JP2015028984A - 半導体発光素子 - Google Patents
半導体発光素子 Download PDFInfo
- Publication number
- JP2015028984A JP2015028984A JP2013157541A JP2013157541A JP2015028984A JP 2015028984 A JP2015028984 A JP 2015028984A JP 2013157541 A JP2013157541 A JP 2013157541A JP 2013157541 A JP2013157541 A JP 2013157541A JP 2015028984 A JP2015028984 A JP 2015028984A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor structure
- light emitting
- semiconductor
- emitting element
- semiconductor light
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 93
- 238000000605 extraction Methods 0.000 claims abstract description 13
- 229910052751 metal Inorganic materials 0.000 claims description 15
- 239000002184 metal Substances 0.000 claims description 15
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 7
- 229910052719 titanium Inorganic materials 0.000 claims description 7
- 239000010936 titanium Substances 0.000 claims description 7
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 6
- 229910052703 rhodium Inorganic materials 0.000 claims description 5
- 239000010948 rhodium Substances 0.000 claims description 5
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 claims description 5
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 4
- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 4
- 229910052709 silver Inorganic materials 0.000 claims description 4
- 239000004332 silver Substances 0.000 claims description 4
- 229910052697 platinum Inorganic materials 0.000 claims description 3
- 239000010410 layer Substances 0.000 description 25
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 7
- 239000000463 material Substances 0.000 description 7
- 229910052814 silicon oxide Inorganic materials 0.000 description 7
- 230000000694 effects Effects 0.000 description 4
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 4
- 238000001039 wet etching Methods 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- 229910000484 niobium oxide Inorganic materials 0.000 description 3
- URLJKFSTXLNXLG-UHFFFAOYSA-N niobium(5+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Nb+5].[Nb+5] URLJKFSTXLNXLG-UHFFFAOYSA-N 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 229910001928 zirconium oxide Inorganic materials 0.000 description 2
- 229910002704 AlGaN Inorganic materials 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- PIICEJLVQHRZGT-UHFFFAOYSA-N Ethylenediamine Chemical compound NCCN PIICEJLVQHRZGT-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 1
- 230000012447 hatching Effects 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 229910052746 lanthanum Inorganic materials 0.000 description 1
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 239000010955 niobium Substances 0.000 description 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
- 229910052762 osmium Inorganic materials 0.000 description 1
- SYQBFIAQOQZEGI-UHFFFAOYSA-N osmium atom Chemical compound [Os] SYQBFIAQOQZEGI-UHFFFAOYSA-N 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
- H01L33/46—Reflective coating, e.g. dielectric Bragg reflector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/0004—Devices characterised by their operation
- H01L33/002—Devices characterised by their operation having heterojunctions or graded gap
- H01L33/0025—Devices characterised by their operation having heterojunctions or graded gap comprising only AIIIBV compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
- H01L33/22—Roughened surfaces, e.g. at the interface between epitaxial layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/85—Arrangements for extracting light from the devices
- H10K50/854—Arrangements for extracting light from the devices comprising scattering means
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Abstract
Description
図1に、本実施形態に係る半導体発光素子100の概略断面図を示す。図2は、半導体発光素子100を光取り出し面となる上面から見たときの概略平面図であり、図2のX−Xにおける概略断面図が図1に相当する。さらに、図3は、半導体発光素子100を下面から見たときの概略平面図である。なお、図3は、半導体構造10、正電極30及び負電極40の関係を説明するためのものであるので、反射膜20及びパッド電極50は図示していない。また、図3においては、複数の凸部が形成される領域をハッチングで示してある。
半導体構造10は、例えば、下方から上方に向かって(図1の下側から上側に向かって)順に、第1導電型(p型半導体)層、活性層、第2導電型(n型半導体)層を有する構造とすることができる。このとき、半導体構造10の上面すなわち第2導電型層の上面が光取出し面となる。半導体構造10は、例えば、複数のGaN系半導体(GaN、AlGaN、InGaNなど)を積層したものを用いることができ、発光色としては例えば青色又は緑色とすることができる。なお、図2に示すとおり、半導体発光素子100における半導体構造10の上面視における平面形状は凸部(凹部)が設けられた面(凸部若しくは凹部の基端又は凸部若しくは凹部の基端近傍を含む面)において長方形であるが、例えば正方形とすることもできる。
正電極30は、p型半導体層に形成されるものであり、例えば、酸化インジウムスズ、酸化亜鉛、酸化インジウム、酸化スズ、銀、チタン、ロジウム、アルミニウム、クロム等を用いることができ、好ましくは酸化インジウムスズを使用することができる。これらの材料を用いることにより、当接する部材と良好なオーミック接触が得られる。
反射膜20は、光を反射できるものであればよいが、例えば、半導体構造10の側面側から順に、絶縁膜21(第1絶縁膜21)と、金属膜22と、を含むことができる。反射膜20は、半導体構造10の側面へと向かう光を光取出し面側へと反射させるためのものであり、各側面の全域に設けている。また、光取出し効率を向上させるために、反射膜20を側面のみならず下面にも設けることができる。このとき、正電極30及び負電極40は、反射膜20に設けた開口部にて半導体構造20と接続される。本実施形態では、反射膜20として絶縁膜21と、金属膜22と、を順に設けているが、第1絶縁膜21のみを用いることもできるし、他の構成を採用するもできる。
パッド電極50は、例えば、亜鉛、ニッケル、白金、パラジウム、ロジウム、ルテニウム、オスミウム、イリジウム、チタン、ジルコニウム、ハフニウム、バナジウム、ニオブ、タンタル、コバルト、鉄、マンガン、モリブデン、クロム、タングステン、ランタン、銅、銀、金、イットリウムよりなる群から選択された少なくとも一種の元素を含む金属または合金またはそれらの酸化物が好ましい。具体的には、半導体構造側からチタン/ロジウム/金/チタンとできる。
図4に本実施形態に係る半導体発光素子200の概略断面図を示す。半導体発光素子200は、次に説明する事項以外は、第1実施形態において記載した事項と実質的に同一である。
10…半導体構造
20…反射膜
21…絶縁膜(第1絶縁膜)
22…金属膜
23…第2絶縁膜
30…正電極
40…負電極
50…パッド電極
Claims (6)
- 光取出し面を上面とする半導体構造と、
前記半導体構造の側面に設けられた反射膜と、
前記半導体構造の下面に設けられた正電極及び負電極と、を備え、
前記半導体構造の側面は、下面から上面に向かって広がるように傾斜しており、側面の少なくとも一領域において凸部又は凹部の少なくとも一方を複数有する、ことを特徴とする半導体発光素子。 - 前記半導体構造の上面は、少なくともその一領域において、凸部又は凹部の少なくとも一方を複数有する、ことを特徴とする請求項1に記載の半導体発光素子。
- 前記半導体構造の上面の面積に対して前記半導体構造の側面の面積が1.0倍〜2.0倍である、ことを特徴とする請求項1又は請求項2に記載の半導体発光素子。
- 前記反射膜は、前記半導体構造の側面側から順に、絶縁膜と、金属膜と、を含む、ことを特徴とする請求項1〜請求項3のいずれかに記載の半導体発光素子。
- 前記絶縁膜は、誘電体多層膜を含む、ことを特徴とする請求項4に記載の半導体発光素子。
- 前記金属膜は、チタン、アルミニウム、ロジウム、プラチナ、銀から選択された少なくとも一種の金属を含む、ことを特徴とする請求項4又は5に記載の半導体発光素子。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2013157541A JP2015028984A (ja) | 2013-07-30 | 2013-07-30 | 半導体発光素子 |
US14/447,194 US9236529B2 (en) | 2013-07-30 | 2014-07-30 | Semiconductor light emitting element having semiconductor structure with protrusions and/or recesses |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2013157541A JP2015028984A (ja) | 2013-07-30 | 2013-07-30 | 半導体発光素子 |
Publications (1)
Publication Number | Publication Date |
---|---|
JP2015028984A true JP2015028984A (ja) | 2015-02-12 |
Family
ID=52426843
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2013157541A Pending JP2015028984A (ja) | 2013-07-30 | 2013-07-30 | 半導体発光素子 |
Country Status (2)
Country | Link |
---|---|
US (1) | US9236529B2 (ja) |
JP (1) | JP2015028984A (ja) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106935689A (zh) * | 2015-12-31 | 2017-07-07 | 比亚迪股份有限公司 | 倒装芯片及其制备方法和照明设备 |
JP2018527748A (ja) * | 2015-08-03 | 2018-09-20 | ルミレッズ ホールディング ベーフェー | 反射性側面コーティングを伴う半導体発光デバイス |
CN110649142A (zh) * | 2015-12-31 | 2020-01-03 | 晶元光电股份有限公司 | 发光装置 |
US10535641B2 (en) | 2017-06-30 | 2020-01-14 | Nichia Corporation | Light emitting device and method of manufacturing same |
WO2021162153A1 (ko) * | 2020-02-13 | 2021-08-19 | 엘지전자 주식회사 | 반도체 발광 소자를 이용한 디스플레이 장치 및 이의 제조방법 |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102013110041B4 (de) * | 2013-09-12 | 2023-09-07 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Optoelektronischer Halbleiterchip und optoelektronisches Bauelement |
CN104465902B (zh) * | 2014-12-12 | 2017-02-22 | 天津三安光电有限公司 | 一种发光二极管结构的制备方法 |
CN106558639B (zh) * | 2015-09-24 | 2019-05-21 | 上海芯元基半导体科技有限公司 | 晶元级封装的led器件及其分割单元和制作方法 |
JP2018170333A (ja) * | 2017-03-29 | 2018-11-01 | 株式会社東芝 | 半導体装置及びその製造方法 |
CN108172673B (zh) * | 2018-01-31 | 2023-10-13 | 江苏新广联科技股份有限公司 | 用于led倒装芯片的分布式布拉格反射镜图形的制作方法和结构 |
CN109545937A (zh) * | 2018-12-29 | 2019-03-29 | 佛山市国星半导体技术有限公司 | 一种高亮度侧镀倒装led芯片及其制作方法 |
US20220093825A1 (en) * | 2020-09-24 | 2022-03-24 | Seoul Viosys Co., Ltd. | High efficiency light emitting device, unit pixel having the same, and displaying apparatus having the same |
US11870009B2 (en) * | 2021-08-06 | 2024-01-09 | Creeled, Inc. | Edge structures for light shaping in light-emitting diode chips |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2009164506A (ja) * | 2008-01-10 | 2009-07-23 | Rohm Co Ltd | 半導体発光素子 |
JP2009537982A (ja) * | 2006-05-19 | 2009-10-29 | ブリッジラックス インコーポレイテッド | Led用低光学損失電極構造体 |
JP2011134829A (ja) * | 2009-12-24 | 2011-07-07 | Nichia Corp | 発光装置 |
JP2012182276A (ja) * | 2011-03-01 | 2012-09-20 | Sony Corp | 発光ユニットおよび表示装置 |
JP2012227512A (ja) * | 2011-04-08 | 2012-11-15 | Nichia Chem Ind Ltd | 半導体発光素子 |
WO2013033152A1 (en) * | 2011-09-01 | 2013-03-07 | Bridgelux, Inc. | Distributed bragg reflector for reflecting light of multiple wavelengths from an led |
Family Cites Families (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE19632627A1 (de) * | 1996-08-13 | 1998-02-19 | Siemens Ag | Verfahren zum Herstellen eines Licht aussendenden und/oder empfangenden Halbleiterkörpers |
US6229160B1 (en) | 1997-06-03 | 2001-05-08 | Lumileds Lighting, U.S., Llc | Light extraction from a semiconductor light-emitting device via chip shaping |
JP3715627B2 (ja) * | 2002-01-29 | 2005-11-09 | 株式会社東芝 | 半導体発光素子及びその製造方法 |
JP4053926B2 (ja) | 2002-05-27 | 2008-02-27 | 日亜化学工業株式会社 | 窒化物半導体発光素子とそれを用いた発光装置 |
CN100595937C (zh) | 2002-08-01 | 2010-03-24 | 日亚化学工业株式会社 | 半导体发光元件及发光装置 |
JP4572604B2 (ja) | 2003-06-30 | 2010-11-04 | 日亜化学工業株式会社 | 半導体発光素子及びそれを用いた発光装置 |
JP4581540B2 (ja) | 2003-06-30 | 2010-11-17 | 日亜化学工業株式会社 | 半導体発光素子とそれを用いた発光装置 |
JP4148264B2 (ja) * | 2003-11-19 | 2008-09-10 | 日亜化学工業株式会社 | 半導体素子及びその製造方法 |
JP2006012916A (ja) | 2004-06-22 | 2006-01-12 | Toyoda Gosei Co Ltd | 発光素子 |
US20060204865A1 (en) * | 2005-03-08 | 2006-09-14 | Luminus Devices, Inc. | Patterned light-emitting devices |
JP2006253298A (ja) * | 2005-03-09 | 2006-09-21 | Toshiba Corp | 半導体発光素子及び半導体発光装置 |
JP2009004625A (ja) * | 2007-06-22 | 2009-01-08 | Sanken Electric Co Ltd | 半導体発光装置 |
TWI353657B (en) * | 2007-09-28 | 2011-12-01 | Ind Tech Res Inst | An island submount |
JP2009260316A (ja) * | 2008-03-26 | 2009-11-05 | Panasonic Electric Works Co Ltd | 半導体発光素子およびそれを用いる照明装置 |
WO2010056083A2 (ko) * | 2008-11-14 | 2010-05-20 | 삼성엘이디 주식회사 | 반도체 발광소자 |
KR101729263B1 (ko) | 2010-05-24 | 2017-04-21 | 엘지이노텍 주식회사 | 발광 소자, 발광 소자의 제조방법 및 발광 소자 패키지 |
US8343788B2 (en) * | 2011-04-19 | 2013-01-01 | Epistar Corporation | Light emitting device and manufacturing method thereof |
JP2013157523A (ja) * | 2012-01-31 | 2013-08-15 | Toyoda Gosei Co Ltd | 半導体発光素子、半導体発光素子の製造方法および発光装置 |
JP5953155B2 (ja) * | 2012-02-24 | 2016-07-20 | スタンレー電気株式会社 | 半導体発光装置 |
KR20130117474A (ko) * | 2012-04-18 | 2013-10-28 | 서울바이오시스 주식회사 | 배면에 패턴을 갖는 기판을 구비하는 발광다이오드 및 그의 제조방법 |
-
2013
- 2013-07-30 JP JP2013157541A patent/JP2015028984A/ja active Pending
-
2014
- 2014-07-30 US US14/447,194 patent/US9236529B2/en active Active
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2009537982A (ja) * | 2006-05-19 | 2009-10-29 | ブリッジラックス インコーポレイテッド | Led用低光学損失電極構造体 |
JP2009164506A (ja) * | 2008-01-10 | 2009-07-23 | Rohm Co Ltd | 半導体発光素子 |
JP2011134829A (ja) * | 2009-12-24 | 2011-07-07 | Nichia Corp | 発光装置 |
JP2012182276A (ja) * | 2011-03-01 | 2012-09-20 | Sony Corp | 発光ユニットおよび表示装置 |
JP2012227512A (ja) * | 2011-04-08 | 2012-11-15 | Nichia Chem Ind Ltd | 半導体発光素子 |
WO2013033152A1 (en) * | 2011-09-01 | 2013-03-07 | Bridgelux, Inc. | Distributed bragg reflector for reflecting light of multiple wavelengths from an led |
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2018527748A (ja) * | 2015-08-03 | 2018-09-20 | ルミレッズ ホールディング ベーフェー | 反射性側面コーティングを伴う半導体発光デバイス |
KR20210031006A (ko) * | 2015-08-03 | 2021-03-19 | 루미리즈 홀딩 비.브이. | 반사성 측면 코팅을 가지는 반도체 발광 디바이스 |
KR102641716B1 (ko) * | 2015-08-03 | 2024-02-29 | 루미리즈 홀딩 비.브이. | 반사성 측면 코팅을 가지는 반도체 발광 디바이스 |
CN106935689A (zh) * | 2015-12-31 | 2017-07-07 | 比亚迪股份有限公司 | 倒装芯片及其制备方法和照明设备 |
CN110649142A (zh) * | 2015-12-31 | 2020-01-03 | 晶元光电股份有限公司 | 发光装置 |
CN110649142B (zh) * | 2015-12-31 | 2024-01-16 | 晶元光电股份有限公司 | 发光装置 |
US10535641B2 (en) | 2017-06-30 | 2020-01-14 | Nichia Corporation | Light emitting device and method of manufacturing same |
US10950590B2 (en) | 2017-06-30 | 2021-03-16 | Nichia Corporation | Light emitting device |
WO2021162153A1 (ko) * | 2020-02-13 | 2021-08-19 | 엘지전자 주식회사 | 반도체 발광 소자를 이용한 디스플레이 장치 및 이의 제조방법 |
Also Published As
Publication number | Publication date |
---|---|
US9236529B2 (en) | 2016-01-12 |
US20150034963A1 (en) | 2015-02-05 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP2015028984A (ja) | 半導体発光素子 | |
JP6288912B2 (ja) | 発光素子 | |
JP6287317B2 (ja) | 半導体発光素子 | |
CN101399307B (zh) | 倒装芯片型发光元件 | |
JP5550078B2 (ja) | 半導体発光素子 | |
KR20090103955A (ko) | 금속 반사층,관통 접촉,터널 접촉 및 전하 캐리어 접촉을 가진 발광 다이오드칩 | |
JP3175334U7 (ja) | ||
JP3175270U7 (ja) | ||
JP2017520925A (ja) | 発光素子 | |
JP6191441B2 (ja) | 発光素子 | |
TW201707233A (zh) | 半導體發光結構 | |
KR20100059174A (ko) | 발광 소자 | |
JPWO2013051326A1 (ja) | 窒化物半導体発光素子、及び窒化物半導体発光素子の製造方法 | |
JP6011244B2 (ja) | 半導体発光素子 | |
US11393967B2 (en) | Eutectic electrode structure of flip-chip LED chip and flip-chip LED chip | |
TW201521226A (zh) | 發光裝置 | |
JP2014022401A (ja) | 窒化物半導体発光素子 | |
US20130248907A1 (en) | Semiconductor light-emitting device and manufacturing method of the same | |
KR20100084490A (ko) | 발광다이오드 | |
KR100675202B1 (ko) | 수직구조 질화갈륨계 발광 다이오드 소자 및 그 제조방법 | |
KR20130071834A (ko) | 반도체 발광소자 | |
CN106972089B (zh) | 一种稻草人形n电极及垂直结构led芯片 | |
CN112750931B (zh) | 微发光二极管、微发光二极管阵列基板及其制作方法 | |
KR101289602B1 (ko) | 발광 다이오드 | |
JP6189525B2 (ja) | 窒化物半導体発光素子 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20160509 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20161214 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20170110 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20170303 |
|
A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20170516 |