JP2010245263A5 - - Google Patents
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- Publication number
- JP2010245263A5 JP2010245263A5 JP2009092014A JP2009092014A JP2010245263A5 JP 2010245263 A5 JP2010245263 A5 JP 2010245263A5 JP 2009092014 A JP2009092014 A JP 2009092014A JP 2009092014 A JP2009092014 A JP 2009092014A JP 2010245263 A5 JP2010245263 A5 JP 2010245263A5
- Authority
- JP
- Japan
- Prior art keywords
- layer
- semiconductor substrate
- barrier metal
- metal pattern
- forming
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000758 substrate Substances 0.000 claims description 27
- 239000010410 layer Substances 0.000 claims 39
- 239000004065 semiconductor Substances 0.000 claims 30
- 230000004888 barrier function Effects 0.000 claims 12
- 229910052751 metal Inorganic materials 0.000 claims 12
- 239000002184 metal Substances 0.000 claims 12
- 238000004519 manufacturing process Methods 0.000 claims 5
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims 4
- 238000009792 diffusion process Methods 0.000 claims 4
- 239000012535 impurity Substances 0.000 claims 4
- 239000010936 titanium Substances 0.000 claims 4
- 229910052719 titanium Inorganic materials 0.000 claims 4
- 229910000838 Al alloy Inorganic materials 0.000 claims 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims 2
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 claims 2
- 229910052782 aluminium Inorganic materials 0.000 claims 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims 2
- 239000003990 capacitor Substances 0.000 claims 2
- 229910052802 copper Inorganic materials 0.000 claims 2
- 239000010949 copper Substances 0.000 claims 2
- 239000002344 surface layer Substances 0.000 claims 2
- 238000000034 method Methods 0.000 claims 1
- 230000000149 penetrating effect Effects 0.000 claims 1
- 238000007747 plating Methods 0.000 claims 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 7
- 229910052710 silicon Inorganic materials 0.000 description 7
- 239000010703 silicon Substances 0.000 description 7
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2009092014A JP5419525B2 (ja) | 2009-04-06 | 2009-04-06 | 半導体装置及びその製造方法 |
| US12/752,736 US8598684B2 (en) | 2009-04-06 | 2010-04-01 | Semiconductor device, and method of manufacturing the same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2009092014A JP5419525B2 (ja) | 2009-04-06 | 2009-04-06 | 半導体装置及びその製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2010245263A JP2010245263A (ja) | 2010-10-28 |
| JP2010245263A5 true JP2010245263A5 (enExample) | 2012-04-05 |
| JP5419525B2 JP5419525B2 (ja) | 2014-02-19 |
Family
ID=43097963
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2009092014A Active JP5419525B2 (ja) | 2009-04-06 | 2009-04-06 | 半導体装置及びその製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP5419525B2 (enExample) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5601380B2 (ja) * | 2010-12-28 | 2014-10-08 | 富士通セミコンダクター株式会社 | 半導体装置の製造方法 |
| KR101278442B1 (ko) | 2012-01-19 | 2013-07-01 | 한국과학기술원 | 관통 실리콘 비아를 이용한 수동 이퀄라이저를 구비하는 인터포저, 그 제조 방법, 인터포저를 포함하는 적층 칩 패키지, 및 그 제조 방법 |
| JP2015153978A (ja) * | 2014-02-18 | 2015-08-24 | キヤノン株式会社 | 貫通配線の作製方法 |
| WO2015136821A1 (ja) | 2014-03-12 | 2015-09-17 | 学校法人慶應義塾 | 積層半導体集積回路装置 |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4131648B2 (ja) * | 2002-07-10 | 2008-08-13 | 株式会社東芝 | 半導体装置および半導体装置の製造方法 |
| JP4327644B2 (ja) * | 2004-03-31 | 2009-09-09 | Ｎｅｃエレクトロニクス株式会社 | 半導体装置の製造方法 |
| JP2006278646A (ja) * | 2005-03-29 | 2006-10-12 | Sanyo Electric Co Ltd | 半導体装置の製造方法 |
| JP5394617B2 (ja) * | 2006-06-16 | 2014-01-22 | 新光電気工業株式会社 | 半導体装置及び半導体装置の製造方法及び基板 |
-
2009
- 2009-04-06 JP JP2009092014A patent/JP5419525B2/ja active Active
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