JP5385275B2 - 発光素子及びその製造方法 - Google Patents
発光素子及びその製造方法 Download PDFInfo
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- JP5385275B2 JP5385275B2 JP2010522799A JP2010522799A JP5385275B2 JP 5385275 B2 JP5385275 B2 JP 5385275B2 JP 2010522799 A JP2010522799 A JP 2010522799A JP 2010522799 A JP2010522799 A JP 2010522799A JP 5385275 B2 JP5385275 B2 JP 5385275B2
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- semiconductor layer
- light extraction
- conductive semiconductor
- light emitting
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/10—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0083—Periodic patterns for optical field-shaping in or on the semiconductor body or semiconductor body package, e.g. photonic bandgap structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
- H01L33/46—Reflective coating, e.g. dielectric Bragg reflector
Description
20 発光半導体層
21 第2導電型半導体層
22 活性層
23 第1導電型半導体層
24 非ドープGaN層
25、26、27、28 光抽出層
30 オーミック接触層
40 フォトニック結晶
41 単位パターン
50 第2電極層
51 オーミック接触層
52 反射層
53 導電性基板
60 第1電極層
110 第1電極層
120 第2電極層
Claims (17)
- 第2導電型半導体層と、
前記第2導電型半導体層の上に活性層と、
活性層の上に第1導電型半導体層と、
前記第1導電型半導体層の上に光抽出構造を含む非伝導性半導体層と、
前記第2導電型半導体層の下に配置された第2電極層と、
前記第1導電型半導体層の上に配置された第1電極層と、
を含み、
前記第1電極層は前記非伝導性半導体層及び第1導電型半導体層が選択的に除去された領域に形成され、
前記第2電極層は基板を含み、
前記光抽出構造はホール及び柱の形態を少なくとも一つ含み、前記ホールの深さまたは柱の高さは前記非伝導性半導体層の厚さよりも小さい発光素子。 - 前記非伝導性半導体層は500nm〜2000nmの厚さを有することを特徴とする請求項1に記載の発光素子。
- 前記光抽出構造は、前記非伝導性半導体層の屈折率より大きい屈折率を有する第1光抽出層を含むことを特徴とする請求項1または2に記載の発光素子。
- 前記光抽出構造のホールまたは柱は前記第1光抽出層に形成されることを特徴とする請求項3に記載の発光素子。
- 前記ホールの深さまたは柱の高さは450nm〜900nmであることを特徴とする請求項3または4に記載の発光素子。
- 前記光抽出構造は前記第1光抽出層上に配置され、
前記第1光抽出層上に前記第1光抽出層の屈折率より小さい屈折率を有する第2光抽出層を含むことを特徴とする請求項3〜5のいずれかに記載の発光素子。 - 前記第1光抽出層はTiO 2 またはSi 3 N 4 から形成され、前記第2光抽出層はSiO 2 から形成されることを特徴とする請求項6に記載の発光素子。
- 前記第2電極層は反射層を含み、前記基板は導電性基板であることを特徴とする請求項1〜7のいずれかに記載の発光素子。
- 前記第1導電型半導体層はn−型半導体層を含み、前記第2導電型半導体層はp−型半導体層を含むことを特徴とする請求項1〜8のいずれかに記載の発光素子。
- 前記第1光抽出構造のホールは複数個存在し、前記ホールの半径は0.325a〜0.40a(ここで、前記aは前記ホールのパターン周期である。)であることを特徴とする請求項1〜9のいずれかに記載の発光素子。
- 前記第1光抽出層は、前記非伝導性半導体層と異なる非伝導性材質を含むことを特徴とする請求項3〜7のいずれかに記載の発光素子。
- 前記活性層と前記第2電極層の間の距離は、前記活性層から放出された光の波長より短いことを特徴とする請求項1〜11のいずれかに記載の発光素子。
- 前記光抽出構造の単位パターンは四角格子形態、三角格子形態、アルキメデス格子形態、擬似ランダム形態、ランダム形態中の少なくともいずれか1つの形態に配置されたことを特徴とする請求項1〜12のいずれかに記載の発光素子。
- 前記光抽出構造は、前記光抽出層及び前記非伝導性半導体層を選択的にエッチングして形成されたことを特徴とする請求項3〜13のいずれかに記載の発光素子。
- 基板の上に非伝導性半導体層を形成する段階と、
前記非伝導性半導体層の上に第1導電型半導体層、活性層及び第2導電型半導体層を形成する段階と、
前記第2導電型半導体層の上に第2電極層を形成する段階と、
前記基板を除去する段階と、
前記非伝導性半導体層に光抽出構造を形成する段階と、
前記第1導電型半導体層の下に第1電極層を形成する段階と、
を含み、
前記第1電極層は前記非伝導性半導体層及び第1導電型半導体層が選択的に除去された領域に形成され、
前記第2電極層は、オーミック接触層、反射層、導電性基板中の少なくとも一つを含み、
前記非伝導性半導体層は500〜2000nmの厚さを有する発光素子の製造方法。 - 前記基板を除去した後、前記非伝導性半導体層に光抽出層を形成し、前記光抽出層に前記光抽出構造を形成する段階が含まれることを特徴とする請求項15に記載の発光素子の製造方法。
- 前記光抽出層は、前記非伝導性半導体層と異なる非伝導性材質を含むことを特徴とする請求項16に記載の発光素子の製造方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-2007-0087764 | 2007-08-30 | ||
KR1020070087764A KR100921466B1 (ko) | 2007-08-30 | 2007-08-30 | 질화물계 발광 소자 및 그 제조방법 |
PCT/KR2008/004997 WO2009028860A2 (en) | 2007-08-30 | 2008-08-26 | Light emitting device and method for fabricating the same |
Related Child Applications (1)
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JP2013207935A Division JP5816240B2 (ja) | 2007-08-30 | 2013-10-03 | 発光素子及びその製造方法 |
Publications (2)
Publication Number | Publication Date |
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JP2010538452A JP2010538452A (ja) | 2010-12-09 |
JP5385275B2 true JP5385275B2 (ja) | 2014-01-08 |
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JP2010522799A Active JP5385275B2 (ja) | 2007-08-30 | 2008-08-26 | 発光素子及びその製造方法 |
JP2013207935A Active JP5816240B2 (ja) | 2007-08-30 | 2013-10-03 | 発光素子及びその製造方法 |
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Country Status (6)
Country | Link |
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US (2) | US20110012150A1 (ja) |
EP (1) | EP2188850B1 (ja) |
JP (2) | JP5385275B2 (ja) |
KR (1) | KR100921466B1 (ja) |
CN (1) | CN101790801B (ja) |
WO (1) | WO2009028860A2 (ja) |
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-
2007
- 2007-08-30 KR KR1020070087764A patent/KR100921466B1/ko active IP Right Grant
-
2008
- 2008-08-26 CN CN200880104504.0A patent/CN101790801B/zh active Active
- 2008-08-26 EP EP08793501.1A patent/EP2188850B1/en active Active
- 2008-08-26 WO PCT/KR2008/004997 patent/WO2009028860A2/en active Application Filing
- 2008-08-26 JP JP2010522799A patent/JP5385275B2/ja active Active
- 2008-08-26 US US12/674,356 patent/US20110012150A1/en not_active Abandoned
-
2012
- 2012-05-09 US US13/467,882 patent/US9647173B2/en active Active
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2013
- 2013-10-03 JP JP2013207935A patent/JP5816240B2/ja active Active
Also Published As
Publication number | Publication date |
---|---|
US20120217509A1 (en) | 2012-08-30 |
CN101790801A (zh) | 2010-07-28 |
WO2009028860A3 (en) | 2009-09-11 |
WO2009028860A2 (en) | 2009-03-05 |
JP5816240B2 (ja) | 2015-11-18 |
KR20090022424A (ko) | 2009-03-04 |
US9647173B2 (en) | 2017-05-09 |
KR100921466B1 (ko) | 2009-10-13 |
EP2188850B1 (en) | 2018-10-31 |
JP2014017520A (ja) | 2014-01-30 |
EP2188850A2 (en) | 2010-05-26 |
CN101790801B (zh) | 2014-10-01 |
US20110012150A1 (en) | 2011-01-20 |
EP2188850A4 (en) | 2011-01-12 |
JP2010538452A (ja) | 2010-12-09 |
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