JP4738999B2 - 半導体光素子の製造方法 - Google Patents

半導体光素子の製造方法 Download PDF

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Publication number
JP4738999B2
JP4738999B2 JP2005352723A JP2005352723A JP4738999B2 JP 4738999 B2 JP4738999 B2 JP 4738999B2 JP 2005352723 A JP2005352723 A JP 2005352723A JP 2005352723 A JP2005352723 A JP 2005352723A JP 4738999 B2 JP4738999 B2 JP 4738999B2
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layer
optical device
metal
semiconductor optical
group iii
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JP2005352723A
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Japanese (ja)
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JP2007158129A5 (enExample
JP2007158129A (ja
Inventor
俊也 上村
実希 守山
茂美 堀内
隆弘 小澤
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Toyoda Gosei Co Ltd
Toyota Central R&D Labs Inc
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Toyoda Gosei Co Ltd
Toyota Central R&D Labs Inc
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JP2005352723A 2005-12-06 2005-12-06 半導体光素子の製造方法 Expired - Lifetime JP4738999B2 (ja)

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JP2005352723A JP4738999B2 (ja) 2005-12-06 2005-12-06 半導体光素子の製造方法

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JP2005352723A JP4738999B2 (ja) 2005-12-06 2005-12-06 半導体光素子の製造方法

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JP2007158129A JP2007158129A (ja) 2007-06-21
JP2007158129A5 JP2007158129A5 (enExample) 2008-08-14
JP4738999B2 true JP4738999B2 (ja) 2011-08-03

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Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20090072980A (ko) * 2007-12-28 2009-07-02 서울옵토디바이스주식회사 발광 다이오드 및 그 제조방법
JP2010171376A (ja) * 2008-12-26 2010-08-05 Toyoda Gosei Co Ltd Ｉｉｉ族窒化物系化合物半導体発光素子
EP2942823B1 (en) 2009-12-09 2021-05-05 LG Innotek Co., Ltd. Light emitting device, light emitting package, and lighting system
JP5768759B2 (ja) 2012-04-27 2015-08-26 豊田合成株式会社 半導体発光素子
CN103682020A (zh) * 2012-08-31 2014-03-26 展晶科技(深圳)有限公司 发光二极管晶粒的制造方法
JP6295693B2 (ja) * 2014-02-07 2018-03-20 ソニー株式会社 撮像装置
DE102016104280A1 (de) * 2016-03-09 2017-09-14 Osram Opto Semiconductors Gmbh Bauelement und Verfahren zur Herstellung eines Bauelements
CN106449899B (zh) * 2016-08-31 2019-07-02 中联西北工程设计研究院有限公司 一种垂直结构蓝光led芯片的制备方法
CN109873062B (zh) * 2019-01-29 2020-06-16 南昌大学 一种带有复合反射镜的AlGaInP红色发光二极管器件结构

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3846150B2 (ja) * 2000-03-27 2006-11-15 豊田合成株式会社 Ｉｉｉ族窒化物系化合物半導体素子および電極形成方法
JP4604488B2 (ja) * 2003-12-26 2011-01-05 日亜化学工業株式会社 窒化物半導体発光素子およびその製造方法
JP4956902B2 (ja) * 2005-03-18 2012-06-20 三菱化学株式会社 ＧａＮ系発光ダイオードおよびそれを用いた発光装置

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