JP5419547B2 - 半導体装置及びその製造方法 - Google Patents

半導体装置及びその製造方法 Download PDF

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Publication number
JP5419547B2
JP5419547B2 JP2009128531A JP2009128531A JP5419547B2 JP 5419547 B2 JP5419547 B2 JP 5419547B2 JP 2009128531 A JP2009128531 A JP 2009128531A JP 2009128531 A JP2009128531 A JP 2009128531A JP 5419547 B2 JP5419547 B2 JP 5419547B2
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Prior art keywords
layer
barrier metal
semiconductor substrate
semiconductor device
electrode
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JP2009128531A
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Japanese (ja)
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JP2010278181A (ja
JP2010278181A5 (enExample
Inventor
啓 村山
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Shinko Electric Industries Co Ltd
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Shinko Electric Industries Co Ltd
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Priority to JP2009128531A priority Critical patent/JP5419547B2/ja
Priority to US12/752,736 priority patent/US8598684B2/en
Publication of JP2010278181A publication Critical patent/JP2010278181A/ja
Publication of JP2010278181A5 publication Critical patent/JP2010278181A5/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

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  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
JP2009128531A 2009-04-06 2009-05-28 半導体装置及びその製造方法 Active JP5419547B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2009128531A JP5419547B2 (ja) 2009-05-28 2009-05-28 半導体装置及びその製造方法
US12/752,736 US8598684B2 (en) 2009-04-06 2010-04-01 Semiconductor device, and method of manufacturing the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2009128531A JP5419547B2 (ja) 2009-05-28 2009-05-28 半導体装置及びその製造方法

Publications (3)

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JP2010278181A JP2010278181A (ja) 2010-12-09
JP2010278181A5 JP2010278181A5 (enExample) 2012-03-29
JP5419547B2 true JP5419547B2 (ja) 2014-02-19

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JP2009128531A Active JP5419547B2 (ja) 2009-04-06 2009-05-28 半導体装置及びその製造方法

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Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101758617B1 (ko) 2011-02-15 2017-07-18 에스케이하이닉스 주식회사 반도체 소자의 제조방법
KR101278442B1 (ko) 2012-01-19 2013-07-01 한국과학기술원 관통 실리콘 비아를 이용한 수동 이퀄라이저를 구비하는 인터포저, 그 제조 방법, 인터포저를 포함하는 적층 칩 패키지, 및 그 제조 방법
JP5934752B2 (ja) * 2014-07-01 2016-06-15 有限会社 ナプラ 集積回路装置
JP6881066B2 (ja) * 2017-06-19 2021-06-02 大日本印刷株式会社 貫通電極基板および貫通電極基板の製造方法
JP7341927B2 (ja) * 2020-03-12 2023-09-11 キオクシア株式会社 半導体記憶装置
WO2023228704A1 (ja) * 2022-05-27 2023-11-30 ソニーセミコンダクタソリューションズ株式会社 半導体デバイス、電子機器、および製造方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4131648B2 (ja) * 2002-07-10 2008-08-13 株式会社東芝 半導体装置および半導体装置の製造方法
JP4327644B2 (ja) * 2004-03-31 2009-09-09 Ｎｅｃエレクトロニクス株式会社 半導体装置の製造方法
JP2006278646A (ja) * 2005-03-29 2006-10-12 Sanyo Electric Co Ltd 半導体装置の製造方法
JP5394617B2 (ja) * 2006-06-16 2014-01-22 新光電気工業株式会社 半導体装置及び半導体装置の製造方法及び基板

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JP2010278181A (ja) 2010-12-09

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