TWI456695B - 半導體裝置及其形成之方法 - Google Patents
半導體裝置及其形成之方法 Download PDFInfo
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- TWI456695B TWI456695B TW097100225A TW97100225A TWI456695B TW I456695 B TWI456695 B TW I456695B TW 097100225 A TW097100225 A TW 097100225A TW 97100225 A TW97100225 A TW 97100225A TW I456695 B TWI456695 B TW I456695B
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- 239000004065 semiconductor Substances 0.000 title claims 46
- 210000000746 body region Anatomy 0.000 claims 16
- 239000000463 material Substances 0.000 claims 8
- 239000000758 substrate Substances 0.000 claims 8
- 239000002019 doping agent Substances 0.000 claims 3
- 230000007423 decrease Effects 0.000 claims 2
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/0843—Source or drain regions of field-effect devices
- H01L29/0847—Source or drain regions of field-effect devices of field-effect transistors with insulated gate
- H01L29/0852—Source or drain regions of field-effect devices of field-effect transistors with insulated gate of DMOS transistors
- H01L29/0873—Drain regions
- H01L29/0878—Impurity concentration or distribution
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66674—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/66712—Vertical DMOS transistors, i.e. VDMOS transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42364—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the insulating layer, e.g. thickness or uniformity
- H01L29/42368—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the insulating layer, e.g. thickness or uniformity the thickness being non-uniform
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Thin Film Transistor (AREA)
- Thyristors (AREA)
Claims (16)
- 一種形成半導體裝置的方法,其包含:提供一半導體基板(4);在該半導體基板(4)上提供一第一導電類型之一半導體層(6),該半導體層(6)具有該第一導電類型之一第一摻雜濃度;在該半導體層(6)中形成該第一導電類型之一第一區(8);在該半導體層(6)上及該第一區(8)之部分上形成一控制區(26);在該半導體層上形成一遮罩層,該遮罩層加外框於該第一區(8)之部分上的該半導體層(6)之一表面(10)的一第一部分(58);將一第二導電類型之半導體材料提供予該已加外框第一部分(58),以在該半導體層(6)中提供一第二區(12);驅動該第一區(8)及第二區(12)進入該半導體層中,以形成該第一導電類型之一預控制區(8),其自該表面(10)及在該控制區(26)之一部分下延伸進入該半導體層,且具有一第一摻雜濃度之該第二導電類型之一漸變本體區(12)在該預控制區(8)下延伸進入該半導體;將該第二導電類型之半導體材料提供予該已加外框第一部分(58),以提供延伸進入該預控制區(8)的具有一第二摻雜濃度之一本體區(14),其中該預控制區(8)增加圍繞該本體區(14)之該半導體層(6)中之該第一導電類型之 該第一摻雜濃度;及在該本體區(14)中形成該第一導電類型之一電流電極區(18)。
- 如請求項1之方法,其中該漸變本體區(12)之該第一摻雜濃度遠離該預控制區(8)而降低。
- 如請求項1或2之方法,其中該漸變本體區(12)在該預控制區(8)下延伸至該基板(4)。
- 如請求項1或2之方法,其中該第二導電類型之該第二摻雜濃度係大於該第二導電類型的該第一摻雜濃度。
- 如請求項1或2之方法,其中該預控制區(8)具有該第一導電類型之一第二摻雜濃度,其中該第二摻雜濃度係大於該半導體層(6)之該第一導電類型之該第一摻雜濃度。
- 如請求項1或2之方法,其中該基板(4)係該第一導電類型且形成另一電流電極區(4),且其中在操作中當該半導體裝置係在一開啟狀態時,在該等電流電極區(4、18)間流動之電流實質上依一V形通過該本體區(14)、該預控制區(8)及該半導體層(6)。
- 如請求項1或2之方法,其中形成一第一區(8)之該步驟包含在該半導體層(6)上毯覆式植入該第一導電類型之半導體材料。
- 如請求項1或2之方法,其中該驅動步驟包含以一第一溫度之一第一熱驅動操作,且其中提供一本體區(14)之步驟包含以一第二溫度執行一第二熱驅動操作,以驅動該第二導電類型之該半導體材料進入該預控制區(8)內,其 中該第一溫度係大於該第二溫度。
- 如請求項1或2之方法,其中形成一電流電極區(14)之步驟包含:將該第一導電類型的半導體材料提供至該已加外框第一部分(58)之一部分及進入該本體區(14)內。
- 如請求項1或2之方法,其中形成一遮罩層之步驟包含:在該控制區(26)上形成一介電層(28),及移除該介電層(28)及該控制區(26)之一部分,以提供一穿過該介電層(28)及該控制區(26)之開口(58),且其中該已加外框第一部分包含該開口(58)。
- 如請求項1或2之方法,其中形成一第一區(8)之該步驟包含在該半導體層(6)中提供該第一導電類型之半導體材料,其具有一在1至3e12 cm-2 之範圍中的摻雜劑量,其中提供一第二導電類型之半導體材料以提供該第二區(12)的步驟,包含提供半導體材料至具有在1至2e13 cm-2 之範圍中的一摻雜劑量之該已加外框第一部分(58),且其中該半導體層(6)具有一約1.5e16 cm-3 之摻雜濃度。
- 一種半導體裝置,其包含:一半導體基板(4),其係一第一導電類型;該第一導電類型的一半導體層(6),其係形成在該半導體基板(4)上;一控制區(26),其係形成在該半導體層(6)之一表面(10)上;該第一導電類型之一預控制區(8),其係自該半導體層(6)之該表面(10)及在該控制區(26)之一部分下延伸進入 該半導體層(6)中;該第二導電類型且具有一第一摻雜濃度之一漸變本體區(12),其形成在該半導體層(6)中,且在該預控制區(8)下延伸進入該半導體層;具有一第二摻雜濃度之一本體區(14),其形成在該預控制區(8)中,且自該表面(10)延伸進入該預控制區(8);及該第一導電類型之電流電極區(18),其係形成在該本體區(14)中,且自該表面(10)延伸進入該本體區(14);及其中該基板(4)形成另一電流電極區(4),且其中在操作中,當該半導體裝置係在一開啟狀態時,在該等電流電極區(4、18)間流動之電流實質上依一V形通過該本體區(14)、該預控制區(8)及該半導體層(6)。
- 如請求項12之半導體裝置,其中該漸變本體區(12)之該第一摻雜濃度遠離該預控制區(8)而降低。
- 如請求項12或13之半導體裝置,其中該漸變本體區(12)在該預控制區(8)下延伸至該基板(4)。
- 如請求項12或13之半導體裝置,其中該第二導電類型之該第二摻雜濃度係大於該第二導電類型的該第一摻雜濃度。
- 如請求項12或13之半導體裝置,其中該半導體層(6)具有該第一導電類型之一第一摻雜濃度,且該預控制區(8)具有該第一導電類型之一第二摻雜濃度,其中該第二摻雜濃度係大於該第一摻雜濃度。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
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PCT/IB2007/000522 WO2008081225A1 (en) | 2007-01-04 | 2007-01-04 | Semiconductor device and method of forming a semiconductor device |
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TW200837883A TW200837883A (en) | 2008-09-16 |
TWI456695B true TWI456695B (zh) | 2014-10-11 |
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TW097100225A TWI456695B (zh) | 2007-01-04 | 2008-01-03 | 半導體裝置及其形成之方法 |
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US (1) | US8217448B2 (zh) |
CN (1) | CN101589471B (zh) |
TW (1) | TWI456695B (zh) |
WO (1) | WO2008081225A1 (zh) |
Families Citing this family (5)
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JP2010010408A (ja) * | 2008-06-27 | 2010-01-14 | Sanyo Electric Co Ltd | 半導体装置及びその製造方法 |
WO2010044226A1 (ja) * | 2008-10-17 | 2010-04-22 | パナソニック株式会社 | 半導体装置およびその製造方法 |
US20100314695A1 (en) * | 2009-06-10 | 2010-12-16 | International Rectifier Corporation | Self-aligned vertical group III-V transistor and method for fabricated same |
JP4938157B2 (ja) * | 2009-10-22 | 2012-05-23 | パナソニック株式会社 | 半導体装置およびその製造方法 |
US11075295B2 (en) * | 2018-07-13 | 2021-07-27 | Cree, Inc. | Wide bandgap semiconductor device |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH08288303A (ja) * | 1995-04-11 | 1996-11-01 | Sharp Corp | 縦型電界効果トランジスタ及びその製造方法 |
US5900662A (en) * | 1995-11-06 | 1999-05-04 | Sgs Thomson Microelectronics S.R.L. | MOS technology power device with low output resistance and low capacitance, and related manufacturing process |
US20030057478A1 (en) * | 2001-09-12 | 2003-03-27 | Chong-Man Yun | Mos-gated power semiconductor device |
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US5130767C1 (en) * | 1979-05-14 | 2001-08-14 | Int Rectifier Corp | Plural polygon source pattern for mosfet |
ATE298929T1 (de) * | 1999-11-17 | 2005-07-15 | Freescale Semiconductor Inc | Herstellungsverfahren für eine diode zur integration mit einem halbleiterbauelement und herstellungsverfahren für ein transistor- bauelement mit einer integrierten diode |
US6747312B2 (en) * | 2002-05-01 | 2004-06-08 | International Rectifier Corporation | Rad hard MOSFET with graded body diode junction and reduced on resistance |
EP1387408A1 (en) | 2002-06-12 | 2004-02-04 | Motorola, Inc. | Power semiconductor device and method of manufacturing the same |
KR100873419B1 (ko) * | 2002-06-18 | 2008-12-11 | 페어차일드코리아반도체 주식회사 | 높은 항복 전압, 낮은 온 저항 및 작은 스위칭 손실을갖는 전력용 반도체 소자 |
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- 2007-01-04 CN CN2007800492841A patent/CN101589471B/zh active Active
- 2007-01-04 WO PCT/IB2007/000522 patent/WO2008081225A1/en active Application Filing
- 2007-01-04 US US12/522,033 patent/US8217448B2/en active Active
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Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH08288303A (ja) * | 1995-04-11 | 1996-11-01 | Sharp Corp | 縦型電界効果トランジスタ及びその製造方法 |
US5900662A (en) * | 1995-11-06 | 1999-05-04 | Sgs Thomson Microelectronics S.R.L. | MOS technology power device with low output resistance and low capacitance, and related manufacturing process |
US20030057478A1 (en) * | 2001-09-12 | 2003-03-27 | Chong-Man Yun | Mos-gated power semiconductor device |
Also Published As
Publication number | Publication date |
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US20100109078A1 (en) | 2010-05-06 |
TW200837883A (en) | 2008-09-16 |
CN101589471A (zh) | 2009-11-25 |
CN101589471B (zh) | 2012-05-23 |
WO2008081225A1 (en) | 2008-07-10 |
US8217448B2 (en) | 2012-07-10 |
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