KR101459764B1 - 질화물계 발광 소자 - Google Patents

질화물계 발광 소자 Download PDF

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Publication number
KR101459764B1
KR101459764B1 KR1020080006073A KR20080006073A KR101459764B1 KR 101459764 B1 KR101459764 B1 KR 101459764B1 KR 1020080006073 A KR1020080006073 A KR 1020080006073A KR 20080006073 A KR20080006073 A KR 20080006073A KR 101459764 B1 KR101459764 B1 KR 101459764B1
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KR
South Korea
Prior art keywords
layer
light emitting
light
emitting device
photonic crystal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1020080006073A
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English (en)
Korean (ko)
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KR20090080218A (ko
Inventor
김선경
Original Assignee
엘지이노텍 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to KR1020080006073A priority Critical patent/KR101459764B1/ko
Application filed by 엘지이노텍 주식회사 filed Critical 엘지이노텍 주식회사
Priority to CN200980102755XA priority patent/CN101926011B/zh
Priority to JP2010544223A priority patent/JP5888854B2/ja
Priority to EP09704913.4A priority patent/EP2237332B1/en
Priority to US12/514,615 priority patent/US8174040B2/en
Priority to PCT/KR2009/000318 priority patent/WO2009093845A2/ko
Publication of KR20090080218A publication Critical patent/KR20090080218A/ko
Priority to US13/449,097 priority patent/US20120199864A1/en
Application granted granted Critical
Publication of KR101459764B1 publication Critical patent/KR101459764B1/ko
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/832—Electrodes characterised by their material
    • H10H20/835—Reflective materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/832—Electrodes characterised by their material
    • H10H20/833—Transparent materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/018—Bonding of wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
    • H10H20/841—Reflective coatings, e.g. dielectric Bragg reflectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/872—Periodic patterns for optical field-shaping, e.g. photonic bandgap structures

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  • Led Devices (AREA)
  • Electroluminescent Light Sources (AREA)
KR1020080006073A 2008-01-21 2008-01-21 질화물계 발광 소자 Expired - Fee Related KR101459764B1 (ko)

Priority Applications (7)

Application Number Priority Date Filing Date Title
KR1020080006073A KR101459764B1 (ko) 2008-01-21 2008-01-21 질화물계 발광 소자
JP2010544223A JP5888854B2 (ja) 2008-01-21 2009-01-21 発光素子
EP09704913.4A EP2237332B1 (en) 2008-01-21 2009-01-21 Light emitting device
US12/514,615 US8174040B2 (en) 2008-01-21 2009-01-21 Light emitting device
CN200980102755XA CN101926011B (zh) 2008-01-21 2009-01-21 发光器件
PCT/KR2009/000318 WO2009093845A2 (ko) 2008-01-21 2009-01-21 발광소자
US13/449,097 US20120199864A1 (en) 2008-01-21 2012-04-17 Light emitting device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020080006073A KR101459764B1 (ko) 2008-01-21 2008-01-21 질화물계 발광 소자

Publications (2)

Publication Number Publication Date
KR20090080218A KR20090080218A (ko) 2009-07-24
KR101459764B1 true KR101459764B1 (ko) 2014-11-12

Family

ID=40901544

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020080006073A Expired - Fee Related KR101459764B1 (ko) 2008-01-21 2008-01-21 질화물계 발광 소자

Country Status (6)

Country Link
US (2) US8174040B2 (enExample)
EP (1) EP2237332B1 (enExample)
JP (1) JP5888854B2 (enExample)
KR (1) KR101459764B1 (enExample)
CN (1) CN101926011B (enExample)
WO (1) WO2009093845A2 (enExample)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100736623B1 (ko) 2006-05-08 2007-07-09 엘지전자 주식회사 수직형 발광 소자 및 그 제조방법
KR101100681B1 (ko) * 2009-09-10 2012-01-03 주식회사 에피밸리 반도체 발광소자
KR101007077B1 (ko) 2009-11-06 2011-01-10 엘지이노텍 주식회사 발광소자, 발광소자 패키지 및 그 제조방법
KR101712094B1 (ko) 2009-11-27 2017-03-03 포항공과대학교 산학협력단 질화물갈륨계 수직 발광다이오드 및 그 제조 방법
KR100993094B1 (ko) 2010-02-01 2010-11-08 엘지이노텍 주식회사 발광소자 및 발광소자 패키지
US8084776B2 (en) 2010-02-25 2011-12-27 Lg Innotek Co., Ltd. Light emitting device, light emitting device package, and lighting system
KR101028220B1 (ko) * 2010-02-25 2011-04-11 엘지이노텍 주식회사 발광 소자, 발광 소자 제조방법 및 발광 소자 패키지
KR101028250B1 (ko) * 2010-02-25 2011-04-11 엘지이노텍 주식회사 발광 소자 및 이를 이용한 발광 소자 패키지
KR100999771B1 (ko) * 2010-02-25 2010-12-08 엘지이노텍 주식회사 발광 소자, 발광 소자 제조방법 및 발광 소자 패키지
KR101047720B1 (ko) * 2010-04-23 2011-07-08 엘지이노텍 주식회사 발광 소자, 발광 소자 제조방법 및 발광 소자 패키지
KR101701510B1 (ko) 2010-07-09 2017-02-01 엘지이노텍 주식회사 발광소자
JP2014103240A (ja) * 2012-11-20 2014-06-05 Stanley Electric Co Ltd 半導体発光素子
JP6190585B2 (ja) * 2012-12-12 2017-08-30 スタンレー電気株式会社 多重量子井戸半導体発光素子
EP2968684A1 (en) * 2013-03-15 2016-01-20 Abbott Cardiovascular Systems Inc. Crosslinked coatings delivered via a balloon
KR101521081B1 (ko) * 2013-10-01 2015-05-18 경희대학교 산학협력단 발광 다이오드 패키지
JP6826395B2 (ja) * 2016-08-26 2021-02-03 ローム株式会社 半導体発光素子
KR102555005B1 (ko) * 2016-11-24 2023-07-14 삼성전자주식회사 반도체 발광 소자 및 반도체 발광 소자의 제조 방법
WO2019146737A1 (ja) * 2018-01-26 2019-08-01 丸文株式会社 深紫外ｌｅｄ及びその製造方法
JP2022172792A (ja) * 2021-05-07 2022-11-17 日機装株式会社 窒化物半導体発光素子

Citations (2)

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KR20040075002A (ko) * 2001-12-13 2004-08-26 렌슬러 폴리테크닉 인스티튜트 평면형 전방향 반사기를 가진 광 방사 다이오드
JP2007305998A (ja) * 2006-05-08 2007-11-22 Lg Electronics Inc 発光素子及びその製造方法

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JPH0527177A (ja) * 1991-07-25 1993-02-05 Fuji Photo Film Co Ltd 走査型顕微鏡
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JP2004056010A (ja) * 2002-07-23 2004-02-19 Toyota Central Res & Dev Lab Inc 窒化物半導体発光素子
JP4350996B2 (ja) * 2002-11-26 2009-10-28 日東電工株式会社 有機エレクトロルミネッセンス素子、面光源および表示装置
TWI312582B (en) * 2003-07-24 2009-07-21 Epistar Corporatio Led device, flip-chip led package and light reflecting structure
JP4315760B2 (ja) 2003-07-31 2009-08-19 株式会社沖データ 半導体発光装置、ｌｅｄヘッド、画像形成装置、及び半導体発光装置の製造方法
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JP2007305998A (ja) * 2006-05-08 2007-11-22 Lg Electronics Inc 発光素子及びその製造方法

Also Published As

Publication number Publication date
KR20090080218A (ko) 2009-07-24
EP2237332A2 (en) 2010-10-06
US8174040B2 (en) 2012-05-08
EP2237332B1 (en) 2019-08-21
WO2009093845A3 (ko) 2009-10-22
WO2009093845A2 (ko) 2009-07-30
JP2011510512A (ja) 2011-03-31
CN101926011B (zh) 2013-01-23
CN101926011A (zh) 2010-12-22
EP2237332A4 (en) 2011-11-30
US20100314645A1 (en) 2010-12-16
JP5888854B2 (ja) 2016-03-22
US20120199864A1 (en) 2012-08-09

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