JP2010533983A5 - - Google Patents

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Publication number
JP2010533983A5
JP2010533983A5 JP2010517173A JP2010517173A JP2010533983A5 JP 2010533983 A5 JP2010533983 A5 JP 2010533983A5 JP 2010517173 A JP2010517173 A JP 2010517173A JP 2010517173 A JP2010517173 A JP 2010517173A JP 2010533983 A5 JP2010533983 A5 JP 2010533983A5
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JP
Japan
Prior art keywords
metal
silicide
forming
layer
gate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2010517173A
Other languages
English (en)
Japanese (ja)
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JP2010533983A (ja
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Publication date
Application filed filed Critical
Priority claimed from PCT/US2008/070389 external-priority patent/WO2009012423A1/en
Publication of JP2010533983A publication Critical patent/JP2010533983A/ja
Publication of JP2010533983A5 publication Critical patent/JP2010533983A5/ja
Pending legal-status Critical Current

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JP2010517173A 2007-07-17 2008-07-17 シード印刷及びめっきによるコンタクト金属及び相互接続金属の印刷 Pending JP2010533983A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US95997707P 2007-07-17 2007-07-17
PCT/US2008/070389 WO2009012423A1 (en) 2007-07-17 2008-07-17 Printing of contact metal and interconnect metal via seed printing and plating

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2014079578A Division JP6073829B2 (ja) 2007-07-17 2014-04-08 シード印刷及びめっきによるコンタクト金属及び相互接続金属の印刷

Publications (2)

Publication Number Publication Date
JP2010533983A JP2010533983A (ja) 2010-10-28
JP2010533983A5 true JP2010533983A5 (enExample) 2011-08-11

Family

ID=40260086

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2010517173A Pending JP2010533983A (ja) 2007-07-17 2008-07-17 シード印刷及びめっきによるコンタクト金属及び相互接続金属の印刷
JP2014079578A Active JP6073829B2 (ja) 2007-07-17 2014-04-08 シード印刷及びめっきによるコンタクト金属及び相互接続金属の印刷

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2014079578A Active JP6073829B2 (ja) 2007-07-17 2014-04-08 シード印刷及びめっきによるコンタクト金属及び相互接続金属の印刷

Country Status (6)

Country Link
US (2) US8158518B2 (enExample)
EP (1) EP2168165A4 (enExample)
JP (2) JP2010533983A (enExample)
KR (1) KR101578229B1 (enExample)
CN (1) CN101755339A (enExample)
WO (1) WO2009012423A1 (enExample)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010533983A (ja) * 2007-07-17 2010-10-28 コヴィオ インコーポレイテッド シード印刷及びめっきによるコンタクト金属及び相互接続金属の印刷
US8099707B1 (en) * 2008-03-17 2012-01-17 Kovio, Inc. Field configured electronic circuits and methods of making the same
US7667304B2 (en) * 2008-04-28 2010-02-23 National Semiconductor Corporation Inkjet printed leadframes
US8053867B2 (en) 2008-08-20 2011-11-08 Honeywell International Inc. Phosphorous-comprising dopants and methods for forming phosphorous-doped regions in semiconductor substrates using phosphorous-comprising dopants
US7951696B2 (en) 2008-09-30 2011-05-31 Honeywell International Inc. Methods for simultaneously forming N-type and P-type doped regions using non-contact printing processes
US8424176B2 (en) * 2008-11-25 2013-04-23 Kovio, Inc. Methods of forming tunable capacitors
US8518170B2 (en) 2008-12-29 2013-08-27 Honeywell International Inc. Boron-comprising inks for forming boron-doped regions in semiconductor substrates using non-contact printing processes and methods for fabricating such boron-comprising inks
US8324089B2 (en) 2009-07-23 2012-12-04 Honeywell International Inc. Compositions for forming doped regions in semiconductor substrates, methods for fabricating such compositions, and methods for forming doped regions using such compositions
US8669169B2 (en) 2010-09-01 2014-03-11 Piquant Research Llc Diffusion sources from liquid precursors
US8629294B2 (en) 2011-08-25 2014-01-14 Honeywell International Inc. Borate esters, boron-comprising dopants, and methods of fabricating boron-comprising dopants
US8975170B2 (en) 2011-10-24 2015-03-10 Honeywell International Inc. Dopant ink compositions for forming doped regions in semiconductor substrates, and methods for fabricating dopant ink compositions
JP5637204B2 (ja) * 2012-12-10 2014-12-10 トヨタ自動車株式会社 シリコンカーバイトウエハの検査方法及び検査装置
WO2015093455A1 (ja) * 2013-12-16 2015-06-25 国立大学法人北陸先端科学技術大学院大学 半導体素子及びその製造方法、並びに脂肪族ポリカーボネート
JP6436531B2 (ja) * 2015-01-30 2018-12-12 住友電工デバイス・イノベーション株式会社 半導体装置の製造方法
WO2016205722A1 (en) * 2015-06-17 2016-12-22 Stc.Unm Metal matrix composites for contacts on solar cells
US12074228B2 (en) 2015-06-17 2024-08-27 Unm Rainforest Innovations Metal-carbon-nanotube metal matrix composites for metal contacts on photovoltaic cells
US9799617B1 (en) 2016-07-27 2017-10-24 Nxp Usa, Inc. Methods for repackaging copper wire-bonded microelectronic die
TWI681447B (zh) * 2017-09-26 2020-01-01 穩懋半導體股份有限公司 耐高溫之化合物半導體基板之背面金屬改良結構
RU2688861C1 (ru) * 2018-03-12 2019-05-22 Федеральное государственное бюджетное образовательное учреждение высшего образования "Кабардино-Балкарский государственный университет им. Х.М. Бербекова" (КБГУ) Способ изготовления полупроводникового прибора
US11259402B1 (en) 2020-09-08 2022-02-22 United States Of America As Represented By The Secretary Of The Air Force Fabrication of electrical and/or optical crossover signal lines through direct write deposition techniques
CN112201615B (zh) * 2020-09-09 2024-04-19 长江存储科技有限责任公司 半导体器件的焊盘制造方法及半导体器件制造方法
JP2024104919A (ja) * 2023-01-25 2024-08-06 タカノ株式会社 シリコン構造体の製造方法
CN116936475B (zh) * 2023-09-15 2023-12-22 粤芯半导体技术股份有限公司 半导体器件制备方法

Family Cites Families (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2552159B2 (ja) * 1987-02-02 1996-11-06 セイコーエプソン株式会社 半導体装置及びその製造方法
JPH01136373A (ja) * 1987-11-24 1989-05-29 Nippon Telegr & Teleph Corp <Ntt> 薄膜型半導体装置の製法
JPH02224340A (ja) * 1989-02-27 1990-09-06 Seiko Epson Corp 薄膜トランジスタの製造方法
US6479837B1 (en) 1998-07-06 2002-11-12 Matsushita Electric Industrial Co., Ltd. Thin film transistor and liquid crystal display unit
JP3346284B2 (ja) * 1998-07-06 2002-11-18 松下電器産業株式会社 薄膜トランジスタ及びその製造方法
KR100420030B1 (ko) 2001-04-23 2004-02-25 삼성에스디아이 주식회사 태양 전지의 제조 방법
US6524880B2 (en) 2001-04-23 2003-02-25 Samsung Sdi Co., Ltd. Solar cell and method for fabricating the same
EP1529317A2 (en) * 2002-08-06 2005-05-11 Avecia Limited Organic electronic devices
US6911385B1 (en) * 2002-08-22 2005-06-28 Kovio, Inc. Interface layer for the fabrication of electronic devices
US7102155B2 (en) * 2003-09-04 2006-09-05 Hitachi, Ltd. Electrode substrate, thin film transistor, display device and their production
JP2005260040A (ja) * 2004-02-12 2005-09-22 Sony Corp ドーピング方法、半導体装置の製造方法および電子応用装置の製造方法
US7785922B2 (en) * 2004-04-30 2010-08-31 Nanosys, Inc. Methods for oriented growth of nanowires on patterned substrates
US20060163744A1 (en) * 2005-01-14 2006-07-27 Cabot Corporation Printable electrical conductors
WO2006076606A2 (en) * 2005-01-14 2006-07-20 Cabot Corporation Optimized multi-layer printing of electronics and displays
US8461628B2 (en) 2005-03-18 2013-06-11 Kovio, Inc. MOS transistor with laser-patterned metal gate, and method for making the same
JP4636921B2 (ja) * 2005-03-30 2011-02-23 セイコーエプソン株式会社 表示装置の製造方法、表示装置および電子機器
JP2007142022A (ja) * 2005-11-16 2007-06-07 Seiko Epson Corp 金属配線とその製造方法、薄膜トランジスタ、電気光学装置、及び電子機器
JP2007139995A (ja) * 2005-11-17 2007-06-07 Hitachi Displays Ltd 表示装置およびその製造方法
US20070169806A1 (en) * 2006-01-20 2007-07-26 Palo Alto Research Center Incorporated Solar cell production using non-contact patterning and direct-write metallization
US20070107773A1 (en) * 2005-11-17 2007-05-17 Palo Alto Research Center Incorporated Bifacial cell with extruded gridline metallization
KR101163791B1 (ko) * 2006-05-16 2012-07-10 삼성전자주식회사 유기 전자소자의 전극형성 방법, 이에 의해 형성된 전극을포함하는 유기박막 트랜지스터 및 이를 포함하는 표시소자
US7691691B1 (en) * 2006-05-23 2010-04-06 Kovio, Inc. Semiconductor device and methods for making the same
US8796125B2 (en) * 2006-06-12 2014-08-05 Kovio, Inc. Printed, self-aligned, top gate thin film transistor
EP1890322A3 (en) * 2006-08-15 2012-02-15 Kovio, Inc. Printed dopant layers
US7709307B2 (en) * 2006-08-24 2010-05-04 Kovio, Inc. Printed non-volatile memory
JP2010533983A (ja) * 2007-07-17 2010-10-28 コヴィオ インコーポレイテッド シード印刷及びめっきによるコンタクト金属及び相互接続金属の印刷
US7977240B1 (en) * 2008-02-13 2011-07-12 Kovio, Inc. Metal inks for improved contact resistance

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