DE202008018199U1 - Lichtemittierende Halbleitervorrichtung - Google Patents

Lichtemittierende Halbleitervorrichtung Download PDF

Info

Publication number
DE202008018199U1
DE202008018199U1 DE202008018199U DE202008018199U DE202008018199U1 DE 202008018199 U1 DE202008018199 U1 DE 202008018199U1 DE 202008018199 U DE202008018199 U DE 202008018199U DE 202008018199 U DE202008018199 U DE 202008018199U DE 202008018199 U1 DE202008018199 U1 DE 202008018199U1
Authority
DE
Germany
Prior art keywords
layer
light
substance
emitting device
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE202008018199U
Other languages
German (de)
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
LG Innotek Co Ltd
Original Assignee
LG Innotek Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by LG Innotek Co Ltd filed Critical LG Innotek Co Ltd
Publication of DE202008018199U1 publication Critical patent/DE202008018199U1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/855—Optical field-shaping means, e.g. lenses
    • H10H20/856—Reflecting means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/814—Bodies having reflecting means, e.g. semiconductor Bragg reflectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H10H20/82—Roughened surfaces, e.g. at the interface between epitaxial layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/018—Bonding of wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H10H20/8316—Multi-layer electrodes comprising at least one discontinuous layer

Landscapes

  • Led Devices (AREA)
DE202008018199U 2007-11-26 2008-11-25 Lichtemittierende Halbleitervorrichtung Expired - Lifetime DE202008018199U1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR10-2007-0120649 2007-11-26
KR1020070120649A KR101449005B1 (ko) 2007-11-26 2007-11-26 반도체 발광소자 및 그 제조방법

Publications (1)

Publication Number Publication Date
DE202008018199U1 true DE202008018199U1 (de) 2012-02-23

Family

ID=40679124

Family Applications (1)

Application Number Title Priority Date Filing Date
DE202008018199U Expired - Lifetime DE202008018199U1 (de) 2007-11-26 2008-11-25 Lichtemittierende Halbleitervorrichtung

Country Status (7)

Country Link
US (4) US8253156B2 (enExample)
EP (2) EP2201618B1 (enExample)
JP (2) JP5550078B2 (enExample)
KR (1) KR101449005B1 (enExample)
CN (2) CN102751405B (enExample)
DE (1) DE202008018199U1 (enExample)
WO (1) WO2009069929A2 (enExample)

Families Citing this family (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101449005B1 (ko) * 2007-11-26 2014-10-08 엘지이노텍 주식회사 반도체 발광소자 및 그 제조방법
KR101550922B1 (ko) * 2009-03-10 2015-09-07 엘지이노텍 주식회사 발광 소자
JP2011029574A (ja) * 2009-03-31 2011-02-10 Toyoda Gosei Co Ltd Ｉｉｉ族窒化物系化合物半導体素子の製造方法
JP2011009524A (ja) * 2009-06-26 2011-01-13 Hitachi Cable Ltd 発光素子及び発光素子の製造方法
KR101072034B1 (ko) 2009-10-15 2011-10-10 엘지이노텍 주식회사 반도체 발광소자 및 그 제조방법
KR101014013B1 (ko) 2009-10-15 2011-02-10 엘지이노텍 주식회사 반도체 발광소자 및 그 제조방법
KR101081193B1 (ko) 2009-10-15 2011-11-07 엘지이노텍 주식회사 반도체 발광소자 및 그 제조방법
KR101114047B1 (ko) 2009-10-22 2012-03-09 엘지이노텍 주식회사 발광소자 및 그 제조방법
KR101039896B1 (ko) 2009-12-03 2011-06-09 엘지이노텍 주식회사 발광소자 및 그 제조방법
EP2942823B1 (en) * 2009-12-09 2021-05-05 LG Innotek Co., Ltd. Light emitting device, light emitting package, and lighting system
KR101028314B1 (ko) * 2010-01-29 2011-04-12 엘지이노텍 주식회사 발광 소자 및 그 제조방법
KR101064020B1 (ko) 2010-04-23 2011-09-08 엘지이노텍 주식회사 발광 소자 및 그 제조방법
TW201248915A (en) * 2011-05-31 2012-12-01 Aceplux Optotech Inc Light-emitting diode of high light-extraction efficiency and its preparation method
KR101877396B1 (ko) * 2011-09-07 2018-08-09 엘지이노텍 주식회사 발광소자
US8957440B2 (en) * 2011-10-04 2015-02-17 Cree, Inc. Light emitting devices with low packaging factor
US9847372B2 (en) * 2011-12-01 2017-12-19 Micron Technology, Inc. Solid state transducer devices with separately controlled regions, and associated systems and methods
KR102083837B1 (ko) * 2011-12-12 2020-03-03 센서 일렉트로닉 테크놀로지, 인크 자외선 반사성 접촉부
US9818912B2 (en) 2011-12-12 2017-11-14 Sensor Electronic Technology, Inc. Ultraviolet reflective contact
CN104103722B (zh) 2013-04-15 2017-03-01 展晶科技(深圳)有限公司 发光二极管晶粒及其制造方法
JP6110217B2 (ja) * 2013-06-10 2017-04-05 ソニーセミコンダクタソリューションズ株式会社 発光素子の製造方法
CN103346227B (zh) * 2013-07-03 2016-04-06 河北工业大学 一种氮化镓基发光二极管芯片及其制备方法
CN104218134B (zh) * 2014-09-15 2017-02-15 映瑞光电科技(上海)有限公司 一种具有特殊粗化形貌的led垂直芯片结构及其制备方法
US9472719B2 (en) * 2015-02-18 2016-10-18 Epistar Corporation Light-emitting diode
KR20170108321A (ko) 2016-03-17 2017-09-27 주식회사 루멘스 발광 다이오드
CN108767081B (zh) * 2018-03-06 2020-01-24 天津三安光电有限公司 倒装发光二极管及其制作方法
KR102346212B1 (ko) * 2018-12-31 2022-01-03 주식회사 나노엑스 양면 발광 led 칩
JP7352941B2 (ja) * 2019-08-28 2023-09-29 学校法人 名城大学 窒化物半導体多層膜反射鏡の製造方法

Family Cites Families (48)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2809692B2 (ja) 1989-04-28 1998-10-15 株式会社東芝 半導体発光素子およびその製造方法
DE69025273T2 (de) 1989-11-22 1996-07-11 Daido Steel Co Ltd Lichtemittierende Diode mit lichtreflektierender Schicht
EP1313153A3 (en) 1992-07-23 2005-05-04 Toyoda Gosei Co., Ltd. Light-emitting device of gallium nitride compound semiconductor
JP3312049B2 (ja) * 1993-03-12 2002-08-05 シャープ株式会社 半導体発光装置
JP3316062B2 (ja) * 1993-12-09 2002-08-19 株式会社東芝 半導体発光素子
DE19629920B4 (de) * 1995-08-10 2006-02-02 LumiLeds Lighting, U.S., LLC, San Jose Licht-emittierende Diode mit einem nicht-absorbierenden verteilten Braggreflektor
US5874747A (en) * 1996-02-05 1999-02-23 Advanced Technology Materials, Inc. High brightness electroluminescent device emitting in the green to ultraviolet spectrum and method of making the same
US6320206B1 (en) 1999-02-05 2001-11-20 Lumileds Lighting, U.S., Llc Light emitting devices having wafer bonded aluminum gallium indium nitride structures and mirror stacks
US6531719B2 (en) * 1999-09-29 2003-03-11 Toyoda Gosei Co., Ltd. Group III nitride compound semiconductor device
JP2002111057A (ja) 2000-09-29 2002-04-12 Toyoda Gosei Co Ltd Ｉｉｉ族窒化物系化合物半導体発光素子
US7180100B2 (en) * 2001-03-27 2007-02-20 Ricoh Company, Ltd. Semiconductor light-emitting device, surface-emission laser diode, and production apparatus thereof, production method, optical module and optical telecommunication system
KR20020081947A (ko) 2001-04-20 2002-10-30 주식회사 옵토웨이퍼테크 다중반사막을 포함한 발광소자 및 그 제조방법
TW564584B (en) 2001-06-25 2003-12-01 Toshiba Corp Semiconductor light emitting device
US6784462B2 (en) 2001-12-13 2004-08-31 Rensselaer Polytechnic Institute Light-emitting diode with planar omni-directional reflector
US20040104395A1 (en) * 2002-11-28 2004-06-03 Shin-Etsu Handotai Co., Ltd. Light-emitting device, method of fabricating the same, and OHMIC electrode structure for semiconductor device
JP2005142532A (ja) * 2003-10-14 2005-06-02 Matsushita Electric Ind Co Ltd 窒化物半導体素子の製造方法
JP4604488B2 (ja) * 2003-12-26 2011-01-05 日亜化学工業株式会社 窒化物半導体発光素子およびその製造方法
WO2005104780A2 (en) * 2004-04-28 2005-11-10 Verticle, Inc Vertical structure semiconductor devices
KR100576870B1 (ko) 2004-08-11 2006-05-10 삼성전기주식회사 질화물 반도체 발광소자 및 제조방법
US20060124956A1 (en) * 2004-12-13 2006-06-15 Hui Peng Quasi group III-nitride substrates and methods of mass production of the same
US7432119B2 (en) * 2005-01-11 2008-10-07 Semileds Corporation Light emitting diode with conducting metal substrate
CN100466310C (zh) * 2005-02-25 2009-03-04 日立电线株式会社 发光二极管及其制造方法
JP2006253298A (ja) * 2005-03-09 2006-09-21 Toshiba Corp 半導体発光素子及び半導体発光装置
US7483466B2 (en) * 2005-04-28 2009-01-27 Canon Kabushiki Kaisha Vertical cavity surface emitting laser device
WO2006131316A1 (en) * 2005-06-08 2006-12-14 Firecomms Limited Surface emitting optical devices
US7736945B2 (en) * 2005-06-09 2010-06-15 Philips Lumileds Lighting Company, Llc LED assembly having maximum metal support for laser lift-off of growth substrate
TWI269467B (en) 2005-07-01 2006-12-21 Epitech Technology Corp Light-emitting diode
DE102006004591A1 (de) 2005-09-29 2007-04-05 Osram Opto Semiconductors Gmbh Strahlungsemittierender Halbleiterchip
KR100721147B1 (ko) 2005-11-23 2007-05-22 삼성전기주식회사 수직구조 질화갈륨계 발광다이오드 소자
JP2007157853A (ja) 2005-12-01 2007-06-21 Sony Corp 半導体発光素子およびその製造方法
JP4655920B2 (ja) * 2005-12-22 2011-03-23 日立電線株式会社 半導体発光素子
JP5189734B2 (ja) 2006-01-24 2013-04-24 ローム株式会社 窒化物半導体発光素子
JP4049186B2 (ja) * 2006-01-26 2008-02-20 ソニー株式会社 光源装置
JP2007207981A (ja) * 2006-02-01 2007-08-16 Rohm Co Ltd 窒化物半導体発光素子の製造方法
CN101395728B (zh) 2006-03-10 2011-04-13 松下电工株式会社 发光元件及其制造方法
JP5048960B2 (ja) * 2006-03-20 2012-10-17 パナソニック株式会社 半導体発光素子
KR100778820B1 (ko) * 2006-04-25 2007-11-22 포항공과대학교 산학협력단 금속 전극 형성 방법 및 반도체 발광 소자의 제조 방법 및질화물계 화합물 반도체 발광 소자
JP5306589B2 (ja) * 2006-11-17 2013-10-02 シャープ株式会社 半導体発光素子及びその製造方法
JP2008182110A (ja) * 2007-01-25 2008-08-07 Matsushita Electric Ind Co Ltd 窒化物半導体発光装置
KR100770681B1 (ko) 2007-01-30 2007-10-29 삼성전기주식회사 수직구조 질화갈륨계 발광다이오드 소자 및 그 제조방법
US20080197369A1 (en) * 2007-02-20 2008-08-21 Cree, Inc. Double flip semiconductor device and method for fabrication
CN101315959A (zh) * 2007-06-01 2008-12-03 富士迈半导体精密工业（上海）有限公司 高亮度发光二极管
US20100200881A1 (en) * 2007-06-28 2010-08-12 Kyocera Corporation Light Emitting Element and Illumination Device
US20090001404A1 (en) * 2007-06-29 2009-01-01 Ohata Takafumi Semiconductor light emitting device, process for producing the same, and led illuminating apparatus using the same
JP2009081374A (ja) * 2007-09-27 2009-04-16 Rohm Co Ltd 半導体発光素子
KR101449005B1 (ko) * 2007-11-26 2014-10-08 엘지이노텍 주식회사 반도체 발광소자 및 그 제조방법
KR100992776B1 (ko) * 2008-11-14 2010-11-05 엘지이노텍 주식회사 반도체 발광소자 및 그 제조방법
KR100992772B1 (ko) * 2008-11-20 2010-11-05 엘지이노텍 주식회사 반도체 발광소자 및 그 제조방법

Also Published As

Publication number Publication date
US8969902B2 (en) 2015-03-03
JP2014096603A (ja) 2014-05-22
US20120286316A1 (en) 2012-11-15
CN102751405B (zh) 2016-04-13
US20150129920A1 (en) 2015-05-14
CN101874308B (zh) 2012-09-05
WO2009069929A3 (en) 2009-09-03
KR20090054008A (ko) 2009-05-29
EP2201618A4 (en) 2011-03-30
JP5550078B2 (ja) 2014-07-16
EP2485280A3 (en) 2013-01-16
EP2485280B1 (en) 2015-09-23
US9472739B2 (en) 2016-10-18
US8618571B2 (en) 2013-12-31
CN101874308A (zh) 2010-10-27
KR101449005B1 (ko) 2014-10-08
EP2201618B1 (en) 2014-06-18
US8253156B2 (en) 2012-08-28
US20130292732A1 (en) 2013-11-07
EP2485280A2 (en) 2012-08-08
US20100264440A1 (en) 2010-10-21
EP2201618A2 (en) 2010-06-30
WO2009069929A2 (en) 2009-06-04
CN102751405A (zh) 2012-10-24
JP2011504660A (ja) 2011-02-10

Similar Documents

Publication Publication Date Title
DE202008018199U1 (de) Lichtemittierende Halbleitervorrichtung
EP2130235B1 (de) Leuchtdiodenchip mit metallischer spiegelschicht, durchkontaktierung, tunnelkontakt und ladungsträgerreservoir
EP2193555B1 (de) Optoelektronischer halbleiterkörper
DE102019121014A1 (de) Lichtemittierender diodenchip vom flip-chip-typ
DE202012013620U1 (de) Leuchtdiode
DE112011103186T5 (de) Lichtemittierende Diodeneinheit auf Waferebene und Verfahren zu ihrer Herstellung
DE102012101718A1 (de) Optoelektronischer Halbleiterchip
DE202010017388U1 (de) Lichtemittierende Halbleitervorrichtung
DE112017003307T5 (de) Verfahren zur Herstellung einer optischen Halbleitervorrichtung und optische Halbleitervorrichtung
DE112015003673T5 (de) Vertikale LED-Chipstruktur und Verfahren zum Herstellen derselben
DE202009018552U1 (de) Lichtemittierende Halbleitervorrichtung
DE102014011893A1 (de) Leuchtdiode
DE112017003572T5 (de) Ultraviolette lichtemittierende diode
DE112013006419B4 (de) Verfahren zum Unterbringen von Zweidrahtbauelementen in einem Gehäuse, Verfahren zum Unterbringen von Zweidrahtleuchtdioden(LED)-Bauelementen in einem Gehäuse und Zweidraht(LED)-Gehäuseanordnung
DE112015004200T5 (de) Vertikale led-chipstruktur mit spezieller vergröbernder morphologie und herstellungsverfahren dafür
DE112014001352T5 (de) Lichtemitterdioden-Halbleiterstrukturen mit aktiven Gebieten, die InGaN enthalten
DE102011055715A1 (de) Leuchtdiode und Verfahren zum Herstellen derselben
DE102008035110A1 (de) Optoelektronischer Halbleiterchip
KR101749154B1 (ko) 발광 다이오드 칩 및 이의 제조방법
DE102018117018A1 (de) Optoelektronisches halbleiterbauelement mit einer silberhaltigen stromaufweitungsstruktur und optoelektronische vorrichtung
DE112020000415B4 (de) Optoelektronisches halbleiterbauelement und dessen herstellungsverfahren
WO2020038743A1 (de) Optoelektronisches halbleiterbauelement mit einer halbleiterkontaktschicht und verfahren zur herstellung des optoelektronischen halbleiterbauelements
WO2020064892A1 (de) Optoelektronisches halbleiterbauelement mit saphirträger und dessen herstellungsverfahren
DE102018118824A1 (de) Halbleiterbauelement mit einer stresskompensationsschicht und verfahren zur herstellung eines halbleiterbauelements
DE112005000851B4 (de) Verbindungshalbleiter-Lichtemissionsvorrichtung

Legal Events

Date Code Title Description
R207 Utility model specification

Effective date: 20120419

R150 Utility model maintained after payment of first maintenance fee after three years
R150 Utility model maintained after payment of first maintenance fee after three years

Effective date: 20120730

R151 Utility model maintained after payment of second maintenance fee after six years
R151 Utility model maintained after payment of second maintenance fee after six years

Effective date: 20141022

R152 Utility model maintained after payment of third maintenance fee after eight years
R071 Expiry of right