CN104465902B - 一种发光二极管结构的制备方法 - Google Patents
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Abstract
本发明提供一种发光二极管结构的制备方法，包括：提供一衬底，在所述衬底上依次生长低温AlxGa1‑xN（0≤x≤1）缓冲层，设定生长压力从高压向低压渐变、温度从低温向高温渐变、转速从低转速向高转速渐变使多量子阱层之前的氮化镓体结构层实现从三维生长向二维生长模式渐变，其中在靠近多量子阱层部分掺Si，形成非掺渐变氮化镓层和N型渐变氮化镓层，接着生长多量子阱层、AlxGa1‑xN（0≤x≤1）电子阻挡层、P型层，在随后的芯片制作过程中，将已经蚀刻出N型平台的外延片正划成芯粒，浸入化学溶液进行湿法蚀刻，在多量子阱底层形成具有粗糙侧壁的倒金字塔结构，提高出光效率。
Description
技术领域
本发明涉及氮化镓半导体器件外延领域，尤其涉及一种发光二极管结构的制备方法。
背景技术
发光二极管（英文为LED）是一种半导体固体发光器件，其利用半导体PN结作为发光结构，目前氮化镓被视为第三代半导体材料，由于氮化镓材料与空气的折射率差别较大，使发光二极管的出光效率受到了很大程度限制，光线从半导体层射向空气时，有很大一部分光线因出光角度问题被全反射回来，在半导体内部穿过，损失一部分能量，而损失的能量最终转换为热量，给发光二极管散热增加负担。
目前表面粗化技术成为提高发光二极管光取出效率的关键技术，但表面粗化技术普遍复杂，成本较高；且当前粗化技术普遍集中在芯粒表面，普通侧面粗化技术所有提及但由于侧面出光面积较小，对增加出光效率贡献有限。
发明内容
针对上述问题，本发明提供一种发光二极管结构的制备方法，主要技术方案如下：
1）在氢气或氢气、氮气、氨气三种气体混合气氛下，对衬底进行热处理。
2）在热处理后衬底上，依次生长低温AlxGa1-xN（0≤x≤1）缓冲层、非掺渐变氮化镓层、N型渐变氮化镓层、多量子阱层、AlxGa1-xN（0≤x≤1）电子阻挡层以及P型层。
其中在缓冲层生长结束后，设定生长压力从高压向低压渐变、温度从低温向高温渐变、转速从低转速向高转速渐变，使氮化镓体结构层实现从三维生长向二维生长模式渐变并在靠近多量子阱层位置掺Si，形成生长模式渐变的非掺渐变氮化镓层和N型渐变氮化镓层，在随后的芯片制作过程中，将已经蚀刻出N型平台的外延片正划成芯粒，浸入化学溶液进行湿法蚀刻，在多量子阱底层形成具有粗糙侧壁的倒金字塔结构，从而提高出光效率。
进一步地，在氮化镓体结构层由下至上生长过程中，反应室压力从高压渐变成低压，优选从500 torr渐变至100 torr；温度从低温渐变至高温，优选从700 ℃渐变至1150℃；转速从低转速渐变至高转速，优选从600 转/分渐变至1200 转/分。
进一步地，在氮化镓体结构层由下至上生长过程中，压力、转速、温度同时或仅其中一个或两个条件呈现线性渐变或非线性渐变。
进一步地，在氮化镓体结构层由下至上生长过程中，在靠近多量子阱层处掺Si形成N型渐变氮化镓层，其中非掺渐变氮化镓层厚度为a、N型渐变氮化镓层厚度为b，从三维生长模式向二维生长模式渐变氮化镓层生长总厚度为c，则0≤a＜c，0＜b≤c，且a+b=c。
进一步地，在氮化镓体结构层由下至上生长过程中，在从三维生长模式向二维生长模式渐变生长过程中，根据产品需求，部分氮化镓层采用 AlxGa1-xN（0≤x≤1），或AlxInyGa1-x-yN（0≤x≤1，0≤y≤1）替代。
进一步地，在芯片制作过程中，氮化镓体结构层侧面为倾斜面，且侧面倾斜角度且倾斜角度介于0°~ 80°之间，优选30°。
进一步地，所述外延生长方式扩展至多量子阱层或/和P型层。
进一步地，将已形成倒金字塔结构的芯片分别制作N电极、P电极，并覆盖钝化保护层，对芯片进行减薄、裂片、测试和分选。
本发明提供的发光二极管结构的制备方法，其优点在于：在氮化镓体结构层由下至上生长过程中，设定生长压力从高压向低压渐变、温度从低温向高温渐变、转速从低转速向高转速渐变，通过改变衬底表面临界层厚度及横向、纵向生长速率，使多量子阱层之前的氮化镓体结构层实现从三维生长向二维生长模式渐变，其中在靠近多量子阱层部分掺Si，形成非掺渐变氮化镓层和N型渐变氮化镓层，在随后的芯片制作过程中，将已经蚀刻出N型平台的外延片正划成芯粒，浸入化学溶液进行湿法蚀刻，在氮化镓体结构层处形成具有粗糙侧壁的倒金字塔结构，从而大大提高出光效率。
本发明利用外延层生长模式变更，在同芯片工艺条件下形成了具备粗糙侧壁的倒装金字塔结构，不需增加外延与芯片制作步骤与其他设备，但出光效率大大提升，具有较强的可操作性和较高的商业价值。
附图说明
图1本发明实施例1制作的发光二极管外延片结构示意图。
图2本发明实施例1制作的发光二极管芯片结构示意图。
图3本发明实施例2制作的发光二极管芯片结构示意图。
图中标示：
1：衬底；2：低温AlxGa1-xN（0≤x≤1）缓冲层；3：渐变氮化镓层，其中3-1为非掺渐变氮化镓层，3-2为N型渐变氮化镓层；4：多量子阱层；5：AlxGa1-xN电子阻挡层；6：P型层；7：P电极；8：N电极。
具体实施方式
为使本发明更易于理解其实质性特点及其所具的实用性，下面便结合附图对本发明若干具体实施例作进一步的详细说明，但需要说明的是以下关于实施例的描述及说明对本发明保护范围不构成任何限制。
实施例1
图1为本发明制作的一种发光二极管外延片结构的示意图，本实施例中制备工艺由下至上依次包括：（1）蓝宝石衬底1；（2）生长低温AlxGa1-xN缓冲层2，材料为氮化镓、氮化铝、或铝镓氮结合，膜厚在10~100nm之间；（3）生长渐变氮化镓体结构层3，设定初始生长压力600 torr、生长温度700 ℃、转速600 转/分，（4）随后生长压力、温度、转速同时线性渐变至100 torr、1150 ℃、1200 转/分，生长厚度控制在2000~10000nm之间，优选5000nm；（5）在渐变氮化镓体结构层生长过程中，靠近多量子阱层部分掺Si形成N型渐变氮化镓层3-2，区别于非掺渐变氮化镓层为3-1，Si掺杂浓度在5×1018~5×1019cm-3之间，其中优选1.4×1019cm-3，设定非掺渐变氮化镓层厚度为a、N型渐变氮化镓层厚度为b，则从三维生长模式向二维生长模式渐变氮化镓层生长总厚度为c=a+b；（6）生长多量子阱层4，以InGaN作为阱层、以GaN或AlGaN或二者组合作为垒层，其中垒层厚度在50~150nm之间、阱层厚度在1~20nm之间，生长多个循环结构组成有源区；（7）AlxGa1-xN电子阻挡层5，膜厚在0.1~200nm之间；（8）P型层6，可以为P型GaN层或P型InyGa1-yN层，优选P型GaN，膜厚在20~2000nm之间，优选200nm。
图2为本发明制作一种发光二极管芯片结构的示意图，本实施例中在具备图1所述结构外延片基础上：（1）通过光刻流程、干法蚀刻流程形成N电极平台；（2）在外延片表面淀积一钝化保护层；（3）通过激光划片工艺形成芯粒，其中划片深度至少贯穿整个外延层达到衬底层；（4）将经过激光正划后的外延片放入酸性化学蚀刻液中进行湿法蚀刻；（5）去掉钝化保护层，制作透明导电层、N电极、P电极；（6）对芯片进行减薄、裂片、测试和分选。
作为本发明的一个具体实施例，本发明利用在氮化镓体结构层由下至上生长过程中，设定反应室压力从高压600 torr渐变至低压100 torr、低温700 ℃渐变至高温1150℃、低转速600 转/分渐变至高转速1200 转/分，衬底表面临界层厚度及横向、纵向生长速率变化使氮化镓体结构层形成了从三维生长向二维生长模式的渐变。在随后的芯片制作过程中，将已经蚀刻出N型平台的外延片正划成芯粒，浸入酸性化学溶液进行湿法蚀刻，在氮化镓体结构层位置形成具有粗糙侧壁的倒金字塔结构。如此，制得的氮化镓体结构层侧面为倾斜面，且侧面倾斜角度且倾斜角度介于0°~80°之间，优选30°。本发明仅利用外延层生长模式变更，不需增加外延与芯片制作步骤与其他设备，但出光效率大大提升，具有较强的可操作性和较高的商业价值。
实施例2
如图3所示，区别于实施例1，本实施例在P型层生长过程中，设定生长压力从低压渐变至高压，优选100 torr渐变至300 torr；转速从高转速渐变至低转速，优选1200 转/分渐变至600 转/分；为避免对多量子阱层的破坏，温度保持恒定，优选900 ℃；P型层实现从二维生长模式渐变至三维生长模式，在蚀刻过程中，P型层形成具有粗糙侧壁的正金字塔结构，从而进一步增加出光面积，提升出光效率。
以上实施例仅用以说明而非限制本发明的技术方案。任何不脱离本发明精神和范围的技术方案，均应涵盖在本发明的专利申请范围当中。
Claims (10)
1.一种发光二极管结构的制备方法，包括以下步骤：
提供一衬底；
在所述衬底上依次生长低温AlxGa1-xN（0≤x≤1）缓冲层、非掺渐变氮化镓层、N型渐变氮化镓层、多量子阱层、AlxGa1-xN（0≤x≤1）电子阻挡层以及P型层；
其特征在于：在缓冲层生长结束后，设定生长压力从高压向低压渐变或/和温度从低温向高温渐变或/和转速从低转速向高转速渐变，通过改变衬底表面临界层厚度及横向、纵向生长速率，使多量子阱层之前的氮化镓体结构层实现从三维生长向二维生长模式渐变并在靠近多量子阱层位置掺Si，形成生长模式渐变的非掺渐变氮化镓层和N型渐变氮化镓层，在随后的芯片制作过程中将已经蚀刻出N型平台的外延片正划成芯粒，浸入化学溶液进行湿法蚀刻，在氮化镓体结构层处形成具有粗糙侧壁的倒金字塔结构，从而提高出光效率。
2.根据权利要求1所述的发光二极管结构的制备方法，其特征在于：在氮化镓体结构层由下至上生长过程中，反应室压力从高压渐变成低压，从600 torr渐变至100 torr；温度从低温渐变至高温，从700 ℃渐变至1150 ℃；转速从低转速渐变至高转速，从600 转/分渐变至1200转/分。
3.根据权利要求1所述的发光二极管结构的制备方法，其特征在于：在氮化镓体结构层由下至上生长过程中，其中压力、转速、温度同时呈现线性或非线性变化，即在渐变的压力、转速、温度条件下生长氮化镓体结构层。
4.根据权利要求1所述的发光二极管结构的制备方法，其特征在于：在氮化镓体结构层由下至上生长过程中，压力、转速、温度三个条件中仅一个或两个条件呈现线性变化，其它条件保持恒定。
5.根据权利要求1所述的发光二极管结构的制备方法，其特征在于：在氮化镓体结构层由下至上生长过程中，压力、转速、温度三个条件中仅一个或两个条件呈现非线性变化，其它条件保持恒定。
6.根据权利要求1所述的发光二极管结构的制备方法，其特征在于：在氮化镓体结构层由下至上生长过程中，在靠近多量子阱层处掺Si形成N型渐变氮化镓层，其中非掺渐变氮化镓层厚度为a、N型渐变氮化镓层厚度为b，从三维生长模式向二维生长模式渐变氮化镓层生长总厚度为c，则0≤a＜c，0＜b≤c，且a+b=c。
7.根据权利要求1所述的发光二极管结构的制备方法，其特征在于：氮化镓体结构层由下至上生长过程中，部分氮化镓层采用 AlxGa1-xN（0≤x≤1），或AlxInyGa1-x-yN（0≤x≤1，0≤y≤1）替代。
8.根据权利要求1所述的发光二极管结构的制备方法，其特征在于：在芯片制作过程中采用蚀刻方式对外延层侧壁进行蚀刻，形成边缘粗糙的倒金字塔结构。
9.根据权利要求1所述的发光二极管结构的制备方法，其特征在于：所述湿法蚀刻后氮化镓体结构层侧面为粗糙的倾斜面，且倾斜角度介于0°~ 80°之间。
10.根据权利要求1所述的发光二极管结构的制备方法，其特征在于：所述外延生长方式扩展至多量子阱层或/和P型层。
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