JP5165190B2 - 半導体装置及びその製造方法 - Google Patents
半導体装置及びその製造方法 Download PDFInfo
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- JP5165190B2 JP5165190B2 JP2005174922A JP2005174922A JP5165190B2 JP 5165190 B2 JP5165190 B2 JP 5165190B2 JP 2005174922 A JP2005174922 A JP 2005174922A JP 2005174922 A JP2005174922 A JP 2005174922A JP 5165190 B2 JP5165190 B2 JP 5165190B2
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- pad electrode
- plating layer
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- passivation film
- semiconductor device
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- 239000004065 semiconductor Substances 0.000 title claims description 49
- 238000004519 manufacturing process Methods 0.000 title claims description 19
- 238000002161 passivation Methods 0.000 claims description 43
- 238000007747 plating Methods 0.000 claims description 40
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 16
- 238000000034 method Methods 0.000 claims description 16
- 239000000758 substrate Substances 0.000 claims description 14
- 239000010931 gold Substances 0.000 claims description 9
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 7
- 229910052737 gold Inorganic materials 0.000 claims description 7
- 229910052759 nickel Inorganic materials 0.000 claims description 7
- 239000011368 organic material Substances 0.000 claims description 7
- 238000009713 electroplating Methods 0.000 claims description 5
- 238000007772 electroless plating Methods 0.000 claims description 3
- 239000010410 layer Substances 0.000 description 40
- 229910000679 solder Inorganic materials 0.000 description 14
- 239000011229 interlayer Substances 0.000 description 12
- 238000000576 coating method Methods 0.000 description 8
- 238000010438 heat treatment Methods 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 238000005260 corrosion Methods 0.000 description 5
- 230000007797 corrosion Effects 0.000 description 5
- 229920001721 polyimide Polymers 0.000 description 5
- 239000009719 polyimide resin Substances 0.000 description 5
- 229910052814 silicon oxide Inorganic materials 0.000 description 5
- 239000011248 coating agent Substances 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 239000000945 filler Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 239000000654 additive Substances 0.000 description 2
- 230000000996 additive effect Effects 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000007650 screen-printing Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 239000005380 borophosphosilicate glass Substances 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910021645 metal ion Inorganic materials 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000012536 packaging technology Methods 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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Description
4 パッド電極 5 第1のパッシベーション膜 6 開口部
7 メッキ層 8 露出部 9 第2のパッシベーション膜
10 開口部 11 導電端子
100 半導体基板 101 シリコン酸化膜 102 層間絶縁膜
103 パッド電極 104 パッシベーション膜 105 開口部
106 メッキ層 107 露出部 108 導電端子
Claims (6)
- 半導体基板を被覆する絶縁膜上に形成されたパッド電極と、
前記パッド電極の端部を被覆するとともに前記パッド電極上に第1の開口部を有する第1のパッシベーション膜と、
前記パッド電極上に前記第1の開口部を介して形成された、該第1の開口部の端部との間にメッキ層で被覆できずに残された前記パッド電極の露出部を有するニッケル層及び金層の積層構造から成るメッキ層と、
前記第1のパッシベーション膜の端部と前記メッキ層との間の前記パッド電極の前記露出部を被覆し、さらに前記メッキ層の端部を被覆するとともに前記メッキ層上に第2の開口部を有する第2のパッシベーション膜と、
前記メッキ層上に前記第2の開口部を介して形成された導電端子と、を有することを特徴とする半導体装置。 - 前記第1及び第2のパッシベーション膜は、有機材料から成ることを特徴とする請求項1に記載の半導体装置。
- 前記第2の開口部の前記第2のパッシベーション膜の端部と前記導電端子の間に前記メッキ層が露出されることを特徴とする請求項1または請求項2に記載の半導体装置。
- 半導体基板を被覆する絶縁膜上に形成されたパッド電極の端部を被覆するとともに、前記パッド電極上に第1の開口部を有する第1のパッシベーション膜を形成する工程と、
前記パッド電極上に前記第1の開口部を介して電解メッキ法または無電解メッキ法により、該第1の開口部の端部との間にメッキ層で被覆できずに残された前記パッド電極の露出部を有するニッケル層及び前記ニッケル層の表面の金層からなる積層構造のメッキ層を形成する工程と、
前記第1のパッシベーション膜の端部と前記メッキ層との間の前記パッド電極の前記露出部を被覆し、さらに前記メッキ層の端部を被覆するとともに前記メッキ層上に第2の開口部を有する第2のパッシベーション膜を形成する工程と、
前記メッキ層上に前記第2の開口部を介して導電端子を形成する工程と、を備えることを特徴とする半導体装置の製造方法。 - 前記第1及び第2のパッシベーション膜は、有機材料から成ることを特徴とする請求項4に記載の半導体装置の製造方法。
- 前記第2の開口部の前記第2のパッシベーション膜の端部と前記導電端子の間に前記メッキ層が露出されることを特徴とする請求項4または請求項5に記載の半導体装置の製造方法。
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JP2005174922A JP5165190B2 (ja) | 2005-06-15 | 2005-06-15 | 半導体装置及びその製造方法 |
TW095119561A TWI300602B (en) | 2005-06-15 | 2006-06-02 | Semiconductor devcie and method for manufacturing same |
CNB200610091292XA CN100527401C (zh) | 2005-06-15 | 2006-06-08 | 半导体装置及其制造方法 |
US11/451,633 US7575994B2 (en) | 2005-06-15 | 2006-06-13 | Semiconductor device and manufacturing method of the same |
SG200603995A SG128598A1 (en) | 2005-06-15 | 2006-06-13 | Semiconductor device and manufacturing method of the same |
KR1020060053430A KR100802267B1 (ko) | 2005-06-15 | 2006-06-14 | Bga형 반도체 장치 및 그 제조 방법 |
EP06012323A EP1734579A3 (en) | 2005-06-15 | 2006-06-14 | Semiconductor device and manufacturing method of the same |
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JP2012104807A (ja) * | 2010-10-12 | 2012-05-31 | Yaskawa Electric Corp | 電子装置及び電子部品 |
US8492892B2 (en) | 2010-12-08 | 2013-07-23 | International Business Machines Corporation | Solder bump connections |
TWI415237B (zh) * | 2011-08-15 | 2013-11-11 | Chipbond Technology Corp | 具有彈性凸塊之基板結構及其製造方法 |
JP7226186B2 (ja) * | 2019-08-23 | 2023-02-21 | 三菱電機株式会社 | 半導体装置 |
US11207744B2 (en) * | 2019-10-25 | 2021-12-28 | Micron Technology, Inc. | Two-step solder-mask-defined design |
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JPS5739560A (en) | 1980-08-22 | 1982-03-04 | Citizen Watch Co Ltd | Mounting method for semiconductor element |
JPS59100559A (ja) * | 1982-11-30 | 1984-06-09 | Mitsubishi Electric Corp | 半導体装置 |
JPS6180836A (ja) * | 1984-09-28 | 1986-04-24 | Hitachi Ltd | 多層配線を有する半導体装置 |
JPS63250142A (ja) * | 1987-04-06 | 1988-10-18 | Nec Corp | 半導体装置 |
JPH01109747A (ja) * | 1987-10-22 | 1989-04-26 | Mitsubishi Electric Corp | 半導体装置 |
JP3057130B2 (ja) | 1993-02-18 | 2000-06-26 | 三菱電機株式会社 | 樹脂封止型半導体パッケージおよびその製造方法 |
JPH0946027A (ja) | 1995-07-26 | 1997-02-14 | Matsushita Electric Works Ltd | プリント配線板のレジスト印刷方法 |
JP3409598B2 (ja) * | 1996-08-29 | 2003-05-26 | ソニー株式会社 | 半導体装置の製造方法 |
EP0831528A3 (en) * | 1996-09-10 | 1999-12-22 | Hitachi Chemical Company, Ltd. | Multilayer wiring board for mounting semiconductor device and method of producing the same |
US5923115A (en) * | 1996-11-22 | 1999-07-13 | Acuson Corporation | Low mass in the acoustic path flexible circuit interconnect and method of manufacture thereof |
US5946590A (en) | 1996-12-10 | 1999-08-31 | Citizen Watch Co., Ltd. | Method for making bumps |
WO2000044043A1 (fr) * | 1999-01-22 | 2000-07-27 | Hitachi, Ltd. | Dispositif a semi-conducteurs et son procede de fabrication |
JP2000299406A (ja) | 1999-04-15 | 2000-10-24 | Sanyo Electric Co Ltd | 半導体装置 |
US6683583B2 (en) * | 2000-02-11 | 2004-01-27 | 3M Innovative Properties Company | Flexible electrode antenna |
JP3596864B2 (ja) * | 2000-05-25 | 2004-12-02 | シャープ株式会社 | 半導体装置 |
JP3842548B2 (ja) * | 2000-12-12 | 2006-11-08 | 富士通株式会社 | 半導体装置の製造方法及び半導体装置 |
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JP3949505B2 (ja) | 2002-04-26 | 2007-07-25 | シャープ株式会社 | 接続端子及びその製造方法並びに半導体装置及びその製造方法 |
JP4047065B2 (ja) * | 2002-05-17 | 2008-02-13 | 株式会社タムラ製作所 | 半導体装置用パット電極部の形成方法 |
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US7112524B2 (en) * | 2003-09-29 | 2006-09-26 | Phoenix Precision Technology Corporation | Substrate for pre-soldering material and fabrication method thereof |
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SG128598A1 (en) | 2007-01-30 |
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US7575994B2 (en) | 2009-08-18 |
CN1881572A (zh) | 2006-12-20 |
TWI300602B (en) | 2008-09-01 |
KR20060131647A (ko) | 2006-12-20 |
TW200644138A (en) | 2006-12-16 |
CN100527401C (zh) | 2009-08-12 |
US20070001302A1 (en) | 2007-01-04 |
EP1734579A3 (en) | 2008-09-03 |
JP2006351767A (ja) | 2006-12-28 |
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