JP5036127B2 - 半導体装置の製造方法 - Google Patents
半導体装置の製造方法 Download PDFInfo
- Publication number
- JP5036127B2 JP5036127B2 JP2004310725A JP2004310725A JP5036127B2 JP 5036127 B2 JP5036127 B2 JP 5036127B2 JP 2004310725 A JP2004310725 A JP 2004310725A JP 2004310725 A JP2004310725 A JP 2004310725A JP 5036127 B2 JP5036127 B2 JP 5036127B2
- Authority
- JP
- Japan
- Prior art keywords
- pad electrode
- electrode
- semiconductor substrate
- insulating film
- wiring layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/11—Manufacturing methods
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/013—Alloys
- H01L2924/014—Solder alloys
Landscapes
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Description
Claims (3)
- 半導体基板の表面上に第1の絶縁膜を介してパッド電極を形成する工程と、
前記パッド電極を覆うようにして、当該パッド電極上及び当該第1の絶縁膜上に、第2の絶縁膜を形成する工程と、
前記第2の絶縁膜の一部をエッチングして、前記パッド電極を露出する開口部を形成する工程と、
前記開口部内及び当該開口部の近傍全周に渡って前記第2の絶縁膜上に、当該開口部を通して前記パッド電極と電気的に接続された第1の配線層を形成する工程と、
前記半導体基板の裏面から当該パッド電極に到達し、かつ前記開口部と実質的に同等の開口径を有するビアホールを形成する工程と、
前記ビアホールを通して前記パッド電極と電気的に接続された貫通電極を形成する工程と、
前記半導体基板を複数の半導体チップに切断分離する工程と、を有することを特徴とする半導体装置の製造方法。 - 前記貫通電極と電気的に接続された前記半導体基板の裏面上に延びる第2の配線層を形成する工程と、
前記第2の配線層を含む前記半導体基板上に、当該第2の配線層の一部上を露出するようにして保護層を形成する工程と、を有することを特徴とする請求項1記載の半導体装置の製造方法。 - 前記第2の配線層の一部上に導電端子を形成する工程を有することを特徴とする請求項2記載の半導体装置の製造方法。
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004310725A JP5036127B2 (ja) | 2004-10-26 | 2004-10-26 | 半導体装置の製造方法 |
TW094135631A TWI303864B (en) | 2004-10-26 | 2005-10-13 | Semiconductor device and method for making the same |
CNB2005101181005A CN100428456C (zh) | 2004-10-26 | 2005-10-25 | 半导体装置及其制造方法 |
KR1020050100579A KR100658547B1 (ko) | 2004-10-26 | 2005-10-25 | 반도체 장치 및 그 제조 방법 |
US11/257,406 US7582971B2 (en) | 2004-10-26 | 2005-10-25 | Semiconductor device and manufacturing method of the same |
EP05023408A EP1653508A3 (en) | 2004-10-26 | 2005-10-26 | Semiconductor device and manufacturing method of the same |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004310725A JP5036127B2 (ja) | 2004-10-26 | 2004-10-26 | 半導体装置の製造方法 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2010143785A Division JP2010251791A (ja) | 2010-06-24 | 2010-06-24 | 半導体装置及びその製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2006128171A JP2006128171A (ja) | 2006-05-18 |
JP5036127B2 true JP5036127B2 (ja) | 2012-09-26 |
Family
ID=36722599
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2004310725A Active JP5036127B2 (ja) | 2004-10-26 | 2004-10-26 | 半導体装置の製造方法 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP5036127B2 (ja) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2009224492A (ja) | 2008-03-14 | 2009-10-01 | Oki Semiconductor Co Ltd | 半導体装置及びその製造方法 |
JP5356742B2 (ja) * | 2008-07-10 | 2013-12-04 | ラピスセミコンダクタ株式会社 | 半導体装置、半導体装置の製造方法および半導体パッケージの製造方法 |
JP5352534B2 (ja) * | 2010-05-31 | 2013-11-27 | パナソニック株式会社 | 半導体装置及びその製造方法 |
US8492878B2 (en) * | 2010-07-21 | 2013-07-23 | International Business Machines Corporation | Metal-contamination-free through-substrate via structure |
JP5754239B2 (ja) * | 2011-05-24 | 2015-07-29 | ソニー株式会社 | 半導体装置 |
JP5588553B2 (ja) * | 2013-08-29 | 2014-09-10 | ラピスセミコンダクタ株式会社 | 半導体装置および半導体装置の製造方法 |
JP5876893B2 (ja) * | 2014-04-02 | 2016-03-02 | ラピスセミコンダクタ株式会社 | 半導体装置及びその製造方法 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3278533B2 (ja) * | 1994-07-28 | 2002-04-30 | 三菱電機株式会社 | 樹脂封止型半導体装置の製造方法 |
JP3294811B2 (ja) * | 1999-01-22 | 2002-06-24 | 株式会社日立製作所 | 半導体集積回路装置及びその製造方法 |
JP3459234B2 (ja) * | 2001-02-01 | 2003-10-20 | カシオ計算機株式会社 | 半導体装置およびその製造方法 |
JP4212293B2 (ja) * | 2002-04-15 | 2009-01-21 | 三洋電機株式会社 | 半導体装置の製造方法 |
JP2004047771A (ja) * | 2002-07-12 | 2004-02-12 | Denso Corp | 半導体装置、その製造方法、及びその検査方法 |
-
2004
- 2004-10-26 JP JP2004310725A patent/JP5036127B2/ja active Active
Also Published As
Publication number | Publication date |
---|---|
JP2006128171A (ja) | 2006-05-18 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP4443379B2 (ja) | 半導体装置の製造方法 | |
JP4873517B2 (ja) | 半導体装置及びその製造方法 | |
KR100658547B1 (ko) | 반도체 장치 및 그 제조 방법 | |
JP4376715B2 (ja) | 半導体装置の製造方法 | |
JP4307284B2 (ja) | 半導体装置の製造方法 | |
JP4373866B2 (ja) | 半導体装置の製造方法 | |
JP4850392B2 (ja) | 半導体装置の製造方法 | |
US8435836B2 (en) | Interconnect structures for stacked dies, including penetrating structures for through-silicon vias, and associated systems and methods | |
JP4775007B2 (ja) | 半導体装置及びその製造方法 | |
JP4522574B2 (ja) | 半導体装置の作製方法 | |
WO2010035375A1 (ja) | 半導体装置及びその製造方法 | |
JP5627835B2 (ja) | 半導体装置および半導体装置の製造方法 | |
JP2005235860A (ja) | 半導体装置及びその製造方法 | |
JP2010251791A (ja) | 半導体装置及びその製造方法 | |
JP4845368B2 (ja) | 半導体装置及びその製造方法 | |
JP5036127B2 (ja) | 半導体装置の製造方法 | |
JP4544902B2 (ja) | 半導体装置及びその製造方法 | |
JP5258735B2 (ja) | 半導体装置 | |
JP2005260079A (ja) | 半導体装置及びその製造方法 | |
JP4845986B2 (ja) | 半導体装置 | |
JP4769926B2 (ja) | 半導体装置及びその製造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20071017 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20090828 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20090901 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20091026 |
|
A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20100325 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20100624 |
|
A911 | Transfer to examiner for re-examination before appeal (zenchi) |
Free format text: JAPANESE INTERMEDIATE CODE: A911 Effective date: 20100702 |
|
A912 | Re-examination (zenchi) completed and case transferred to appeal board |
Free format text: JAPANESE INTERMEDIATE CODE: A912 Effective date: 20100723 |
|
A711 | Notification of change in applicant |
Free format text: JAPANESE INTERMEDIATE CODE: A711 Effective date: 20110614 |
|
RD02 | Notification of acceptance of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7422 Effective date: 20110614 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20120524 |
|
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20120703 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20150713 Year of fee payment: 3 |
|
R150 | Certificate of patent or registration of utility model |
Free format text: JAPANESE INTERMEDIATE CODE: R150 Ref document number: 5036127 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20150713 Year of fee payment: 3 |
|
S111 | Request for change of ownership or part of ownership |
Free format text: JAPANESE INTERMEDIATE CODE: R313113 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20150713 Year of fee payment: 3 |
|
R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |