KR101449005B1 - 반도체 발광소자 및 그 제조방법 - Google Patents

반도체 발광소자 및 그 제조방법 Download PDF

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Publication number
KR101449005B1
KR101449005B1 KR1020070120649A KR20070120649A KR101449005B1 KR 101449005 B1 KR101449005 B1 KR 101449005B1 KR 1020070120649 A KR1020070120649 A KR 1020070120649A KR 20070120649 A KR20070120649 A KR 20070120649A KR 101449005 B1 KR101449005 B1 KR 101449005B1
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KR
South Korea
Prior art keywords
layer
light emitting
conductive
emitting device
semiconductor layer
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Expired - Fee Related
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KR1020070120649A
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English (en)
Korean (ko)
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KR20090054008A (ko
Inventor
박형조
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엘지이노텍 주식회사
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Priority to KR1020070120649A priority Critical patent/KR101449005B1/ko
Application filed by 엘지이노텍 주식회사 filed Critical 엘지이노텍 주식회사
Priority to JP2010534897A priority patent/JP5550078B2/ja
Priority to US12/743,197 priority patent/US8253156B2/en
Priority to EP08855034.8A priority patent/EP2201618B1/en
Priority to EP12166234.0A priority patent/EP2485280B1/en
Priority to DE202008018199U priority patent/DE202008018199U1/de
Priority to CN2008801178926A priority patent/CN101874308B/zh
Priority to PCT/KR2008/006947 priority patent/WO2009069929A2/en
Priority to CN201210251517.9A priority patent/CN102751405B/zh
Publication of KR20090054008A publication Critical patent/KR20090054008A/ko
Priority to US13/560,812 priority patent/US8618571B2/en
Priority to US13/936,032 priority patent/US8969902B2/en
Priority to JP2014007182A priority patent/JP2014096603A/ja
Application granted granted Critical
Publication of KR101449005B1 publication Critical patent/KR101449005B1/ko
Priority to US14/599,184 priority patent/US9472739B2/en
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/855—Optical field-shaping means, e.g. lenses
    • H10H20/856—Reflecting means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/814—Bodies having reflecting means, e.g. semiconductor Bragg reflectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H10H20/82—Roughened surfaces, e.g. at the interface between epitaxial layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/018—Bonding of wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H10H20/8316—Multi-layer electrodes comprising at least one discontinuous layer

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  • Led Devices (AREA)
KR1020070120649A 2007-11-26 2007-11-26 반도체 발광소자 및 그 제조방법 Expired - Fee Related KR101449005B1 (ko)

Priority Applications (13)

Application Number Priority Date Filing Date Title
KR1020070120649A KR101449005B1 (ko) 2007-11-26 2007-11-26 반도체 발광소자 및 그 제조방법
PCT/KR2008/006947 WO2009069929A2 (en) 2007-11-26 2008-11-25 Semiconductor light emitting device
EP08855034.8A EP2201618B1 (en) 2007-11-26 2008-11-25 Semiconductor light emitting device
EP12166234.0A EP2485280B1 (en) 2007-11-26 2008-11-25 Semiconductor light emitting device
DE202008018199U DE202008018199U1 (de) 2007-11-26 2008-11-25 Lichtemittierende Halbleitervorrichtung
CN2008801178926A CN101874308B (zh) 2007-11-26 2008-11-25 半导体发光器件
JP2010534897A JP5550078B2 (ja) 2007-11-26 2008-11-25 半導体発光素子
CN201210251517.9A CN102751405B (zh) 2007-11-26 2008-11-25 半导体发光器件
US12/743,197 US8253156B2 (en) 2007-11-26 2008-11-25 Semiconductor light emitting device
US13/560,812 US8618571B2 (en) 2007-11-26 2012-07-27 Semiconductor light emitting device having a reflective layer
US13/936,032 US8969902B2 (en) 2007-11-26 2013-07-05 Semiconductor light emitting device
JP2014007182A JP2014096603A (ja) 2007-11-26 2014-01-17 半導体発光素子
US14/599,184 US9472739B2 (en) 2007-11-26 2015-01-16 Semiconductor light emitting device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020070120649A KR101449005B1 (ko) 2007-11-26 2007-11-26 반도체 발광소자 및 그 제조방법

Publications (2)

Publication Number Publication Date
KR20090054008A KR20090054008A (ko) 2009-05-29
KR101449005B1 true KR101449005B1 (ko) 2014-10-08

Family

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Family Applications (1)

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KR1020070120649A Expired - Fee Related KR101449005B1 (ko) 2007-11-26 2007-11-26 반도체 발광소자 및 그 제조방법

Country Status (7)

Country Link
US (4) US8253156B2 (enExample)
EP (2) EP2201618B1 (enExample)
JP (2) JP5550078B2 (enExample)
KR (1) KR101449005B1 (enExample)
CN (2) CN102751405B (enExample)
DE (1) DE202008018199U1 (enExample)
WO (1) WO2009069929A2 (enExample)

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KR101550922B1 (ko) * 2009-03-10 2015-09-07 엘지이노텍 주식회사 발광 소자
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KR101072034B1 (ko) 2009-10-15 2011-10-10 엘지이노텍 주식회사 반도체 발광소자 및 그 제조방법
KR101014013B1 (ko) 2009-10-15 2011-02-10 엘지이노텍 주식회사 반도체 발광소자 및 그 제조방법
KR101081193B1 (ko) 2009-10-15 2011-11-07 엘지이노텍 주식회사 반도체 발광소자 및 그 제조방법
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KR101064020B1 (ko) 2010-04-23 2011-09-08 엘지이노텍 주식회사 발광 소자 및 그 제조방법
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CN103346227B (zh) * 2013-07-03 2016-04-06 河北工业大学 一种氮化镓基发光二极管芯片及其制备方法
CN104218134B (zh) * 2014-09-15 2017-02-15 映瑞光电科技(上海)有限公司 一种具有特殊粗化形貌的led垂直芯片结构及其制备方法
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KR102346212B1 (ko) * 2018-12-31 2022-01-03 주식회사 나노엑스 양면 발광 led 칩
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Also Published As

Publication number Publication date
US8969902B2 (en) 2015-03-03
JP2014096603A (ja) 2014-05-22
US20120286316A1 (en) 2012-11-15
CN102751405B (zh) 2016-04-13
US20150129920A1 (en) 2015-05-14
CN101874308B (zh) 2012-09-05
WO2009069929A3 (en) 2009-09-03
KR20090054008A (ko) 2009-05-29
EP2201618A4 (en) 2011-03-30
JP5550078B2 (ja) 2014-07-16
EP2485280A3 (en) 2013-01-16
EP2485280B1 (en) 2015-09-23
US9472739B2 (en) 2016-10-18
US8618571B2 (en) 2013-12-31
CN101874308A (zh) 2010-10-27
DE202008018199U1 (de) 2012-02-23
EP2201618B1 (en) 2014-06-18
US8253156B2 (en) 2012-08-28
US20130292732A1 (en) 2013-11-07
EP2485280A2 (en) 2012-08-08
US20100264440A1 (en) 2010-10-21
EP2201618A2 (en) 2010-06-30
WO2009069929A2 (en) 2009-06-04
CN102751405A (zh) 2012-10-24
JP2011504660A (ja) 2011-02-10

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