JP2010278181A5 - - Google Patents
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- Publication number
- JP2010278181A5 JP2010278181A5 JP2009128531A JP2009128531A JP2010278181A5 JP 2010278181 A5 JP2010278181 A5 JP 2010278181A5 JP 2009128531 A JP2009128531 A JP 2009128531A JP 2009128531 A JP2009128531 A JP 2009128531A JP 2010278181 A5 JP2010278181 A5 JP 2010278181A5
- Authority
- JP
- Japan
- Prior art keywords
- layer
- barrier metal
- semiconductor substrate
- forming
- contact hole
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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- 230000004888 barrier function Effects 0.000 claims description 33
- 229910052751 metal Inorganic materials 0.000 claims description 32
- 239000002184 metal Substances 0.000 claims description 32
- 239000000758 substrate Substances 0.000 claims description 23
- 239000010949 copper Substances 0.000 claims description 6
- 238000007747 plating Methods 0.000 claims description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 4
- 229910052802 copper Inorganic materials 0.000 claims description 4
- 238000009713 electroplating Methods 0.000 claims description 2
- 238000005530 etching Methods 0.000 claims description 2
- 238000000034 method Methods 0.000 claims description 2
- 239000010410 layer Substances 0.000 claims 50
- 239000004065 semiconductor Substances 0.000 claims 28
- 238000004519 manufacturing process Methods 0.000 claims 5
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims 4
- 238000009792 diffusion process Methods 0.000 claims 4
- 239000012535 impurity Substances 0.000 claims 4
- 239000010936 titanium Substances 0.000 claims 4
- 229910052719 titanium Inorganic materials 0.000 claims 4
- 229910000838 Al alloy Inorganic materials 0.000 claims 2
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 claims 2
- 229910052782 aluminium Inorganic materials 0.000 claims 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims 2
- 239000003990 capacitor Substances 0.000 claims 2
- 239000002344 surface layer Substances 0.000 claims 2
- 230000000149 penetrating effect Effects 0.000 claims 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 7
- 229910052710 silicon Inorganic materials 0.000 description 7
- 239000010703 silicon Substances 0.000 description 7
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- 238000000059 patterning Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2009128531A JP5419547B2 (ja) | 2009-05-28 | 2009-05-28 | 半導体装置及びその製造方法 |
| US12/752,736 US8598684B2 (en) | 2009-04-06 | 2010-04-01 | Semiconductor device, and method of manufacturing the same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2009128531A JP5419547B2 (ja) | 2009-05-28 | 2009-05-28 | 半導体装置及びその製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2010278181A JP2010278181A (ja) | 2010-12-09 |
| JP2010278181A5 true JP2010278181A5 (enExample) | 2012-03-29 |
| JP5419547B2 JP5419547B2 (ja) | 2014-02-19 |
Family
ID=43424885
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2009128531A Active JP5419547B2 (ja) | 2009-04-06 | 2009-05-28 | 半導体装置及びその製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP5419547B2 (enExample) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101758617B1 (ko) | 2011-02-15 | 2017-07-18 | 에스케이하이닉스 주식회사 | 반도체 소자의 제조방법 |
| KR101278442B1 (ko) | 2012-01-19 | 2013-07-01 | 한국과학기술원 | 관통 실리콘 비아를 이용한 수동 이퀄라이저를 구비하는 인터포저, 그 제조 방법, 인터포저를 포함하는 적층 칩 패키지, 및 그 제조 방법 |
| JP5934752B2 (ja) * | 2014-07-01 | 2016-06-15 | 有限会社 ナプラ | 集積回路装置 |
| JP6881066B2 (ja) * | 2017-06-19 | 2021-06-02 | 大日本印刷株式会社 | 貫通電極基板および貫通電極基板の製造方法 |
| JP7341927B2 (ja) * | 2020-03-12 | 2023-09-11 | キオクシア株式会社 | 半導体記憶装置 |
| US20250324803A1 (en) * | 2022-05-27 | 2025-10-16 | Sony Semiconductor Solutions Corporation | Semiconductor device, electronic device, and manufacturing method |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4131648B2 (ja) * | 2002-07-10 | 2008-08-13 | 株式会社東芝 | 半導体装置および半導体装置の製造方法 |
| JP4327644B2 (ja) * | 2004-03-31 | 2009-09-09 | Ｎｅｃエレクトロニクス株式会社 | 半導体装置の製造方法 |
| JP2006278646A (ja) * | 2005-03-29 | 2006-10-12 | Sanyo Electric Co Ltd | 半導体装置の製造方法 |
| JP5394617B2 (ja) * | 2006-06-16 | 2014-01-22 | 新光電気工業株式会社 | 半導体装置及び半導体装置の製造方法及び基板 |
-
2009
- 2009-05-28 JP JP2009128531A patent/JP5419547B2/ja active Active
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