. In this embodiment, the film was formed by using the sputtering method.
[0191]
Next, a base film 5002 made of an insulating film such as a silicon oxide film, a silicon nitride film, or a silicon oxynitride film is formed over the first adhesive layer 5001. The base film 5002 has an effect of protecting the element formed on the substrate 5000 when the first adhesive layer 5001 is removed and the substrate 5000 is peeled off. For example, SiH by plasma CVD method _Four , NH _Three , N ₂ A silicon oxynitride film made of O is formed to 10 to 200 nm (preferably 50 to 100 nm) and similarly SiH _Four , N ₂ A silicon oxynitride silicon film formed from O is stacked to a thickness of 50 to 200 nm (preferably 100 to 150 nm). Although the base film 5002 is shown as a two-layer structure in this embodiment, it may be formed as a single-layer film of the insulating film or a structure in which two or more layers are stacked.
[0192]
The island-shaped semiconductor layers 5003 to 5006 are formed using a crystalline semiconductor film in which a semiconductor film having an amorphous structure is formed using a laser crystallization method or a known thermal crystallization method. The island-like semiconductor layers 5003 to 5006 are formed to a thickness of 25 to 80 nm (preferably 30 to 60 nm). There is no limitation on the material of the crystalline semiconductor film, but the crystalline semiconductor film is preferably formed of silicon or a silicon germanium (SiGe) alloy.
[0193]
In order to fabricate a crystalline semiconductor film by laser crystallization, a pulse oscillation type or continuous emission type excimer laser, YAG laser, YVO _Four Use a laser. When these lasers are used, it is preferable to use a method in which laser light emitted from a laser oscillator is linearly collected by an optical system and irradiated onto a semiconductor film. Crystallization conditions are appropriately selected by the practitioner. When an excimer laser is used, the pulse oscillation frequency is 300 Hz and the laser energy density is 100 to 400 mJ / cm. ² (Typically 200-300mJ / cm ² ). When a YAG laser is used, the second harmonic is used and the pulse oscillation frequency is set to 30 to 300 kHz, and the laser energy density is set to 300 to 600 mJ / cm. ² (Typically 350-500mJ / cm ² ) Then, laser light condensed linearly with a width of 100 to 1000 μm, for example 400 μm, is irradiated over the entire surface of the substrate, and the superposition rate (overlap rate) of the linear laser light at this time is 50 to 90%.
[0194]
Next, a gate insulating film 5007 is formed to cover the island-shaped semiconductor layers 5003 to 5006. The gate insulating film 5007 is formed of an insulating film containing silicon with a thickness of 40 to 150 nm by using a plasma CVD method or a sputtering method. In this embodiment, a silicon oxynitride film is formed with a thickness of 120 nm. Needless to say, the gate insulating film is not limited to such a silicon oxynitride film, and another insulating film containing silicon may be used as a single layer or a stacked structure. For example, when a silicon oxide film is used, TEOS (Tetraethyl Orthosilicate) and O ₂ And a reaction pressure of 40 Pa, a substrate temperature of 300 to 400 ° C., a high frequency (13.56 MHz), and a power density of 0.5 to 0.8 W / cm. ² It can be formed by discharging. The silicon oxide film thus manufactured can obtain good characteristics as a gate insulating film by thermal annealing at 400 to 500 ° C. thereafter.
[0195]
Then, a first conductive film 5008 and a second conductive film 5009 for forming a gate electrode are formed over the gate insulating film 5007. In this embodiment, the first conductive film 5008 is formed with Ta to a thickness of 50 to 100 nm, and the second conductive film 5009 is formed with W to a thickness of 100 to 300 nm.
[0196]
The Ta film is formed by sputtering, and a Ta target is sputtered with Ar. In this case, when an appropriate amount of Xe or Kr is added to Ar, the internal stress of the Ta film can be relieved and peeling of the film can be prevented. The resistivity of the α-phase Ta film is about 20 μΩcm and can be used as a gate electrode, but the resistivity of the β-phase Ta film is about 180 μΩcm and is not suitable for a gate electrode. In order to form an α-phase Ta film, tantalum nitride having a crystal structure close to that of the Ta α-phase is formed on a Ta base with a thickness of about 10 to 50 nm, so that an α-phase Ta film can be easily obtained. I can do it.
[0197]
When forming a W film, it is formed by sputtering using W as a target. In addition, tungsten hexafluoride (WF ₆ It can also be formed by a thermal CVD method using In any case, it is necessary to reduce the resistance in order to use it as a gate electrode, and it is desirable that the resistivity of the W film be 20 μΩcm or less. Although the resistivity of the W film can be reduced by increasing the crystal grains, if the impurity element such as oxygen is large in W, the crystallization is hindered and the resistance is increased. Therefore, when sputtering is used, a W film having a purity of 99.9999 or 99.99% is used, and a W film is formed with sufficient consideration so that impurities are not mixed in the gas phase during film formation. Thus, a resistivity of 9 to 20 μΩcm can be realized.
[0198]
Note that in this embodiment, the first conductive film 5008 is Ta and the second conductive film 5009 is W, but there is no particular limitation, and any of them is selected from Ta, W, Ti, Mo, Al, Cu, and the like. Or an alloy material or a compound material containing the element as a main component. Alternatively, a semiconductor film typified by a polycrystalline silicon film doped with an impurity element such as phosphorus may be used. As another example of a combination other than the present embodiment, a combination in which the first conductive film 5008 is formed of tantalum nitride (TaN) and the second conductive film 5009 is W is used. Is made of tantalum nitride (TaN), the second conductive film 5009 is made of Al, the first conductive film 5008 is made of tantalum nitride (TaN), and the second conductive film 5009 is made of Cu. Can be mentioned.
[0199]
Next, a resist mask 5010 is formed, and a first etching process is performed to form electrodes and wirings. In this embodiment, an ICP (Inductively Coupled Plasma) etching method is used, and CF is used as an etching gas. _Four And Cl ₂ And 500 W RF (13.56 MHz) power is applied to the coil-type electrode at a pressure of 1 Pa to generate plasma. 100 W RF (13.56 MHz) power is also applied to the substrate side (sample stage), and a substantially negative self-bias voltage is applied. CF _Four And Cl ₂ When W is mixed, the W film and the Ta film are etched to the same extent.
[0200]
Under the above etching conditions, by making the shape of the resist mask suitable, the end portions of the first conductive layer and the second conductive layer are tapered due to the effect of the bias voltage applied to the substrate side. The angle of the tapered portion is 15 to 45 °. In order to perform etching without leaving any residue on the gate insulating film, it is preferable to increase the etching time at a rate of about 10 to 20%. Since the selection ratio of the silicon oxynitride film to the W film is 2 to 4 (typically 3), the surface where the silicon oxynitride film is exposed is etched by about 20 to 50 nm by the over-etching process. Thus, the first shape conductive layers 5011 to 5016 (the first conductive layers 5011a to 5016a and the second conductive layers 5011b to 5016b) formed of the first conductive layer and the second conductive layer by the first etching treatment. Form. At this time, in the gate insulating film 5007, a region which is not covered with the first shape conductive layers 5011 to 5016 is etched and thinned by about 20 to 50 nm. (FIG. 13 (A))
[0201]
Then, an impurity element imparting N-type is added by performing a first doping process. As a doping method, an ion doping method or an ion implantation method may be used. The condition of the ion doping method is a dose of 1 × 10 ¹³ ~ 5x10 ¹⁴ atoms / cm ² The acceleration voltage is set to 60 to 100 keV. As an impurity element imparting N-type, an element belonging to Group 15, typically phosphorus (P) or arsenic (As) is used. Here, phosphorus (P) is used. In this case, the conductive layers 5011 to 5015 serve as a mask for the impurity element imparting N-type, and the first impurity regions 5017 to 5025 are formed in a self-aligning manner. The first impurity regions 5017 to 5025 have 1 × 10 ²⁰ ~ 1x10 ^{twenty one} atoms / cm ^Three An impurity element imparting N-type is added in a concentration range of. (Fig. 13B)
[0202]
Next, as shown in FIG. 13C, a second etching process is performed without removing the resist mask. CF as etching gas _Four And Cl ₂ And O ₂ Then, the W film is selectively etched. At this time, second shape conductive layers 5026 to 5031 (first conductive layers 5026a to 5031a and second conductive layers 5026b to 5031b) are formed by the second etching process. At this time, in the gate insulating film 5007, regions that are not covered with the second shape conductive layers 5026 to 5031 are further etched and thinned by about 20 to 50 nm.
[0203]
CF of W film and Ta film _Four And Cl ₂ The etching reaction by the mixed gas can be estimated from the generated radical or ion species and the vapor pressure of the reaction product. Comparing the vapor pressure of fluoride and chloride of W and Ta, WF, which is fluoride of W ₆ Is extremely high, other WCl _Five , TaF _Five , TaCl _Five Are comparable. Therefore, CF _Four And Cl ₂ With this mixed gas, both the W film and the Ta film are etched. However, an appropriate amount of O is added to this mixed gas. ₂ When CF is added _Four And O ₂ Reacts to CO and F, and a large amount of F radicals or F ions are generated. As a result, the etching rate of the W film having a high fluoride vapor pressure is increased. On the other hand, the increase in etching rate of Ta is relatively small even when F increases. Further, since Ta is more easily oxidized than W, O ₂ When Ta is added, the surface of Ta is oxidized. Since the Ta oxide does not react with fluorine or chlorine, the etching rate of the Ta film further decreases. Therefore, it is possible to make a difference in the etching rate between the W film and the Ta film, and the etching rate of the W film can be made larger than that of the Ta film.
[0204]
Then, a second doping process is performed as shown in FIG. In this case, the impurity amount imparting N-type is doped as a condition of a high acceleration voltage by lowering the dose than the first doping treatment. For example, the acceleration voltage is 70 to 120 keV and 1 × 10 ¹³ atoms / cm ² A new impurity region is formed inside the first impurity region formed in the island-shaped semiconductor layer in FIG. 13B. Doping is performed using the second shape conductive layers 5026 to 5030 as masks against the impurity elements so that the impurity elements are also added to the lower regions of the first conductive layers 5026a to 5030a. Thus, third impurity regions 5032 to 5036 are formed. The concentration of phosphorus (P) added to the third impurity regions 5032 to 5036 has a gradual concentration gradient according to the film thickness of the tapered portions of the first conductive layers 5026a to 5030a. Note that, in the semiconductor layer overlapping the tapered portions of the first conductive layers 5026a to 5030a, although the impurity concentration slightly decreases inward from the end portions of the tapered portions of the first conductive layers 5026a to 5030a, The concentration is similar.
[0205]
A third etching process is performed as shown in FIG. CHF as etching gas ₆ And using a reactive ion etching method (RIE method). By the third etching treatment, the tapered portions of the first conductive layers 5026a to 5031a are partially etched, and a region where the first conductive layer overlaps with the semiconductor layer is reduced. Through the third etching treatment, third-shaped conductive layers 5037 to 5042 (first conductive layers 5037a to 5042a and second conductive layers 5037b to 5042b) are formed. At this time, in the gate insulating film 5007, a region that is not covered with the third shape conductive layers 5037 to 5042 is further etched and thinned by about 20 to 50 nm.
[0206]
By the third etching process, in the third impurity regions 5032 to 5036, the third impurity regions 5032a to 5036a overlapping with the first conductive layers 5037a to 5041a, the first impurity region, the third impurity region, Second impurity regions 5032b to 5036b are formed.
[0207]
Then, as shown in FIG. 14C, fourth impurity regions 5043 to 5054 having a conductivity type opposite to the first conductivity type are formed in the island-like semiconductor layers 5004 and 5006 forming the P-channel TFT. . Using the third shape conductive layers 5038b and 5041b as masks against the impurity element, impurity regions are formed in a self-aligning manner. At this time, the island-shaped semiconductor layers 5003 and 5005 and the wiring portion 5042 forming the N-channel TFT are covered with the resist mask 5200 in advance. Phosphorus is added to the impurity regions 5043 to 5054 at different concentrations, but diborane (B ₂ H ₆ ), And the impurity concentration in each region is 2 × 10 ²⁰ ~ 2x10 ^{twenty one} atoms / cm ^Three To be.
[0208]
Through the above steps, impurity regions are formed in each island-like semiconductor layer. The third shape conductive layers 5037 to 5041 overlapping with the island-shaped semiconductor layers function as gate electrodes. Reference numeral 5042 functions as an island-shaped source signal line.
[0209]
After removing the resist mask 5200, a process of activating the impurity element added to each island-like semiconductor layer is performed for the purpose of controlling the conductivity type. This step is performed by a thermal annealing method using a furnace annealing furnace. In addition, a laser annealing method or a rapid thermal annealing method (RTA method) can be applied. The thermal annealing method is performed at 400 to 700 ° C., typically 500 to 600 ° C. in a nitrogen atmosphere having an oxygen concentration of 1 ppm or less, preferably 0.1 ppm or less. Heat treatment is performed. However, when the wiring material used for the third shape conductive layers 5037 to 5042 is weak against heat, activation is performed after an interlayer insulating film (mainly composed of silicon) is formed to protect the wiring and the like. Preferably it is done.
[0210]
Further, a heat treatment is performed at 300 to 450 ° C. for 1 to 12 hours in an atmosphere containing 3 to 100% hydrogen to perform a step of hydrogenating the island-shaped semiconductor layer. This step is a step of terminating dangling bonds in the semiconductor layer with thermally excited hydrogen. As another means of hydrogenation, plasma hydrogenation (using hydrogen excited by plasma) may be performed.
[0211]
Next, as shown in FIG. 15A, a first interlayer insulating film 5055 is formed with a thickness of 100 to 200 nm from a silicon oxynitride film. A second interlayer insulating film 5056 made of an organic insulating material is formed thereon, and then contact holes are formed in the first interlayer insulating film 5055, the second interlayer insulating film 5056, and the gate insulating film 5007. After each wiring (including connection wiring and signal lines) 5057 to 5062 and 5064 is formed by patterning, a pixel electrode 5063 in contact with the connection wiring 5062 is formed by patterning.
[0212]
As the second interlayer insulating film 5056, a film made of a resin is used. As the resin, polyimide, polyamide, acrylic, BCB (benzocyclobutene), or the like can be used. In particular, since the second interlayer insulating film 5056 has a strong meaning of flattening, acrylic having excellent flatness is preferable. In this embodiment, the acrylic film is formed with a film thickness that can sufficiently flatten the step formed by the TFT. The thickness is preferably 1 to 5 μm (more preferably 2 to 4 μm).
[0213]
The contact hole is formed by dry etching or wet etching. The contact hole reaches the N-type impurity regions 5017, 5018, 5021, and 5023 or the P-type impurity regions 5043 to 5054, the contact hole reaches the wiring 5042, and the power supply line. A contact hole reaching the gate electrode (not shown) and a contact hole reaching the gate electrode (not shown) are formed.
[0214]
Further, as wirings (including connection wirings and signal lines) 5057 to 5062 and 5064, a laminated film having a three-layer structure in which a Ti film is 100 nm, an aluminum film containing Ti is 300 nm, and a Ti film 150 nm is continuously formed by sputtering is desired. What was patterned into the shape of is used. Of course, other conductive films may be used.
[0215]
In this example, an ITO film having a thickness of 110 nm was formed as the pixel electrode 5063 and patterned. A contact is made by arranging the pixel electrode 5063 so as to be in contact with and overlapping with the connection wiring 5062. Alternatively, a transparent conductive film in which 2 to 20% zinc oxide (ZnO) is mixed with indium oxide may be used. This pixel electrode 5063 becomes the anode of the OLED. (Fig. 15 (A))
[0216]
Next, as shown in FIG. 15B, an insulating film containing silicon (silicon oxide film in this embodiment) is formed to a thickness of 500 nm, and an opening is formed at a position corresponding to the pixel electrode 5063. A third interlayer insulating film 5065 functioning as a bank is formed. When the opening is formed, a tapered sidewall can be easily formed by using a wet etching method. If the side wall of the opening is not sufficiently gentle, the deterioration of the organic light emitting layer due to the step becomes a significant problem, so care must be taken.
[0217]
Next, the organic light emitting layer 5066 and the cathode (MgAg electrode) 5067 are continuously formed by using a vacuum evaporation method without releasing to the atmosphere. Note that the thickness of the organic light emitting layer 5066 may be 80 to 200 nm (typically 100 to 120 nm), and the thickness of the cathode 5067 may be 180 to 300 nm (typically 200 to 250 nm).
[0218]
In this step, an organic light emitting layer and a cathode are sequentially formed for a pixel corresponding to red, a pixel corresponding to green, and a pixel corresponding to blue. However, since the organic light emitting layer has poor resistance to a solution, it must be formed for each color individually without using a photolithography technique. Therefore, it is preferable to use a metal mask to hide other than the desired pixels and to selectively form the organic light emitting layer and the cathode only at necessary portions.
[0219]
That is, first, a mask that hides all pixels other than those corresponding to red is set, and an organic light emitting layer that emits red light is selectively formed using the mask. Next, a mask that hides all but the pixels corresponding to green is set, and an organic light emitting layer that emits green light is selectively formed using the mask. Next, similarly, a mask for hiding all but the pixels corresponding to blue is set, and a blue light emitting organic light emitting layer is selectively formed using the mask. Note that although all the different masks are described here, the same mask may be used.
[0220]
Here, a method of forming three types of OLEDs corresponding to RGB is used, but a method of combining a white light emitting OLED and a color filter, a blue or blue green light emitting OLED and a phosphor (fluorescent color conversion layer: CCM). ), A method of superimposing OLEDs corresponding to RGB using a transparent electrode as a cathode (counter electrode), or the like may be used.
[0221]
A known material can be used for the organic light emitting layer 5066. As the known material, it is preferable to use an organic material in consideration of the driving voltage. For example, a four-layer structure including a hole injection layer, a hole transport layer, a light emitting layer, and an electron injection layer may be used as the organic light emitting layer.
[0222]
Next, a cathode 5067 is formed using a metal mask on a pixel (a pixel on the same line) having a switching TFT in which a gate electrode is connected to the same gate signal line. In this embodiment, MgAg is used as the cathode 5067, but the present invention is not limited to this. Other known materials may be used for the cathode 5067.
[0223]
Finally, a planarizing film 5068 made of resin is formed to a thickness of 300 nm. By forming the planarization film 5068, the organic light emitting layer 5066 can be protected from moisture and the like, and the reliability of the OLED can be further improved.
[0224]
Thus, the state shown in FIG. 15B is completed. Although not shown, if the manufacturing method described in Example 3 is followed, the second substrate provided with the sealing film is bonded to the planarization film 5068 using the second adhesive layer. The following steps may be performed according to the method shown in the first embodiment. If the manufacturing method described in Embodiment 4 is followed, the second substrate is bonded to the planarization film 5068 using the second adhesive layer. The following steps may be performed in accordance with the method shown in the second embodiment.
[0225]
Note that in the manufacturing process of the light-emitting device in this embodiment, the source signal line is formed by Ta and W, which are materials forming the gate electrode, and the source and drain electrodes are formed because of the circuit configuration and process. Although the gate signal line is formed of Al which is the wiring material being used, a different material may be used.
[0226]
By the way, the light emitting device of this embodiment can exhibit extremely high reliability and improve operating characteristics by arranging TFTs having an optimum structure not only in the pixel portion but also in the drive circuit portion. In addition, it is possible to increase the crystallinity by adding a metal catalyst such as Ni in the crystallization step. Thereby, the driving frequency of the source signal line driving circuit can be made 10 MHz or more.
[0227]
First, a TFT having a structure that reduces hot carrier injection so as not to decrease the operating speed as much as possible is used as an N-channel TFT of a CMOS circuit that forms a drive circuit portion. Note that the driving circuit here includes a shift register, a buffer, a level shifter, a latch in line sequential driving, a transmission gate in dot sequential driving, and the like.
[0228]
In this embodiment, the active layer of the N-channel TFT has an overlapping LDD region (L that overlaps the gate electrode with the source region, drain region, and gate insulating film interposed therebetween. _OV Region), an offset LDD region (L _OFF Region) and a channel formation region.
[0229]
In addition, since the P-channel TFT of the CMOS circuit is hardly concerned about deterioration due to hot carrier injection, it is not particularly necessary to provide an LDD region. Of course, it is also possible to provide an LDD region as in the case of the N-channel TFT and take measures against hot carriers.
[0230]
In addition, when the driving circuit uses a CMOS circuit in which a current flows bidirectionally in the channel formation region, that is, a CMOS circuit in which the roles of the source region and the drain region are switched, an N-channel TFT that forms the CMOS circuit In this case, it is preferable to form the LDD region in such a manner that the channel formation region is sandwiched between both sides of the channel formation region. An example of this is a transmission gate used for dot sequential driving. When a CMOS circuit that needs to keep off current as low as possible is used in the driver circuit, an N-channel TFT that forms the CMOS circuit is L _OV It is preferable to have a region. As such an example, there is a transmission gate used for dot sequential driving.
[0231]
Further, according to the steps shown in this embodiment, the number of photomasks necessary for manufacturing a light-emitting device can be suppressed. As a result, the process can be shortened, and the manufacturing cost can be reduced and the yield can be improved.
[0232]
This example can be implemented in combination with Examples 1-5.
[0233]
(Example 8)
In this embodiment, a structure of a light-emitting device of the present invention using an inverted staggered TFT will be described.
[0234]
FIG. 16 is a cross-sectional view of the light-emitting device of the present invention. A sealing film 601 is formed to cover the flexible second substrate 602 and the third substrate 672. A plastic film 671 is provided so as to cover the sealing film 601. The sealing film 601 includes an inorganic insulating film 601a, an organic insulating film 601b, and an inorganic insulating film 601c.
[0235]
TFTs, OLEDs, and other elements are formed between the second substrate 602 and the third substrate 672. In this embodiment, a TFT 604a included in the driver circuit 610 and TFTs 604b and 604c included in the pixel portion 611 are shown as representative examples.
[0236]
The OLED 605 includes a pixel electrode 640, an organic light emitting layer 641, and a cathode 642.
[0237]
The TFT 604a includes gate electrodes 613 and 614, an insulating film 612 formed in contact with the gate electrodes 613 and 614, and a semiconductor film 615 formed in contact with the insulating film 612. The TFT 604 b includes gate electrodes 620 and 621, an insulating film 612 formed in contact with the gate electrodes 620 and 621, and a semiconductor film 622 formed in contact with the insulating film 612. The TFT 604 c includes a gate electrode 630, an insulating film 612 formed in contact with the gate electrode 630, and a semiconductor film 631 formed in contact with the insulating film 612.
[0238]
Note that although an example in which an inverted staggered TFT is used for the light-emitting device manufactured according to Example 3 is described in this example, this example is not limited to this structure. An inverted staggered TFT may be used for the light-emitting device manufactured according to Embodiment 4.
[0239]
This embodiment can be implemented by freely combining with the first to fifth embodiments.
[0240]
Example 9
In this embodiment, an example in which the adhesive layer is removed by spraying a fluid will be described.
[0241]
As a method of spraying the fluid, a method of spraying and blowing a high-pressure water stream from a nozzle (referred to as a water jet method) or a method of spraying and spraying a high-pressure gas stream can be used. At this time, an organic solvent, an acidic solution or an alkaline solution may be used instead of water. As the gas, air, nitrogen gas, carbon dioxide gas or rare gas may be used, or these gases may be converted into plasma. However, an appropriate fluid may be selected depending on the material of the adhesive layer and the material of the film and substrate that are not intended to be removed so that the film and substrate that are not intended to be removed are not removed together. It is essential.
[0242]
As the adhesive layer, a porous silicon layer or a silicon layer to which hydrogen, oxygen, nitrogen, or a rare gas is added is used. In the case of using a porous silicon film, an amorphous silicon film or a polycrystalline silicon film may be made porous by anodizing treatment.
[0243]
FIG. 17 shows a state where the adhesive layer is removed using the water jet method. An OLED 1604 is provided between the substrate 1601 and the substrate 1602. The OLED 1604 is covered with an insulating film 1603.
[0244]
In addition, an insulating film 1605 and an adhesive layer 1606 are provided between the substrate 1601 and the OLED 1604. The adhesive layer 1606 is in contact with the substrate 1601. Note that only the OLED is shown here as a typical example, but usually TFTs and other elements are also provided between the insulating film 1605 and the insulating film 1603.
[0245]
Note that the thickness of the adhesive layer 1606 may be 0.1 to 900 μm (preferably 0.5 to 10 μm). In this embodiment, SOG having a thickness of 1 μm is used as the adhesive layer 1606.
[0246]
Then, a fluid 1607 is sprayed from the nozzle 1608 to the adhesive layer 1606. Note that in order to efficiently spray the fluid 1607 to all exposed portions of the adhesive layer 1606, the fluid may be sprayed while rotating the adhesive layer 1606 as indicated by an arrow about a center line perpendicular to the substrate.
[0247]
1x10 from nozzle 1608 ⁷ ~ 1x10 ⁹ Pa (preferably 3 × 10 ⁷ ~ 5x10 ⁸ A fluid 1607 to which a pressure of Pa) is applied is sprayed and sprayed onto the exposed portion of the adhesive layer 1606. Since the sample rotates, the fluid 1607 is sprayed along the exposed surface of the adhesive layer 1606.
[0248]
When the fluid sprayed from the nozzle 1608 is sprayed on the adhesive layer 1606, the adhesive layer is broken and removed due to brittleness or is chemically removed by the impact. Accordingly, the adhesive layer 1606 is collapsed or removed, and the substrate 1601 and the insulating film 1605 are separated. When separated by the collapse of the adhesive layer, the remaining adhesive layer may be removed again by etching.
[0249]
Note that the fluid 1607 may be a liquid such as water, an organic solvent, an acidic solution, or an alkaline solution, or may be a gas such as air, nitrogen gas, carbon dioxide gas, or a rare gas. Further, these gases may be converted into plasma.
[0250]
This example can be implemented in combination with Examples 1-8.
[0251]
(Example 10)
In the present invention, by using an organic light emitting material that can utilize phosphorescence from triplet excitons for light emission, the external light emission quantum efficiency can be dramatically improved. Thereby, low power consumption, long life, and light weight of the OLED can be achieved.
[0252]
Here, a report of using triplet excitons to improve the external emission quantum efficiency is shown.
(T. Tsutsui, C. Adachi, S. Saito, Photochemical Processes in Organized Molecular Systems, ed. K. Honda, (Elsevier Sci. Pub., Tokyo, 1991) p.437.)
[0253]
The molecular formula of the organic light-emitting material (coumarin dye) reported by the above paper is shown below.
[0254]
[Chemical 1]

[0255]
(MABaldo, DFO'Brien, Y.You, A.Shoustikov, S.Sibley, METhompson, SRForrest, Nature 395 (1998) p.151.)
[0256]
The molecular formula of the organic light-emitting material (Pt complex) reported by the above paper is shown below.
[0257]
[Chemical 2]

[0258]
(MABaldo, S. Lamansky, PEBurrrows, METhompson, SRForrest, Appl.Phys.Lett., 75 (1999) p.4.) (T.Tsutsui, M.-J.Yang, M.Yahiro, K.Nakamura, T Watanabe, T.tsuji, Y.Fukuda, T.Wakimoto, S.Mayaguchi, Jpn.Appl.Phys., 38 (12B) (1999) L1502.)
[0259]
The molecular formula of the organic light-emitting material (Ir complex) reported by the above paper is shown below.
[0260]
[Chemical 3]

[0261]
As described above, if phosphorescence emission from triplet excitons can be used, in principle, it is possible to realize an external emission quantum efficiency that is 3 to 4 times higher than that in the case of using fluorescence emission from singlet excitons.
[0262]
In addition, the structure of a present Example can be implemented in combination with any structure of Example 1- Example 9 freely.
[0263]
(Example 11)
The organic light emitting material is generally formed using an ink jet method, a spin coat method, or a vapor deposition method. In this example, a method for forming an organic light emitting layer other than the above method will be described.
[0264]
In this embodiment, the spraying of a colloidal solution (also called a sol) in which an assembly of molecules constituting the organic light emitting material is dispersed, sprays the molecules of the organic light emitting material onto the substrate in an inert gas atmosphere. A film including the aggregate is formed. The organic light emitting material exists as particles in which several molecules are aggregated in a liquid.
[0265]
FIG. 18 shows an iridium complex, which is an organic light-emitting material, tris (2-phenylpyridine) iridium (Ir (ppy) _Three ) And bathocuproin (BCP) which is an organic light-emitting material (hereinafter referred to as host material) serving as a host in a toluene, a nozzle (not shown) with an inert gas (nitrogen gas in this embodiment) A state in which the organic light emitting layer 650 is formed by being sprayed from is shown.
[0266]
In FIG. 18, the organic light emitting layer 650 is selectively formed with a film thickness of 25 to 40 nm using the mask 651. The iridium complex is insoluble in toluene, and BCP is also insoluble in toluene.
[0267]
Actually, the organic light emitting layer may be used as a single layer or may be used by laminating a plurality of layers. In the case where a plurality of layers are stacked and used, after the organic light emitting layer 650 is formed, another organic light emitting layer is similarly formed and stacked. In this case, all the stacked organic light emitting layers are collectively referred to as an organic light emitting layer.
[0268]
The film forming method of this embodiment is a means capable of forming a film regardless of the state of the organic light emitting material in the liquid. In particular, a high-quality organic light emitting layer is formed using an organic light emitting material that is difficult to dissolve. This is an effective method. Then, since the film is formed by spraying a liquid containing an organic light emitting material using a carrier gas, the film can be formed in a short time. In addition, a method for manufacturing a liquid containing an organic light-emitting material to be ejected can be very simple. In this embodiment, when a film having a desired pattern is formed, the film is formed by using a mask and passing through the opening of the mask. In addition, in order to efficiently use an expensive organic light emitting material, it is possible to collect the organic light emitting material attached to the mask and reuse it.
[0269]
In the ink jet method and the spin coating method, there is a restriction that an organic light emitting material having high solubility in a solvent cannot be used. In addition, the vapor deposition method has a limitation that an organic light emitting material that decomposes itself before vapor deposition cannot be used. However, the film forming method of this embodiment is not limited to the above-described restrictions.
[0270]
As organic light emitting materials suitable for the film forming method of this embodiment, quinacridone, tris (2-phenylpyridine) iridium, bathocuproine, poly (1,4-phenylenevinylene), poly (1,4-naphthalenevinylene), poly (2-phenyl-1,4-phenylene vinylene), polythiophene, poly (3-phenylthiophene), poly (1,4-phenylene), poly (2,7-fluorene) and the like.
[0271]
In addition, the structure of a present Example can be implemented in combination with any structure of Example 1- Example 10 freely.
[0272]
(Example 12)
In this example, FIG. 19A shows a detailed top structure of a pixel portion of the light-emitting device of the present invention, and FIG. 19B shows a circuit diagram thereof. In FIG. 19A and FIG. 19B, common reference numerals are used so that they may be referred to each other.
[0273]
One of a source region and a drain region of the switching TFT 802 is electrically connected to the source wiring 815 and the other is electrically connected to the drain wiring 805. The drain wiring 805 is electrically connected to the gate electrode 807 of the current control TFT 806. One of a source region and a drain region of the current control TFT 806 is electrically connected to the current supply line 816, and the other is electrically connected to the drain wiring 817. Further, the drain wiring 817 is electrically connected to the pixel electrode 818 indicated by a dotted line.
[0274]
At this time, a storage capacitor is formed in the region indicated by 819. The storage capacitor 819 is formed between the semiconductor film 820 electrically connected to the current supply line 816, the insulating film (not shown) in the same layer as the gate insulating film, and the gate electrode 807. A capacitor formed by the gate electrode 807, the same layer (not shown) as the first interlayer insulating film, and the current supply line 816 can also be used as the storage capacitor.
[0275]
This embodiment can be combined with Embodiments 1 to 11.
[0276]
(Example 13)
In this embodiment, a circuit configuration example of the light-emitting device of the present invention is shown in FIG. In this embodiment, a circuit configuration for performing digital driving is shown. In this embodiment, a source side driver circuit 901, a pixel portion 906, and a gate side driver circuit 907 are provided.
[0277]
The source side driver circuit 901 includes a shift register 902, a latch (A) 903, a latch (B) 904, and a buffer 905. In the case of analog driving, a sampling circuit (transfer gate) may be provided instead of the latches (A) and (B). The gate side driver circuit 907 includes a shift register 908 and a buffer 909. The buffer 909 is not necessarily provided.
[0278]
In this embodiment, the pixel portion 906 includes a plurality of pixels, and the plurality of pixels are provided with OLEDs. At this time, the cathode of the OLED is preferably electrically connected to the drain of the current control TFT.
[0279]
The source side driver circuit 901 and the gate side driver circuit 907 are formed of n-channel TFTs or p-channel TFTs obtained in Embodiments 2 to 4.
[0280]
Although not illustrated, a gate side driver circuit may be further provided on the opposite side of the gate side driver circuit 907 with the pixel portion 906 interposed therebetween. In this case, both have the same structure and share the gate wiring, and even if one of them breaks, the gate signal is sent from the remaining one so that the pixel portion operates normally.
[0281]
This embodiment can be combined with Embodiments 1-12.
[0282]
(Example 14)
Since the light-emitting device is a self-luminous type, it has excellent visibility in a bright place and a wide viewing angle compared to a liquid crystal display. Therefore, it can be used for display portions of various electronic devices.
[0283]
As an electronic device using the light emitting device of the present invention, a video camera, a digital camera, a goggle type display (head mounted display), a navigation system, a sound reproduction device (such as a car audio device), a notebook personal computer, a game device, Play back a recording medium such as a portable information terminal (mobile computer, mobile phone, portable game machine or electronic book), an image playback device (specifically a DVD (digital versatile disc)) equipped with a recording medium, A device having a display capable of displaying). In particular, it is desirable to use a light-emitting device for a portable information terminal that often has an opportunity to see a screen from an oblique direction because the wide viewing angle is important. Specific examples of these electronic devices are shown in FIGS.
[0284]
FIG. 21A illustrates a digital still camera, which includes a main body 2101, a display portion 2102, an image receiving portion 2103, operation keys 2104, an external connection port 2105, a shutter 2106, and the like. The light emitting device of the present invention can be used for the display portion 2102.
[0285]
FIG. 21B illustrates a mobile computer, which includes a main body 2301, a display portion 2302, a switch 2303, operation keys 2304, an infrared port 2305, and the like. The light emitting device of the present invention can be used for the display portion 2302.
[0286]
FIG. 21C illustrates a goggle type display (head mounted display), which includes a main body 2501, a display portion 2502, and an arm portion 2503. The light emitting device of the present invention can be used for the display portion 2502.
[0287]
Here, FIG. 21D shows a mobile phone, which includes a main body 2701, a housing 2702, a display portion 2703, an audio input portion 2704, an audio output portion 2705, operation keys 2706, an external connection port 2707, an antenna 2708, and the like. The light emitting device of the present invention can be used for the display portion 2703. Note that the display portion 2703 can reduce power consumption of the mobile phone by displaying white characters on a black background.
[0288]
If the light emission luminance of the organic light emitting material is increased in the future, the light including the output image information can be enlarged and projected by a lens or the like and used in a front type or rear type projector.
[0289]
In addition, the electronic devices often display information distributed through electronic communication lines such as the Internet and CATV (cable television), and in particular, opportunities to display moving image information are increasing. Since the organic light emitting material has a very high response speed, the light emitting device is preferable for displaying moving images.
[0290]
Further, since the light emitting part consumes power in the light emitting device, it is desirable to display information so that the light emitting part is minimized. Therefore, when a light emitting device is used for a display unit mainly including character information, such as a portable information terminal, particularly a mobile phone or a sound reproduction device, it is driven so that character information is formed by the light emitting part with the non-light emitting part as the background. It is desirable to do.
[0291]
As described above, the applicable range of the present invention is so wide that it can be used for electronic devices in various fields. In addition, the electronic apparatus of this embodiment may use the light-emitting device having any structure shown in Embodiments 1 to 13.
[0292]
(Example 15)
Organic light-emitting materials used for OLEDs are roughly classified into low molecular weight systems and high molecular weight systems. The light emitting device of the present invention can be used with either a low molecular weight organic light emitting material or a high molecular weight organic light emitting material.
[0293]
The low molecular weight organic light emitting material is formed by a vapor deposition method. Therefore, it is easy to take a laminated structure, and it is easy to increase the efficiency by laminating films having different functions such as a hole transport layer and an electron transport layer.
[0294]
Low molecular weight organic light-emitting materials include aluminum complex Alq with quinolinol as a ligand. _Three , Triphenylamine derivatives (TPD) and the like.
[0295]
On the other hand, a high molecular organic light emitting material has higher physical strength and higher device durability than a low molecular material. In addition, since the film can be formed by coating, the device can be manufactured relatively easily.
[0296]
The structure of a light emitting element using a high molecular weight organic light emitting material is basically the same as that when a low molecular weight organic light emitting material is used, and is a cathode / organic light emitting layer / anode. However, when forming an organic light emitting layer using a high molecular weight organic light emitting material, it is difficult to form a laminated structure as in the case of using a low molecular weight organic light emitting material. The two-layer structure is famous. Specifically, it has a structure of cathode (Al alloy / light emitting layer / hole transport layer / anode (ITO). In the case of a light emitting device using a polymer organic light emitting material, Ca is used as the cathode material. It is also possible to use.
[0297]
Note that since the color of light emitted from the element is determined by the material for forming the light-emitting layer, a light-emitting element exhibiting desired light emission can be formed by selecting them. Examples of the polymer organic light emitting material that can be used for forming the light emitting layer include polyparaphenylene vinylene, polyparaphenylene, polythiophene, and polyfluorene.
[0298]
The polyparaphenylene vinylene system includes derivatives of poly (paraphenylene vinylene) [PPV], poly (2,5-dialkoxy-1,4-phenylene vinylene) [RO-PPV], poly (2- (2′- Ethyl-hexoxy) -5-methoxy-1,4-phenylenevinylene) [MEH-PPV], poly (2- (dialkoxyphenyl) -1,4-phenylenevinylene) [ROPh-PPV] and the like.
[0299]
The polyparaphenylene series includes derivatives of polyparaphenylene [PPP], poly (2,5-dialkoxy-1,4-phenylene) [RO-PPP], poly (2,5-dihexoxy-1,4-phenylene). ) And the like.
[0300]
The polythiophene series includes polythiophene [PT] derivatives, poly (3-alkylthiophene) [PAT], poly (3-hexylthiophene) [PHT], poly (3-cyclohexylthiophene) [PCHT], poly (3-cyclohexyl). -4-methylthiophene) [PCHMT], poly (3,4-dicyclohexylthiophene) [PDCHT], poly [3- (4-octylphenyl) -thiophene] [POPT], poly [3- (4-octylphenyl) -2,2 bithiophene] [PTOPT] and the like.
[0301]
Examples of the polyfluorene series include polyfluorene [PF] derivatives, poly (9,9-dialkylfluorene) [PDAF], poly (9,9-dioctylfluorene) [PDOF], and the like.
[0302]
Note that when a hole-transporting polymer-based organic light-emitting material is sandwiched between an anode and a light-emitting polymer-based organic light-emitting material, hole injection properties from the anode can be improved. In general, an acceptor material dissolved in water is applied by spin coating or the like. In addition, since it is insoluble in an organic solvent, it can be stacked with the above-described light-emitting organic light-emitting material.
[0303]
Examples of the hole-transporting polymer organic light emitting material include a mixture of PEDOT and camphor sulfonic acid (CSA) as an acceptor material, a mixture of polyaniline [PANI] and polystyrene sulfonic acid [PSS] as an acceptor material, and the like. It is done.
[0304]
In addition, the structure of a present Example can be implemented in combination freely with any structure of Example 1-14.
[0305]
【The invention's effect】
In the present invention, by vacuum sealing the entire substrate on which the OLED is provided with a plastic film having a sealing film, the effect of preventing the deterioration of the OLED due to moisture and oxygen is increased, and the stability of the OLED can be improved. . Therefore, a highly reliable light-emitting device can be obtained.
[0306]
In the present invention, by laminating a plurality of inorganic insulating films, even if cracks occur in the inorganic insulating film, it is possible to effectively prevent moisture and oxygen from being mixed into the organic light emitting layer in the other inorganic insulating films. Furthermore, even if the film quality of the inorganic insulating film may deteriorate due to the low film formation temperature, it is possible to effectively mix moisture and oxygen into the organic light emitting layer by laminating a plurality of inorganic insulating films. Can be prevented.
[0307]
Further, by sandwiching an organic insulating film having a smaller internal stress than the inorganic insulating film between the organic insulating films, the internal stress of the entire insulating film can be reduced. Therefore, even if the total thickness of the inorganic insulating film is the same, the inorganic insulating film with the organic insulating film interposed therebetween is less susceptible to cracks due to internal stress than the single-layered inorganic insulating film.
[0308]
Therefore, even when the total thickness of the inorganic insulating film is the same as that of the inorganic insulating film having only one layer, it is possible to effectively prevent moisture and oxygen from being mixed into the organic light emitting layer. Hard to crack due to stress.
[Brief description of the drawings]
1A and 1B are a top view and a cross-sectional view of a light-emitting device of the present invention.
FIG. 2 is a diagram of a sealing film forming apparatus.
FIG. 3 is a diagram showing a sealing method of a light emitting device of the present invention.
4A and 4B illustrate a method for manufacturing a light-emitting device of the present invention.
FIGS. 5A and 5B illustrate a method for manufacturing a light-emitting device of the present invention. FIGS.
6A and 6B illustrate a method for manufacturing a light-emitting device of the present invention.
7A and 7B illustrate a method for manufacturing a light-emitting device of the present invention.
FIG. 8 is an external view of a light emitting device before sealing according to the present invention, and an enlarged view and a cross-sectional view of a connection portion with an FPC.
FIGS. 9A and 9B are a diagram illustrating a state in which the light-emitting device of the present invention is bent, and a cross-sectional view thereof.
FIG. 10 is a cross-sectional view of a portion where the light emitting device of the present invention is connected to an FPC before sealing.
11A to 11C illustrate a method for manufacturing a light-emitting device of the present invention.
12A to 12C illustrate a method for manufacturing a light-emitting device of the present invention.
FIGS. 13A and 13B are diagrams showing manufacturing steps of a TFT and an OLED of a light emitting device of the present invention. FIGS.
FIGS. 14A and 14B are diagrams showing a manufacturing process of a TFT and an OLED of a light emitting device of the present invention. FIGS.
FIGS. 15A and 15B are diagrams showing manufacturing steps of a TFT and an OLED of a light emitting device of the present invention. FIGS.
FIG. 16 is a cross-sectional view of a light-emitting device of the present invention.
FIG. 17 is a diagram showing a state where an adhesive layer is removed by a water jet method.
FIG. 18 is a diagram illustrating a state where an organic light emitting layer is formed by spraying.
FIG. 19 is a top view of a pixel and a circuit diagram of the pixel.
FIG 20 illustrates a circuit configuration of a light-emitting device.
FIG. 21 is a diagram of an electronic device using the light-emitting device of the present invention.

Claims (32)

A first plastic substrate and a second plastic substrate each having a light emitting element formed therebetween are placed in a flexible bag-shaped plastic film in which a plurality of insulating films are laminated on the inside,
Exhaust the inside of the plastic film,
A method for producing a light emitting device for sealing the mouth of the plastic film,
The method for manufacturing a light-emitting device, wherein at least one insulating film among the plurality of insulating films has an internal stress smaller than that of the other insulating films. Put a plastic substrate with a light emitting element formed on one side inside a flexible bag-shaped plastic film in which a plurality of insulating films are laminated inside,
Exhaust the inside of the plastic film,
A method for producing a light emitting device for sealing the mouth of the plastic film,
The method for manufacturing a light-emitting device, wherein at least one insulating film among the plurality of insulating films has an internal stress smaller than that of the other insulating films.   3. The method for manufacturing a light-emitting device according to claim 1, wherein the plastic substrate includes polyethersulfone, polycarbonate, polyethylene terephthalate, or polyethylene naphthalate. Forming a first adhesive layer on the first substrate;
Forming a first insulating film on the first adhesive layer;
Forming a light emitting element on the first insulating film;
Forming a second insulating film covering the light emitting element;
A second substrate is bonded to the second insulating film with a second adhesive layer,
By removing the first adhesive layer, the first substrate is removed to expose the first insulating film,
Bonding a third substrate and the first insulating film with a third adhesive layer,
A flexible bag-like plastic film having a plurality of laminated insulating films formed inside so as to cover the second substrate and the third substrate with the laminated insulating films. Provided,
Exhaust the inside of the plastic film,
A method for producing a light emitting device for sealing the mouth of the plastic film,
The second substrate and the third substrate are made of plastic,
The method for manufacturing a light-emitting device, wherein at least one insulating film among the plurality of insulating films has an internal stress smaller than that of the other insulating films. Forming a first adhesive layer on the first substrate;
Forming a first insulating film on the first adhesive layer;
Forming a light emitting element, a thin film transistor and a wiring on the first insulating film;
Forming a second insulating film covering the light emitting element, the thin film transistor and the wiring;
A second substrate and the second insulating film are bonded with a second adhesive layer,
By removing the first adhesive layer, the first substrate is removed to expose the first insulating film,
Bonding a third substrate and the first insulating film with a third adhesive layer,
A part of the wiring is exposed by removing a part of the second substrate, the second insulating film, and the second adhesive layer, and the wiring is formed using an anisotropic conductive resin. Electrically connecting a part and the terminal of the FPC,
A flexible bag-like plastic film having a plurality of laminated insulating films formed inside so as to cover the second substrate and the third substrate with the laminated insulating films. Provided,
Exhaust the inside of the plastic film,
A method for producing a light emitting device for sealing the mouth of the plastic film,
The second substrate and the third substrate are made of plastic,
The method for manufacturing a light-emitting device, wherein at least one insulating film among the plurality of insulating films has an internal stress smaller than that of the other insulating films. Forming a first adhesive layer on the first substrate;
Forming a first insulating film on the first adhesive layer;
Forming a light emitting element, a thin film transistor and a wiring on the first insulating film;
Forming a second insulating film covering the light emitting element, the thin film transistor and the wiring;
A second substrate and the second insulating film are bonded with a second adhesive layer,
By removing the first adhesive layer, the first substrate is removed to expose the first insulating film,
Bonding a third substrate and the first insulating film with a third adhesive layer,
A part of the wiring is exposed by removing a part of the third substrate, the first insulating film, and the third adhesive layer, and the wiring is formed using an anisotropic conductive resin. Electrically connecting a part and the terminal of the FPC,
A flexible bag-like plastic film having a plurality of laminated insulating films formed inside so as to cover the second substrate and the third substrate with the laminated insulating films. Provided,
Exhaust the inside of the plastic film,
A method for producing a light emitting device for sealing the mouth of the plastic film,
The second substrate and the third substrate are made of plastic,
The method for manufacturing a light-emitting device, wherein at least one insulating film among the plurality of insulating films has an internal stress smaller than that of the other insulating films.   7. The method for manufacturing a light-emitting device according to claim 4, wherein the first adhesive layer is removed by spraying a fluid onto the first adhesive layer.   The method for manufacturing a light-emitting device according to claim 4, wherein the first adhesive layer includes silicon.   9. The method for manufacturing a light-emitting device according to claim 8, wherein the first adhesive layer is removed using halogen fluoride.   The method for manufacturing a light-emitting device according to claim 4, wherein the first adhesive layer includes SOG.   The method for manufacturing a light-emitting device according to claim 10, wherein the first adhesive layer is removed using hydrogen fluoride.   7. The method for manufacturing a light-emitting device according to claim 4, wherein the first adhesive layer is removed using a laser beam. The method for manufacturing a light-emitting device according to claim 12, wherein the laser light is a pulse oscillation type or a continuous emission type excimer laser, a YAG laser, or a YVO ₄ laser.   The method for manufacturing a light-emitting device according to claim 12, wherein the laser light is a fundamental wave, a second harmonic, or a third harmonic of a YAG laser.   15. The method according to claim 4, wherein the second substrate, the third substrate, or the plastic film includes polyethersulfone, polycarbonate, polyethylene terephthalate, or polyethylene naphthalate. A method for manufacturing a light-emitting device.   16. The light emitting device according to claim 4, wherein the plastic film includes polyester, polypropylene, polyvinyl chloride, polyvinyl fluoride, polystyrene, polyacrylonitrile, polyethylene terephthalate, or nylon. Manufacturing method. Forming a first adhesive layer on the first substrate;
Forming a first insulating film on the first adhesive layer;
Forming a light emitting element on the first insulating film;
Forming a second insulating film covering the light emitting element;
A second substrate and the second insulating film are bonded with a second adhesive layer,
By removing the first adhesive layer, the first substrate is removed to expose the first insulating film,
Bonding a third substrate and the first insulating film with a third adhesive layer,
By removing the second adhesive layer, the second substrate is removed to expose the second insulating film,
A flexible bag-like plastic film in which the plurality of laminated insulating films are formed inside so as to cover the third substrate and the second insulating film with the plurality of laminated insulating films. Provided,
Exhaust the inside of the plastic film,
A method for producing a light emitting device for sealing the mouth of the plastic film,
The third substrate is made of plastic;
The method for manufacturing a light-emitting device, wherein at least one insulating film among the plurality of insulating films has an internal stress smaller than that of the other insulating films. Forming a first adhesive layer on the first substrate;
Forming a first insulating film on the first adhesive layer;
Forming a light emitting element, a thin film transistor and a wiring on the first insulating film;
Forming a second insulating film covering the light emitting element, the thin film transistor and the wiring;
A second substrate and the second insulating film are bonded with a second adhesive layer,
By removing the first adhesive layer, the first substrate is removed to expose the first insulating film,
Bonding a third substrate and the first insulating film with a third adhesive layer,
By removing the second adhesive layer, the second substrate is removed to expose the second insulating film,
A part of the wiring is exposed by removing a part of the second insulating film, and a part of the wiring and a terminal of the FPC are electrically connected using an anisotropic conductive resin. connection,
A flexible bag-like plastic film in which the plurality of laminated insulating films are formed inside so as to cover the third substrate and the second insulating film with the plurality of laminated insulating films. Provided,
Exhaust the inside of the plastic film,
A method for producing a light emitting device for sealing the mouth of the plastic film,
The third substrate is made of plastic;
The method for manufacturing a light-emitting device, wherein at least one insulating film among the plurality of insulating films has an internal stress smaller than that of the other insulating films. Forming a first adhesive layer on the first substrate;
Forming a first insulating film on the first adhesive layer;
Forming a light emitting element, a thin film transistor and a wiring on the first insulating film;
Forming a second insulating film covering the light emitting element, the thin film transistor and the wiring;
A second substrate and the second insulating film are bonded with a second adhesive layer,
By removing the first adhesive layer, the first substrate is removed to expose the first insulating film,
Bonding a third substrate and the first insulating film with a third adhesive layer,
By removing the second adhesive layer, the second substrate is removed to expose the second insulating film,
A part of the wiring is exposed by removing a part of the third substrate, the first insulating film, and the third adhesive layer, and the wiring is formed using an anisotropic conductive resin. Electrically connecting a part and the terminal of the FPC,
A flexible bag-like plastic film in which the plurality of laminated insulating films are formed inside so as to cover the third substrate and the second insulating film with the plurality of laminated insulating films. Provided,
Exhaust the inside of the plastic film,
A method for producing a light emitting device for sealing the mouth of the plastic film,
The third substrate is made of plastic;
The method for manufacturing a light-emitting device, wherein at least one insulating film among the plurality of insulating films has an internal stress smaller than that of the other insulating films.   20. The method for manufacturing a light-emitting device according to claim 17, wherein one of the first adhesive layer and the second adhesive layer is removed by spraying a fluid. .   20. The method for manufacturing a light-emitting device according to claim 17, wherein the first adhesive layer includes silicon.   24. The method for manufacturing a light-emitting device according to claim 21, wherein the first adhesive layer is removed using halogen fluoride.   20. The method for manufacturing a light-emitting device according to claim 17, wherein the first adhesive layer includes SOG.   24. The method for manufacturing a light-emitting device according to claim 23, wherein the first adhesive layer is removed using hydrogen fluoride.   20. The method for manufacturing a light-emitting device according to claim 17, wherein any one of the first adhesive layer and the second adhesive layer is removed using a laser beam. 26. The method for manufacturing a light-emitting device according to claim 25, wherein the laser beam is a pulse oscillation type or a continuous emission type excimer laser, a YAG laser, or a YVO ₄ laser.   26. The method for manufacturing a light-emitting device according to claim 25, wherein the laser light is a fundamental wave, a second harmonic, or a third harmonic of a YAG laser.   28. The method for manufacturing a light-emitting device according to any one of claims 17 to 27, wherein the third substrate includes polyethersulfone, polycarbonate, polyethylene terephthalate, or polyethylene naphthalate.   29. The light-emitting device according to claim 17, wherein the plastic film includes polyester, polypropylene, polyvinyl chloride, polyvinyl fluoride, polystyrene, polyacrylonitrile, polyethylene terephthalate, or nylon. Driving method. Characterized in any one of claims 1 to 29, among the plurality of insulating films, wherein at least one insulating film, polyimide, acrylic, polyamide, to have a polyimide amide, benzocyclobutene or epoxy resin A method for manufacturing a light-emitting device. 31. In any one of claims 1 to 30, among the plurality of insulating films, the at least one insulating film is made of polyethylene, polytetrafluoroethylene, polystyrene, benzocyclobutene, or poly (p-phenylene vinylene). A method for manufacturing a light-emitting device, comprising: a polyvinyl chloride or a polyparaxylylene resin. 32. In any one of claims 1 to 31, the other insulating film among the plurality of insulating films is silicon nitride, silicon nitride oxide, aluminum oxide, aluminum nitride, aluminum nitride oxide, or aluminum nitride oxide silicide. A method for manufacturing a light-emitting device, comprising:

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