JP4507532B2 - 窒化物半導体素子 - Google Patents

窒化物半導体素子 Download PDF

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Publication number
JP4507532B2
JP4507532B2 JP2003300714A JP2003300714A JP4507532B2 JP 4507532 B2 JP4507532 B2 JP 4507532B2 JP 2003300714 A JP2003300714 A JP 2003300714A JP 2003300714 A JP2003300714 A JP 2003300714A JP 4507532 B2 JP4507532 B2 JP 4507532B2
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Prior art keywords
nitride semiconductor
electrode
layer
semiconductor layer
type
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JP2003300714A
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Japanese (ja)
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JP2004006991A5 (enExample
JP2004006991A (ja
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真也 園部
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Nichia Corp
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Nichia Corp
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Priority to US10/676,267 priority patent/US6921928B2/en
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Publication of JP2004006991A5 publication Critical patent/JP2004006991A5/ja
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