JP5627835B2 - 半導体装置および半導体装置の製造方法 - Google Patents

半導体装置および半導体装置の製造方法 Download PDF

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JP5627835B2
JP5627835B2 JP2007298361A JP2007298361A JP5627835B2 JP 5627835 B2 JP5627835 B2 JP 5627835B2 JP 2007298361 A JP2007298361 A JP 2007298361A JP 2007298361 A JP2007298361 A JP 2007298361A JP 5627835 B2 JP5627835 B2 JP 5627835B2
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Prior art keywords
film
wiring
intervening
semiconductor device
passivation
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JP2009124042A (ja
JP2009124042A5 (enExample
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克己 鮫島
克己 鮫島
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Rohm Co Ltd
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Rohm Co Ltd
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Priority to JP2007298361A priority Critical patent/JP5627835B2/ja
Priority to US12/272,001 priority patent/US9035455B2/en
Publication of JP2009124042A publication Critical patent/JP2009124042A/ja
Publication of JP2009124042A5 publication Critical patent/JP2009124042A5/ja
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Publication of JP5627835B2 publication Critical patent/JP5627835B2/ja
Priority to US14/690,982 priority patent/US9437544B2/en
Priority to US15/236,016 priority patent/US9607957B2/en
Priority to US15/451,770 priority patent/US9941231B2/en
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