JP6426377B2 - 発光素子及び照明システム - Google Patents
発光素子及び照明システム Download PDFInfo
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- JP6426377B2 JP6426377B2 JP2014123447A JP2014123447A JP6426377B2 JP 6426377 B2 JP6426377 B2 JP 6426377B2 JP 2014123447 A JP2014123447 A JP 2014123447A JP 2014123447 A JP2014123447 A JP 2014123447A JP 6426377 B2 JP6426377 B2 JP 6426377B2
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/025—Physical imperfections, e.g. particular concentration or distribution of impurities
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/10—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/14—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
- Non-Portable Lighting Devices Or Systems Thereof (AREA)
Description
(実施例)
Claims (7)
- 導電性材質の基板と、
前記基板の上部領域の一部が露出するように、前記基板の上部領域に配置される反射層と、
前記反射層の上に配置される第1導電型半導体層と、
前記第1導電型半導体層の上に配置されるAlGaInP系活性層と、
前記AlGaInP系活性層の上に配置される第2導電型クラッド層と、
前記第2導電型クラッド層の上に配置される第1濃度の第2導電型GaP層と、
前記第1濃度の第2導電型GaP層の上に配置される前記第1濃度より高い第2濃度の第2導電型GaP層と、
前記基板の露出した上部領域の一部に配置される第1電極と、
前記第2濃度の第2導電型GaP層の上に配置される第2電極と、
を含み、
前記反射層は、AlGaInP/AlInP層を1/4波長の厚さで複数蒸着した分布ブラッグ反射層(Distributed Bragg−Reflectors)鏡構造を含むことを特徴とする発光素子。 - 前記第1濃度の第2導電型GaP層の第1濃度は、前記第2濃度の第2導電型GaP層の第2濃度の10%〜30%の濃度であり、
前記第2濃度の第2導電型GaP層は、Mgドーピング濃度が1×10 17 〜9×10 17 (atoms/cm 3 )であり、
前記第1濃度の第2導電型GaP層でMgがトラップされてMgの拡散が抑制され、Mgフリー領域(Free Region)が形成され、
前記基板はGaAsを含み、
前記AlGaInP系活性層は、前記基板の上に格子定数が一致する組成条件で成長することを特徴とする請求項1に記載の発光素子。 - 前記第1濃度の第2導電型GaP層の厚さは、前記第2濃度の第2導電型GaP層の厚さより小さく、
前記第1濃度の第2導電型GaP層の厚さは、前記第2濃度の第2導電型GaP層の厚さの1%〜10%であり、
前記第2濃度の第2導電型GaP層の厚さは3μm〜4.5μmであることを特徴とする請求項1または2に記載の発光素子。 - 前記AlGaInP系活性層と前記第2導電型クラッド層との間にアンドープAlInP系層をさらに含み、
前記アンドープAlInP系層のバンドギャップエネルギーは、前記AlGaInP系活性層のバンドギャップエネルギーより大きく、
前記アンドープAlInP系層は、前記第2導電型クラッド層と接し、
前記アンドープAlInP系層は、前記第2導電型クラッド層と実質的に同じエネルギー準位を有し、
前記アンドープAlInP系層は、Mgの拡散を防止し、電子を遮断する機能をすることを特徴とする請求項1から3のいずれか一項に記載の発光素子。 - 前記アンドープAlInP系層は、前記第2導電型クラッド層より薄く、
前記アンドープAlInP系層は、前記第1濃度の第2導電型GaP層より薄いことを特徴とする請求項4に記載の発光素子。 - 前記反射層は、前記分布ブラッグ反射層(Distributed Bragg−Reflectors)を前記第1導電型半導体層、前記AlGaInP系活性層、前記第2導電型クラッド層と同じ格子構造層で形成したことを特徴とする請求項1から5のいずれか一項に記載の発光素子。
- 請求項1から6のいずれか一項に記載の発光素子を有する発光ユニットを含むことを特徴とする照明システム。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-2013-0069663 | 2013-06-18 | ||
KR1020130069663A KR102101356B1 (ko) | 2013-06-18 | 2013-06-18 | 발광소자 및 조명시스템 |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2015005745A JP2015005745A (ja) | 2015-01-08 |
JP2015005745A5 JP2015005745A5 (ja) | 2017-08-03 |
JP6426377B2 true JP6426377B2 (ja) | 2018-11-21 |
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Application Number | Title | Priority Date | Filing Date |
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JP2014123447A Active JP6426377B2 (ja) | 2013-06-18 | 2014-06-16 | 発光素子及び照明システム |
Country Status (5)
Country | Link |
---|---|
US (1) | US9147811B2 (ja) |
EP (1) | EP2816615B1 (ja) |
JP (1) | JP6426377B2 (ja) |
KR (1) | KR102101356B1 (ja) |
CN (1) | CN104241474B (ja) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10978612B2 (en) | 2017-07-31 | 2021-04-13 | Xiamen San'an Optoelectronics Co., Ltd | Semiconductor light emitting device |
CN107394019B (zh) * | 2017-07-31 | 2019-07-12 | 安徽三安光电有限公司 | 一种半导体发光元件及其制备方法 |
US11557693B2 (en) | 2017-07-31 | 2023-01-17 | Xiamen San'an Optoelectronics Co., Ltd. | Semiconductor light emitting device |
CN110379898B (zh) * | 2019-05-22 | 2020-11-17 | 华灿光电(苏州)有限公司 | 发光二极管外延片及其生长方法 |
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JP3164478B2 (ja) * | 1994-08-31 | 2001-05-08 | 京セラ株式会社 | 半導体装置およびその製造方法 |
JP3122324B2 (ja) * | 1995-02-20 | 2001-01-09 | 三菱電線工業株式会社 | 半導体発光素子 |
JPH0945959A (ja) * | 1995-07-28 | 1997-02-14 | Toshiba Corp | 発光素子 |
JP3966962B2 (ja) * | 1997-10-16 | 2007-08-29 | スタンレー電気株式会社 | 発光ダイオード及びその製造方法 |
JP2000174338A (ja) * | 1998-12-02 | 2000-06-23 | Matsushita Electric Ind Co Ltd | 窒化ガリウム系化合物半導体発光素子 |
US6608328B2 (en) * | 2001-02-05 | 2003-08-19 | Uni Light Technology Inc. | Semiconductor light emitting diode on a misoriented substrate |
TWI231053B (en) * | 2003-02-10 | 2005-04-11 | Showa Denko Kk | Semiconductor light emitting device and the manufacturing method thereof |
US7528417B2 (en) * | 2003-02-10 | 2009-05-05 | Showa Denko K.K. | Light-emitting diode device and production method thereof |
JP4255710B2 (ja) * | 2003-02-10 | 2009-04-15 | 昭和電工株式会社 | 半導体発光素子 |
JP2007042751A (ja) * | 2005-08-01 | 2007-02-15 | Hitachi Cable Ltd | 半導体発光素子 |
JP5018433B2 (ja) | 2007-11-30 | 2012-09-05 | 日立電線株式会社 | 半導体発光素子用エピタキシャルウェハ及び半導体発光素子 |
US8399948B2 (en) * | 2009-12-04 | 2013-03-19 | Lg Innotek Co., Ltd. | Light emitting device, light emitting device package and lighting system |
KR101028286B1 (ko) * | 2009-12-28 | 2011-04-11 | 엘지이노텍 주식회사 | 반도체 발광소자 및 그 제조방법 |
KR101028251B1 (ko) * | 2010-01-19 | 2011-04-11 | 엘지이노텍 주식회사 | 반도체 발광소자 및 그 제조방법 |
JP5590653B2 (ja) * | 2010-02-16 | 2014-09-17 | スタンレー電気株式会社 | 半導体発光装置及び半導体発光装置の製造方法 |
JP2011222950A (ja) * | 2010-03-24 | 2011-11-04 | Showa Denko Kk | 発光ダイオード |
JP5648475B2 (ja) * | 2010-12-28 | 2015-01-07 | 信越半導体株式会社 | 発光素子 |
KR20120103817A (ko) | 2011-03-11 | 2012-09-20 | 서울옵토디바이스주식회사 | 발광 다이오드 제조 방법 |
JP2013042082A (ja) * | 2011-08-19 | 2013-02-28 | Hitachi Cable Ltd | 半導体発光素子 |
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2013
- 2013-06-18 KR KR1020130069663A patent/KR102101356B1/ko active IP Right Grant
-
2014
- 2014-06-16 JP JP2014123447A patent/JP6426377B2/ja active Active
- 2014-06-17 EP EP14172841.0A patent/EP2816615B1/en active Active
- 2014-06-17 CN CN201410270175.4A patent/CN104241474B/zh active Active
- 2014-06-17 US US14/307,038 patent/US9147811B2/en active Active
Also Published As
Publication number | Publication date |
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CN104241474B (zh) | 2017-11-14 |
KR20140146839A (ko) | 2014-12-29 |
EP2816615A1 (en) | 2014-12-24 |
US9147811B2 (en) | 2015-09-29 |
KR102101356B1 (ko) | 2020-04-17 |
EP2816615B1 (en) | 2019-09-11 |
CN104241474A (zh) | 2014-12-24 |
US20140367715A1 (en) | 2014-12-18 |
JP2015005745A (ja) | 2015-01-08 |
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