JPS63250142A - 半導体装置 - Google Patents
半導体装置Info
- Publication number
- JPS63250142A JPS63250142A JP62085059A JP8505987A JPS63250142A JP S63250142 A JPS63250142 A JP S63250142A JP 62085059 A JP62085059 A JP 62085059A JP 8505987 A JP8505987 A JP 8505987A JP S63250142 A JPS63250142 A JP S63250142A
- Authority
- JP
- Japan
- Prior art keywords
- aluminum
- semiconductor device
- bonding pad
- insulating film
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 17
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 29
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 29
- 238000000034 method Methods 0.000 abstract description 8
- 238000007689 inspection Methods 0.000 abstract description 5
- 238000010030 laminating Methods 0.000 abstract 3
- 230000000149 penetrating effect Effects 0.000 abstract 2
- 239000000523 sample Substances 0.000 abstract 2
- 230000007547 defect Effects 0.000 abstract 1
- 230000002093 peripheral effect Effects 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 12
- 239000002356 single layer Substances 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000008595 infiltration Effects 0.000 description 1
- 238000001764 infiltration Methods 0.000 description 1
- 229910001092 metal group alloy Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/02—Bonding areas ; Manufacturing methods related thereto
- H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L24/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/0212—Auxiliary members for bonding areas, e.g. spacers
- H01L2224/02122—Auxiliary members for bonding areas, e.g. spacers being formed on the semiconductor or solid-state body
- H01L2224/02163—Auxiliary members for bonding areas, e.g. spacers being formed on the semiconductor or solid-state body on the bonding area
- H01L2224/02165—Reinforcing structures
- H01L2224/02166—Collar structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/05001—Internal layers
- H01L2224/05073—Single internal layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/05001—Internal layers
- H01L2224/05099—Material
- H01L2224/051—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/05117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
- H01L2224/05124—Aluminium [Al] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/05599—Material
- H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/05617—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
- H01L2224/05624—Aluminium [Al] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
- H01L2224/45124—Aluminium (Al) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/485—Material
- H01L2224/48505—Material at the bonding interface
- H01L2224/48699—Principal constituent of the connecting portion of the wire connector being Aluminium (Al)
- H01L2224/487—Principal constituent of the connecting portion of the wire connector being Aluminium (Al) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/48717—Principal constituent of the connecting portion of the wire connector being Aluminium (Al) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950 °C
- H01L2224/48724—Aluminium (Al) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01013—Aluminum [Al]
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Wire Bonding (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。
め要約のデータは記録されません。
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は半導体装置に関し、特に多層アルミ配線工程を
持つ、半導体装置の外部接続部であるポンディングパッ
ド部に関するものである。
持つ、半導体装置の外部接続部であるポンディングパッ
ド部に関するものである。
従来の多層アルミ配線工程を有する半導体装置における
ポンディングパッド部は、最終工程のアルミによる一層
構造であり、厚さも、その工程で作られる厚さで決定さ
れていた。
ポンディングパッド部は、最終工程のアルミによる一層
構造であり、厚さも、その工程で作られる厚さで決定さ
れていた。
上述した従来の半導体装置の外部接続部であるポンディ
ングパッド部の厚さでは、ウェハー状態で半導体装置を
電気的試験等を行なう金属合金の針で強制的にキズを作
り、接触面を確保させる場合には、アルミ下部まで到達
してしまう事があシ、この後、組立工程等で封入した場
合、耐湿性が劣化するという欠点がある。
ングパッド部の厚さでは、ウェハー状態で半導体装置を
電気的試験等を行なう金属合金の針で強制的にキズを作
り、接触面を確保させる場合には、アルミ下部まで到達
してしまう事があシ、この後、組立工程等で封入した場
合、耐湿性が劣化するという欠点がある。
本発明は上述した理由による耐湿性劣化を減少させるた
め、多層アルミ配線の各層の厚さを重ね合わせる事によ
シ、半導体検査装置の針をアルミ下部まで到達しにくく
する事ができる。重ね合わせは、マスクを一部変更する
だけで容易に実現することができる。
め、多層アルミ配線の各層の厚さを重ね合わせる事によ
シ、半導体検査装置の針をアルミ下部まで到達しにくく
する事ができる。重ね合わせは、マスクを一部変更する
だけで容易に実現することができる。
上述した従来の半導体装置に対し、本発明は外部接続部
であるポンディングパッド部が2層又は多層のアルミの
重ね合わせの構造を有する内容を持っている。
であるポンディングパッド部が2層又は多層のアルミの
重ね合わせの構造を有する内容を持っている。
し実施例〕
第1図は本発明の一実施例であり、第1図の(a)は上
から見た上面図、lblは断面図である。
から見た上面図、lblは断面図である。
本図の実施例は1が一層アルミ、2が第二絶縁膜と二層
アルミとの境界、3が二層アルミ、4が第一絶縁膜と一
層アルミの境界、5が第一絶縁膜、6が第二絶縁膜を示
している。
アルミとの境界、3が二層アルミ、4が第一絶縁膜と一
層アルミの境界、5が第一絶縁膜、6が第二絶縁膜を示
している。
本発明の一実施例は二層アルミニ程までを有するものを
図示しているが三層及び多層工程を有する場合はさらに
重ねてアルミ厚を厚くする事もできる。
図示しているが三層及び多層工程を有する場合はさらに
重ねてアルミ厚を厚くする事もできる。
第2図は本発明の他の実施例である。(alは上から見
た上面図、(b)は断面図である。
た上面図、(b)は断面図である。
この実施例では、二層目のアルミ3が完全に露出してい
る為、半導体検査装置の針のアルミとの接触が広い面積
で可能となり又前述の耐湿性向上という利点もある。
る為、半導体検査装置の針のアルミとの接触が広い面積
で可能となり又前述の耐湿性向上という利点もある。
以上説明した様に、本発明は多層アルミ配線工程を有す
る半導体装置において、多層アルミを重ねることによシ
ボンディングパッド部の厚さを厚くすることができ、そ
のために、半導体検査装置の針によるキズ(接触によっ
てできるもの)及び水分等の浸入を防ぐ事ができ、耐湿
性の向上に効果がある。
る半導体装置において、多層アルミを重ねることによシ
ボンディングパッド部の厚さを厚くすることができ、そ
のために、半導体検査装置の針によるキズ(接触によっ
てできるもの)及び水分等の浸入を防ぐ事ができ、耐湿
性の向上に効果がある。
第1図(a)は本発明の一実施例の上面から見た図であ
シ、第1図(b)は第1図(a)のA−A’で切った時
の断面図である。第2図(a)は本発明の他の実施例の
平面図であシ、第2図Tb)は第2図(a)のB−8’
部の断面図である。 1・・・・・・一層アルミ、2・・・・・・第二絶縁膜
と二層アルミとの境界、3・・・・・・二層アルミ、4
・・・・・・第一絶縁膜と一層アルミとの境界、5・・
・・・・第一絶縁膜、6・・・・・・第二絶縁膜。
シ、第1図(b)は第1図(a)のA−A’で切った時
の断面図である。第2図(a)は本発明の他の実施例の
平面図であシ、第2図Tb)は第2図(a)のB−8’
部の断面図である。 1・・・・・・一層アルミ、2・・・・・・第二絶縁膜
と二層アルミとの境界、3・・・・・・二層アルミ、4
・・・・・・第一絶縁膜と一層アルミとの境界、5・・
・・・・第一絶縁膜、6・・・・・・第二絶縁膜。
Claims (1)
- 多層アルミを使用する半導体装置のボンディングパッド
部の厚さを、各層のアルミを重ねる事により厚くした事
を特徴とする半導体装置。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62085059A JPS63250142A (ja) | 1987-04-06 | 1987-04-06 | 半導体装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62085059A JPS63250142A (ja) | 1987-04-06 | 1987-04-06 | 半導体装置 |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS63250142A true JPS63250142A (ja) | 1988-10-18 |
Family
ID=13848064
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP62085059A Pending JPS63250142A (ja) | 1987-04-06 | 1987-04-06 | 半導体装置 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS63250142A (ja) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5394013A (en) * | 1990-11-28 | 1995-02-28 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor device with an elevated bonding pad |
EP0646959A1 (en) * | 1993-09-30 | 1995-04-05 | Consorzio per la Ricerca sulla Microelettronica nel Mezzogiorno - CoRiMMe | Metallization and bonding process for manufacturing power semiconductor devices |
JP2006351767A (ja) * | 2005-06-15 | 2006-12-28 | Sanyo Electric Co Ltd | 半導体装置及びその製造方法 |
JP2011108686A (ja) * | 2009-11-12 | 2011-06-02 | Ricoh Co Ltd | 半導体装置 |
WO2021186773A1 (ja) * | 2020-03-19 | 2021-09-23 | 株式会社日立パワーデバイス | 半導体装置 |
-
1987
- 1987-04-06 JP JP62085059A patent/JPS63250142A/ja active Pending
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5394013A (en) * | 1990-11-28 | 1995-02-28 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor device with an elevated bonding pad |
EP0646959A1 (en) * | 1993-09-30 | 1995-04-05 | Consorzio per la Ricerca sulla Microelettronica nel Mezzogiorno - CoRiMMe | Metallization and bonding process for manufacturing power semiconductor devices |
US5773899A (en) * | 1993-09-30 | 1998-06-30 | Consorzio Per La Ricerca Sulla Microelettronica Nel Mezzogiorno | Bonding pad for a semiconductor chip |
US5869357A (en) * | 1993-09-30 | 1999-02-09 | Consorzio Per La Ricerca Sulla Microelettronica Nel Mezzogiorno | Metallization and wire bonding process for manufacturing power semiconductor devices |
JP2006351767A (ja) * | 2005-06-15 | 2006-12-28 | Sanyo Electric Co Ltd | 半導体装置及びその製造方法 |
JP2011108686A (ja) * | 2009-11-12 | 2011-06-02 | Ricoh Co Ltd | 半導体装置 |
WO2021186773A1 (ja) * | 2020-03-19 | 2021-09-23 | 株式会社日立パワーデバイス | 半導体装置 |
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