JP2007158129A5 - - Google Patents

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Publication number
JP2007158129A5
JP2007158129A5 JP2005352723A JP2005352723A JP2007158129A5 JP 2007158129 A5 JP2007158129 A5 JP 2007158129A5 JP 2005352723 A JP2005352723 A JP 2005352723A JP 2005352723 A JP2005352723 A JP 2005352723A JP 2007158129 A5 JP2007158129 A5 JP 2007158129A5
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JP
Japan
Prior art keywords
semiconductor element
layer
oxide
metal
oxide layer
Prior art date
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Granted
Application number
JP2005352723A
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English (en)
Japanese (ja)
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JP2007158129A (ja
JP4738999B2 (ja
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Priority to JP2005352723A priority Critical patent/JP4738999B2/ja
Priority claimed from JP2005352723A external-priority patent/JP4738999B2/ja
Publication of JP2007158129A publication Critical patent/JP2007158129A/ja
Publication of JP2007158129A5 publication Critical patent/JP2007158129A5/ja
Application granted granted Critical
Publication of JP4738999B2 publication Critical patent/JP4738999B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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JP2005352723A 2005-12-06 2005-12-06 半導体光素子の製造方法 Expired - Lifetime JP4738999B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2005352723A JP4738999B2 (ja) 2005-12-06 2005-12-06 半導体光素子の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005352723A JP4738999B2 (ja) 2005-12-06 2005-12-06 半導体光素子の製造方法

Publications (3)

Publication Number Publication Date
JP2007158129A JP2007158129A (ja) 2007-06-21
JP2007158129A5 true JP2007158129A5 (enExample) 2008-08-14
JP4738999B2 JP4738999B2 (ja) 2011-08-03

Family

ID=38242066

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2005352723A Expired - Lifetime JP4738999B2 (ja) 2005-12-06 2005-12-06 半導体光素子の製造方法

Country Status (1)

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JP (1) JP4738999B2 (enExample)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20090072980A (ko) * 2007-12-28 2009-07-02 서울옵토디바이스주식회사 발광 다이오드 및 그 제조방법
JP2010171376A (ja) * 2008-12-26 2010-08-05 Toyoda Gosei Co Ltd Ｉｉｉ族窒化物系化合物半導体発光素子
EP2660883B1 (en) 2009-12-09 2019-03-27 LG Innotek Co., Ltd. Light emitting device, light emitting device manufacturing method, light emitting package, and lighting system
JP5768759B2 (ja) * 2012-04-27 2015-08-26 豊田合成株式会社 半導体発光素子
CN103682020A (zh) * 2012-08-31 2014-03-26 展晶科技(深圳)有限公司 发光二极管晶粒的制造方法
JP6295693B2 (ja) * 2014-02-07 2018-03-20 ソニー株式会社 撮像装置
DE102016104280A1 (de) * 2016-03-09 2017-09-14 Osram Opto Semiconductors Gmbh Bauelement und Verfahren zur Herstellung eines Bauelements
CN106449899B (zh) * 2016-08-31 2019-07-02 中联西北工程设计研究院有限公司 一种垂直结构蓝光led芯片的制备方法
CN109873062B (zh) * 2019-01-29 2020-06-16 南昌大学 一种带有复合反射镜的AlGaInP红色发光二极管器件结构

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3846150B2 (ja) * 2000-03-27 2006-11-15 豊田合成株式会社 Ｉｉｉ族窒化物系化合物半導体素子および電極形成方法
JP4604488B2 (ja) * 2003-12-26 2011-01-05 日亜化学工業株式会社 窒化物半導体発光素子およびその製造方法
JP4956902B2 (ja) * 2005-03-18 2012-06-20 三菱化学株式会社 ＧａＮ系発光ダイオードおよびそれを用いた発光装置

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