JP2015511407A5 - - Google Patents

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Publication number
JP2015511407A5
JP2015511407A5 JP2014558672A JP2014558672A JP2015511407A5 JP 2015511407 A5 JP2015511407 A5 JP 2015511407A5 JP 2014558672 A JP2014558672 A JP 2014558672A JP 2014558672 A JP2014558672 A JP 2014558672A JP 2015511407 A5 JP2015511407 A5 JP 2015511407A5
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JP
Japan
Prior art keywords
layer
emitting diode
thickness
light emitting
type contact
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JP2014558672A
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English (en)
Japanese (ja)
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JP6062966B2 (ja
JP2015511407A (ja
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Priority claimed from KR1020120019011A external-priority patent/KR101843513B1/ko
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Publication of JP2015511407A publication Critical patent/JP2015511407A/ja
Publication of JP2015511407A5 publication Critical patent/JP2015511407A5/ja
Application granted granted Critical
Publication of JP6062966B2 publication Critical patent/JP6062966B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2014558672A 2012-02-24 2013-02-18 窒化ガリウム系発光ダイオード Expired - Fee Related JP6062966B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
KR1020120019011A KR101843513B1 (ko) 2012-02-24 2012-02-24 질화갈륨계 발광 다이오드
KR10-2012-0019011 2012-02-24
PCT/KR2013/001258 WO2013125822A1 (en) 2012-02-24 2013-02-18 Gallium nitride-based light emitting diode

Publications (3)

Publication Number Publication Date
JP2015511407A JP2015511407A (ja) 2015-04-16
JP2015511407A5 true JP2015511407A5 (enExample) 2015-05-28
JP6062966B2 JP6062966B2 (ja) 2017-01-18

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Family Applications (1)

Application Number Title Priority Date Filing Date
JP2014558672A Expired - Fee Related JP6062966B2 (ja) 2012-02-24 2013-02-18 窒化ガリウム系発光ダイオード

Country Status (4)

Country Link
US (1) US9853182B2 (enExample)
JP (1) JP6062966B2 (enExample)
KR (1) KR101843513B1 (enExample)
WO (1) WO2013125822A1 (enExample)

Families Citing this family (10)

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Publication number Priority date Publication date Assignee Title
US9590140B2 (en) * 2014-07-03 2017-03-07 Sergey Suchalkin Bi-directional dual-color light emitting device and systems for use thereof
JP6430317B2 (ja) * 2014-08-25 2018-11-28 株式会社東芝 半導体発光素子及びその製造方法
CN104701428B (zh) * 2015-03-16 2017-07-28 映瑞光电科技(上海)有限公司 一种降低led二极管电压的外延方法
CN104701432A (zh) * 2015-03-20 2015-06-10 映瑞光电科技(上海)有限公司 GaN 基LED 外延结构及其制备方法
US20170207365A1 (en) * 2016-01-20 2017-07-20 Google Inc. Layered active region light emitting diode
CN105789394A (zh) * 2016-04-20 2016-07-20 映瑞光电科技(上海)有限公司 一种GaN基LED外延结构及其制备方法
DE102016112294A1 (de) 2016-07-05 2018-01-11 Osram Opto Semiconductors Gmbh Halbleiterschichtenfolge
KR102540198B1 (ko) * 2020-05-22 2023-06-02 충칭 콘카 포토일렉트릭 테크놀로지 리서치 인스티튜트 컴퍼니 리미티드 초격자층, led 에피택셜 구조, 디스플레이 장치 및 이의 제조 방법
JP7260807B2 (ja) * 2020-12-24 2023-04-19 日亜化学工業株式会社 窒化物半導体発光素子およびその製造方法
CN114156380B (zh) * 2021-11-30 2023-09-22 华灿光电（浙江）有限公司 提高内量子效率的发光二极管外延片及其制备方法

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JP2002190635A (ja) * 2000-12-20 2002-07-05 Sharp Corp 半導体レーザ素子およびその製造方法
JP3789781B2 (ja) * 2001-07-06 2006-06-28 三洋電機株式会社 半導体素子および半導体層の形成方法
JP4110222B2 (ja) * 2003-08-20 2008-07-02 住友電気工業株式会社 発光ダイオード
KR100661708B1 (ko) * 2004-10-19 2006-12-26 엘지이노텍 주식회사 질화물 반도체 발광소자 및 그 제조방법
JP2006135001A (ja) * 2004-11-04 2006-05-25 Sony Corp 半導体素子およびその製造方法
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JP2013207046A (ja) * 2012-03-28 2013-10-07 Toyoda Gosei Co Ltd Ｉｉｉ族窒化物系化合物半導体発光素子およびその製造方法

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