JP5072210B2 - 半導体装置の作製方法 - Google Patents

半導体装置の作製方法 Download PDF

Info

Publication number
JP5072210B2
JP5072210B2 JP2005282204A JP2005282204A JP5072210B2 JP 5072210 B2 JP5072210 B2 JP 5072210B2 JP 2005282204 A JP2005282204 A JP 2005282204A JP 2005282204 A JP2005282204 A JP 2005282204A JP 5072210 B2 JP5072210 B2 JP 5072210B2
Authority
JP
Japan
Prior art keywords
insulating film
substrate
film
forming
chip
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2005282204A
Other languages
English (en)
Japanese (ja)
Other versions
JP2006135305A (ja
JP2006135305A5 (enExample
Inventor
卓也 鶴目
芳隆 道前
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP2005282204A priority Critical patent/JP5072210B2/ja
Publication of JP2006135305A publication Critical patent/JP2006135305A/ja
Publication of JP2006135305A5 publication Critical patent/JP2006135305A5/ja
Application granted granted Critical
Publication of JP5072210B2 publication Critical patent/JP5072210B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Landscapes

  • Thin Film Transistor (AREA)
  • Recrystallisation Techniques (AREA)
JP2005282204A 2004-10-05 2005-09-28 半導体装置の作製方法 Expired - Fee Related JP5072210B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2005282204A JP5072210B2 (ja) 2004-10-05 2005-09-28 半導体装置の作製方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2004292546 2004-10-05
JP2004292546 2004-10-05
JP2005282204A JP5072210B2 (ja) 2004-10-05 2005-09-28 半導体装置の作製方法

Publications (3)

Publication Number Publication Date
JP2006135305A JP2006135305A (ja) 2006-05-25
JP2006135305A5 JP2006135305A5 (enExample) 2008-08-14
JP5072210B2 true JP5072210B2 (ja) 2012-11-14

Family

ID=36728531

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2005282204A Expired - Fee Related JP5072210B2 (ja) 2004-10-05 2005-09-28 半導体装置の作製方法

Country Status (1)

Country Link
JP (1) JP5072210B2 (enExample)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101479747B (zh) 2006-06-26 2011-05-18 株式会社半导体能源研究所 包括半导体器件的纸及其制造方法
JP5094232B2 (ja) * 2006-06-26 2012-12-12 株式会社半導体エネルギー研究所 半導体装置を内包する用紙およびその作製方法
JP5204959B2 (ja) 2006-06-26 2013-06-05 株式会社半導体エネルギー研究所 半導体装置の作製方法
FR2906078B1 (fr) * 2006-09-19 2009-02-13 Commissariat Energie Atomique Procede de fabrication d'une structure micro-technologique mixte et une structure ainsi obtenue
US8137417B2 (en) 2006-09-29 2012-03-20 Semiconductor Energy Laboratory Co., Ltd. Peeling apparatus and manufacturing apparatus of semiconductor device
TWI433306B (zh) 2006-09-29 2014-04-01 Semiconductor Energy Lab 半導體裝置的製造方法
EP1970951A3 (en) * 2007-03-13 2009-05-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
JP5160119B2 (ja) * 2007-03-29 2013-03-13 株式会社フジクラ 半導体装置の製造方法
WO2009044922A1 (ja) * 2007-10-02 2009-04-09 Nec Corporation 機能性基体、薄膜素子構造の製造方法、薄膜素子構造の他の基板への転写方法
US8047442B2 (en) * 2007-12-03 2011-11-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP5216716B2 (ja) * 2008-08-20 2013-06-19 株式会社半導体エネルギー研究所 発光装置及びその作製方法
JP5581106B2 (ja) * 2009-04-27 2014-08-27 株式会社半導体エネルギー研究所 半導体装置の作製方法
TWI695525B (zh) 2014-07-25 2020-06-01 日商半導體能源研究所股份有限公司 剝離方法、發光裝置、模組以及電子裝置
JP2018006412A (ja) * 2016-06-28 2018-01-11 学校法人東北学院 半導体装置
JP7719090B2 (ja) 2020-10-05 2025-08-05 富士フイルム株式会社 情報処理装置、情報処理装置の作動方法、情報処理装置の作動プログラム、及び情報管理システム

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62219954A (ja) * 1986-03-20 1987-09-28 Fujitsu Ltd 三次元ｉｃの製造方法
JP2866730B2 (ja) * 1990-11-14 1999-03-08 日本電信電話株式会社 半導体回路の形成方法
JP3809710B2 (ja) * 1997-07-03 2006-08-16 セイコーエプソン株式会社 薄膜素子の転写方法
JP4042182B2 (ja) * 1997-07-03 2008-02-06 セイコーエプソン株式会社 Ｉｃカードの製造方法及び薄膜集積回路装置の製造方法
JP2001015721A (ja) * 1999-04-30 2001-01-19 Canon Inc 複合部材の分離方法及び薄膜の製造方法
JP4244120B2 (ja) * 2001-06-20 2009-03-25 株式会社半導体エネルギー研究所 発光装置及びその作製方法
JP4027740B2 (ja) * 2001-07-16 2007-12-26 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP4373085B2 (ja) * 2002-12-27 2009-11-25 株式会社半導体エネルギー研究所 半導体装置の作製方法、剥離方法及び転写方法

Also Published As

Publication number Publication date
JP2006135305A (ja) 2006-05-25

Similar Documents

Publication Publication Date Title
US9941115B2 (en) Method for manufacturing semiconductor device
US8546210B2 (en) Semiconductor device and method for manufacturing the same
CN100411089C (zh) 半导体器件的制造方法
KR101158831B1 (ko) 반도체 칩 및 그 제조방법
JP5433598B2 (ja) 発光装置及び電子機器
JP5430846B2 (ja) 半導体装置の作製方法
JP5072210B2 (ja) 半導体装置の作製方法
CN100505254C (zh) 半导体器件及其制作方法
JP2009164629A (ja) 半導体装置の作製方法
US20070281391A1 (en) Attachment method, attachment apparatus, manufacturing method of semiconductor device, and manufacturing apparatus of semiconductor device
CN101740584A (zh) 半导体器件的制造方法以及半导体器件和电子装置
JP4809600B2 (ja) 半導体装置の作製方法
JP2006066906A (ja) 薄膜集積回路の剥離方法および半導体装置の作製方法
JP5072217B2 (ja) 半導体装置の作製方法
JP2014090186A (ja) 半導体装置の作製方法
JP5303096B2 (ja) プロセッサ
JP2006109429A (ja) 無線チップ
JP4749102B2 (ja) 半導体装置の作製方法

Legal Events

Date Code Title Description
A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20080702

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20080702

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20120116

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20120124

A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20120307

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20120807

A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20120821

R150 Certificate of patent or registration of utility model

Free format text: JAPANESE INTERMEDIATE CODE: R150

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20150831

Year of fee payment: 3

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20150831

Year of fee payment: 3

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

LAPS Cancellation because of no payment of annual fees