JP2006135174A5 - - Google Patents

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Publication number
JP2006135174A5
JP2006135174A5 JP2004323939A JP2004323939A JP2006135174A5 JP 2006135174 A5 JP2006135174 A5 JP 2006135174A5 JP 2004323939 A JP2004323939 A JP 2004323939A JP 2004323939 A JP2004323939 A JP 2004323939A JP 2006135174 A5 JP2006135174 A5 JP 2006135174A5
Authority
JP
Japan
Prior art keywords
forming
manufacturing
resist layer
hole
substrate according
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2004323939A
Other languages
English (en)
Japanese (ja)
Other versions
JP2006135174A (ja
JP3987521B2 (ja
Filing date
Publication date
Application filed filed Critical
Priority claimed from JP2004323939A external-priority patent/JP3987521B2/ja
Priority to JP2004323939A priority Critical patent/JP3987521B2/ja
Priority to DE602005004586T priority patent/DE602005004586T2/de
Priority to EP05256299A priority patent/EP1656006B1/en
Priority to US11/247,813 priority patent/US20060096781A1/en
Priority to TW094135505A priority patent/TWI402956B/zh
Priority to KR1020050098430A priority patent/KR20060054104A/ko
Priority to CNB2005101161393A priority patent/CN100517678C/zh
Publication of JP2006135174A publication Critical patent/JP2006135174A/ja
Publication of JP2006135174A5 publication Critical patent/JP2006135174A5/ja
Publication of JP3987521B2 publication Critical patent/JP3987521B2/ja
Application granted granted Critical
Priority to US12/061,768 priority patent/US7772118B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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JP2004323939A 2004-11-08 2004-11-08 基板の製造方法 Expired - Lifetime JP3987521B2 (ja)

Priority Applications (8)

Application Number Priority Date Filing Date Title
JP2004323939A JP3987521B2 (ja) 2004-11-08 2004-11-08 基板の製造方法
DE602005004586T DE602005004586T2 (de) 2004-11-08 2005-10-10 Substrat mit hoher Zuverlässigkeit der elektrischen Verbindung einer mit Verdrahtungen verbundenen Durchkontaktierung und Verfahren zur Herstellung desselben
EP05256299A EP1656006B1 (en) 2004-11-08 2005-10-10 A substrate having high electrical connection reliability of a penetrating via connected to wirings and a method for manufacturing the same
US11/247,813 US20060096781A1 (en) 2004-11-08 2005-10-11 Substrate having high electrical connection reliability of a penetrating via connected to wirings and a method for manufacturing the same
TW094135505A TWI402956B (zh) 2004-11-08 2005-10-12 基材之製造方法
KR1020050098430A KR20060054104A (ko) 2004-11-08 2005-10-19 배선에 접속된 높은 전기적인 접속 신뢰도의 관통 비아를갖는 기판 및 그 제조 방법
CNB2005101161393A CN100517678C (zh) 2004-11-08 2005-10-24 具有连接到布线的贯穿通道的衬底及其制造方法
US12/061,768 US7772118B2 (en) 2004-11-08 2008-04-03 Substrate having high electrical connection reliability of a penetrating via connected to wirings and a method for manufacturing the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004323939A JP3987521B2 (ja) 2004-11-08 2004-11-08 基板の製造方法

Publications (3)

Publication Number Publication Date
JP2006135174A JP2006135174A (ja) 2006-05-25
JP2006135174A5 true JP2006135174A5 (enExample) 2006-08-31
JP3987521B2 JP3987521B2 (ja) 2007-10-10

Family

ID=35784728

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2004323939A Expired - Lifetime JP3987521B2 (ja) 2004-11-08 2004-11-08 基板の製造方法

Country Status (7)

Country Link
US (2) US20060096781A1 (enExample)
EP (1) EP1656006B1 (enExample)
JP (1) JP3987521B2 (enExample)
KR (1) KR20060054104A (enExample)
CN (1) CN100517678C (enExample)
DE (1) DE602005004586T2 (enExample)
TW (1) TWI402956B (enExample)

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JP5194537B2 (ja) * 2007-04-23 2013-05-08 株式会社デンソー 半導体装置およびその製造方法
JP5193503B2 (ja) * 2007-06-04 2013-05-08 新光電気工業株式会社 貫通電極付き基板及びその製造方法
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JP5297139B2 (ja) 2008-10-09 2013-09-25 新光電気工業株式会社 配線基板及びその製造方法
US8455357B2 (en) * 2008-10-10 2013-06-04 Taiwan Semiconductor Manufacturing Co., Ltd. Method of plating through wafer vias in a wafer for 3D packaging
JP5246103B2 (ja) 2008-10-16 2013-07-24 大日本印刷株式会社 貫通電極基板の製造方法
JP5350745B2 (ja) 2008-10-21 2013-11-27 新光電気工業株式会社 配線基板
JP5193809B2 (ja) 2008-11-05 2013-05-08 新光電気工業株式会社 配線基板及びその製造方法
TWI392069B (zh) 2009-11-24 2013-04-01 日月光半導體製造股份有限公司 封裝結構及其封裝製程
TWI446420B (zh) 2010-08-27 2014-07-21 Advanced Semiconductor Eng 用於半導體製程之載體分離方法
TWI445152B (zh) 2010-08-30 2014-07-11 日月光半導體製造股份有限公司 半導體結構及其製作方法
US9007273B2 (en) 2010-09-09 2015-04-14 Advances Semiconductor Engineering, Inc. Semiconductor package integrated with conformal shield and antenna
TWI434387B (zh) 2010-10-11 2014-04-11 日月光半導體製造股份有限公司 具有穿導孔之半導體裝置及具有穿導孔之半導體裝置之封裝結構及其製造方法
TWI527174B (zh) 2010-11-19 2016-03-21 日月光半導體製造股份有限公司 具有半導體元件之封裝結構
US9077344B2 (en) * 2010-12-07 2015-07-07 Atmel Corporation Substrate for electrical component and method
KR20120077876A (ko) * 2010-12-31 2012-07-10 삼성전자주식회사 이종 기판 접합 구조 및 방법
TWI445155B (zh) 2011-01-06 2014-07-11 日月光半導體製造股份有限公司 堆疊式封裝結構及其製造方法
US8853819B2 (en) 2011-01-07 2014-10-07 Advanced Semiconductor Engineering, Inc. Semiconductor structure with passive element network and manufacturing method thereof
JP2012195465A (ja) * 2011-03-17 2012-10-11 Canon Inc 貫通電極基板及びその製造方法
US8541883B2 (en) 2011-11-29 2013-09-24 Advanced Semiconductor Engineering, Inc. Semiconductor device having shielded conductive vias
US8975157B2 (en) 2012-02-08 2015-03-10 Advanced Semiconductor Engineering, Inc. Carrier bonding and detaching processes for a semiconductor wafer
US8963316B2 (en) 2012-02-15 2015-02-24 Advanced Semiconductor Engineering, Inc. Semiconductor device and method for manufacturing the same
US8786060B2 (en) 2012-05-04 2014-07-22 Advanced Semiconductor Engineering, Inc. Semiconductor package integrated with conformal shield and antenna
US9153542B2 (en) 2012-08-01 2015-10-06 Advanced Semiconductor Engineering, Inc. Semiconductor package having an antenna and manufacturing method thereof
US8937387B2 (en) 2012-11-07 2015-01-20 Advanced Semiconductor Engineering, Inc. Semiconductor device with conductive vias
US8952542B2 (en) 2012-11-14 2015-02-10 Advanced Semiconductor Engineering, Inc. Method for dicing a semiconductor wafer having through silicon vias and resultant structures
JP6196893B2 (ja) * 2012-12-18 2017-09-13 新光電気工業株式会社 半導体装置の製造方法
US9406552B2 (en) 2012-12-20 2016-08-02 Advanced Semiconductor Engineering, Inc. Semiconductor device having conductive via and manufacturing process
US8841751B2 (en) 2013-01-23 2014-09-23 Advanced Semiconductor Engineering, Inc. Through silicon vias for semiconductor devices and manufacturing method thereof
US9978688B2 (en) 2013-02-28 2018-05-22 Advanced Semiconductor Engineering, Inc. Semiconductor package having a waveguide antenna and manufacturing method thereof
US9089268B2 (en) 2013-03-13 2015-07-28 Advanced Semiconductor Engineering, Inc. Neural sensing device and method for making the same
US9173583B2 (en) 2013-03-15 2015-11-03 Advanced Semiconductor Engineering, Inc. Neural sensing device and method for making the same
US8987734B2 (en) 2013-03-15 2015-03-24 Advanced Semiconductor Engineering, Inc. Semiconductor wafer, semiconductor process and semiconductor package
CN104659017A (zh) * 2013-11-20 2015-05-27 宏启胜精密电子(秦皇岛)有限公司 中介板及其制作方法
KR102337969B1 (ko) * 2014-10-22 2021-12-09 닛본 이따 가라스 가부시끼가이샤 유리 기판의 제조 방법 및 판형상의 유리
US9633930B2 (en) * 2014-11-26 2017-04-25 Kookmin University Industry Academy Cooperation Foundation Method of forming through-hole in silicon substrate, method of forming electrical connection element penetrating silicon substrate and semiconductor device manufactured thereby
JP2016213283A (ja) 2015-05-01 2016-12-15 ソニー株式会社 製造方法、および貫通電極付配線基板
CN105070682B (zh) * 2015-07-17 2018-05-29 上海交通大学 一种高效制备硅转接板的方法
JP6191728B2 (ja) * 2015-08-10 2017-09-06 大日本印刷株式会社 イメージセンサモジュール
JP2017199854A (ja) 2016-04-28 2017-11-02 Tdk株式会社 貫通配線基板
JP6790847B2 (ja) * 2017-01-13 2020-11-25 凸版印刷株式会社 配線基板、多層配線基板および配線基板の製造方法
WO2018199017A1 (ja) * 2017-04-28 2018-11-01 日東電工株式会社 配線回路基板、および、撮像装置
JP7105549B2 (ja) 2017-04-28 2022-07-25 日東電工株式会社 配線回路基板、および、撮像装置

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JPS63137498A (ja) * 1986-11-28 1988-06-09 松下電工株式会社 スル−ホ−ルプリント板の製法
JPH01258457A (ja) 1988-04-08 1989-10-16 Nec Corp 半導体集積回路の実装構造およびその製造方法
US5071359A (en) * 1990-04-27 1991-12-10 Rogers Corporation Array connector
US5819406A (en) * 1990-08-29 1998-10-13 Canon Kabushiki Kaisha Method for forming an electrical circuit member
JP3213037B2 (ja) 1992-01-07 2001-09-25 日東電工株式会社 加工フィルムの製造方法
US5638598A (en) * 1993-06-17 1997-06-17 Hitachi Chemical Company, Ltd. Process for producing a printed wiring board
US6055723A (en) * 1998-06-01 2000-05-02 Trw Inc. Process of fabricating high frequency connections to high temperature superconductor circuits
JP2002064270A (ja) * 2000-08-17 2002-02-28 Matsushita Electric Ind Co Ltd 回路基板とその製造方法
US6518514B2 (en) * 2000-08-21 2003-02-11 Matsushita Electric Industrial Co., Ltd. Circuit board and production of the same
JP4703061B2 (ja) * 2001-08-30 2011-06-15 富士通株式会社 薄膜回路基板の製造方法およびビア形成基板の形成方法
JP3826007B2 (ja) * 2001-10-11 2006-09-27 シャープ株式会社 配線接続構造およびこれを用いた送信機
JP3807312B2 (ja) * 2002-01-18 2006-08-09 富士通株式会社 プリント基板とその製造方法
TW523842B (en) * 2002-03-22 2003-03-11 Advanced Chip Eng Tech Inc Method for manufacturing i/o terminals and the structure thereof
JP2004146742A (ja) 2002-10-28 2004-05-20 Shinko Electric Ind Co Ltd 配線基板の製造方法
JP4287133B2 (ja) * 2002-12-11 2009-07-01 大日本印刷株式会社 スルーホール配線基板の製造方法
KR100691725B1 (ko) * 2002-12-11 2007-03-12 다이니폰 인사츠 가부시키가이샤 다층 배선기판 및 그 제조 방법
JP4019960B2 (ja) * 2003-01-31 2007-12-12 三菱電機株式会社 基板の製造方法
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