JP5044692B2 - 窒化物半導体発光素子 - Google Patents
窒化物半導体発光素子 Download PDFInfo
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- JP5044692B2 JP5044692B2 JP2010504971A JP2010504971A JP5044692B2 JP 5044692 B2 JP5044692 B2 JP 5044692B2 JP 2010504971 A JP2010504971 A JP 2010504971A JP 2010504971 A JP2010504971 A JP 2010504971A JP 5044692 B2 JP5044692 B2 JP 5044692B2
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- 239000004065 semiconductor Substances 0.000 title claims description 23
- 150000004767 nitrides Chemical class 0.000 title claims description 21
- 230000004888 barrier function Effects 0.000 claims description 39
- 239000012535 impurity Substances 0.000 claims description 8
- 239000010410 layer Substances 0.000 description 191
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 27
- 229910002601 GaN Inorganic materials 0.000 description 26
- 238000005253 cladding Methods 0.000 description 7
- 238000002347 injection Methods 0.000 description 6
- 239000007924 injection Substances 0.000 description 6
- 239000000203 mixture Substances 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 239000010931 gold Substances 0.000 description 5
- 239000000758 substrate Substances 0.000 description 4
- 239000002131 composite material Substances 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 229910052738 indium Inorganic materials 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 230000002265 prevention Effects 0.000 description 3
- 239000002356 single layer Substances 0.000 description 3
- 230000005684 electric field Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 235000005811 Viola adunca Nutrition 0.000 description 1
- 240000009038 Viola odorata Species 0.000 description 1
- 235000013487 Viola odorata Nutrition 0.000 description 1
- 235000002254 Viola papilionacea Nutrition 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- FHUGMWWUMCDXBC-UHFFFAOYSA-N gold platinum titanium Chemical compound [Ti][Pt][Au] FHUGMWWUMCDXBC-UHFFFAOYSA-N 0.000 description 1
- 125000005842 heteroatom Chemical group 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 238000005424 photoluminescence Methods 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
- H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
- Semiconductor Lasers (AREA)
Description
Claims (2)
- p型及びn型の一対のGaN層と、これらGaN層間に挟まれた単一量子井戸構造又は多重量子井戸構造の活性層を具備する窒化物系半導体発光ダイオードにおいて、
前記活性層は、量子井戸層と、この量子井戸層を間に挟む、量子井戸層よりもバンドギャップが大きい一対のバリア層とを含み、
前記一対のバリア層のそれぞれは、前記量子井戸層側から順に、Iny1Ga1−y1Nから構成される第1のサブバリア層、Iny2Ga1−y2Nから構成される第2のサブバリア層、及びIny3Ga1−y3Nから構成される第3のサブバリア層のみからなる3層構造を有し、0≦y1,y3<y2<1、及びy1=y3の関係を満たし、前記バリア層の膜厚をbnmとした場合、前記第1及び第3のサブバリア層の膜厚はそれぞれ0.25nm以上、(b/2)nm未満であり、かつそれぞれ第2のサブバリア層の膜厚よりも小さい窒化物系半導体発光ダイオード。 - 前記バリア層には、n型不純物がドープされている請求項1に記載の窒化物半導体発光ダイオード。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/JP2009/064402 WO2011021264A1 (ja) | 2009-08-17 | 2009-08-17 | 窒化物半導体発光素子 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2011252895A Division JP5380516B2 (ja) | 2011-11-18 | 2011-11-18 | 窒化物半導体発光素子 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP5044692B2 true JP5044692B2 (ja) | 2012-10-10 |
JPWO2011021264A1 JPWO2011021264A1 (ja) | 2013-01-17 |
Family
ID=43588057
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2010504971A Expired - Fee Related JP5044692B2 (ja) | 2009-08-17 | 2009-08-17 | 窒化物半導体発光素子 |
Country Status (3)
Country | Link |
---|---|
US (1) | US20110037049A1 (ja) |
JP (1) | JP5044692B2 (ja) |
WO (1) | WO2011021264A1 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9865770B2 (en) | 2013-07-17 | 2018-01-09 | Kabushiki Kaisha Toshiba | Semiconductor light emitting element and method for manufacturing the same |
Families Citing this family (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101008285B1 (ko) * | 2005-10-28 | 2011-01-13 | 주식회사 에피밸리 | 3족 질화물 반도체 발광소자 |
US9583678B2 (en) | 2009-09-18 | 2017-02-28 | Soraa, Inc. | High-performance LED fabrication |
KR20120138080A (ko) * | 2011-06-14 | 2012-12-24 | 엘지이노텍 주식회사 | 발광 소자 |
JP5868650B2 (ja) * | 2011-10-11 | 2016-02-24 | 株式会社東芝 | 半導体発光素子 |
CN102544281A (zh) | 2012-01-20 | 2012-07-04 | 厦门市三安光电科技有限公司 | 具有多层势垒结构的氮化镓基发光二极管 |
CN102623596A (zh) * | 2012-04-25 | 2012-08-01 | 华灿光电股份有限公司 | 一种具有倾斜量子阱结构的氮化镓半导体发光二极管 |
JP5383876B1 (ja) * | 2012-08-01 | 2014-01-08 | 株式会社東芝 | 半導体発光素子及びその製造方法 |
KR20140019635A (ko) * | 2012-08-06 | 2014-02-17 | 엘지이노텍 주식회사 | 발광 소자 및 발광 소자 패키지 |
KR101953716B1 (ko) * | 2012-08-23 | 2019-03-05 | 엘지이노텍 주식회사 | 발광소자, 발광 소자 패키지 및 조명 시스템 |
US9978904B2 (en) | 2012-10-16 | 2018-05-22 | Soraa, Inc. | Indium gallium nitride light emitting devices |
CN102903808A (zh) * | 2012-10-31 | 2013-01-30 | 合肥彩虹蓝光科技有限公司 | 一种提高GaN基LED发光效率的浅量子阱生长方法 |
CN102931305B (zh) * | 2012-11-15 | 2015-06-17 | 合肥彩虹蓝光科技有限公司 | 一种led芯片及其制备方法 |
CN103296165B (zh) * | 2013-06-19 | 2016-08-10 | 中国科学院半导体研究所 | 一种可调控能带的led量子阱结构 |
KR20150025264A (ko) | 2013-08-28 | 2015-03-10 | 삼성전자주식회사 | 정공주입층을 구비하는 반도체 발광 소자 및 그 제조 방법 |
US9419189B1 (en) | 2013-11-04 | 2016-08-16 | Soraa, Inc. | Small LED source with high brightness and high efficiency |
JP6225945B2 (ja) | 2015-05-26 | 2017-11-08 | 日亜化学工業株式会社 | 半導体レーザ素子 |
US9640716B2 (en) * | 2015-07-28 | 2017-05-02 | Genesis Photonics Inc. | Multiple quantum well structure and method for manufacturing the same |
CN105304770A (zh) * | 2015-09-21 | 2016-02-03 | 东莞市中镓半导体科技有限公司 | 一种具有Al组分及厚度阶梯式渐变的量子垒结构的近紫外LED制备方法 |
JP6218791B2 (ja) * | 2015-10-28 | 2017-10-25 | シャープ株式会社 | 窒化物半導体レーザ素子 |
Citations (8)
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JPH1174621A (ja) * | 1997-08-29 | 1999-03-16 | Toshiba Corp | 窒化物系半導体発光素子 |
JP2004031770A (ja) * | 2002-06-27 | 2004-01-29 | Sharp Corp | 窒化物半導体発光素子 |
JP2004087763A (ja) * | 2002-08-27 | 2004-03-18 | Sony Corp | 窒化物系半導体発光素子 |
JP2005012216A (ja) * | 2003-06-18 | 2005-01-13 | Lumileds Lighting Us Llc | Iii族窒化物発光デバイスのためのヘテロ構造 |
WO2005020396A1 (ja) * | 2003-08-26 | 2005-03-03 | Sony Corporation | GaN系III−V族化合物半導体発光素子及びその製造方法 |
JP2008252096A (ja) * | 2007-03-29 | 2008-10-16 | Seoul Opto Devices Co Ltd | 超格子構造のウェル層及び/又は超格子構造のバリア層を有する発光ダイオード |
JP2008311658A (ja) * | 2007-06-12 | 2008-12-25 | Seoul Opto Devices Co Ltd | 多重量子ウェル構造の活性領域を有する発光ダイオード |
JP2009277724A (ja) * | 2008-05-12 | 2009-11-26 | Sumitomo Electric Ind Ltd | 窒化物半導体レーザ |
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US6900465B2 (en) * | 1994-12-02 | 2005-05-31 | Nichia Corporation | Nitride semiconductor light-emitting device |
JP4342134B2 (ja) * | 2000-12-28 | 2009-10-14 | 日亜化学工業株式会社 | 窒化物半導体レーザ素子 |
TW488088B (en) * | 2001-01-19 | 2002-05-21 | South Epitaxy Corp | Light emitting diode structure |
JP3679720B2 (ja) * | 2001-02-27 | 2005-08-03 | 三洋電機株式会社 | 窒化物系半導体素子および窒化物系半導体の形成方法 |
JP2004087908A (ja) * | 2002-08-28 | 2004-03-18 | Sharp Corp | 窒化物半導体発光素子、その製造方法、それを搭載した光学装置 |
JP2007066981A (ja) * | 2005-08-29 | 2007-03-15 | Toshiba Corp | 半導体装置 |
-
2009
- 2009-08-17 JP JP2010504971A patent/JP5044692B2/ja not_active Expired - Fee Related
- 2009-08-17 WO PCT/JP2009/064402 patent/WO2011021264A1/ja active Application Filing
-
2010
- 2010-03-04 US US12/717,653 patent/US20110037049A1/en not_active Abandoned
Patent Citations (8)
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JPH1174621A (ja) * | 1997-08-29 | 1999-03-16 | Toshiba Corp | 窒化物系半導体発光素子 |
JP2004031770A (ja) * | 2002-06-27 | 2004-01-29 | Sharp Corp | 窒化物半導体発光素子 |
JP2004087763A (ja) * | 2002-08-27 | 2004-03-18 | Sony Corp | 窒化物系半導体発光素子 |
JP2005012216A (ja) * | 2003-06-18 | 2005-01-13 | Lumileds Lighting Us Llc | Iii族窒化物発光デバイスのためのヘテロ構造 |
WO2005020396A1 (ja) * | 2003-08-26 | 2005-03-03 | Sony Corporation | GaN系III−V族化合物半導体発光素子及びその製造方法 |
JP2008252096A (ja) * | 2007-03-29 | 2008-10-16 | Seoul Opto Devices Co Ltd | 超格子構造のウェル層及び/又は超格子構造のバリア層を有する発光ダイオード |
JP2008311658A (ja) * | 2007-06-12 | 2008-12-25 | Seoul Opto Devices Co Ltd | 多重量子ウェル構造の活性領域を有する発光ダイオード |
JP2009277724A (ja) * | 2008-05-12 | 2009-11-26 | Sumitomo Electric Ind Ltd | 窒化物半導体レーザ |
Non-Patent Citations (2)
Title |
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JPN6012007796; Min-Ho KIM et al.: IEEE Journal of Selected Topics in Quantum Electronics Vol.15 No.4, 200907, p.1122-1127 * |
JPN7012000563; Tzer-En NEE et al.: Journal of Applied Physics Vol.102, 20070802, p.033101-1〜033101-7 * |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9865770B2 (en) | 2013-07-17 | 2018-01-09 | Kabushiki Kaisha Toshiba | Semiconductor light emitting element and method for manufacturing the same |
Also Published As
Publication number | Publication date |
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US20110037049A1 (en) | 2011-02-17 |
JPWO2011021264A1 (ja) | 2013-01-17 |
WO2011021264A1 (ja) | 2011-02-24 |
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