JP2011061116A5 - - Google Patents

Download PDF

Info

Publication number
JP2011061116A5
JP2011061116A5 JP2009211414A JP2009211414A JP2011061116A5 JP 2011061116 A5 JP2011061116 A5 JP 2011061116A5 JP 2009211414 A JP2009211414 A JP 2009211414A JP 2009211414 A JP2009211414 A JP 2009211414A JP 2011061116 A5 JP2011061116 A5 JP 2011061116A5
Authority
JP
Japan
Prior art keywords
resin substrate
semiconductor chip
semiconductor device
back surface
support plate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2009211414A
Other languages
English (en)
Japanese (ja)
Other versions
JP5588137B2 (ja
JP2011061116A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2009211414A priority Critical patent/JP5588137B2/ja
Priority claimed from JP2009211414A external-priority patent/JP5588137B2/ja
Priority to US12/856,934 priority patent/US20110062578A1/en
Publication of JP2011061116A publication Critical patent/JP2011061116A/ja
Publication of JP2011061116A5 publication Critical patent/JP2011061116A5/ja
Application granted granted Critical
Publication of JP5588137B2 publication Critical patent/JP5588137B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

JP2009211414A 2009-09-14 2009-09-14 半導体装置の製造方法 Active JP5588137B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2009211414A JP5588137B2 (ja) 2009-09-14 2009-09-14 半導体装置の製造方法
US12/856,934 US20110062578A1 (en) 2009-09-14 2010-08-16 Semiconductor device and method of manufacturing the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2009211414A JP5588137B2 (ja) 2009-09-14 2009-09-14 半導体装置の製造方法

Publications (3)

Publication Number Publication Date
JP2011061116A JP2011061116A (ja) 2011-03-24
JP2011061116A5 true JP2011061116A5 (enExample) 2012-08-16
JP5588137B2 JP5588137B2 (ja) 2014-09-10

Family

ID=43729684

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2009211414A Active JP5588137B2 (ja) 2009-09-14 2009-09-14 半導体装置の製造方法

Country Status (2)

Country Link
US (1) US20110062578A1 (enExample)
JP (1) JP5588137B2 (enExample)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8901755B2 (en) * 2012-03-20 2014-12-02 Stats Chippac, Ltd. Semiconductor device and method of forming conductive layer over metal substrate for electrical interconnect of semiconductor die
US9673162B2 (en) * 2012-09-13 2017-06-06 Nxp Usa, Inc. High power semiconductor package subsystems
WO2014120807A1 (en) * 2013-01-29 2014-08-07 The Trustees Of Boston College High thermal conductivity materials for thermal management applications
US10141201B2 (en) * 2014-06-13 2018-11-27 Taiwan Semiconductor Manufacturing Company Integrated circuit packages and methods of forming same
US20200258750A1 (en) * 2017-08-17 2020-08-13 Semiconductor Components Industries, Llc Die support structures and related methods
US11264318B2 (en) * 2017-03-08 2022-03-01 Mitsubishi Electric Corporation Semiconductor device, method for manufacturing the same, and semiconductor module
WO2019021720A1 (ja) * 2017-07-24 2019-01-31 株式会社村田製作所 半導体装置及び半導体装置の製造方法
US11404276B2 (en) * 2017-08-17 2022-08-02 Semiconductor Components Industries, Llc Semiconductor packages with thin die and related methods
US12230502B2 (en) * 2017-08-17 2025-02-18 Semiconductor Components Industries, Llc Semiconductor package stress balance structures and related methods
KR102073956B1 (ko) * 2017-11-29 2020-02-05 삼성전자주식회사 팬-아웃 반도체 패키지
US10510595B2 (en) * 2018-04-30 2019-12-17 Taiwan Semiconductor Manufacturing Company, Ltd. Integrated fan-out packages and methods of forming the same
US10651131B2 (en) 2018-06-29 2020-05-12 Taiwan Semiconductor Manufacturing Company, Ltd. Supporting InFO packages to reduce warpage
US10998202B2 (en) * 2018-09-27 2021-05-04 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor package and manufacturing method thereof

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06209054A (ja) * 1993-01-08 1994-07-26 Mitsubishi Electric Corp 半導体装置
JPH07183425A (ja) * 1993-12-24 1995-07-21 Toshiba Corp 半導体装置とその製造方法
JPH0955459A (ja) * 1995-06-06 1997-02-25 Seiko Epson Corp 半導体装置
US20020020898A1 (en) * 2000-08-16 2002-02-21 Vu Quat T. Microelectronic substrates with integrated devices
US6734534B1 (en) * 2000-08-16 2004-05-11 Intel Corporation Microelectronic substrate with integrated devices
US6423570B1 (en) * 2000-10-18 2002-07-23 Intel Corporation Method to protect an encapsulated die package during back grinding with a solder metallization layer and devices formed thereby
JP3844467B2 (ja) * 2003-01-08 2006-11-15 沖電気工業株式会社 半導体装置及びその製造方法
JP2006222164A (ja) * 2005-02-08 2006-08-24 Shinko Electric Ind Co Ltd 半導体装置及びその製造方法
US8101868B2 (en) * 2005-10-14 2012-01-24 Ibiden Co., Ltd. Multilayered printed circuit board and method for manufacturing the same
JP4950693B2 (ja) * 2007-02-19 2012-06-13 株式会社フジクラ 電子部品内蔵型配線基板及びその実装部品

Similar Documents

Publication Publication Date Title
JP2011061116A5 (enExample)
JP5607758B2 (ja) 半導体をパッケージングする方法
TWI337775B (en) Partially patterned lead frames and methods of making and using the same in semiconductor packaging
JP2009194322A5 (enExample)
TWI426584B (zh) 半導體封裝件及其製法
JP2009164481A5 (enExample)
JP2013229542A5 (enExample)
JP2011014681A5 (ja) 半導体装置及びその製造方法
TW200509333A (en) Method for fabricating thermally enhanced semiconductor device
JP2011119502A5 (enExample)
JP2009105311A5 (enExample)
JP2010267805A5 (enExample)
JP2010087221A5 (enExample)
JP2017212376A5 (enExample)
JP2011129767A5 (ja) 半導体装置及びその製造方法
JP2010062430A5 (enExample)
EP2442370A3 (en) Package structure of concentrated photovoltaic cell
JP2016518725A5 (enExample)
JP2009231815A5 (enExample)
JP2009129982A5 (enExample)
JP2011114304A5 (enExample)
JP2011054703A5 (enExample)
TWI543412B (zh) 發光二極體及其製造方法
JP2005260079A5 (enExample)
JP2009049134A5 (enExample)