JP6426377B2 - 発光素子及び照明システム - Google Patents

発光素子及び照明システム Download PDF

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Publication number
JP6426377B2
JP6426377B2 JP2014123447A JP2014123447A JP6426377B2 JP 6426377 B2 JP6426377 B2 JP 6426377B2 JP 2014123447 A JP2014123447 A JP 2014123447A JP 2014123447 A JP2014123447 A JP 2014123447A JP 6426377 B2 JP6426377 B2 JP 6426377B2
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Japan
Prior art keywords
layer
concentration
conductivity type
light emitting
emitting device
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JP2014123447A
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English (en)
Japanese (ja)
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JP2015005745A5 (enExample
JP2015005745A (ja
Inventor
ホン・キヨン
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
LG Innotek Co Ltd
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LG Innotek Co Ltd
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Publication of JP2015005745A publication Critical patent/JP2015005745A/ja
Publication of JP2015005745A5 publication Critical patent/JP2015005745A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/814—Bodies having reflecting means, e.g. semiconductor Bragg reflectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/816—Bodies having carrier transport control structures, e.g. highly-doped semiconductor layers or current-blocking structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/8215—Bodies characterised by crystalline imperfections, e.g. dislocations; characterised by the distribution of dopants, e.g. delta-doping
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP

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  • Led Devices (AREA)
  • Non-Portable Lighting Devices Or Systems Thereof (AREA)
JP2014123447A 2013-06-18 2014-06-16 発光素子及び照明システム Active JP6426377B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR10-2013-0069663 2013-06-18
KR1020130069663A KR102101356B1 (ko) 2013-06-18 2013-06-18 발광소자 및 조명시스템

Publications (3)

Publication Number Publication Date
JP2015005745A JP2015005745A (ja) 2015-01-08
JP2015005745A5 JP2015005745A5 (enExample) 2017-08-03
JP6426377B2 true JP6426377B2 (ja) 2018-11-21

Family

ID=51210224

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2014123447A Active JP6426377B2 (ja) 2013-06-18 2014-06-16 発光素子及び照明システム

Country Status (5)

Country Link
US (1) US9147811B2 (enExample)
EP (1) EP2816615B1 (enExample)
JP (1) JP6426377B2 (enExample)
KR (1) KR102101356B1 (enExample)
CN (1) CN104241474B (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107394019B (zh) 2017-07-31 2019-07-12 安徽三安光电有限公司 一种半导体发光元件及其制备方法
US10978612B2 (en) 2017-07-31 2021-04-13 Xiamen San'an Optoelectronics Co., Ltd Semiconductor light emitting device
US11557693B2 (en) 2017-07-31 2023-01-17 Xiamen San'an Optoelectronics Co., Ltd. Semiconductor light emitting device
CN110379898B (zh) * 2019-05-22 2020-11-17 华灿光电(苏州）有限公司 发光二极管外延片及其生长方法
KR20240112402A (ko) * 2023-01-11 2024-07-19 삼성디스플레이 주식회사 표시 장치 및 이의 제조 방법

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3164478B2 (ja) * 1994-08-31 2001-05-08 京セラ株式会社 半導体装置およびその製造方法
JP3122324B2 (ja) * 1995-02-20 2001-01-09 三菱電線工業株式会社 半導体発光素子
JPH0945959A (ja) * 1995-07-28 1997-02-14 Toshiba Corp 発光素子
JP3966962B2 (ja) * 1997-10-16 2007-08-29 スタンレー電気株式会社 発光ダイオード及びその製造方法
JP2000174338A (ja) * 1998-12-02 2000-06-23 Matsushita Electric Ind Co Ltd 窒化ガリウム系化合物半導体発光素子
US6608328B2 (en) * 2001-02-05 2003-08-19 Uni Light Technology Inc. Semiconductor light emitting diode on a misoriented substrate
US7528417B2 (en) * 2003-02-10 2009-05-05 Showa Denko K.K. Light-emitting diode device and production method thereof
TWI231053B (en) * 2003-02-10 2005-04-11 Showa Denko Kk Semiconductor light emitting device and the manufacturing method thereof
JP4255710B2 (ja) * 2003-02-10 2009-04-15 昭和電工株式会社 半導体発光素子
JP2007042751A (ja) 2005-08-01 2007-02-15 Hitachi Cable Ltd 半導体発光素子
JP5018433B2 (ja) * 2007-11-30 2012-09-05 日立電線株式会社 半導体発光素子用エピタキシャルウェハ及び半導体発光素子
US8399948B2 (en) * 2009-12-04 2013-03-19 Lg Innotek Co., Ltd. Light emitting device, light emitting device package and lighting system
KR101028286B1 (ko) * 2009-12-28 2011-04-11 엘지이노텍 주식회사 반도체 발광소자 및 그 제조방법
KR101028251B1 (ko) * 2010-01-19 2011-04-11 엘지이노텍 주식회사 반도체 발광소자 및 그 제조방법
JP5590653B2 (ja) * 2010-02-16 2014-09-17 スタンレー電気株式会社 半導体発光装置及び半導体発光装置の製造方法
JP2011222950A (ja) * 2010-03-24 2011-11-04 Showa Denko Kk 発光ダイオード
JP5648475B2 (ja) 2010-12-28 2015-01-07 信越半導体株式会社 発光素子
KR20120103817A (ko) 2011-03-11 2012-09-20 서울옵토디바이스주식회사 발광 다이오드 제조 방법
JP2013042082A (ja) * 2011-08-19 2013-02-28 Hitachi Cable Ltd 半導体発光素子

Also Published As

Publication number Publication date
KR20140146839A (ko) 2014-12-29
EP2816615A1 (en) 2014-12-24
KR102101356B1 (ko) 2020-04-17
US9147811B2 (en) 2015-09-29
EP2816615B1 (en) 2019-09-11
JP2015005745A (ja) 2015-01-08
US20140367715A1 (en) 2014-12-18
CN104241474A (zh) 2014-12-24
CN104241474B (zh) 2017-11-14

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