JP5419525B2 - 半導体装置及びその製造方法 - Google Patents

半導体装置及びその製造方法 Download PDF

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JP5419525B2
JP5419525B2 JP2009092014A JP2009092014A JP5419525B2 JP 5419525 B2 JP5419525 B2 JP 5419525B2 JP 2009092014 A JP2009092014 A JP 2009092014A JP 2009092014 A JP2009092014 A JP 2009092014A JP 5419525 B2 JP5419525 B2 JP 5419525B2
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layer
semiconductor substrate
barrier metal
metal pattern
pattern layer
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Japanese (ja)
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JP2010245263A5 (enExample
JP2010245263A (ja
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啓 村山
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Shinko Electric Industries Co Ltd
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Shinko Electric Industries Co Ltd
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Priority to JP2009092014A priority Critical patent/JP5419525B2/ja
Priority to US12/752,736 priority patent/US8598684B2/en
Publication of JP2010245263A publication Critical patent/JP2010245263A/ja
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JP2009092014A 2009-04-06 2009-04-06 半導体装置及びその製造方法 Active JP5419525B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2009092014A JP5419525B2 (ja) 2009-04-06 2009-04-06 半導体装置及びその製造方法
US12/752,736 US8598684B2 (en) 2009-04-06 2010-04-01 Semiconductor device, and method of manufacturing the same

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JP2009092014A JP5419525B2 (ja) 2009-04-06 2009-04-06 半導体装置及びその製造方法

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JP2010245263A JP2010245263A (ja) 2010-10-28
JP2010245263A5 JP2010245263A5 (enExample) 2012-04-05
JP5419525B2 true JP5419525B2 (ja) 2014-02-19

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Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2012090292A1 (ja) * 2010-12-28 2012-07-05 富士通セミコンダクター株式会社 半導体装置の製造方法
KR101278442B1 (ko) 2012-01-19 2013-07-01 한국과학기술원 관통 실리콘 비아를 이용한 수동 이퀄라이저를 구비하는 인터포저, 그 제조 방법, 인터포저를 포함하는 적층 칩 패키지, 및 그 제조 방법
JP2015153978A (ja) * 2014-02-18 2015-08-24 キヤノン株式会社 貫通配線の作製方法
EP3118892B1 (en) * 2014-03-12 2018-05-02 Thruchip Japan Inc. Laminated semiconductor integrated circuit device

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4131648B2 (ja) * 2002-07-10 2008-08-13 株式会社東芝 半導体装置および半導体装置の製造方法
JP4327644B2 (ja) * 2004-03-31 2009-09-09 Ｎｅｃエレクトロニクス株式会社 半導体装置の製造方法
JP2006278646A (ja) * 2005-03-29 2006-10-12 Sanyo Electric Co Ltd 半導体装置の製造方法
JP5394617B2 (ja) * 2006-06-16 2014-01-22 新光電気工業株式会社 半導体装置及び半導体装置の製造方法及び基板

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