JP4775007B2 - 半導体装置及びその製造方法 - Google Patents
半導体装置及びその製造方法 Download PDFInfo
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- JP4775007B2 JP4775007B2 JP2006020520A JP2006020520A JP4775007B2 JP 4775007 B2 JP4775007 B2 JP 4775007B2 JP 2006020520 A JP2006020520 A JP 2006020520A JP 2006020520 A JP2006020520 A JP 2006020520A JP 4775007 B2 JP4775007 B2 JP 4775007B2
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- opening
- insulating film
- semiconductor substrate
- wiring
- semiconductor device
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- 238000004519 manufacturing process Methods 0.000 title claims description 34
- 239000000758 substrate Substances 0.000 claims description 67
- 238000000034 method Methods 0.000 claims description 19
- 238000005530 etching Methods 0.000 claims description 11
- 229910010272 inorganic material Inorganic materials 0.000 claims description 2
- 239000011147 inorganic material Substances 0.000 claims description 2
- 239000011368 organic material Substances 0.000 claims description 2
- 230000000149 penetrating effect Effects 0.000 claims description 2
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- 229910052802 copper Inorganic materials 0.000 description 5
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
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- 238000007747 plating Methods 0.000 description 4
- 229920000647 polyepoxide Polymers 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 229910000838 Al alloy Inorganic materials 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- 230000004888 barrier function Effects 0.000 description 3
- 238000002161 passivation Methods 0.000 description 3
- 238000000059 patterning Methods 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
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- 239000004925 Acrylic resin Substances 0.000 description 1
- 229920000178 Acrylic resin Polymers 0.000 description 1
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
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- 150000001875 compounds Chemical class 0.000 description 1
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- 239000010453 quartz Substances 0.000 description 1
- 239000003870 refractory metal Substances 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- MAKDTFFYCIMFQP-UHFFFAOYSA-N titanium tungsten Chemical compound [Ti].[W] MAKDTFFYCIMFQP-UHFFFAOYSA-N 0.000 description 1
Classifications
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- Engineering & Computer Science (AREA)
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- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Electromagnetism (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Formation Of Insulating Films (AREA)
Description
2 第1の絶縁膜
3 第1の配線
4 接着剤
5 支持体
6 第1のレジスト膜
7A,7B 第1の開口
8 第2の開口
10 第2の絶縁膜
10a 無機の絶縁膜
10b 有機の絶縁膜
11 第2のレジスト膜
12 第2の配線
13 保護膜
14 ボール状端子
15 保護膜
Claims (12)
- 表面から裏面にかけて貫通する第1の開口を有する半導体基板と、
前記半導体基板の表面に形成され、前記第1の開口と連続した第2の開口を有する第1の絶縁膜と、
前記第1の絶縁膜上に形成され、前記第2の開口で露出された1つのパッド電極からなる第1の配線と、
前記第1の開口内における前記半導体基板の側壁及び裏面を被覆し、前記半導体基板の表面の端部から前記第1の開口の内側の方向に突出し、前記第1の絶縁膜上に存在する突出部を有し、無機材料と有機材料とが積層された構造を有する第2の絶縁膜と、
前記第2の開口内において前記第1の配線と接触し、前記第1の絶縁膜及び前記第2の絶縁膜上に形成された第2の配線とを備え、前記第2の開口の開口径は前記第1の開口の底部開口径よりも小さいことを特徴とする半導体装置。 - 前記半導体基板の表面上に支持体が貼り合わされたことを特徴とする請求項1に記載の半導体装置。
- 前記第1の開口の開口径は、前記半導体基板の表面から裏面にかけて大きくなっていることを特徴とする請求項1または2に記載の半導体装置。
- 前記第2の配線にボール状端子を具備することを特徴とする請求項1乃至3のいずれか1項に記載の半導体装置。
- 表面に第1の絶縁膜を介して第1の配線が形成された半導体基板を準備し、
前記第1の配線に対応する位置であって、前記半導体基板の裏面から表面の方向に前記半導体基板をエッチングすることで、前記第1の絶縁膜を一部露出させる第1の開口を備える前記半導体基板を形成する工程と、
前記第1の絶縁膜をエッチングすることで前記第1の配線を露出させ、前記第1の開口に連続した第2の開口を備える第1の絶縁膜を形成する工程と、
前記半導体基板を再度エッチングすることで、前記第1の開口の底部開口径をより大き
い開口径に拡張する工程と、
前記第1の開口における前記半導体基板の側壁及び裏面を被覆する第2の絶縁膜を形成する工程と、
前記第1及び第2の開口内に前記第1の配線に接続された第2の配線を形成する工程と、を具備することを特徴とする半導体装置の製造方法。 - 前記半導体基板の表面上に支持体を貼り合せる工程を有することを特徴とする請求項5に記載の半導体装置の製造方法。
- 前記第2の絶縁膜を形成する工程が、無機もしくは有機の絶縁膜を形成する工程であるか、またはそれらを積層形成する工程であることを特徴とする請求項5または6に記載の半導体装置の製造方法。
- 前記第2の絶縁膜を形成する工程において、
レジスト膜をマスクとして前記第2の絶縁膜をエッチングすることを特徴とする請求項5乃至7のいずれか1項に記載の半導体装置の製造方法。 - 前記第2の絶縁膜を形成する工程において、レジスト膜をマスクとして用いないで前記第2の絶縁膜をエッチングすることを特徴とする請求項5乃至7のいずれか1項に記載の半導体装置の製造方法。
- 前記第2の配線に接続されるボール状端子を形成する工程を具備することを特徴とする請求項5乃至9のいずれか1項に記載の半導体装置の製造方法。
- 前記半導体基板を複数の半導体チップに分割する工程を具備することを特徴とする請求項5乃至10のいずれか1項に記載の半導体装置の製造方法。
- 前記第1の開口の開口径が前記半導体基板の表面から裏面にかけて大きくなるように形成することを特徴とする請求項5乃至11のいずれか1項に記載の半導体装置の製造方法。
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JP (1) | JP4775007B2 (ja) |
KR (1) | KR100659625B1 (ja) |
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JP4694305B2 (ja) * | 2005-08-16 | 2011-06-08 | ルネサスエレクトロニクス株式会社 | 半導体ウエハの製造方法 |
US8212331B1 (en) * | 2006-10-02 | 2012-07-03 | Newport Fab, Llc | Method for fabricating a backside through-wafer via in a processed wafer and related structure |
EP2575166A3 (en) * | 2007-03-05 | 2014-04-09 | Invensas Corporation | Chips having rear contacts connected by through vias to front contacts |
JP5010948B2 (ja) * | 2007-03-06 | 2012-08-29 | オリンパス株式会社 | 半導体装置 |
JP4380718B2 (ja) * | 2007-03-15 | 2009-12-09 | ソニー株式会社 | 半導体装置の製造方法 |
JP4483896B2 (ja) | 2007-05-16 | 2010-06-16 | ソニー株式会社 | 半導体装置及びその製造方法 |
JP5245135B2 (ja) * | 2007-06-30 | 2013-07-24 | 株式会社ザイキューブ | 貫通導電体を有する半導体装置およびその製造方法 |
JP2010114201A (ja) * | 2008-11-05 | 2010-05-20 | Oki Semiconductor Co Ltd | 半導体装置の製造方法 |
JP5460069B2 (ja) * | 2009-02-16 | 2014-04-02 | パナソニック株式会社 | 半導体基板と半導体パッケージおよび半導体基板の製造方法 |
JP2010232400A (ja) * | 2009-03-27 | 2010-10-14 | Panasonic Corp | 半導体基板と半導体基板の製造方法および半導体パッケージ |
JP2012134526A (ja) * | 2012-02-22 | 2012-07-12 | Renesas Electronics Corp | 半導体装置 |
JP5874690B2 (ja) | 2012-09-05 | 2016-03-02 | 株式会社デンソー | 半導体装置の製造方法 |
JP6160901B2 (ja) * | 2013-02-08 | 2017-07-12 | ローム株式会社 | 半導体装置およびその製造方法 |
JP6309243B2 (ja) | 2013-10-30 | 2018-04-11 | ラピスセミコンダクタ株式会社 | 半導体装置およびその製造方法 |
JP5871038B2 (ja) * | 2014-08-19 | 2016-03-01 | セイコーエプソン株式会社 | 半導体装置及び電子デバイス |
CN104615982B (zh) * | 2015-01-28 | 2017-10-13 | 江阴长电先进封装有限公司 | 一种指纹识别传感器的封装结构及其封装方法 |
JP6335132B2 (ja) * | 2015-03-13 | 2018-05-30 | 東芝メモリ株式会社 | 半導体装置、および、半導体装置の製造方法 |
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