CN101755339A - 经由种子印刷和镀覆进行的接触金属和互连金属的印刷 - Google Patents

经由种子印刷和镀覆进行的接触金属和互连金属的印刷 Download PDF

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Publication number
CN101755339A
CN101755339A CN200880024999A CN200880024999A CN101755339A CN 101755339 A CN101755339 A CN 101755339A CN 200880024999 A CN200880024999 A CN 200880024999A CN 200880024999 A CN200880024999 A CN 200880024999A CN 101755339 A CN101755339 A CN 101755339A
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China
Prior art keywords
metal
silicide
ink
dielectric
silicon
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Pending
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CN200880024999A
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Chinese (zh)
Inventor
阿迪提·钱德拉
阿尔万德·卡玛斯
詹姆斯·蒙塔格·克里夫斯
约尔格·罗克恩伯格
高岛真穗
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Kovio Inc
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Kovio Inc
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Publication of CN101755339A publication Critical patent/CN101755339A/zh
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
    • H01L21/28518—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table the conductive layers comprising silicides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/32051—Deposition of metallic or metal-silicide layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/32051—Deposition of metallic or metal-silicide layers
    • H01L21/32053—Deposition of metallic or metal-silicide layers of metal-silicide layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76841—Barrier, adhesion or liner layers
    • H01L21/76871—Layers specifically deposited to enhance or enable the nucleation of further layers, i.e. seed layers
    • H01L21/76873—Layers specifically deposited to enhance or enable the nucleation of further layers, i.e. seed layers for electroplating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76895—Local interconnects; Local pads, as exemplified by patent document EP0896365
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H10D30/6713—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/6737—Thin-film transistors [TFT] characterised by the electrodes characterised by the electrode materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6741—Group IV materials, e.g. germanium or silicon carbide
    • H10D30/6743—Silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0221—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies
    • H10D86/0223—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies comprising crystallisation of amorphous, microcrystalline or polycrystalline semiconductor materials
    • H10D86/0229—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies comprising crystallisation of amorphous, microcrystalline or polycrystalline semiconductor materials characterised by control of the annealing or irradiation parameters
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0241—Manufacture or treatment of multiple TFTs using liquid deposition, e.g. printing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Thin Film Transistor (AREA)
CN200880024999A 2007-07-17 2008-07-17 经由种子印刷和镀覆进行的接触金属和互连金属的印刷 Pending CN101755339A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US95997707P 2007-07-17 2007-07-17
US60/959,977 2007-07-17
PCT/US2008/070389 WO2009012423A1 (en) 2007-07-17 2008-07-17 Printing of contact metal and interconnect metal via seed printing and plating

Publications (1)

Publication Number Publication Date
CN101755339A true CN101755339A (zh) 2010-06-23

Family

ID=40260086

Family Applications (1)

Application Number Title Priority Date Filing Date
CN200880024999A Pending CN101755339A (zh) 2007-07-17 2008-07-17 经由种子印刷和镀覆进行的接触金属和互连金属的印刷

Country Status (6)

Country Link
US (2) US8158518B2 (enExample)
EP (1) EP2168165A4 (enExample)
JP (2) JP2010533983A (enExample)
KR (1) KR101578229B1 (enExample)
CN (1) CN101755339A (enExample)
WO (1) WO2009012423A1 (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112201615A (zh) * 2020-09-09 2021-01-08 长江存储科技有限责任公司 半导体器件的焊盘制造方法及半导体器件制造方法
CN116936475A (zh) * 2023-09-15 2023-10-24 粤芯半导体技术股份有限公司 半导体器件制备方法

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010533983A (ja) * 2007-07-17 2010-10-28 コヴィオ インコーポレイテッド シード印刷及びめっきによるコンタクト金属及び相互接続金属の印刷
US8099707B1 (en) * 2008-03-17 2012-01-17 Kovio, Inc. Field configured electronic circuits and methods of making the same
US7667304B2 (en) * 2008-04-28 2010-02-23 National Semiconductor Corporation Inkjet printed leadframes
US8053867B2 (en) 2008-08-20 2011-11-08 Honeywell International Inc. Phosphorous-comprising dopants and methods for forming phosphorous-doped regions in semiconductor substrates using phosphorous-comprising dopants
US7951696B2 (en) 2008-09-30 2011-05-31 Honeywell International Inc. Methods for simultaneously forming N-type and P-type doped regions using non-contact printing processes
US8424176B2 (en) * 2008-11-25 2013-04-23 Kovio, Inc. Methods of forming tunable capacitors
US8518170B2 (en) 2008-12-29 2013-08-27 Honeywell International Inc. Boron-comprising inks for forming boron-doped regions in semiconductor substrates using non-contact printing processes and methods for fabricating such boron-comprising inks
US8324089B2 (en) 2009-07-23 2012-12-04 Honeywell International Inc. Compositions for forming doped regions in semiconductor substrates, methods for fabricating such compositions, and methods for forming doped regions using such compositions
US8669169B2 (en) 2010-09-01 2014-03-11 Piquant Research Llc Diffusion sources from liquid precursors
US8629294B2 (en) 2011-08-25 2014-01-14 Honeywell International Inc. Borate esters, boron-comprising dopants, and methods of fabricating boron-comprising dopants
US8975170B2 (en) 2011-10-24 2015-03-10 Honeywell International Inc. Dopant ink compositions for forming doped regions in semiconductor substrates, and methods for fabricating dopant ink compositions
JP5637204B2 (ja) * 2012-12-10 2014-12-10 トヨタ自動車株式会社 シリコンカーバイトウエハの検査方法及び検査装置
WO2015093455A1 (ja) * 2013-12-16 2015-06-25 国立大学法人北陸先端科学技術大学院大学 半導体素子及びその製造方法、並びに脂肪族ポリカーボネート
JP6436531B2 (ja) * 2015-01-30 2018-12-12 住友電工デバイス・イノベーション株式会社 半導体装置の製造方法
WO2016205722A1 (en) * 2015-06-17 2016-12-22 Stc.Unm Metal matrix composites for contacts on solar cells
US12074228B2 (en) 2015-06-17 2024-08-27 Unm Rainforest Innovations Metal-carbon-nanotube metal matrix composites for metal contacts on photovoltaic cells
US9799617B1 (en) 2016-07-27 2017-10-24 Nxp Usa, Inc. Methods for repackaging copper wire-bonded microelectronic die
TWI681447B (zh) * 2017-09-26 2020-01-01 穩懋半導體股份有限公司 耐高溫之化合物半導體基板之背面金屬改良結構
RU2688861C1 (ru) * 2018-03-12 2019-05-22 Федеральное государственное бюджетное образовательное учреждение высшего образования "Кабардино-Балкарский государственный университет им. Х.М. Бербекова" (КБГУ) Способ изготовления полупроводникового прибора
US11259402B1 (en) 2020-09-08 2022-02-22 United States Of America As Represented By The Secretary Of The Air Force Fabrication of electrical and/or optical crossover signal lines through direct write deposition techniques
JP2024104919A (ja) * 2023-01-25 2024-08-06 タカノ株式会社 シリコン構造体の製造方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070107773A1 (en) * 2005-11-17 2007-05-17 Palo Alto Research Center Incorporated Bifacial cell with extruded gridline metallization

Family Cites Families (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2552159B2 (ja) * 1987-02-02 1996-11-06 セイコーエプソン株式会社 半導体装置及びその製造方法
JPH01136373A (ja) * 1987-11-24 1989-05-29 Nippon Telegr & Teleph Corp <Ntt> 薄膜型半導体装置の製法
JPH02224340A (ja) * 1989-02-27 1990-09-06 Seiko Epson Corp 薄膜トランジスタの製造方法
US6479837B1 (en) 1998-07-06 2002-11-12 Matsushita Electric Industrial Co., Ltd. Thin film transistor and liquid crystal display unit
JP3346284B2 (ja) * 1998-07-06 2002-11-18 松下電器産業株式会社 薄膜トランジスタ及びその製造方法
KR100420030B1 (ko) 2001-04-23 2004-02-25 삼성에스디아이 주식회사 태양 전지의 제조 방법
US6524880B2 (en) 2001-04-23 2003-02-25 Samsung Sdi Co., Ltd. Solar cell and method for fabricating the same
EP1529317A2 (en) * 2002-08-06 2005-05-11 Avecia Limited Organic electronic devices
US6911385B1 (en) * 2002-08-22 2005-06-28 Kovio, Inc. Interface layer for the fabrication of electronic devices
US7102155B2 (en) * 2003-09-04 2006-09-05 Hitachi, Ltd. Electrode substrate, thin film transistor, display device and their production
JP2005260040A (ja) * 2004-02-12 2005-09-22 Sony Corp ドーピング方法、半導体装置の製造方法および電子応用装置の製造方法
US7785922B2 (en) * 2004-04-30 2010-08-31 Nanosys, Inc. Methods for oriented growth of nanowires on patterned substrates
US20060163744A1 (en) * 2005-01-14 2006-07-27 Cabot Corporation Printable electrical conductors
WO2006076606A2 (en) * 2005-01-14 2006-07-20 Cabot Corporation Optimized multi-layer printing of electronics and displays
US8461628B2 (en) 2005-03-18 2013-06-11 Kovio, Inc. MOS transistor with laser-patterned metal gate, and method for making the same
JP4636921B2 (ja) * 2005-03-30 2011-02-23 セイコーエプソン株式会社 表示装置の製造方法、表示装置および電子機器
JP2007142022A (ja) * 2005-11-16 2007-06-07 Seiko Epson Corp 金属配線とその製造方法、薄膜トランジスタ、電気光学装置、及び電子機器
JP2007139995A (ja) * 2005-11-17 2007-06-07 Hitachi Displays Ltd 表示装置およびその製造方法
US20070169806A1 (en) * 2006-01-20 2007-07-26 Palo Alto Research Center Incorporated Solar cell production using non-contact patterning and direct-write metallization
KR101163791B1 (ko) * 2006-05-16 2012-07-10 삼성전자주식회사 유기 전자소자의 전극형성 방법, 이에 의해 형성된 전극을포함하는 유기박막 트랜지스터 및 이를 포함하는 표시소자
US7691691B1 (en) * 2006-05-23 2010-04-06 Kovio, Inc. Semiconductor device and methods for making the same
US8796125B2 (en) * 2006-06-12 2014-08-05 Kovio, Inc. Printed, self-aligned, top gate thin film transistor
EP1890322A3 (en) * 2006-08-15 2012-02-15 Kovio, Inc. Printed dopant layers
US7709307B2 (en) * 2006-08-24 2010-05-04 Kovio, Inc. Printed non-volatile memory
JP2010533983A (ja) * 2007-07-17 2010-10-28 コヴィオ インコーポレイテッド シード印刷及びめっきによるコンタクト金属及び相互接続金属の印刷
US7977240B1 (en) * 2008-02-13 2011-07-12 Kovio, Inc. Metal inks for improved contact resistance

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070107773A1 (en) * 2005-11-17 2007-05-17 Palo Alto Research Center Incorporated Bifacial cell with extruded gridline metallization

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112201615A (zh) * 2020-09-09 2021-01-08 长江存储科技有限责任公司 半导体器件的焊盘制造方法及半导体器件制造方法
CN112201615B (zh) * 2020-09-09 2024-04-19 长江存储科技有限责任公司 半导体器件的焊盘制造方法及半导体器件制造方法
CN116936475A (zh) * 2023-09-15 2023-10-24 粤芯半导体技术股份有限公司 半导体器件制备方法
CN116936475B (zh) * 2023-09-15 2023-12-22 粤芯半导体技术股份有限公司 半导体器件制备方法

Also Published As

Publication number Publication date
KR101578229B1 (ko) 2015-12-16
US8158518B2 (en) 2012-04-17
EP2168165A1 (en) 2010-03-31
WO2009012423A1 (en) 2009-01-22
US20120181636A1 (en) 2012-07-19
JP2010533983A (ja) 2010-10-28
KR20100045968A (ko) 2010-05-04
EP2168165A4 (en) 2012-07-04
US20090020829A1 (en) 2009-01-22
JP6073829B2 (ja) 2017-02-01
JP2014150277A (ja) 2014-08-21
US8617992B2 (en) 2013-12-31

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