JP2008182055A5 - - Google Patents
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- Publication number
- JP2008182055A5 JP2008182055A5 JP2007014461A JP2007014461A JP2008182055A5 JP 2008182055 A5 JP2008182055 A5 JP 2008182055A5 JP 2007014461 A JP2007014461 A JP 2007014461A JP 2007014461 A JP2007014461 A JP 2007014461A JP 2008182055 A5 JP2008182055 A5 JP 2008182055A5
- Authority
- JP
- Japan
- Prior art keywords
- insulating layer
- semiconductor
- forming
- layer
- semiconductor layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 claims 59
- 238000005530 etching Methods 0.000 claims 8
- 238000010438 heat treatment Methods 0.000 claims 8
- 229910021332 silicide Inorganic materials 0.000 claims 7
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims 7
- 238000004519 manufacturing process Methods 0.000 claims 6
- 239000012535 impurity Substances 0.000 claims 4
- 238000009832 plasma treatment Methods 0.000 claims 3
- 230000015572 biosynthetic process Effects 0.000 claims 2
- 238000005755 formation reaction Methods 0.000 claims 2
- 229910052736 halogen Inorganic materials 0.000 claims 2
- 150000002367 halogens Chemical class 0.000 claims 2
- 238000009279 wet oxidation reaction Methods 0.000 claims 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007014461A JP5110888B2 (ja) | 2007-01-25 | 2007-01-25 | 半導体装置の作製方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007014461A JP5110888B2 (ja) | 2007-01-25 | 2007-01-25 | 半導体装置の作製方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2008182055A JP2008182055A (ja) | 2008-08-07 |
| JP2008182055A5 true JP2008182055A5 (zh) | 2010-02-18 |
| JP5110888B2 JP5110888B2 (ja) | 2012-12-26 |
Family
ID=39725717
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2007014461A Expired - Fee Related JP5110888B2 (ja) | 2007-01-25 | 2007-01-25 | 半導体装置の作製方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP5110888B2 (zh) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI606490B (zh) | 2010-07-02 | 2017-11-21 | 半導體能源研究所股份有限公司 | 半導體膜的製造方法，半導體裝置的製造方法，和光電轉換裝置的製造方法 |
| JP2012209543A (ja) * | 2011-03-11 | 2012-10-25 | Semiconductor Energy Lab Co Ltd | 半導体装置 |
| US8796683B2 (en) * | 2011-12-23 | 2014-08-05 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| TWI569446B (zh) * | 2011-12-23 | 2017-02-01 | 半導體能源研究所股份有限公司 | 半導體元件、半導體元件的製造方法、及包含半導體元件的半導體裝置 |
| KR102103913B1 (ko) * | 2012-01-10 | 2020-04-23 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 반도체 장치의 제작 방법 |
| US9653614B2 (en) * | 2012-01-23 | 2017-05-16 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
| JP2015195327A (ja) * | 2013-06-05 | 2015-11-05 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| CN105793995A (zh) * | 2013-11-29 | 2016-07-20 | 株式会社半导体能源研究所 | 半导体装置、半导体装置的制造方法以及显示装置 |
| CN114944827B (zh) * | 2022-06-09 | 2023-05-26 | 中国电子科技集团公司第二十九研究所 | 一种折叠线圈及分布式放大器 |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04271176A (ja) * | 1991-02-27 | 1992-09-28 | Fujitsu Ltd | 半導体装置の製造方法 |
| JP2761496B2 (ja) * | 1992-02-25 | 1998-06-04 | 株式会社 半導体エネルギー研究所 | 薄膜状絶縁ゲイト型半導体装置およびその作製方法 |
| JPH06268224A (ja) * | 1993-03-12 | 1994-09-22 | Mitsubishi Electric Corp | 電界効果型トランジスタを含む半導体装置 |
| JPH06275832A (ja) * | 1993-03-18 | 1994-09-30 | Toshiba Corp | 薄膜トランジスタおよびその製造方法 |
| JPH08330599A (ja) * | 1994-11-29 | 1996-12-13 | Sanyo Electric Co Ltd | 薄膜トランジスタ、その製造方法及び表示装置 |
| JPH08316487A (ja) * | 1995-05-17 | 1996-11-29 | Sanyo Electric Co Ltd | 薄膜半導体装置の製造方法 |
| JP4437352B2 (ja) * | 2000-02-29 | 2010-03-24 | 富士通マイクロエレクトロニクス株式会社 | 半導体装置の製造方法 |
| JP2003069025A (ja) * | 2001-08-22 | 2003-03-07 | Nec Corp | 半導体装置及びその実装方法 |
| JP2003298059A (ja) * | 2002-03-29 | 2003-10-17 | Advanced Lcd Technologies Development Center Co Ltd | 薄膜トランジスタ |
| JP2006269493A (ja) * | 2005-03-22 | 2006-10-05 | Seiko Epson Corp | 半導体装置の製造方法 |
| JP2006339326A (ja) * | 2005-06-01 | 2006-12-14 | Matsushita Electric Ind Co Ltd | 半導体装置及びその製造方法 |
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2007
- 2007-01-25 JP JP2007014461A patent/JP5110888B2/ja not_active Expired - Fee Related