JP2008109092A - 半導体発光素子 - Google Patents
半導体発光素子 Download PDFInfo
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- JP2008109092A JP2008109092A JP2007217511A JP2007217511A JP2008109092A JP 2008109092 A JP2008109092 A JP 2008109092A JP 2007217511 A JP2007217511 A JP 2007217511A JP 2007217511 A JP2007217511 A JP 2007217511A JP 2008109092 A JP2008109092 A JP 2008109092A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 107
- 238000009792 diffusion process Methods 0.000 claims abstract description 78
- 238000005253 cladding Methods 0.000 claims abstract description 43
- 239000011777 magnesium Substances 0.000 claims abstract description 33
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims abstract description 30
- 229910052749 magnesium Inorganic materials 0.000 claims abstract description 30
- 239000012535 impurity Substances 0.000 claims abstract description 23
- 230000002265 prevention Effects 0.000 claims description 59
- 229910052739 hydrogen Inorganic materials 0.000 claims description 36
- 239000001257 hydrogen Substances 0.000 claims description 36
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 30
- 230000004888 barrier function Effects 0.000 claims description 26
- 150000001875 compounds Chemical class 0.000 claims description 17
- 150000004767 nitrides Chemical class 0.000 claims description 15
- -1 nitride compound Chemical class 0.000 claims description 11
- 230000006866 deterioration Effects 0.000 abstract description 18
- 230000000903 blocking effect Effects 0.000 abstract description 4
- 239000010410 layer Substances 0.000 description 285
- 239000007789 gas Substances 0.000 description 30
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 28
- 229910002601 GaN Inorganic materials 0.000 description 26
- 238000000034 method Methods 0.000 description 21
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 16
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 14
- 239000000758 substrate Substances 0.000 description 12
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 12
- 229910002704 AlGaN Inorganic materials 0.000 description 11
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 10
- 229910052710 silicon Inorganic materials 0.000 description 10
- 239000010703 silicon Substances 0.000 description 10
- IBEFSUTVZWZJEL-UHFFFAOYSA-N trimethylindium Chemical compound C[In](C)C IBEFSUTVZWZJEL-UHFFFAOYSA-N 0.000 description 8
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 7
- 229910021529 ammonia Inorganic materials 0.000 description 7
- 229910052733 gallium Inorganic materials 0.000 description 7
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 6
- 229910052738 indium Inorganic materials 0.000 description 6
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 6
- 230000003287 optical effect Effects 0.000 description 6
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 6
- 150000002431 hydrogen Chemical class 0.000 description 5
- 239000002994 raw material Substances 0.000 description 5
- 239000011669 selenium Substances 0.000 description 5
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 239000002019 doping agent Substances 0.000 description 4
- 239000010931 gold Substances 0.000 description 4
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 4
- MHYQBXJRURFKIN-UHFFFAOYSA-N C1(C=CC=C1)[Mg] Chemical compound C1(C=CC=C1)[Mg] MHYQBXJRURFKIN-UHFFFAOYSA-N 0.000 description 3
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 3
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 238000001020 plasma etching Methods 0.000 description 3
- 229910052711 selenium Inorganic materials 0.000 description 3
- 229910052717 sulfur Inorganic materials 0.000 description 3
- 239000011593 sulfur Substances 0.000 description 3
- 238000001771 vacuum deposition Methods 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 238000003776 cleavage reaction Methods 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 238000002248 hydride vapour-phase epitaxy Methods 0.000 description 2
- 238000001459 lithography Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 238000001451 molecular beam epitaxy Methods 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 230000007017 scission Effects 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 235000005811 Viola adunca Nutrition 0.000 description 1
- 240000009038 Viola odorata Species 0.000 description 1
- 235000013487 Viola odorata Nutrition 0.000 description 1
- 235000002254 Viola papilionacea Nutrition 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- ORQBXQOJMQIAOY-UHFFFAOYSA-N nobelium Chemical compound [No] ORQBXQOJMQIAOY-UHFFFAOYSA-N 0.000 description 1
- 238000005036 potential barrier Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
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- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
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- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
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- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/2201—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure in a specific crystallographic orientation
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- H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/34333—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer based on Ga(In)N or Ga(In)P, e.g. blue laser
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Abstract
【解決手段】半導体レーザ素子101は、n型クラッド層104とp型クラッド層109の間に挟まれた活性層106を有する。p型クラッド層109は、不純物としてマグネシウムを含み、活性層106とp型クラッド層109との間には、InxAlyGa1−x−yN(x≧0、y≧0、x+y<1)で表されるn型拡散防止層107が設けられている。n型拡散防止層107におけるn型不純物のドーピング濃度は、5×1017cm−3以上で5×1019cm−3以下とすることが好ましい。
【選択図】図1
Description
前記p型クラッド層は、不純物としてマグネシウムを含み、
前記活性層と前記p型クラッド層との間には
InxAlyGa1−x−yN (但し、x≧0、y≧0、x+y<1)
で表される窒化物系化合物半導体よりなるn型拡散防止層が設けられていることを特徴とするものである。
図1は、本実施の形態におけるIII−V族窒化物系化合物半導体レーザ素子の断面図である。
実施の形態1では、n型拡散防止層として、単一の層からなるn型AlGaN層を用いた。これに対して、本実施の形態では、式(2)に示す化合物から形成されて複数の層からなるn型拡散防止層を用いる。
102,202 基板
103,203 n型GaN層
104,204 n型クラッド層
105,205 n型ガイド層
106,206 活性層
107,207 n型拡散防止層
108,208 p型電子障壁層
109,209 p型クラッド層
110,210 p型コンタクト層
111,211 リッジ
112,212 絶縁膜
113,213 開口部
114,214 p側電極
115,215 n側電極
116 アンドープのガイド層
117 アンドープのGaN層
Claims (8)
- 窒化物系化合物半導体よりなるn型クラッド層と、該n型クラッド層の上に形成されて窒化物系化合物半導体よりなる活性層と、該活性層の上に形成されて窒化物系化合物半導体よりなるp型クラッド層とを備えた半導体発光素子において、
前記p型クラッド層は、不純物としてマグネシウムを含み、
前記活性層と前記p型クラッド層との間には
InxAlyGa1−x−yN (但し、x≧0、y≧0、x+y<1)
で表される窒化物系化合物半導体よりなるn型拡散防止層が設けられていることを特徴とする半導体発光素子。 - 前記n型拡散防止層は1つの層のみからなっていて、該層におけるn型不純物のドーピング濃度は、5×1017cm−3以上で5×1019cm−3以下であることを特徴とする請求項1に記載の半導体発光素子。
- 前記n型拡散防止層は複数の層からなっていて、この内の少なくとも1つの層にn型不純物が含まれていることを特徴とする請求項1に記載の半導体発光素子。
- 前記n型拡散防止層の膜厚は、5nm以上で200nm以下であることを特徴とする請求項1〜3のいずれか1項に記載の半導体発光素子。
- 前記n型拡散防止層と前記p型クラッド層との間には、前記n型拡散防止層に接するようにして、窒化物系化合物半導体よりなるp型電子障壁層が設けられていることを特徴とする請求項1〜4のいずれか1項に記載の半導体発光素子。
- 前記n型拡散防止層と前記p型電子障壁層との間には、アンドープのGaN層またはアンドープのInGaN層が設けられていることを特徴とする請求項5に記載の半導体発光素子。
- 前記活性層と前記n型拡散防止層との間には、窒化物系化合物半導体よりなるアンドープのガイド層が設けられていることを特徴とする請求項1〜6のいずれか1項に記載の半導体発光素子。
- 前記p型クラッド層には、水素が含まれることを特徴とする請求項1〜7のいずれか1項に記載の半導体発光素子。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007217511A JP4246242B2 (ja) | 2006-09-27 | 2007-08-23 | 半導体発光素子 |
TW096133228A TW200822480A (en) | 2006-09-27 | 2007-09-06 | Semiconductor light-emitting devices |
US11/854,647 US20080073660A1 (en) | 2006-09-27 | 2007-09-13 | Semiconductor light-emitting devices |
US12/835,772 US20100289056A1 (en) | 2006-09-27 | 2010-07-14 | Semiconductor light-emitting devices |
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JP2006262845 | 2006-09-27 | ||
JP2007217511A JP4246242B2 (ja) | 2006-09-27 | 2007-08-23 | 半導体発光素子 |
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JP2008295382A Division JP2009038408A (ja) | 2006-09-27 | 2008-11-19 | 半導体発光素子 |
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JP2008109092A true JP2008109092A (ja) | 2008-05-08 |
JP4246242B2 JP4246242B2 (ja) | 2009-04-02 |
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JP2007217511A Expired - Fee Related JP4246242B2 (ja) | 2006-09-27 | 2007-08-23 | 半導体発光素子 |
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US (2) | US20080073660A1 (ja) |
JP (1) | JP4246242B2 (ja) |
TW (1) | TW200822480A (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2014179546A (ja) * | 2013-03-15 | 2014-09-25 | Renesas Electronics Corp | 半導体装置 |
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US9837518B2 (en) | 2013-03-15 | 2017-12-05 | Renesas Electronics Corporation | Semiconductor device |
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TW200822480A (en) | 2008-05-16 |
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US20080073660A1 (en) | 2008-03-27 |
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