JP2009099965A5 - - Google Patents
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- Publication number
- JP2009099965A5 JP2009099965A5 JP2008245254A JP2008245254A JP2009099965A5 JP 2009099965 A5 JP2009099965 A5 JP 2009099965A5 JP 2008245254 A JP2008245254 A JP 2008245254A JP 2008245254 A JP2008245254 A JP 2008245254A JP 2009099965 A5 JP2009099965 A5 JP 2009099965A5
- Authority
- JP
- Japan
- Prior art keywords
- insulating layer
- layer
- storage capacitor
- single crystal
- crystal silicon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000010410 layer Substances 0.000 claims 64
- 239000003990 capacitor Substances 0.000 claims 27
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims 23
- 239000000758 substrate Substances 0.000 claims 17
- 239000011229 interlayer Substances 0.000 claims 4
- 238000004519 manufacturing process Methods 0.000 claims 4
- 238000000034 method Methods 0.000 claims 4
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 claims 4
- 239000004065 semiconductor Substances 0.000 claims 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 3
- 238000010438 heat treatment Methods 0.000 claims 3
- 239000012535 impurity Substances 0.000 claims 3
- 229910052710 silicon Inorganic materials 0.000 claims 3
- 239000010703 silicon Substances 0.000 claims 3
- 229910021419 crystalline silicon Inorganic materials 0.000 claims 2
- 229910052739 hydrogen Inorganic materials 0.000 claims 2
- 239000001257 hydrogen Substances 0.000 claims 2
- 125000004435 hydrogen atom Chemical class [H]* 0.000 claims 2
- 150000002500 ions Chemical class 0.000 claims 2
- 238000010030 laminating Methods 0.000 claims 2
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 claims 2
- 239000011241 protective layer Substances 0.000 claims 2
- 229910001928 zirconium oxide Inorganic materials 0.000 claims 2
- 239000013078 crystal Substances 0.000 claims 1
- 238000005530 etching Methods 0.000 claims 1
- 239000002356 single layer Substances 0.000 claims 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2008245254A JP5328276B2 (ja) | 2007-09-27 | 2008-09-25 | 半導体装置の作製方法 |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007250356 | 2007-09-27 | ||
| JP2007250356 | 2007-09-27 | ||
| JP2008245254A JP5328276B2 (ja) | 2007-09-27 | 2008-09-25 | 半導体装置の作製方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2009099965A JP2009099965A (ja) | 2009-05-07 |
| JP2009099965A5 true JP2009099965A5 (enExample) | 2011-09-15 |
| JP5328276B2 JP5328276B2 (ja) | 2013-10-30 |
Family
ID=40507176
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2008245254A Expired - Fee Related JP5328276B2 (ja) | 2007-09-27 | 2008-09-25 | 半導体装置の作製方法 |
Country Status (2)
| Country | Link |
|---|---|
| US (2) | US8067793B2 (enExample) |
| JP (1) | JP5328276B2 (enExample) |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5370100B2 (ja) * | 2009-11-26 | 2013-12-18 | 株式会社村田製作所 | 圧電デバイスの製造方法 |
| KR101434948B1 (ko) * | 2009-12-25 | 2014-08-28 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
| US9853325B2 (en) | 2011-06-29 | 2017-12-26 | Space Charge, LLC | Rugged, gel-free, lithium-free, high energy density solid-state electrochemical energy storage devices |
| US11996517B2 (en) | 2011-06-29 | 2024-05-28 | Space Charge, LLC | Electrochemical energy storage devices |
| US11527774B2 (en) | 2011-06-29 | 2022-12-13 | Space Charge, LLC | Electrochemical energy storage devices |
| US20130170097A1 (en) * | 2011-06-29 | 2013-07-04 | Space Charge, LLC | Yttria-stabilized zirconia based capacitor |
| US10601074B2 (en) | 2011-06-29 | 2020-03-24 | Space Charge, LLC | Rugged, gel-free, lithium-free, high energy density solid-state electrochemical energy storage devices |
| US8772130B2 (en) | 2011-08-23 | 2014-07-08 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing method of SOI substrate |
| US8969130B2 (en) | 2011-11-18 | 2015-03-03 | Semiconductor Energy Laboratory Co., Ltd. | Insulating film, formation method thereof, semiconductor device, and manufacturing method thereof |
| KR102304725B1 (ko) * | 2014-10-16 | 2021-09-27 | 삼성디스플레이 주식회사 | 박막 트랜지스터 어레이 기판 및 이의 제조 방법, 박막 트랜지스터 어레이 기판을 포함하는 유기 발광 표시 장치 |
| WO2019173626A1 (en) | 2018-03-07 | 2019-09-12 | Space Charge, LLC | Thin-film solid-state energy-storage devices |
Family Cites Families (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH05109629A (ja) | 1991-10-16 | 1993-04-30 | Tonen Corp | 多結晶シリコン薄膜とその製造方法及びこの薄膜を用いた薄膜トランジスタ |
| JP3251778B2 (ja) | 1993-09-27 | 2002-01-28 | 三菱電機株式会社 | 半導体記憶装置およびその製造方法 |
| US5814529A (en) | 1995-01-17 | 1998-09-29 | Semiconductor Energy Laboratory Co., Ltd. | Method for producing a semiconductor integrated circuit including a thin film transistor and a capacitor |
| JP3270674B2 (ja) * | 1995-01-17 | 2002-04-02 | 株式会社半導体エネルギー研究所 | 半導体集積回路の作製方法 |
| JP3286127B2 (ja) * | 1995-08-14 | 2002-05-27 | ティーディーケイ株式会社 | Ｓｏｉデバイスおよびその製造方法 |
| JPH11163363A (ja) | 1997-11-22 | 1999-06-18 | Semiconductor Energy Lab Co Ltd | 半導体装置およびその作製方法 |
| JP4553991B2 (ja) | 1997-12-09 | 2010-09-29 | セイコーエプソン株式会社 | 電気光学装置の製造方法 |
| JP2000124092A (ja) * | 1998-10-16 | 2000-04-28 | Shin Etsu Handotai Co Ltd | 水素イオン注入剥離法によってｓｏｉウエーハを製造する方法およびこの方法で製造されたｓｏｉウエーハ |
| JP4666710B2 (ja) * | 1999-01-21 | 2011-04-06 | 株式会社半導体エネルギー研究所 | 半導体装置およびその作製方法 |
| US6590229B1 (en) | 1999-01-21 | 2003-07-08 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and process for production thereof |
| FI117979B (fi) * | 2000-04-14 | 2007-05-15 | Asm Int | Menetelmä oksidiohutkalvojen valmistamiseksi |
| JP2003218352A (ja) * | 2002-01-28 | 2003-07-31 | Fujitsu Ltd | 絶縁ゲート型半導体装置の製造方法 |
| US7119365B2 (en) * | 2002-03-26 | 2006-10-10 | Sharp Kabushiki Kaisha | Semiconductor device and manufacturing method thereof, SOI substrate and display device using the same, and manufacturing method of the SOI substrate |
| WO2004086484A1 (ja) * | 2003-03-24 | 2004-10-07 | Fujitsu Limited | 半導体装置及びその製造方法 |
| US7173320B1 (en) * | 2003-04-30 | 2007-02-06 | Altera Corporation | High performance lateral bipolar transistor |
| JP2006173354A (ja) * | 2004-12-15 | 2006-06-29 | Canon Inc | Ｓｏｉ基板の製造方法 |
| FR2896619B1 (fr) * | 2006-01-23 | 2008-05-23 | Soitec Silicon On Insulator | Procede de fabrication d'un substrat composite a proprietes electriques ameliorees |
| US7755113B2 (en) * | 2007-03-16 | 2010-07-13 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, semiconductor display device, and manufacturing method of semiconductor device |
| EP1978554A3 (en) * | 2007-04-06 | 2011-10-12 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor substrate comprising implantation and separation steps |
| JP5367330B2 (ja) * | 2007-09-14 | 2013-12-11 | 株式会社半導体エネルギー研究所 | Ｓｏｉ基板の作製方法及び半導体装置の作製方法 |
-
2008
- 2008-09-23 US US12/235,934 patent/US8067793B2/en not_active Expired - Fee Related
- 2008-09-25 JP JP2008245254A patent/JP5328276B2/ja not_active Expired - Fee Related
-
2011
- 2011-10-21 US US13/278,654 patent/US8765535B2/en not_active Expired - Fee Related
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