JP2009124042A5 - - Google Patents

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Publication number
JP2009124042A5
JP2009124042A5 JP2007298361A JP2007298361A JP2009124042A5 JP 2009124042 A5 JP2009124042 A5 JP 2009124042A5 JP 2007298361 A JP2007298361 A JP 2007298361A JP 2007298361 A JP2007298361 A JP 2007298361A JP 2009124042 A5 JP2009124042 A5 JP 2009124042A5
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JP
Japan
Prior art keywords
film
wiring
intervening
semiconductor device
opening
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Application number
JP2007298361A
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English (en)
Japanese (ja)
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JP2009124042A (ja
JP5627835B2 (ja
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Priority claimed from JP2007298361A external-priority patent/JP5627835B2/ja
Priority to JP2007298361A priority Critical patent/JP5627835B2/ja
Application filed filed Critical
Priority to US12/272,001 priority patent/US9035455B2/en
Publication of JP2009124042A publication Critical patent/JP2009124042A/ja
Publication of JP2009124042A5 publication Critical patent/JP2009124042A5/ja
Publication of JP5627835B2 publication Critical patent/JP5627835B2/ja
Application granted granted Critical
Priority to US14/690,982 priority patent/US9437544B2/en
Priority to US15/236,016 priority patent/US9607957B2/en
Priority to US15/451,770 priority patent/US9941231B2/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2007298361A 2007-11-16 2007-11-16 半導体装置および半導体装置の製造方法 Active JP5627835B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2007298361A JP5627835B2 (ja) 2007-11-16 2007-11-16 半導体装置および半導体装置の製造方法
US12/272,001 US9035455B2 (en) 2007-11-16 2008-11-17 Semiconductor device
US14/690,982 US9437544B2 (en) 2007-11-16 2015-04-20 Semiconductor device
US15/236,016 US9607957B2 (en) 2007-11-16 2016-08-12 Semiconductor device
US15/451,770 US9941231B2 (en) 2007-11-16 2017-03-07 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2007298361A JP5627835B2 (ja) 2007-11-16 2007-11-16 半導体装置および半導体装置の製造方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2013183162A Division JP5891211B2 (ja) 2013-09-04 2013-09-04 半導体装置

Publications (3)

Publication Number Publication Date
JP2009124042A JP2009124042A (ja) 2009-06-04
JP2009124042A5 true JP2009124042A5 (enExample) 2010-12-24
JP5627835B2 JP5627835B2 (ja) 2014-11-19

Family

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Family Applications (1)

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JP2007298361A Active JP5627835B2 (ja) 2007-11-16 2007-11-16 半導体装置および半導体装置の製造方法

Country Status (2)

Country Link
US (4) US9035455B2 (enExample)
JP (1) JP5627835B2 (enExample)

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JP5627835B2 (ja) * 2007-11-16 2014-11-19 ローム株式会社 半導体装置および半導体装置の製造方法
US8592995B2 (en) * 2009-07-02 2013-11-26 Taiwan Semiconductor Manufacturing Company, Ltd. Method and structure for adhesion of intermetallic compound (IMC) on Cu pillar bump
JP2011222738A (ja) * 2010-04-09 2011-11-04 Renesas Electronics Corp 半導体装置の製造方法
US9219044B2 (en) * 2013-11-18 2015-12-22 Applied Materials, Inc. Patterned photoresist to attach a carrier wafer to a silicon device wafer
KR102410018B1 (ko) * 2015-09-18 2022-06-16 삼성전자주식회사 반도체 패키지
US10903151B2 (en) * 2018-05-23 2021-01-26 Advanced Semiconductor Engineering, Inc. Semiconductor device package and method of manufacturing the same
JP7319808B2 (ja) * 2019-03-29 2023-08-02 ローム株式会社 半導体装置および半導体パッケージ
US11139272B2 (en) 2019-07-26 2021-10-05 Sandisk Technologies Llc Bonded assembly containing oxidation barriers and/or adhesion enhancers and methods of forming the same
US11393780B2 (en) 2019-07-26 2022-07-19 Sandisk Technologies Llc Bonded assembly containing oxidation barriers, hybrid bonding, or air gap, and methods of forming the same
US11515273B2 (en) 2019-07-26 2022-11-29 Sandisk Technologies Llc Bonded assembly containing oxidation barriers, hybrid bonding, or air gap, and methods of forming the same

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