JP2008211144A5 - - Google Patents
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- JP2008211144A5 JP2008211144A5 JP2007048996A JP2007048996A JP2008211144A5 JP 2008211144 A5 JP2008211144 A5 JP 2008211144A5 JP 2007048996 A JP2007048996 A JP 2007048996A JP 2007048996 A JP2007048996 A JP 2007048996A JP 2008211144 A5 JP2008211144 A5 JP 2008211144A5
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- 239000004065 semiconductor Substances 0.000 claims 18
- 239000012535 impurity Substances 0.000 claims 13
- 238000005530 etching Methods 0.000 claims 5
- 238000004519 manufacturing process Methods 0.000 claims 5
- 229910052751 metal Inorganic materials 0.000 claims 5
- 239000002184 metal Substances 0.000 claims 5
- 238000000034 method Methods 0.000 claims 5
- 230000015572 biosynthetic process Effects 0.000 claims 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims 1
- 239000000956 alloy Substances 0.000 claims 1
- 229910017052 cobalt Inorganic materials 0.000 claims 1
- 239000010941 cobalt Substances 0.000 claims 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims 1
- 238000010438 heat treatment Methods 0.000 claims 1
- 229910052759 nickel Inorganic materials 0.000 claims 1
- 229910052697 platinum Inorganic materials 0.000 claims 1
- 229910021332 silicide Inorganic materials 0.000 claims 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical group [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims 1
- 229910052719 titanium Inorganic materials 0.000 claims 1
- 239000010936 titanium Substances 0.000 claims 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007048996A JP5337347B2 (ja) | 2007-02-28 | 2007-02-28 | 半導体装置、半導体装置の作製方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007048996A JP5337347B2 (ja) | 2007-02-28 | 2007-02-28 | 半導体装置、半導体装置の作製方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2008211144A JP2008211144A (ja) | 2008-09-11 |
| JP2008211144A5 true JP2008211144A5 (enExample) | 2010-04-02 |
| JP5337347B2 JP5337347B2 (ja) | 2013-11-06 |
Family
ID=39787165
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2007048996A Active JP5337347B2 (ja) | 2007-02-28 | 2007-02-28 | 半導体装置、半導体装置の作製方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP5337347B2 (enExample) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101931206B1 (ko) * | 2009-11-13 | 2018-12-21 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 그 제작 방법 |
| WO2012014786A1 (en) * | 2010-07-30 | 2012-02-02 | Semiconductor Energy Laboratory Co., Ltd. | Semicondcutor device and manufacturing method thereof |
| US8735231B2 (en) * | 2010-08-26 | 2014-05-27 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing method of dual-gate thin film transistor |
| TWI602303B (zh) * | 2011-01-26 | 2017-10-11 | 半導體能源研究所股份有限公司 | 半導體裝置及其製造方法 |
| US9117916B2 (en) * | 2011-10-13 | 2015-08-25 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device comprising oxide semiconductor film |
| US9048323B2 (en) | 2012-04-30 | 2015-06-02 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03153081A (ja) * | 1989-11-10 | 1991-07-01 | Nippon Soken Inc | 電界効果型トランジスタおよびその製造方法 |
| JP3103159B2 (ja) * | 1991-07-08 | 2000-10-23 | 株式会社東芝 | 半導体装置 |
| JP2004296491A (ja) * | 2003-03-25 | 2004-10-21 | Sanyo Electric Co Ltd | 半導体装置 |
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2007
- 2007-02-28 JP JP2007048996A patent/JP5337347B2/ja active Active