JP2009105311A5 - - Google Patents
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- Publication number
- JP2009105311A5 JP2009105311A5 JP2007277438A JP2007277438A JP2009105311A5 JP 2009105311 A5 JP2009105311 A5 JP 2009105311A5 JP 2007277438 A JP2007277438 A JP 2007277438A JP 2007277438 A JP2007277438 A JP 2007277438A JP 2009105311 A5 JP2009105311 A5 JP 2009105311A5
- Authority
- JP
- Japan
- Prior art keywords
- forming step
- pad
- semiconductor substrate
- electrode
- forming
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000758 substrate Substances 0.000 claims 19
- 239000004065 semiconductor Substances 0.000 claims 13
- 238000004519 manufacturing process Methods 0.000 claims 8
- 238000000034 method Methods 0.000 claims 8
- 230000000149 penetrating effect Effects 0.000 claims 8
- 239000011810 insulating material Substances 0.000 claims 7
- 239000002184 metal Substances 0.000 claims 6
- 229910000679 solder Inorganic materials 0.000 claims 2
- 230000015572 biosynthetic process Effects 0.000 claims 1
- 238000009792 diffusion process Methods 0.000 claims 1
- 238000009713 electroplating Methods 0.000 claims 1
- 239000000463 material Substances 0.000 claims 1
- 238000000059 patterning Methods 0.000 claims 1
- 230000002265 prevention Effects 0.000 claims 1
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007277438A JP5237607B2 (ja) | 2007-10-25 | 2007-10-25 | 基板の製造方法 |
| TW097140818A TW200926381A (en) | 2007-10-25 | 2008-10-24 | Method for producing substrate |
| US12/257,697 US7867894B2 (en) | 2007-10-25 | 2008-10-24 | Method for producing substrate |
| EP08167664A EP2053651B1 (en) | 2007-10-25 | 2008-10-27 | Method for producing substrate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007277438A JP5237607B2 (ja) | 2007-10-25 | 2007-10-25 | 基板の製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2009105311A JP2009105311A (ja) | 2009-05-14 |
| JP2009105311A5 true JP2009105311A5 (enExample) | 2010-09-09 |
| JP5237607B2 JP5237607B2 (ja) | 2013-07-17 |
Family
ID=40262148
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2007277438A Active JP5237607B2 (ja) | 2007-10-25 | 2007-10-25 | 基板の製造方法 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US7867894B2 (enExample) |
| EP (1) | EP2053651B1 (enExample) |
| JP (1) | JP5237607B2 (enExample) |
| TW (1) | TW200926381A (enExample) |
Families Citing this family (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GR20080100491A (el) * | 2008-07-23 | 2010-02-24 | Διονυσιος Χαραλαμπους Χοϊδας | Συσκευη κινητης τηλεφωνιας με ενσωματωμενη διαταξη επαληθευσης των ενδειξεων του ταξιμετρου ενος μισθωμενου οχηματος |
| JP5578808B2 (ja) * | 2009-05-15 | 2014-08-27 | 新光電気工業株式会社 | 半導体パッケージ |
| JP5644242B2 (ja) | 2009-09-09 | 2014-12-24 | 大日本印刷株式会社 | 貫通電極基板及びその製造方法 |
| JP2011187771A (ja) * | 2010-03-10 | 2011-09-22 | Omron Corp | 電極部の構造 |
| EP2482310B1 (en) * | 2011-01-27 | 2020-09-23 | Sensirion AG | Through vias in a sensor chip |
| JP5821284B2 (ja) * | 2011-05-30 | 2015-11-24 | セイコーエプソン株式会社 | 配線基板、赤外線センサー及び貫通電極形成方法 |
| JP6031746B2 (ja) * | 2011-11-01 | 2016-11-24 | セイコーエプソン株式会社 | 半導体装置の製造方法、半導体装置及び電子機器 |
| US9653401B2 (en) * | 2012-04-11 | 2017-05-16 | Nanya Technology Corporation | Method for forming buried conductive line and structure of buried conductive line |
| EP2871152B1 (en) | 2013-11-06 | 2017-05-24 | Sensirion AG | Sensor device |
| EP3001186B1 (en) | 2014-09-26 | 2018-06-06 | Sensirion AG | Sensor chip |
| EP3032227B1 (en) | 2014-12-08 | 2020-10-21 | Sensirion AG | Flow sensor package |
| JP2016029731A (ja) * | 2015-10-02 | 2016-03-03 | セイコーエプソン株式会社 | 回路基板及びセンサー |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3648585B2 (ja) * | 1997-05-27 | 2005-05-18 | カシオ計算機株式会社 | 半導体装置及びその製造方法 |
| US6943056B2 (en) * | 2002-04-16 | 2005-09-13 | Renesas Technology Corp. | Semiconductor device manufacturing method and electronic equipment using same |
| JP2004095849A (ja) * | 2002-08-30 | 2004-03-25 | Fujikura Ltd | 貫通電極付き半導体基板の製造方法、貫通電極付き半導体デバイスの製造方法 |
| US6790775B2 (en) * | 2002-10-31 | 2004-09-14 | Hewlett-Packard Development Company, L.P. | Method of forming a through-substrate interconnect |
| JP2005026582A (ja) * | 2003-07-04 | 2005-01-27 | Olympus Corp | 半導体装置及びその半導体装置の製造方法 |
| JP4524156B2 (ja) * | 2004-08-30 | 2010-08-11 | 新光電気工業株式会社 | 半導体装置及びその製造方法 |
| JP4528100B2 (ja) * | 2004-11-25 | 2010-08-18 | 新光電気工業株式会社 | 半導体装置及びその製造方法 |
| US7307348B2 (en) * | 2005-12-07 | 2007-12-11 | Micron Technology, Inc. | Semiconductor components having through wire interconnects (TWI) |
| KR100753528B1 (ko) * | 2006-01-04 | 2007-08-30 | 삼성전자주식회사 | 웨이퍼 레벨 패키지 및 이의 제조 방법 |
| US7659612B2 (en) * | 2006-04-24 | 2010-02-09 | Micron Technology, Inc. | Semiconductor components having encapsulated through wire interconnects (TWI) |
| US8034702B2 (en) * | 2007-08-16 | 2011-10-11 | Micron Technology, Inc. | Methods of forming through substrate interconnects |
-
2007
- 2007-10-25 JP JP2007277438A patent/JP5237607B2/ja active Active
-
2008
- 2008-10-24 US US12/257,697 patent/US7867894B2/en not_active Expired - Fee Related
- 2008-10-24 TW TW097140818A patent/TW200926381A/zh unknown
- 2008-10-27 EP EP08167664A patent/EP2053651B1/en not_active Ceased