JP2011249718A5 - - Google Patents

Download PDF

Info

Publication number
JP2011249718A5
JP2011249718A5 JP2010124013A JP2010124013A JP2011249718A5 JP 2011249718 A5 JP2011249718 A5 JP 2011249718A5 JP 2010124013 A JP2010124013 A JP 2010124013A JP 2010124013 A JP2010124013 A JP 2010124013A JP 2011249718 A5 JP2011249718 A5 JP 2011249718A5
Authority
JP
Japan
Prior art keywords
semiconductor substrate
electrode
back surface
insulating portion
groove
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2010124013A
Other languages
English (en)
Japanese (ja)
Other versions
JP2011249718A (ja
JP5352534B2 (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2010124013A priority Critical patent/JP5352534B2/ja
Priority claimed from JP2010124013A external-priority patent/JP5352534B2/ja
Priority to CN2011800030798A priority patent/CN102473640A/zh
Priority to PCT/JP2011/001825 priority patent/WO2011151961A1/ja
Priority to US13/387,204 priority patent/US20120119384A1/en
Publication of JP2011249718A publication Critical patent/JP2011249718A/ja
Publication of JP2011249718A5 publication Critical patent/JP2011249718A5/ja
Application granted granted Critical
Publication of JP5352534B2 publication Critical patent/JP5352534B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

JP2010124013A 2010-05-31 2010-05-31 半導体装置及びその製造方法 Expired - Fee Related JP5352534B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2010124013A JP5352534B2 (ja) 2010-05-31 2010-05-31 半導体装置及びその製造方法
CN2011800030798A CN102473640A (zh) 2010-05-31 2011-03-28 半导体装置及其制造方法
PCT/JP2011/001825 WO2011151961A1 (ja) 2010-05-31 2011-03-28 半導体装置及びその製造方法
US13/387,204 US20120119384A1 (en) 2010-05-31 2011-03-28 Semiconductor device and manufacturing method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2010124013A JP5352534B2 (ja) 2010-05-31 2010-05-31 半導体装置及びその製造方法

Publications (3)

Publication Number Publication Date
JP2011249718A JP2011249718A (ja) 2011-12-08
JP2011249718A5 true JP2011249718A5 (enExample) 2012-12-27
JP5352534B2 JP5352534B2 (ja) 2013-11-27

Family

ID=45066355

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2010124013A Expired - Fee Related JP5352534B2 (ja) 2010-05-31 2010-05-31 半導体装置及びその製造方法

Country Status (4)

Country Link
US (1) US20120119384A1 (enExample)
JP (1) JP5352534B2 (enExample)
CN (1) CN102473640A (enExample)
WO (1) WO2011151961A1 (enExample)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9559001B2 (en) * 2010-02-09 2017-01-31 Xintec Inc. Chip package and method for forming the same
US9437783B2 (en) * 2012-05-08 2016-09-06 Cree, Inc. Light emitting diode (LED) contact structures and process for fabricating the same
CN103367139B (zh) * 2013-07-11 2016-08-24 华进半导体封装先导技术研发中心有限公司 一种tsv孔底部介质层刻蚀方法
MA36343B1 (fr) * 2013-10-14 2016-04-29 Nemotek Technologies Procédé de métallisation en cuivre destiné à la fabrication d'un circuit intégré en utilisant la technologie wafer level packaging 3d
JP2016174101A (ja) 2015-03-17 2016-09-29 株式会社東芝 半導体装置およびその製造方法
US20180122749A1 (en) * 2016-11-01 2018-05-03 Advanced Semiconductor Engineering, Inc. Semiconductor wafer, semiconductor package and method for manufacturing the same
KR102493464B1 (ko) 2018-07-19 2023-01-30 삼성전자 주식회사 집적회로 장치 및 이의 제조 방법
JP7067448B2 (ja) * 2018-12-10 2022-05-16 三菱電機株式会社 半導体装置の製造方法、半導体装置
JP2020098849A (ja) 2018-12-18 2020-06-25 ソニーセミコンダクタソリューションズ株式会社 半導体装置
CN112185984B (zh) * 2020-09-17 2022-07-12 武汉华星光电半导体显示技术有限公司 一种阵列基板及显示面板

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5829624B2 (ja) * 1978-09-11 1983-06-23 富士通株式会社 架橋配線方法
JP2003198122A (ja) * 2001-12-28 2003-07-11 Kanegafuchi Chem Ind Co Ltd 配線板の製造方法
JP4145301B2 (ja) * 2003-01-15 2008-09-03 富士通株式会社 半導体装置及び三次元実装半導体装置
JP4331033B2 (ja) * 2004-03-29 2009-09-16 浜松ホトニクス株式会社 半導体光検出素子及びその製造方法
JP4966487B2 (ja) * 2004-09-29 2012-07-04 オンセミコンダクター・トレーディング・リミテッド 半導体装置及びその製造方法
TWI303864B (en) * 2004-10-26 2008-12-01 Sanyo Electric Co Semiconductor device and method for making the same
JP5036127B2 (ja) * 2004-10-26 2012-09-26 オンセミコンダクター・トレーディング・リミテッド 半導体装置の製造方法
US7633167B2 (en) * 2005-09-29 2009-12-15 Nec Electronics Corporation Semiconductor device and method for manufacturing same
JP5021992B2 (ja) * 2005-09-29 2012-09-12 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
JP4799543B2 (ja) * 2007-12-27 2011-10-26 株式会社東芝 半導体パッケージ及びカメラモジュール
JP5596919B2 (ja) * 2008-11-26 2014-09-24 キヤノン株式会社 半導体装置の製造方法

Similar Documents

Publication Publication Date Title
JP2011249718A5 (enExample)
JP2009164481A5 (enExample)
JP2010147281A5 (ja) 半導体装置
JP2009033145A5 (enExample)
JP2009194322A5 (enExample)
WO2012074783A3 (en) Low-profile microelectronic package, method of manufacturing same, and electronic assembly containing same
JP2008160160A5 (enExample)
JP2013004881A5 (enExample)
JP2012084865A5 (ja) 半導体装置の作製方法
JP2008270759A5 (enExample)
TW200629444A (en) Semiconductor device and manufacturing method thereof
EP2408035A3 (en) Two terminal resistive switching device structure and method of fabricating
JP2012068627A5 (ja) 半導体装置の作製方法
JP2009105311A5 (enExample)
JP2011187800A5 (enExample)
JP2012028771A5 (enExample)
JP2012069761A5 (enExample)
JP2012109350A5 (enExample)
JP2012114148A5 (enExample)
JP2014204005A5 (enExample)
JP2014013810A5 (enExample)
JP2013520844A5 (enExample)
JP2008270758A5 (enExample)
JP2009278072A5 (enExample)
JP2011086941A5 (enExample)