JP5328276B2 - 半導体装置の作製方法 - Google Patents

半導体装置の作製方法 Download PDF

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Publication number
JP5328276B2
JP5328276B2 JP2008245254A JP2008245254A JP5328276B2 JP 5328276 B2 JP5328276 B2 JP 5328276B2 JP 2008245254 A JP2008245254 A JP 2008245254A JP 2008245254 A JP2008245254 A JP 2008245254A JP 5328276 B2 JP5328276 B2 JP 5328276B2
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Japan
Prior art keywords
layer
insulating layer
storage capacitor
single crystal
crystal silicon
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Expired - Fee Related
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JP2008245254A
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English (en)
Japanese (ja)
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JP2009099965A5 (enExample
JP2009099965A (ja
Inventor
健吾 秋元
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to JP2008245254A priority Critical patent/JP5328276B2/ja
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Publication of JP2009099965A5 publication Critical patent/JP2009099965A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0214—Manufacture or treatment of multiple TFTs using temporary substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/481—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs integrated with passive devices, e.g. auxiliary capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6741—Group IV materials, e.g. germanium or silicon carbide
    • H10D30/6743—Silicon
    • H10D30/6744—Monocrystalline silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/40—Crystalline structures

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  • Thin Film Transistor (AREA)
  • Liquid Crystal (AREA)
  • Semiconductor Integrated Circuits (AREA)
JP2008245254A 2007-09-27 2008-09-25 半導体装置の作製方法 Expired - Fee Related JP5328276B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2008245254A JP5328276B2 (ja) 2007-09-27 2008-09-25 半導体装置の作製方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2007250356 2007-09-27
JP2007250356 2007-09-27
JP2008245254A JP5328276B2 (ja) 2007-09-27 2008-09-25 半導体装置の作製方法

Publications (3)

Publication Number Publication Date
JP2009099965A JP2009099965A (ja) 2009-05-07
JP2009099965A5 JP2009099965A5 (enExample) 2011-09-15
JP5328276B2 true JP5328276B2 (ja) 2013-10-30

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Family Applications (1)

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JP2008245254A Expired - Fee Related JP5328276B2 (ja) 2007-09-27 2008-09-25 半導体装置の作製方法

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US (2) US8067793B2 (enExample)
JP (1) JP5328276B2 (enExample)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5370100B2 (ja) * 2009-11-26 2013-12-18 株式会社村田製作所 圧電デバイスの製造方法
KR101870119B1 (ko) 2009-12-25 2018-06-25 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
US9853325B2 (en) 2011-06-29 2017-12-26 Space Charge, LLC Rugged, gel-free, lithium-free, high energy density solid-state electrochemical energy storage devices
US10658705B2 (en) 2018-03-07 2020-05-19 Space Charge, LLC Thin-film solid-state energy storage devices
US20130170097A1 (en) * 2011-06-29 2013-07-04 Space Charge, LLC Yttria-stabilized zirconia based capacitor
US11527774B2 (en) 2011-06-29 2022-12-13 Space Charge, LLC Electrochemical energy storage devices
US10601074B2 (en) 2011-06-29 2020-03-24 Space Charge, LLC Rugged, gel-free, lithium-free, high energy density solid-state electrochemical energy storage devices
US11996517B2 (en) 2011-06-29 2024-05-28 Space Charge, LLC Electrochemical energy storage devices
US8772130B2 (en) 2011-08-23 2014-07-08 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of SOI substrate
US8969130B2 (en) 2011-11-18 2015-03-03 Semiconductor Energy Laboratory Co., Ltd. Insulating film, formation method thereof, semiconductor device, and manufacturing method thereof
KR102304725B1 (ko) * 2014-10-16 2021-09-27 삼성디스플레이 주식회사 박막 트랜지스터 어레이 기판 및 이의 제조 방법, 박막 트랜지스터 어레이 기판을 포함하는 유기 발광 표시 장치

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05109629A (ja) 1991-10-16 1993-04-30 Tonen Corp 多結晶シリコン薄膜とその製造方法及びこの薄膜を用いた薄膜トランジスタ
JP3251778B2 (ja) 1993-09-27 2002-01-28 三菱電機株式会社 半導体記憶装置およびその製造方法
US5814529A (en) 1995-01-17 1998-09-29 Semiconductor Energy Laboratory Co., Ltd. Method for producing a semiconductor integrated circuit including a thin film transistor and a capacitor
JP3270674B2 (ja) * 1995-01-17 2002-04-02 株式会社半導体エネルギー研究所 半導体集積回路の作製方法
JP3286127B2 (ja) * 1995-08-14 2002-05-27 ティーディーケイ株式会社 Ｓｏｉデバイスおよびその製造方法
JPH11163363A (ja) 1997-11-22 1999-06-18 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法
US6232142B1 (en) 1997-12-09 2001-05-15 Seiko Epson Corporation Semiconductor device and method for making the same, electro-optical device using the same and method for making the electro-optical device, and electronic apparatus using the electro-optical device
JP2000124092A (ja) 1998-10-16 2000-04-28 Shin Etsu Handotai Co Ltd 水素イオン注入剥離法によってｓｏｉウエーハを製造する方法およびこの方法で製造されたｓｏｉウエーハ
US6590229B1 (en) 1999-01-21 2003-07-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and process for production thereof
JP4666710B2 (ja) * 1999-01-21 2011-04-06 株式会社半導体エネルギー研究所 半導体装置およびその作製方法
FI117979B (fi) * 2000-04-14 2007-05-15 Asm Int Menetelmä oksidiohutkalvojen valmistamiseksi
JP2003218352A (ja) * 2002-01-28 2003-07-31 Fujitsu Ltd 絶縁ゲート型半導体装置の製造方法
US7119365B2 (en) 2002-03-26 2006-10-10 Sharp Kabushiki Kaisha Semiconductor device and manufacturing method thereof, SOI substrate and display device using the same, and manufacturing method of the SOI substrate
JPWO2004086484A1 (ja) * 2003-03-24 2006-06-29 富士通株式会社 半導体装置及びその製造方法
US7173320B1 (en) * 2003-04-30 2007-02-06 Altera Corporation High performance lateral bipolar transistor
JP2006173354A (ja) * 2004-12-15 2006-06-29 Canon Inc Ｓｏｉ基板の製造方法
FR2896619B1 (fr) * 2006-01-23 2008-05-23 Soitec Silicon On Insulator Procede de fabrication d'un substrat composite a proprietes electriques ameliorees
US7755113B2 (en) 2007-03-16 2010-07-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, semiconductor display device, and manufacturing method of semiconductor device
EP1978554A3 (en) 2007-04-06 2011-10-12 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor substrate comprising implantation and separation steps
JP5367330B2 (ja) 2007-09-14 2013-12-11 株式会社半導体エネルギー研究所 Ｓｏｉ基板の作製方法及び半導体装置の作製方法

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Publication number Publication date
US20090085081A1 (en) 2009-04-02
US8067793B2 (en) 2011-11-29
US20120058612A1 (en) 2012-03-08
JP2009099965A (ja) 2009-05-07
US8765535B2 (en) 2014-07-01

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