JP5258735B2 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP5258735B2 JP5258735B2 JP2009259715A JP2009259715A JP5258735B2 JP 5258735 B2 JP5258735 B2 JP 5258735B2 JP 2009259715 A JP2009259715 A JP 2009259715A JP 2009259715 A JP2009259715 A JP 2009259715A JP 5258735 B2 JP5258735 B2 JP 5258735B2
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- Japan
- Prior art keywords
- via hole
- electrode
- insulating film
- semiconductor device
- metal layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000004065 semiconductor Substances 0.000 title claims description 112
- 239000010410 layer Substances 0.000 claims description 99
- 229910052751 metal Inorganic materials 0.000 claims description 47
- 239000002184 metal Substances 0.000 claims description 47
- 239000000758 substrate Substances 0.000 claims description 41
- 239000011241 protective layer Substances 0.000 claims description 7
- 238000004519 manufacturing process Methods 0.000 description 18
- 238000000034 method Methods 0.000 description 15
- 230000004888 barrier function Effects 0.000 description 12
- 239000010949 copper Substances 0.000 description 11
- 230000035882 stress Effects 0.000 description 11
- 230000015572 biosynthetic process Effects 0.000 description 9
- 238000005530 etching Methods 0.000 description 9
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 6
- 229910052802 copper Inorganic materials 0.000 description 6
- 239000000463 material Substances 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- 238000005452 bending Methods 0.000 description 3
- 239000011347 resin Substances 0.000 description 3
- 229920005989 resin Polymers 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 238000009713 electroplating Methods 0.000 description 2
- 230000000149 penetrating effect Effects 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- 239000005380 borophosphosilicate glass Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000007772 electroless plating Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
- MAKDTFFYCIMFQP-UHFFFAOYSA-N titanium tungsten Chemical compound [Ti].[W] MAKDTFFYCIMFQP-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/023—Redistribution layers [RDL] for bonding areas
- H01L2224/0237—Disposition of the redistribution layers
- H01L2224/02372—Disposition of the redistribution layers connecting to a via connection in the semiconductor or solid-state body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/05541—Structure
- H01L2224/05548—Bonding area integrally formed with a redistribution layer on the semiconductor or solid-state body
Landscapes
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Description
Claims (7)
- 第1の絶縁膜上に金属層が形成された半導体チップと、
前記半導体チップの裏面から前記第1の絶縁膜に到達するビアホールと、
前記ビアホールの底部で第1の絶縁膜の一部が除去されて露出する前記金属層と電気的に接続された貫通電極と、を備え、
前記ビアホールの底部の開口径は、前記金属層の平面的な幅よりも大きく、また前記半導体基板の裏面側から前記ビアホールの深さの途中までの前記ビアホールの開口径は、同程度の大きさで、且つ前記金属層の平面的な幅及び前記ビアホールの底部の開口径よりも小さいことを特徴とする半導体装置。 - 第1の絶縁膜上に金属層が形成された半導体チップと、
前記半導体チップの裏面から前記第1の絶縁膜に到達するビアホールと、
前記ビアホールの底部で第1の絶縁膜の一部が除去されて露出する前記金属層と電気的に接続された貫通電極と、を備え、
前記ビアホールの底部の開口径は、前記金属層の平面的な幅よりも大きく、また前記半導体基板の裏面側から前記ビアホールの深さの途中までの前記ビアホールの開口径は、同程度の大きさで、且つ前記金属層の平面的な幅及び前記ビアホールの底部の開口径よりも小さく、かつ前記ビアホールの底部の開口端部が、前記金属層上にない領域を有することを特徴とする半導体装置。 - 前記半導体チップと前記貫通電極の間に形成される第2の絶縁膜を備えることを特徴とする請求項1または請求項2に記載の半導体装置。
- 前記第2の絶縁膜は前記半導体チップの裏面上に延在し、当該第2の絶縁膜上に延びて形成された配線層が前記貫通電極と電気的に接続されていることを特徴とする請求項3に記載の半導体装置。
- 前記貫通電極上及び前記配線層上を含む前記半導体チップの裏面上に形成され、前記配線層の一部を露出する保護層と、を備えることを特徴とする請求項4に記載の半導体装置。
- 前記貫通電極または前記配線層の一部上に導電端子を備えることを特徴とする請求項4または請求項5に記載の半導体装置。
- 前記金属層を含む前記半導体チップ上に支持体が貼り付けられていることを特徴とする請求項1乃至請求項6のいずれか1項に記載の半導体装置。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2009259715A JP5258735B2 (ja) | 2009-11-13 | 2009-11-13 | 半導体装置 |
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---|---|---|---|
JP2009259715A JP5258735B2 (ja) | 2009-11-13 | 2009-11-13 | 半導体装置 |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2004310726A Division JP4443379B2 (ja) | 2004-10-26 | 2004-10-26 | 半導体装置の製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2010074175A JP2010074175A (ja) | 2010-04-02 |
JP5258735B2 true JP5258735B2 (ja) | 2013-08-07 |
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JP2009259715A Expired - Fee Related JP5258735B2 (ja) | 2009-11-13 | 2009-11-13 | 半導体装置 |
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Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3530149B2 (ja) * | 2001-05-21 | 2004-05-24 | 新光電気工業株式会社 | 配線基板の製造方法及び半導体装置 |
JP4212293B2 (ja) * | 2002-04-15 | 2009-01-21 | 三洋電機株式会社 | 半導体装置の製造方法 |
JP4511148B2 (ja) * | 2002-10-11 | 2010-07-28 | 三洋電機株式会社 | 半導体装置の製造方法 |
JP2004152967A (ja) * | 2002-10-30 | 2004-05-27 | Fujikura Ltd | 反応性イオンエッチングによる貫通孔の形成方法及び反応性イオンエッチングにより形成された貫通孔を有する基板 |
JP4028393B2 (ja) * | 2003-01-09 | 2007-12-26 | 株式会社東芝 | 半導体装置およびその製造方法 |
JP2004221365A (ja) * | 2003-01-16 | 2004-08-05 | Matsushita Electric Ind Co Ltd | 半導体装置およびその製造方法 |
JP4850392B2 (ja) * | 2004-02-17 | 2012-01-11 | 三洋電機株式会社 | 半導体装置の製造方法 |
JP4803964B2 (ja) * | 2004-03-17 | 2011-10-26 | 三洋電機株式会社 | 電極構造 |
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2009
- 2009-11-13 JP JP2009259715A patent/JP5258735B2/ja not_active Expired - Fee Related
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JP2010074175A (ja) | 2010-04-02 |
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