JP2006135305A5 - - Google Patents

Claims (10)

A release layer is formed on the substrate ,
Forming a silicon oxide film having nitrogen on the release layer;
Forming a semiconductor film on the silicon oxide film containing nitrogen ;
Forming an insulating film on the semiconductor film;
Opening a part of the insulating film;
Forming a conductive film in contact with the release layer in the opened region;
A method for manufacturing a semiconductor device, wherein the peeling layer is subjected to heat treatment, and the substrate is peeled off using physical means to expose the conductive film . A release layer is formed on the substrate ,
Forming a silicon oxide film having nitrogen on the release layer;
Forming a semiconductor film on the silicon oxide film containing nitrogen ;
Forming an insulating film on the semiconductor film;
Opening a part of the insulating film;
Wherein the opening area, so as to be in contact with the separation layer, forming a conductive film to be the semiconductor layer electrically connected to the impurity region,
A method for manufacturing a semiconductor device, wherein the peeling layer is subjected to heat treatment, and the substrate is peeled off using physical means to expose the conductive film . In claim 1 or 2,
The release layer is made of an element selected from W, Ti, Ta, Mo, Nd, Ni, Co, Zr, Zn, Ru, Rh, Pd, Os, and Ir, or an alloy material or compound material containing the element as a main component. A method for manufacturing a semiconductor device, comprising: In any one of Claims 1 thru | or 3,
A method for manufacturing a semiconductor device, wherein a part of the insulating film is opened by laser irradiation. In any one of Claims 1 thru | or 4,
The use of the physical means is a method of manufacturing a semiconductor device using rotation of a roller. A release layer is formed on the substrate ,
Forming a silicon oxide film having nitrogen on the release layer;
Forming a semiconductor film on the silicon oxide film containing nitrogen ;
Forming an insulating film on the semiconductor film;
Opening a part of the insulating film;
Forming a conductive film in contact with the release layer in the opened region;
Heat treatment is performed on the release layer, and the conductive film is exposed by peeling the substrate using physical means ,
An inspection method for a semiconductor device, wherein an inspection is performed by bringing a probe needle into contact with the exposed conductive film . A release layer is formed on the substrate ,
Forming a silicon oxide film having nitrogen on the release layer;
Forming a semiconductor film on the silicon oxide film containing nitrogen ;
Forming an insulating film on the semiconductor film;
Opening a part of the insulating film;
Wherein the opening area, so as to be in contact with the separation layer, forming a conductive film to be the semiconductor layer electrically connected to the impurity region,
Heat treatment is performed on the release layer, and the conductive film is exposed by peeling the substrate using physical means ,
A method for inspecting a semiconductor device, wherein a probe needle is brought into contact with the exposed conductive film for inspection and bonding is performed. In claim 6 or 7 ,
The release layer is made of an element selected from W, Ti, Ta, Mo, Nd, Ni, Co, Zr, Zn, Ru, Rh, Pd, Os, and Ir, or an alloy material or compound material containing the element as a main component. A method of inspecting a semiconductor device comprising: In any one of Claims 6 thru | or 8,
A method for inspecting a semiconductor device, wherein a part of the insulating film is opened by laser irradiation. In any one of Claims 6 thru | or 9,
The use of the physical means is a method for inspecting a semiconductor device using rotation of a roller.