JP2007066981A - 半導体装置 - Google Patents
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Abstract
【解決手段】 レーザダイオードは、n型GaN基板1上に形成されるn型GaNバッファ層2と、その上に形成されるn型クラッド層3と、その上に形成されるn型ガイド層4と、その上に形成される活性層5と、その上に形成されるp型第1ガイド層6と、その上に形成されるオーバーフロー防止層7と、その上に形成される不純物拡散防止層8と、その上に形成されるp型GaN第2ガイド層9と、その上に形成されるp型クラッド層10とを備えている。活性層5に近接してInyGa1-yNからなる不純物拡散防止層8を設けるため、p型クラッド層10やp型第2ガイド層9などの内部に存在するp型不純物を不純物拡散防止層8に蓄積でき、p型不純物が活性層5に拡散しなくなる。
【選択図】 図1
Description
中村修二他、「InGaN-Based Multi-Quantum-Well-Structure Laser Diodes」、Japanese Journal of Applied Physics、1996年1月15日、第35巻、第1B号、pp.L74−L76. M. Hansen他、「Higher efficiency InGaN laser diodes with an improved quantum well capping configuration」、Applied Physics Letters、2002年11月25日、第81巻、第22号、pp.4275−4277.
図1は本発明の第1の実施形態に係る半導体装置の断面図であり、半導体発光素子、より具体的にはレーザダイオードの断面構造を示している。図1のレーザダイオードは、n型GaN基板1上に形成されるn型GaNバッファ層2と、その上に形成されるn型クラッド層3と、その上に形成されるn型ガイド層4と、その上に形成される活性層5と、その上に形成されるp型第1ガイド層6と、その上に形成されるGaxAl1-xN(0<x≦1)層(オーバーフロー防止層)7と、その上に形成されるInyGa1-yN(0<y≦1)層(不純物拡散防止層)8と、その上に形成されるp型GaN第2ガイド層9と、その上に形成されるp型クラッド層10と、その上に形成されるp型コンタクト層11とを備えている。なお、オーバーフロー防止層はより一般的にIn1−x−yGaxAlyN(0≦x<1,0<y≦1)に拡張することもできる。
第2の実施形態は、レーザダイオードの構造が第1の実施形態とは異なるものである。
2 n型GaNバッファ層
3 n型クラッド層
4 n型ガイド層
5 活性層
6 p型第1ガイド層
7 GaxAl1-xN(0<x≦1)層(オーバーフロー防止層)
8 InuGa1−u−vAlvN(0<u≦1,0<v≦1)層(不純物拡散防止層)
9 p型GaN第2ガイド層
10 p型クラッド層
11 p型コンタクト層
12 絶縁層
13 p側電極
14 n側電極
21 p型GaNガイド層
Claims (11)
- 活性層と、
第1導電型の第1半導体層と、
前記活性層と前記第1半導体層との間に配置され第1導電型の不純物がドープされた電子または正孔のオーバーフローを防止するオーバーフロー防止層と、
前記活性層と前記オーバーフロー防止層との間、および前記オーバーフロー防止層と前記第1半導体層との間の少なくとも一方に配置される第1導電型の第2半導体層と、
前記第1半導体層と前記活性層との間に配置され、前記オーバーフロー防止層、前記第1半導体層、および第2半導体層よりも小さいバンドギャップを有し第1導電型の不純物の拡散を防止する不純物拡散防止層と、を備え、
前記活性層、オーバーフロー防止層、第1半導体層、第2半導体層、および不純物拡散防止層はいずれもGaN系化合物半導体からなることを特徴とする半導体装置。 - 活性層と、
第1導電型の第1半導体層と、
前記活性層と前記第1半導体層との間に配置され第1導電型の不純物がドープされた電子または正孔のオーバーフローを防止するオーバーフロー防止層と、
前記活性層と前記オーバーフロー防止層との間、および前記オーバーフロー防止層と前記第1半導体層との間のいずれか一方に配置される第1導電型の第2半導体層と、
前記オーバーフロー防止層と前記第2半導体層との間に配置され、前記オーバーフロー防止層、前記第1半導体層、および第2半導体層よりも小さいバンドギャップを有し第1導電型の不純物の拡散を防止する不純物拡散防止層と、を備え、
前記活性層、オーバーフロー防止層、第1半導体層、第2半導体層、および不純物拡散防止層はいずれもGaN系化合物半導体からなることを特徴とする半導体装置。 - 前記第2半導体層は、前記活性層と前記オーバーフロー防止層との間に配置され、
当該第2半導体層と前記オーバーフロー防止層との間に前記不純物拡散防止層が配置されることを特徴とする請求項2に記載の半導体発光素子。 - 前記不純物拡散防止層はInを含んでおり、
前記不純物拡散防止層におけるInの組成比は、前記オーバーフロー防止層、第1半導体層、および第2半導体層、におけるInの組成比よりも高いことを特徴とする請求項1乃至3のいずれかに記載の半導体装置。 - 活性層と、
第1導電型の第1半導体層と、
前記活性層と前記第1半導体層との間に配置され第1導電型の不純物がドープされた電子または正孔のオーバーフローを防止するオーバーフロー防止層と、
前記オーバーフロー防止層と前記第1半導体層との間に配置される第1導電型の第2半導体層と、
前記オーバーフロー防止層と前記活性層との間に配置される第1導電型の第3半導体層と、
前記オーバーフロー防止層と前記第2半導体層との間、および前記オーバーフロー防止層と前記第3半導体層との間の少なくとも一方に配置され、前記オーバーフロー防止層、前記第1半導体層、前記第2半導体層、および第3半導体層よりも小さいバンドギャップを有し第1導電型の不純物の拡散を防止する不純物拡散防止層と、を備え、
前記活性層、オーバーフロー防止層、第1半導体層、第2半導体層、第3半導体層、および不純物拡散防止層はいずれもGaN系化合物半導体からなることを特徴とする半導体装置。 - 前記第3半導体層と前記オーバーフロー防止層との間に前記不純物拡散防止層が配置されることを特徴とする請求項5に記載の半導体発光素子。
- 前記不純物拡散防止層はInを含んでおり、
前記不純物拡散防止層におけるInの組成比は、前記オーバーフロー防止層、第1半導体層、第2半導体層、および第3半導体層におけるInの組成比よりも高いことを特徴とする請求項5または6に記載の半導体装置。 - 前記活性層は所定波長の光を発光し、第1導電型はp型であり、前記第1半導体層、前記第2半導体層はそれぞれp型クラッド層、p型ガイド層であり、前記オーバーフロー防止層は電子のオーバーフローを防止することを特徴とする請求項1乃至4のいずれかに記載の半導体装置。
- 前記活性層は所定波長の光を発光し、第1導電型はp型であり、前記第1半導体層はp型クラッド層であり、前記第2半導体層および第3半導体層はそれぞれp型ガイド層であり、前記オーバーフロー防止層は電子のオーバーフローを防止することを特徴とする請求項5乃至7のいずれかに記載の半導体装置。
- 前記活性層のp型ガイド層とは反対側に配置されGaNまたはInx1Ga1-x1N(0<x1<1)からなるn型ガイド層を備え、
前記活性層は、Inx2Ga1−x2N(0<x2≦1)の量子井戸と、Inx3Ga1−x3N(0<x3<1、x2>x3)のバリア層と、を有する単一または多重量子井戸構造であり、
前記p型ガイド層は、Inx4Ga1−x4N(0≦x4<1、x3>x4)を含むことを特徴とする請求項8または9に記載の半導体装置。 - 前記オーバーフロー防止層は、Ga1−yAlyN(0<y≦1)からなることを特徴とする請求項1乃至10のいずれかに記載の半導体装置。
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JP2005247838A JP2007066981A (ja) | 2005-08-29 | 2005-08-29 | 半導体装置 |
US11/511,337 US7397069B2 (en) | 2005-08-29 | 2006-08-29 | Semiconductor device |
KR1020060082170A KR100789028B1 (ko) | 2005-08-29 | 2006-08-29 | 반도체 장치 |
CNB2006101265857A CN100499190C (zh) | 2005-08-29 | 2006-08-29 | 半导体器件 |
US12/036,409 US7683390B2 (en) | 2005-08-29 | 2008-02-25 | Semiconductor device |
US12/652,827 US20100102296A1 (en) | 2005-08-29 | 2010-01-06 | Semiconductor device |
US13/398,170 US8835950B2 (en) | 2005-08-29 | 2012-02-16 | Semiconductor device |
US13/398,239 US8466477B2 (en) | 2005-08-29 | 2012-02-16 | Semiconductor device |
US13/837,834 US8741686B2 (en) | 2005-08-29 | 2013-03-15 | Semiconductor device |
US14/220,584 US9035336B2 (en) | 2005-08-29 | 2014-03-20 | Semiconductor device |
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Cited By (6)
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---|---|---|---|---|
JP2010187034A (ja) * | 2010-06-01 | 2010-08-26 | Toshiba Corp | 半導体装置 |
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US8466477B2 (en) | 2005-08-29 | 2013-06-18 | Kabushiki Kaisha Toshiba | Semiconductor device |
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Also Published As
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US20100102296A1 (en) | 2010-04-29 |
US7397069B2 (en) | 2008-07-08 |
US8741686B2 (en) | 2014-06-03 |
US20120138896A1 (en) | 2012-06-07 |
KR20070026091A (ko) | 2007-03-08 |
US8835950B2 (en) | 2014-09-16 |
CN100499190C (zh) | 2009-06-10 |
US7683390B2 (en) | 2010-03-23 |
US20120138895A1 (en) | 2012-06-07 |
US20080151957A1 (en) | 2008-06-26 |
US20070096142A1 (en) | 2007-05-03 |
US20130196462A1 (en) | 2013-08-01 |
CN1925181A (zh) | 2007-03-07 |
US20140204970A1 (en) | 2014-07-24 |
US9035336B2 (en) | 2015-05-19 |
KR100789028B1 (ko) | 2007-12-26 |
US8466477B2 (en) | 2013-06-18 |
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